DE102019207990B4 - Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks - Google Patents

Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks Download PDF

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Publication number
DE102019207990B4
DE102019207990B4 DE102019207990.3A DE102019207990A DE102019207990B4 DE 102019207990 B4 DE102019207990 B4 DE 102019207990B4 DE 102019207990 A DE102019207990 A DE 102019207990A DE 102019207990 B4 DE102019207990 B4 DE 102019207990B4
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Germany
Prior art keywords
workpiece
liquid medium
openings
modified
wafer
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Active
Application number
DE102019207990.3A
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German (de)
English (en)
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DE102019207990A1 (de
Inventor
Hitoshi Hoshino
Tzanimir Arguirov
Yasuyoshi Yubira
Karl Heinz Priewasser
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Disco Corp
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Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to DE102019207990.3A priority Critical patent/DE102019207990B4/de
Priority to TW109115107A priority patent/TWI781398B/zh
Priority to US16/885,526 priority patent/US12224207B2/en
Priority to KR1020200064510A priority patent/KR102338795B1/ko
Priority to CN202010469579.1A priority patent/CN112017995B/zh
Priority to CN202410421604.7A priority patent/CN118471849A/zh
Priority to JP2020094559A priority patent/JP7278239B2/ja
Publication of DE102019207990A1 publication Critical patent/DE102019207990A1/de
Priority to JP2022080454A priority patent/JP7549622B2/ja
Application granted granted Critical
Publication of DE102019207990B4 publication Critical patent/DE102019207990B4/de
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/122—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in a liquid, e.g. underwater
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
DE102019207990.3A 2019-05-31 2019-05-31 Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks Active DE102019207990B4 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102019207990.3A DE102019207990B4 (de) 2019-05-31 2019-05-31 Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks
TW109115107A TWI781398B (zh) 2019-05-31 2020-05-06 處理工件之方法及用於處理工件之系統
KR1020200064510A KR102338795B1 (ko) 2019-05-31 2020-05-28 공작물 처리 방법 및 공작물 처리 시스템
CN202010469579.1A CN112017995B (zh) 2019-05-31 2020-05-28 处理工件的方法和处理工件的系统
US16/885,526 US12224207B2 (en) 2019-05-31 2020-05-28 Method of processing a workpiece and system for processing a workpiece
CN202410421604.7A CN118471849A (zh) 2019-05-31 2020-05-28 处理工件的方法和处理工件的系统
JP2020094559A JP7278239B2 (ja) 2019-05-31 2020-05-29 ワークを処理する方法およびワークを処理するシステム
JP2022080454A JP7549622B2 (ja) 2019-05-31 2022-05-16 ワークを処理する方法およびワークを処理するシステム

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102019207990.3A DE102019207990B4 (de) 2019-05-31 2019-05-31 Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks

Publications (2)

Publication Number Publication Date
DE102019207990A1 DE102019207990A1 (de) 2020-12-03
DE102019207990B4 true DE102019207990B4 (de) 2024-03-21

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Country Status (6)

Country Link
US (1) US12224207B2 (https=)
JP (2) JP7278239B2 (https=)
KR (1) KR102338795B1 (https=)
CN (2) CN112017995B (https=)
DE (1) DE102019207990B4 (https=)
TW (1) TWI781398B (https=)

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DE102021110742B4 (de) 2021-04-27 2025-01-16 Infineon Technologies Ag Verfahren zum teilen von halbleiterwerkstücken, halbleiterwerkstück und gerät zum definieren eines trennbereichs in halbleiterwerkstücken
JP7749354B2 (ja) 2021-06-21 2025-10-06 株式会社ディスコ 加工方法
FR3130073B1 (fr) * 2021-12-06 2024-09-06 Commissariat Energie Atomique Procédé de transfert d’une couche
US20230245928A1 (en) * 2022-02-01 2023-08-03 Texas Instruments Incorporated Temperature-based semiconductor wafer singulation
JP2024054760A (ja) * 2022-10-05 2024-04-17 株式会社デンソー 加工ウェハの分割装置および加工ウェハの分割方法
CN115432920A (zh) * 2022-10-25 2022-12-06 深圳市益铂晶科技有限公司 一种玻璃激光切割的浸湿裂片方法
US20240174544A1 (en) * 2022-11-30 2024-05-30 Corning Incorporated Methods of laser cutting material
US20240174545A1 (en) * 2022-11-30 2024-05-30 Corning Incorporated Methods of separating a substrate

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JP2008270516A (ja) 2007-04-20 2008-11-06 Seiko Epson Corp 基板の分割方法、半導体装置の製造方法、及び電気光学装置の製造方法
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Also Published As

Publication number Publication date
JP7549622B2 (ja) 2024-09-11
JP2020198431A (ja) 2020-12-10
US12224207B2 (en) 2025-02-11
US20200381303A1 (en) 2020-12-03
KR20200138057A (ko) 2020-12-09
KR102338795B1 (ko) 2021-12-10
CN112017995A (zh) 2020-12-01
CN112017995B (zh) 2024-07-02
TW202101566A (zh) 2021-01-01
DE102019207990A1 (de) 2020-12-03
JP7278239B2 (ja) 2023-05-19
CN118471849A (zh) 2024-08-09
JP2022110082A (ja) 2022-07-28
TWI781398B (zh) 2022-10-21

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