JP7278239B2 - ワークを処理する方法およびワークを処理するシステム - Google Patents

ワークを処理する方法およびワークを処理するシステム Download PDF

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Publication number
JP7278239B2
JP7278239B2 JP2020094559A JP2020094559A JP7278239B2 JP 7278239 B2 JP7278239 B2 JP 7278239B2 JP 2020094559 A JP2020094559 A JP 2020094559A JP 2020094559 A JP2020094559 A JP 2020094559A JP 7278239 B2 JP7278239 B2 JP 7278239B2
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liquid medium
workpiece
wafer
modified region
work
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Japanese (ja)
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JP2020198431A (ja
Inventor
仁志 星野
アルギロフ、ツァニミール
泰吉 湯平
カール、ハインツ、プリーワッサー
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/122—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in a liquid, e.g. underwater
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
JP2020094559A 2019-05-31 2020-05-29 ワークを処理する方法およびワークを処理するシステム Active JP7278239B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022080454A JP7549622B2 (ja) 2019-05-31 2022-05-16 ワークを処理する方法およびワークを処理するシステム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019207990.3 2019-05-31
DE102019207990.3A DE102019207990B4 (de) 2019-05-31 2019-05-31 Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks

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JP2020198431A JP2020198431A (ja) 2020-12-10
JP7278239B2 true JP7278239B2 (ja) 2023-05-19

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US (1) US12224207B2 (https=)
JP (2) JP7278239B2 (https=)
KR (1) KR102338795B1 (https=)
CN (2) CN112017995B (https=)
DE (1) DE102019207990B4 (https=)
TW (1) TWI781398B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11081393B2 (en) 2019-12-09 2021-08-03 Infineon Technologies Ag Method for splitting semiconductor wafers
EP4015677A1 (en) * 2020-12-21 2022-06-22 Nickl Technologies GmbH Methods for separating a substrate from a wafer or ingot and apparatuses for separating a substrate from a wafer or ingot
JP7614918B2 (ja) * 2021-04-14 2025-01-16 株式会社ディスコ ウエーハの加工方法及びウエーハの加工装置
DE102021110742B4 (de) 2021-04-27 2025-01-16 Infineon Technologies Ag Verfahren zum teilen von halbleiterwerkstücken, halbleiterwerkstück und gerät zum definieren eines trennbereichs in halbleiterwerkstücken
JP7749354B2 (ja) 2021-06-21 2025-10-06 株式会社ディスコ 加工方法
FR3130073B1 (fr) * 2021-12-06 2024-09-06 Commissariat Energie Atomique Procédé de transfert d’une couche
US20230245928A1 (en) * 2022-02-01 2023-08-03 Texas Instruments Incorporated Temperature-based semiconductor wafer singulation
JP2024054760A (ja) * 2022-10-05 2024-04-17 株式会社デンソー 加工ウェハの分割装置および加工ウェハの分割方法
CN115432920A (zh) * 2022-10-25 2022-12-06 深圳市益铂晶科技有限公司 一种玻璃激光切割的浸湿裂片方法
US20240174544A1 (en) * 2022-11-30 2024-05-30 Corning Incorporated Methods of laser cutting material
US20240174545A1 (en) * 2022-11-30 2024-05-30 Corning Incorporated Methods of separating a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270516A (ja) 2007-04-20 2008-11-06 Seiko Epson Corp 基板の分割方法、半導体装置の製造方法、及び電気光学装置の製造方法
JP2019016651A (ja) 2017-07-04 2019-01-31 株式会社ディスコ ウェーハの加工方法
JP2019024038A (ja) 2017-07-24 2019-02-14 株式会社ディスコ ウェーハの加工方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185270A (ja) * 1992-01-16 1993-07-27 Kosaka Kenkyusho:Kk ガラスパネルの割断方法
JPH113009A (ja) 1997-06-12 1999-01-06 Ricoh Co Ltd 画像除去促進液、および該画像除去促進液を用いる被記録材の再生方法と再生装置
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP2003230978A (ja) 2002-02-13 2003-08-19 Matsushita Electric Ind Co Ltd 基板の加工方法
JP4067858B2 (ja) * 2002-04-16 2008-03-26 東京エレクトロン株式会社 Ａｌｄ成膜装置およびａｌｄ成膜方法
JP4515790B2 (ja) * 2004-03-08 2010-08-04 株式会社東芝 半導体装置の製造方法及びその製造装置
JP2006156472A (ja) 2004-11-25 2006-06-15 Seiko Epson Corp レジスト膜の除去方法およびレジスト膜除去装置
DE102005024563B9 (de) * 2005-05-28 2006-12-14 Schott Ag Verfahren zum Trennen von Glas und Verwendung einer dafür geeigneten Flüssigkeit
DE102006028718B4 (de) * 2006-06-20 2008-11-13 Infineon Technologies Ag Verfahren zur Vereinzelung von Halbleiterwafern zu Halbleiterchips
JP2009130128A (ja) 2007-11-22 2009-06-11 Denso Corp ウエハの分割方法
JP2009290148A (ja) 2008-06-02 2009-12-10 Disco Abrasive Syst Ltd ウエーハの分割方法
US9847243B2 (en) * 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
JP2011121817A (ja) * 2009-12-10 2011-06-23 Seiko Instruments Inc 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP2013144312A (ja) * 2011-10-07 2013-07-25 Canon Inc レーザ加工方法、レーザ加工装置及びインクジェットヘッドの製造方法
KR101615584B1 (ko) * 2011-11-21 2016-04-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 장치, 반도체 장치의 제조 방법 및 기록 매체
US9214353B2 (en) * 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
CN104520975B (zh) * 2012-07-30 2018-07-31 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
JP2014041924A (ja) * 2012-08-22 2014-03-06 Hamamatsu Photonics Kk 加工対象物切断方法
US9406551B2 (en) 2012-09-27 2016-08-02 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate
EP3024616B1 (de) 2013-07-23 2019-04-10 3D-Micromac AG Verfahren und vorrichtung zur trennung eines flachen werkstücks in mehrere teilstücke
JP2015035453A (ja) 2013-08-07 2015-02-19 アズビル株式会社 ウエハ
CN106459436B (zh) * 2014-04-24 2020-04-14 帝人株式会社 具有端表面的碳纤维强化树脂加工制品及其制造方法
JP6395634B2 (ja) * 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
JP2017092379A (ja) * 2015-11-16 2017-05-25 株式会社ディスコ 保護膜被覆方法
JP6608713B2 (ja) * 2016-01-19 2019-11-20 株式会社ディスコ ウエーハの加工方法
US20180015569A1 (en) * 2016-07-18 2018-01-18 Nanya Technology Corporation Chip and method of manufacturing chips
US20180040513A1 (en) * 2016-08-05 2018-02-08 Disco Corporation Processing method for wafer
US10978311B2 (en) * 2016-12-12 2021-04-13 Siltectra Gmbh Method for thinning solid body layers provided with components
JP6520964B2 (ja) * 2017-01-26 2019-05-29 日亜化学工業株式会社 発光素子の製造方法
JP2018182141A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 加工対象物切断方法
US12159805B2 (en) * 2017-04-20 2024-12-03 Siltectra Gmbh Method for producing wafers with modification lines of defined orientation
JP2019057595A (ja) * 2017-09-20 2019-04-11 株式会社東芝 半導体デバイス製造装置、及び、半導体デバイス製造方法
JP6946153B2 (ja) * 2017-11-16 2021-10-06 株式会社ディスコ ウエーハの生成方法およびウエーハ生成装置
KR102498148B1 (ko) * 2018-09-20 2023-02-08 삼성전자주식회사 반도체 장치의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270516A (ja) 2007-04-20 2008-11-06 Seiko Epson Corp 基板の分割方法、半導体装置の製造方法、及び電気光学装置の製造方法
JP2019016651A (ja) 2017-07-04 2019-01-31 株式会社ディスコ ウェーハの加工方法
JP2019024038A (ja) 2017-07-24 2019-02-14 株式会社ディスコ ウェーハの加工方法

Also Published As

Publication number Publication date
JP7549622B2 (ja) 2024-09-11
JP2020198431A (ja) 2020-12-10
US12224207B2 (en) 2025-02-11
US20200381303A1 (en) 2020-12-03
KR20200138057A (ko) 2020-12-09
KR102338795B1 (ko) 2021-12-10
CN112017995A (zh) 2020-12-01
CN112017995B (zh) 2024-07-02
TW202101566A (zh) 2021-01-01
DE102019207990A1 (de) 2020-12-03
CN118471849A (zh) 2024-08-09
JP2022110082A (ja) 2022-07-28
DE102019207990B4 (de) 2024-03-21
TWI781398B (zh) 2022-10-21

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