TWI781398B - 處理工件之方法及用於處理工件之系統 - Google Patents

處理工件之方法及用於處理工件之系統 Download PDF

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Publication number
TWI781398B
TWI781398B TW109115107A TW109115107A TWI781398B TW I781398 B TWI781398 B TW I781398B TW 109115107 A TW109115107 A TW 109115107A TW 109115107 A TW109115107 A TW 109115107A TW I781398 B TWI781398 B TW I781398B
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TW
Taiwan
Prior art keywords
liquid medium
workpiece
openings
wafer
modified
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TW109115107A
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English (en)
Chinese (zh)
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TW202101566A (zh
Inventor
星野仁志
特薩尼米爾 亞古洛夫
湯平泰吉
卡爾 Ｈ 普雷瓦瑟
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/122—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in a liquid, e.g. underwater
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H10W46/503—Located in scribe lines

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
TW109115107A 2019-05-31 2020-05-06 處理工件之方法及用於處理工件之系統 TWI781398B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019207990.3 2019-05-31
DE102019207990.3A DE102019207990B4 (de) 2019-05-31 2019-05-31 Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks

Publications (2)

Publication Number Publication Date
TW202101566A TW202101566A (zh) 2021-01-01
TWI781398B true TWI781398B (zh) 2022-10-21

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TW109115107A TWI781398B (zh) 2019-05-31 2020-05-06 處理工件之方法及用於處理工件之系統

Country Status (6)

Country Link
US (1) US12224207B2 (https=)
JP (2) JP7278239B2 (https=)
KR (1) KR102338795B1 (https=)
CN (2) CN112017995B (https=)
DE (1) DE102019207990B4 (https=)
TW (1) TWI781398B (https=)

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US11081393B2 (en) 2019-12-09 2021-08-03 Infineon Technologies Ag Method for splitting semiconductor wafers
EP4015677A1 (en) * 2020-12-21 2022-06-22 Nickl Technologies GmbH Methods for separating a substrate from a wafer or ingot and apparatuses for separating a substrate from a wafer or ingot
JP7614918B2 (ja) * 2021-04-14 2025-01-16 株式会社ディスコ ウエーハの加工方法及びウエーハの加工装置
DE102021110742B4 (de) 2021-04-27 2025-01-16 Infineon Technologies Ag Verfahren zum teilen von halbleiterwerkstücken, halbleiterwerkstück und gerät zum definieren eines trennbereichs in halbleiterwerkstücken
JP7749354B2 (ja) 2021-06-21 2025-10-06 株式会社ディスコ 加工方法
FR3130073B1 (fr) * 2021-12-06 2024-09-06 Commissariat Energie Atomique Procédé de transfert d’une couche
US20230245928A1 (en) * 2022-02-01 2023-08-03 Texas Instruments Incorporated Temperature-based semiconductor wafer singulation
JP2024054760A (ja) * 2022-10-05 2024-04-17 株式会社デンソー 加工ウェハの分割装置および加工ウェハの分割方法
CN115432920A (zh) * 2022-10-25 2022-12-06 深圳市益铂晶科技有限公司 一种玻璃激光切割的浸湿裂片方法
US20240174544A1 (en) * 2022-11-30 2024-05-30 Corning Incorporated Methods of laser cutting material
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Publication number Priority date Publication date Assignee Title
JPH05185270A (ja) * 1992-01-16 1993-07-27 Kosaka Kenkyusho:Kk ガラスパネルの割断方法
US20060266195A1 (en) * 2005-05-28 2006-11-30 Bernd Hoetzel Method of dividing glass into separate pieces with the aid of a cutting liquid and improved cutting liquid for said method
US20110138857A1 (en) * 2009-12-10 2011-06-16 Masashi Numata Bonded glass cutting method, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic device, and atomic timepiece
US20140245608A1 (en) * 2011-10-07 2014-09-04 Canon Kabushiki Kaisha Method and apparatus for laser-beam processing and method for manufacturing ink jet head
US20170106606A1 (en) * 2014-04-24 2017-04-20 Teijin Limited Carbon Fiber Reinforced Resin Processed Product having End Surface and Method of Manufacturing the Same
US20190088548A1 (en) * 2017-09-20 2019-03-21 Kabushiki Kaisha Toshiba Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

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Publication number Publication date
JP7549622B2 (ja) 2024-09-11
JP2020198431A (ja) 2020-12-10
US12224207B2 (en) 2025-02-11
US20200381303A1 (en) 2020-12-03
KR20200138057A (ko) 2020-12-09
KR102338795B1 (ko) 2021-12-10
CN112017995A (zh) 2020-12-01
CN112017995B (zh) 2024-07-02
TW202101566A (zh) 2021-01-01
DE102019207990A1 (de) 2020-12-03
JP7278239B2 (ja) 2023-05-19
CN118471849A (zh) 2024-08-09
JP2022110082A (ja) 2022-07-28
DE102019207990B4 (de) 2024-03-21

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