KR102338795B1 - 공작물 처리 방법 및 공작물 처리 시스템 - Google Patents
공작물 처리 방법 및 공작물 처리 시스템 Download PDFInfo
- Publication number
- KR102338795B1 KR102338795B1 KR1020200064510A KR20200064510A KR102338795B1 KR 102338795 B1 KR102338795 B1 KR 102338795B1 KR 1020200064510 A KR1020200064510 A KR 1020200064510A KR 20200064510 A KR20200064510 A KR 20200064510A KR 102338795 B1 KR102338795 B1 KR 102338795B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid medium
- workpiece
- wafer
- laser beam
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
- B23K26/122—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in a liquid, e.g. underwater
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
- B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
- H10W46/503—Located in scribe lines
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electromagnetism (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Multi-Process Working Machines And Systems (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019207990.3 | 2019-05-31 | ||
| DE102019207990.3A DE102019207990B4 (de) | 2019-05-31 | 2019-05-31 | Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200138057A KR20200138057A (ko) | 2020-12-09 |
| KR102338795B1 true KR102338795B1 (ko) | 2021-12-10 |
Family
ID=73264826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200064510A Active KR102338795B1 (ko) | 2019-05-31 | 2020-05-28 | 공작물 처리 방법 및 공작물 처리 시스템 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12224207B2 (https=) |
| JP (2) | JP7278239B2 (https=) |
| KR (1) | KR102338795B1 (https=) |
| CN (2) | CN112017995B (https=) |
| DE (1) | DE102019207990B4 (https=) |
| TW (1) | TWI781398B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11081393B2 (en) | 2019-12-09 | 2021-08-03 | Infineon Technologies Ag | Method for splitting semiconductor wafers |
| EP4015677A1 (en) * | 2020-12-21 | 2022-06-22 | Nickl Technologies GmbH | Methods for separating a substrate from a wafer or ingot and apparatuses for separating a substrate from a wafer or ingot |
| JP7614918B2 (ja) * | 2021-04-14 | 2025-01-16 | 株式会社ディスコ | ウエーハの加工方法及びウエーハの加工装置 |
| DE102021110742B4 (de) | 2021-04-27 | 2025-01-16 | Infineon Technologies Ag | Verfahren zum teilen von halbleiterwerkstücken, halbleiterwerkstück und gerät zum definieren eines trennbereichs in halbleiterwerkstücken |
| JP7749354B2 (ja) | 2021-06-21 | 2025-10-06 | 株式会社ディスコ | 加工方法 |
| FR3130073B1 (fr) * | 2021-12-06 | 2024-09-06 | Commissariat Energie Atomique | Procédé de transfert d’une couche |
| US20230245928A1 (en) * | 2022-02-01 | 2023-08-03 | Texas Instruments Incorporated | Temperature-based semiconductor wafer singulation |
| JP2024054760A (ja) * | 2022-10-05 | 2024-04-17 | 株式会社デンソー | 加工ウェハの分割装置および加工ウェハの分割方法 |
| CN115432920A (zh) * | 2022-10-25 | 2022-12-06 | 深圳市益铂晶科技有限公司 | 一种玻璃激光切割的浸湿裂片方法 |
| US20240174544A1 (en) * | 2022-11-30 | 2024-05-30 | Corning Incorporated | Methods of laser cutting material |
| US20240174545A1 (en) * | 2022-11-30 | 2024-05-30 | Corning Incorporated | Methods of separating a substrate |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05185270A (ja) * | 1992-01-16 | 1993-07-27 | Kosaka Kenkyusho:Kk | ガラスパネルの割断方法 |
| JPH113009A (ja) | 1997-06-12 | 1999-01-06 | Ricoh Co Ltd | 画像除去促進液、および該画像除去促進液を用いる被記録材の再生方法と再生装置 |
| JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| JP2003230978A (ja) | 2002-02-13 | 2003-08-19 | Matsushita Electric Ind Co Ltd | 基板の加工方法 |
| JP4067858B2 (ja) * | 2002-04-16 | 2008-03-26 | 東京エレクトロン株式会社 | Ald成膜装置およびald成膜方法 |
| JP4515790B2 (ja) * | 2004-03-08 | 2010-08-04 | 株式会社東芝 | 半導体装置の製造方法及びその製造装置 |
| JP2006156472A (ja) | 2004-11-25 | 2006-06-15 | Seiko Epson Corp | レジスト膜の除去方法およびレジスト膜除去装置 |
| DE102005024563B9 (de) * | 2005-05-28 | 2006-12-14 | Schott Ag | Verfahren zum Trennen von Glas und Verwendung einer dafür geeigneten Flüssigkeit |
| DE102006028718B4 (de) * | 2006-06-20 | 2008-11-13 | Infineon Technologies Ag | Verfahren zur Vereinzelung von Halbleiterwafern zu Halbleiterchips |
| JP2008270516A (ja) | 2007-04-20 | 2008-11-06 | Seiko Epson Corp | 基板の分割方法、半導体装置の製造方法、及び電気光学装置の製造方法 |
| JP2009130128A (ja) | 2007-11-22 | 2009-06-11 | Denso Corp | ウエハの分割方法 |
| JP2009290148A (ja) | 2008-06-02 | 2009-12-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
| US9847243B2 (en) * | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| JP2011121817A (ja) * | 2009-12-10 | 2011-06-23 | Seiko Instruments Inc | 接合ガラスの切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 |
| JP2013042119A (ja) * | 2011-07-21 | 2013-02-28 | Hamamatsu Photonics Kk | 発光素子の製造方法 |
| JP2013144312A (ja) * | 2011-10-07 | 2013-07-25 | Canon Inc | レーザ加工方法、レーザ加工装置及びインクジェットヘッドの製造方法 |
| KR101615584B1 (ko) * | 2011-11-21 | 2016-04-26 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 장치, 반도체 장치의 제조 방법 및 기록 매체 |
| US9214353B2 (en) * | 2012-02-26 | 2015-12-15 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
| CN104520975B (zh) * | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | 衬底处理装置及半导体器件的制造方法 |
| JP2014041924A (ja) * | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
| US9406551B2 (en) | 2012-09-27 | 2016-08-02 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate |
| EP3024616B1 (de) | 2013-07-23 | 2019-04-10 | 3D-Micromac AG | Verfahren und vorrichtung zur trennung eines flachen werkstücks in mehrere teilstücke |
| JP2015035453A (ja) | 2013-08-07 | 2015-02-19 | アズビル株式会社 | ウエハ |
| CN106459436B (zh) * | 2014-04-24 | 2020-04-14 | 帝人株式会社 | 具有端表面的碳纤维强化树脂加工制品及其制造方法 |
| JP6395634B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
| JP2017092379A (ja) * | 2015-11-16 | 2017-05-25 | 株式会社ディスコ | 保護膜被覆方法 |
| JP6608713B2 (ja) * | 2016-01-19 | 2019-11-20 | 株式会社ディスコ | ウエーハの加工方法 |
| US20180015569A1 (en) * | 2016-07-18 | 2018-01-18 | Nanya Technology Corporation | Chip and method of manufacturing chips |
| US20180040513A1 (en) * | 2016-08-05 | 2018-02-08 | Disco Corporation | Processing method for wafer |
| US10978311B2 (en) * | 2016-12-12 | 2021-04-13 | Siltectra Gmbh | Method for thinning solid body layers provided with components |
| JP6520964B2 (ja) * | 2017-01-26 | 2019-05-29 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| JP2018182141A (ja) * | 2017-04-17 | 2018-11-15 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
| US12159805B2 (en) * | 2017-04-20 | 2024-12-03 | Siltectra Gmbh | Method for producing wafers with modification lines of defined orientation |
| JP6890890B2 (ja) * | 2017-07-04 | 2021-06-18 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2019024038A (ja) * | 2017-07-24 | 2019-02-14 | 株式会社ディスコ | ウェーハの加工方法 |
| JP2019057595A (ja) * | 2017-09-20 | 2019-04-11 | 株式会社東芝 | 半導体デバイス製造装置、及び、半導体デバイス製造方法 |
| JP6946153B2 (ja) * | 2017-11-16 | 2021-10-06 | 株式会社ディスコ | ウエーハの生成方法およびウエーハ生成装置 |
| KR102498148B1 (ko) * | 2018-09-20 | 2023-02-08 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
-
2019
- 2019-05-31 DE DE102019207990.3A patent/DE102019207990B4/de active Active
-
2020
- 2020-05-06 TW TW109115107A patent/TWI781398B/zh active
- 2020-05-28 CN CN202010469579.1A patent/CN112017995B/zh active Active
- 2020-05-28 US US16/885,526 patent/US12224207B2/en active Active
- 2020-05-28 CN CN202410421604.7A patent/CN118471849A/zh active Pending
- 2020-05-28 KR KR1020200064510A patent/KR102338795B1/ko active Active
- 2020-05-29 JP JP2020094559A patent/JP7278239B2/ja active Active
-
2022
- 2022-05-16 JP JP2022080454A patent/JP7549622B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7549622B2 (ja) | 2024-09-11 |
| JP2020198431A (ja) | 2020-12-10 |
| US12224207B2 (en) | 2025-02-11 |
| US20200381303A1 (en) | 2020-12-03 |
| KR20200138057A (ko) | 2020-12-09 |
| CN112017995A (zh) | 2020-12-01 |
| CN112017995B (zh) | 2024-07-02 |
| TW202101566A (zh) | 2021-01-01 |
| DE102019207990A1 (de) | 2020-12-03 |
| JP7278239B2 (ja) | 2023-05-19 |
| CN118471849A (zh) | 2024-08-09 |
| JP2022110082A (ja) | 2022-07-28 |
| DE102019207990B4 (de) | 2024-03-21 |
| TWI781398B (zh) | 2022-10-21 |
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