DE102007025992A1 - Verfahren zur Herstellung eines MEMS-Packages - Google Patents

Verfahren zur Herstellung eines MEMS-Packages Download PDF

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Publication number
DE102007025992A1
DE102007025992A1 DE102007025992A DE102007025992A DE102007025992A1 DE 102007025992 A1 DE102007025992 A1 DE 102007025992A1 DE 102007025992 A DE102007025992 A DE 102007025992A DE 102007025992 A DE102007025992 A DE 102007025992A DE 102007025992 A1 DE102007025992 A1 DE 102007025992A1
Authority
DE
Germany
Prior art keywords
mems chip
metal frame
carrier substrate
frame
mems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007025992A
Other languages
German (de)
English (en)
Inventor
Christian Bauer
Hans Krüger
Gregor Dr. Feiertag
Alois Stelzl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SnapTrack Inc
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to DE102007025992A priority Critical patent/DE102007025992A1/de
Priority to JP2010510758A priority patent/JP5450396B2/ja
Priority to PCT/EP2008/056787 priority patent/WO2008148736A2/de
Publication of DE102007025992A1 publication Critical patent/DE102007025992A1/de
Priority to US12/627,707 priority patent/US8404516B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Wire Bonding (AREA)
DE102007025992A 2007-06-04 2007-06-04 Verfahren zur Herstellung eines MEMS-Packages Withdrawn DE102007025992A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102007025992A DE102007025992A1 (de) 2007-06-04 2007-06-04 Verfahren zur Herstellung eines MEMS-Packages
JP2010510758A JP5450396B2 (ja) 2007-06-04 2008-06-02 Ｍｅｍｓパッケージの製造方法
PCT/EP2008/056787 WO2008148736A2 (de) 2007-06-04 2008-06-02 Verfahren zur herstellung eines mems-packages
US12/627,707 US8404516B2 (en) 2007-06-04 2009-11-30 Method for producing a MEMS package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007025992A DE102007025992A1 (de) 2007-06-04 2007-06-04 Verfahren zur Herstellung eines MEMS-Packages

Publications (1)

Publication Number Publication Date
DE102007025992A1 true DE102007025992A1 (de) 2008-12-11

Family

ID=39942019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007025992A Withdrawn DE102007025992A1 (de) 2007-06-04 2007-06-04 Verfahren zur Herstellung eines MEMS-Packages

Country Status (4)

Country Link
US (1) US8404516B2 (enExample)
JP (1) JP5450396B2 (enExample)
DE (1) DE102007025992A1 (enExample)
WO (1) WO2008148736A2 (enExample)

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DE102010032506A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und Herstellungsverfahren
DE102010033551A1 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur Herstellung einer Mehrzahl von elektronischen Bauelementen mit elektromagnetischer Schirmung und elektronisches Bauelement mit elektromagnetischer Schirmung
DE102011018296A1 (de) * 2010-08-25 2012-03-01 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
DE102010056431A1 (de) * 2010-12-28 2012-06-28 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
WO2012136544A1 (de) * 2011-04-08 2012-10-11 Epcos Ag Waferlevel-package und verfahren zur herstellung
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
DE102012223982A1 (de) * 2012-12-20 2014-06-26 Continental Teves Ag & Co. Ohg Verfahren zum Herstellen einer elektronischen Baugruppe
WO2015055609A1 (de) * 2013-10-15 2015-04-23 Continental Automotive Gmbh Sensorelement
DE102013224645A1 (de) * 2013-11-29 2015-06-03 Continental Teves Ag & Co. Ohg Verfahren zum Herstellen einer elektronischen Baugruppe
DE102015100757B3 (de) * 2015-01-20 2016-06-16 Epcos Ag Modul mit spannungsfrei befestigtem MEMS-Bauelement
US9386734B2 (en) 2010-08-05 2016-07-05 Epcos Ag Method for producing a plurality of electronic devices
DE102019103761A1 (de) * 2019-02-14 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines bauelements und bauelement
DE112020004850B4 (de) 2019-10-09 2023-08-10 Microchip Technology Inc. Gehäustes elektronisches die mit mikrokavität und verfahren zur bildung eines gehäusten elektronischen dies mit mikrokavität

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KR20140023112A (ko) * 2012-08-17 2014-02-26 삼성전자주식회사 반도체 패키지를 포함하는 전자 장치 및 그 제조 방법
JP6179843B2 (ja) * 2012-12-04 2017-08-16 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 実装装置及び実装方法
WO2014115331A1 (ja) * 2013-01-28 2014-07-31 株式会社島津製作所 ガス圧力コントローラ
US9343431B2 (en) 2013-07-10 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Dam structure for enhancing joint yield in bonding processes
US9368458B2 (en) 2013-07-10 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Die-on-interposer assembly with dam structure and method of manufacturing the same
CN104425419B (zh) * 2013-08-30 2017-11-03 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US9449934B2 (en) * 2013-12-04 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Solder joint structure for ball grid array in wafer level package
CN105084294A (zh) * 2014-04-21 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法、电子装置
CN107534741A (zh) * 2015-04-17 2018-01-02 奥林巴斯株式会社 摄像装置
US10141197B2 (en) * 2016-03-30 2018-11-27 Stmicroelectronics S.R.L. Thermosonically bonded connection for flip chip packages
KR101837514B1 (ko) * 2016-06-07 2018-03-14 주식회사 네패스 반도체 패키지, 이의 제조 방법 및 시스템 인 패키지
DE102017106055B4 (de) * 2017-03-21 2021-04-08 Tdk Corporation Trägersubstrat für stressempflindliches Bauelement und Verfahren zur Herstellung
JP6992292B2 (ja) 2017-07-07 2022-01-13 コニカミノルタ株式会社 Ｍｅｍｓトランスデューサーの製造方法、ｍｅｍｓトランスデューサー、超音波探触子、および超音波診断装置
CN107706118A (zh) * 2017-09-07 2018-02-16 维沃移动通信有限公司 一种芯片封装方法及芯片封装结构
CN113819899B (zh) * 2021-11-22 2022-03-11 北京晨晶电子有限公司 异质集成表贴陀螺

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DE102004005668A1 (de) * 2004-02-05 2005-08-25 Epcos Ag Elektrisches Bauelement und Herstellungsverfahren
WO2005102910A1 (de) 2004-04-22 2005-11-03 Epcos Ag Verkapseltes elektrisches bauelement und verfahren zur herstellung

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010032506A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und Herstellungsverfahren
WO2012013416A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und herstellungsverfahren
US9253886B2 (en) 2010-07-28 2016-02-02 Epcos Ag Module and production method
DE102010033551A1 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur Herstellung einer Mehrzahl von elektronischen Bauelementen mit elektromagnetischer Schirmung und elektronisches Bauelement mit elektromagnetischer Schirmung
US9386734B2 (en) 2010-08-05 2016-07-05 Epcos Ag Method for producing a plurality of electronic devices
DE102011018296A1 (de) * 2010-08-25 2012-03-01 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
US9382110B2 (en) 2010-08-25 2016-07-05 Epcos Ag Component and method for producing a component
DE102011018296B4 (de) 2010-08-25 2020-07-30 Snaptrack, Inc. Bauelement und Verfahren zum Herstellen eines Bauelements
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US20100127377A1 (en) 2010-05-27
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US8404516B2 (en) 2013-03-26
JP5450396B2 (ja) 2014-03-26
WO2008148736A3 (de) 2009-04-02

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