DE102007015534B4 - Leistungshalbleitermodul - Google Patents

Leistungshalbleitermodul Download PDF

Info

Publication number
DE102007015534B4
DE102007015534B4 DE102007015534.6A DE102007015534A DE102007015534B4 DE 102007015534 B4 DE102007015534 B4 DE 102007015534B4 DE 102007015534 A DE102007015534 A DE 102007015534A DE 102007015534 B4 DE102007015534 B4 DE 102007015534B4
Authority
DE
Germany
Prior art keywords
power semiconductor
heat sink
circuit substrate
drive circuit
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102007015534.6A
Other languages
German (de)
English (en)
Other versions
DE102007015534A1 (de
Inventor
Yasuto KAWAGUCHI
Yukimasa Hayashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102007015534A1 publication Critical patent/DE102007015534A1/de
Application granted granted Critical
Publication of DE102007015534B4 publication Critical patent/DE102007015534B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
DE102007015534.6A 2006-09-28 2007-03-30 Leistungshalbleitermodul Expired - Fee Related DE102007015534B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-265178 2006-09-28
JP2006265178A JP5168866B2 (ja) 2006-09-28 2006-09-28 パワー半導体モジュール

Publications (2)

Publication Number Publication Date
DE102007015534A1 DE102007015534A1 (de) 2008-04-03
DE102007015534B4 true DE102007015534B4 (de) 2015-01-22

Family

ID=39134590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007015534.6A Expired - Fee Related DE102007015534B4 (de) 2006-09-28 2007-03-30 Leistungshalbleitermodul

Country Status (5)

Country Link
US (1) US7514777B2 (enExample)
JP (1) JP5168866B2 (enExample)
CN (1) CN101154653B (enExample)
DE (1) DE102007015534B4 (enExample)
FR (1) FR2906645A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834532B2 (ja) * 1979-12-07 1983-07-27 新日本製鐵株式会社 方向性電磁鋼板の仕上焼鈍方法
EP2182551A1 (en) * 2008-10-29 2010-05-05 ABB Research Ltd. Connection arrangement for semiconductor power modules
EP3633723B1 (en) * 2009-05-14 2023-02-22 Rohm Co., Ltd. Semiconductor device
DE102009026558B3 (de) * 2009-05-28 2010-12-02 Infineon Technologies Ag Leistungshalbleitermodul mit beweglich gelagerten Schaltungsträgern und Verfahren zur Herstellung eines solchen Leistungshalbleitermoduls
US8076696B2 (en) * 2009-10-30 2011-12-13 General Electric Company Power module assembly with reduced inductance
CN109166833B (zh) * 2010-01-15 2022-04-08 三菱电机株式会社 电力用半导体模块
JP5212417B2 (ja) 2010-04-12 2013-06-19 三菱電機株式会社 パワー半導体モジュール
JP5174085B2 (ja) 2010-05-20 2013-04-03 三菱電機株式会社 半導体装置
JP6086863B2 (ja) * 2011-06-27 2017-03-01 ローム株式会社 半導体モジュール
CN102364676B (zh) * 2011-11-30 2013-10-30 江苏宏微科技有限公司 半导体功率模块封装外壳结构
US9890470B2 (en) * 2012-01-30 2018-02-13 Kyocera Corporation Seed crystal holder for growing a crystal by a solution method
DE102012211446B4 (de) * 2012-07-02 2016-05-12 Infineon Technologies Ag Explosionsgeschütztes halbleitermodul
JP6138277B2 (ja) * 2013-12-17 2017-05-31 三菱電機株式会社 パワー半導体モジュール
CN103675640A (zh) * 2013-12-19 2014-03-26 江苏瑞新科技股份有限公司 一种半导体p、n类型非接触测试传感器
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
CN113707643A (zh) * 2021-08-30 2021-11-26 中国振华集团永光电子有限公司（国营第八七三厂） 一种高集成高可靠igbt功率模块及其制造方法
CN117175962A (zh) * 2022-06-02 2023-12-05 信通交通器材股份有限公司 功率模组

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2347049A1 (de) * 1973-08-16 1975-02-27 Bbc Brown Boveri & Cie Verfahren zum einkapseln von miniaturisierten schaltungen, insbesondere hybridschaltungen, und danach hergestellte eingekapselte miniaturisierte schaltungen
EP0789397A2 (en) * 1996-02-07 1997-08-13 Hitachi, Ltd. Circuit board and semiconductor device using the circuit board
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
US6844621B2 (en) * 2002-08-13 2005-01-18 Fuji Electric Co., Ltd. Semiconductor device and method of relaxing thermal stress

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2726515B2 (ja) * 1989-09-22 1998-03-11 電気化学工業株式会社 半導体塔載用回路基板及びその製造方法
JP3206717B2 (ja) * 1996-04-02 2001-09-10 富士電機株式会社 電力用半導体モジュール
JP3599517B2 (ja) 1997-01-29 2004-12-08 電気化学工業株式会社 パワーモジュール用回路基板
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
US7173336B2 (en) * 2000-01-31 2007-02-06 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP2002076197A (ja) 2000-08-24 2002-03-15 Toshiba Corp 半導体装置用基板及び半導体装置
JP3923716B2 (ja) * 2000-09-29 2007-06-06 株式会社東芝 半導体装置
US20020043727A1 (en) * 2000-10-13 2002-04-18 Hsiao-Che Wu Bonding pad structure
JP4381047B2 (ja) 2003-07-09 2009-12-09 東芝三菱電機産業システム株式会社 半導体装置
JP4037332B2 (ja) * 2003-07-10 2008-01-23 シャープ株式会社 Ｉｃモジュールおよびｉｃカード
JP4097613B2 (ja) * 2004-03-09 2008-06-11 三菱電機株式会社 半導体装置
JP4376106B2 (ja) 2004-03-30 2009-12-02 電気化学工業株式会社 セラミックス二層回路基板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2347049A1 (de) * 1973-08-16 1975-02-27 Bbc Brown Boveri & Cie Verfahren zum einkapseln von miniaturisierten schaltungen, insbesondere hybridschaltungen, und danach hergestellte eingekapselte miniaturisierte schaltungen
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
EP0789397A2 (en) * 1996-02-07 1997-08-13 Hitachi, Ltd. Circuit board and semiconductor device using the circuit board
US6844621B2 (en) * 2002-08-13 2005-01-18 Fuji Electric Co., Ltd. Semiconductor device and method of relaxing thermal stress

Also Published As

Publication number Publication date
US7514777B2 (en) 2009-04-07
JP5168866B2 (ja) 2013-03-27
CN101154653A (zh) 2008-04-02
FR2906645A1 (fr) 2008-04-04
US20080105896A1 (en) 2008-05-08
DE102007015534A1 (de) 2008-04-03
JP2008085169A (ja) 2008-04-10
CN101154653B (zh) 2010-05-26

Similar Documents

Publication Publication Date Title
DE102007015534B4 (de) Leistungshalbleitermodul
DE102006012429B4 (de) Halbleitervorrichtung
DE102006051454B4 (de) Halbleitervorrichtung
DE112017004739B4 (de) Halbleitereinheit und Leistungswandler
DE19939933A1 (de) Leistungs-Moduleinheit
DE69216016T2 (de) Halbleiteranordnung
DE102014104856B4 (de) Explosionsgeschütztes Leistungshalbleitermodul
DE102006027481B4 (de) Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen
DE102004060935B4 (de) Leistungshalbleitervorrichtung
DE102016206233A1 (de) Leistungsmodul mit einem Ga-Halbleiterschalter sowie Verfahren zu dessen Herstellung, Wechselrichter und Fahrzeugantriebsystem
DE112015004424T5 (de) Elektronische Vorrichtung und Verfahren zur Herstellung der elektronischen Vorrichtung
EP0889526A2 (de) Leistungshalbleitermodul mit geschlossenen Submodulen
DE102013219780A1 (de) Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102022207922B3 (de) Leistungselektronikmodul, Elektroantrieb und Kraftfahrzeug
DE102020202490B4 (de) Halbleitervorrichtung und deren Herstellungsverfahren
WO2018046165A1 (de) Leistungsmodul
DE102013216035B3 (de) Leistungshalbleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE4407810A1 (de) Schaltungsanordnung
DE212021000463U1 (de) Leistungsmodul
DE102017108172B4 (de) SMD-Package und Verfahren zur Herstellung eines SMD-Packages
DE102007024160B4 (de) Leistungshalbleitermodul
WO2020221864A1 (de) Leistungselektronik-modul mit verbesserter kühlung
DE102021210594B4 (de) Leistungshalbleitermodul und Antriebsstrang für ein Fahrzeug aufweisend ein derartiges Leistungshalbleitermodul
WO2021058185A1 (de) Träger für elektrische bauelemente und elektronikmodul
DE102022208289B3 (de) Elektrische Vorrichtung, Verfahren zum Herstellen einer elektrischen Vorrichtung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01L 23/051 AFI20070330BHDE

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R084 Declaration of willingness to licence
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee