DE10063064A1 - Chemisch verstärkte positiv arbeitende Resistzusammensetzung - Google Patents

Chemisch verstärkte positiv arbeitende Resistzusammensetzung

Info

Publication number
DE10063064A1
DE10063064A1 DE10063064A DE10063064A DE10063064A1 DE 10063064 A1 DE10063064 A1 DE 10063064A1 DE 10063064 A DE10063064 A DE 10063064A DE 10063064 A DE10063064 A DE 10063064A DE 10063064 A1 DE10063064 A1 DE 10063064A1
Authority
DE
Germany
Prior art keywords
meth
acrylic acid
adamantyl ester
derived
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10063064A
Other languages
German (de)
English (en)
Inventor
Yasunori Uetani
Hiroaki Fujishima
Yoshiyuki Takata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of DE10063064A1 publication Critical patent/DE10063064A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE10063064A 1999-12-22 2000-12-18 Chemisch verstärkte positiv arbeitende Resistzusammensetzung Withdrawn DE10063064A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36472699A JP4453138B2 (ja) 1999-12-22 1999-12-22 化学増幅型ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
DE10063064A1 true DE10063064A1 (de) 2001-06-28

Family

ID=18482519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10063064A Withdrawn DE10063064A1 (de) 1999-12-22 2000-12-18 Chemisch verstärkte positiv arbeitende Resistzusammensetzung

Country Status (6)

Country Link
US (1) US6495306B2 (https=)
JP (1) JP4453138B2 (https=)
KR (1) KR100750815B1 (https=)
DE (1) DE10063064A1 (https=)
GB (1) GB2358256B (https=)
TW (1) TWI227378B (https=)

Families Citing this family (31)

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KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4329214B2 (ja) * 2000-03-28 2009-09-09 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4576737B2 (ja) * 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
US6727039B2 (en) * 2000-09-25 2004-04-27 Fuji Photo Film Co., Ltd. Positive photoresist composition
TW538316B (en) * 2001-01-19 2003-06-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
EP1267210B1 (en) 2001-06-12 2018-02-21 FUJIFILM Corporation Positive resist composition
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
JP3841399B2 (ja) 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
US7160669B2 (en) * 2002-10-16 2007-01-09 Sumitomo Chemical Company, Limited Chemical amplification type resist composition
US7666569B2 (en) * 2002-12-26 2010-02-23 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP2004333548A (ja) * 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005010488A (ja) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4092571B2 (ja) * 2003-08-05 2008-05-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
EP1666971A1 (en) * 2003-09-25 2006-06-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and resist laminate for low-acceleration electron beam and method of pattern formation
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP2005344009A (ja) * 2004-06-03 2005-12-15 Shin Etsu Chem Co Ltd レジスト材料用高分子化合物及びその製造方法並びに化学増幅ポジ型レジスト材料
JP2007003619A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
US7927779B2 (en) * 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
JP4695941B2 (ja) * 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7776510B2 (en) * 2007-06-13 2010-08-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound and acid generator
JP5523854B2 (ja) * 2009-02-06 2014-06-18 住友化学株式会社 化学増幅型フォトレジスト組成物及びパターン形成方法
WO2011125630A1 (ja) * 2010-04-01 2011-10-13 三菱瓦斯化学株式会社 アダマンチル（メタ）アクリル系モノマー及びそれを繰り返し単位に含む（メタ）アクリル系重合体

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3546679B2 (ja) * 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
KR100538968B1 (ko) * 1997-02-18 2006-07-11 후지 샤신 필름 가부시기가이샤 포지티브감광성조성물
JP3948795B2 (ja) * 1997-09-30 2007-07-25 ダイセル化学工業株式会社 放射線感光材料及びそれを用いたパターン形成方法
JP3972438B2 (ja) * 1998-01-26 2007-09-05 住友化学株式会社 化学増幅型のポジ型レジスト組成物
JP3738562B2 (ja) * 1998-02-19 2006-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100547078B1 (ko) * 1998-05-25 2006-01-31 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 화합물 및 포토레지스트용 수지 조성물
JP4434358B2 (ja) * 1998-05-25 2010-03-17 ダイセル化学工業株式会社 フォトレジスト用化合物およびフォトレジスト用樹脂組成物
WO1999061404A1 (en) * 1998-05-25 1999-12-02 Daichel Chemical Industries, Ltd. Acid-sensitive compound and resin composition for photoresist
JP3810957B2 (ja) * 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
JP3876571B2 (ja) * 1998-08-26 2007-01-31 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP3890380B2 (ja) * 1999-05-28 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4585636B2 (ja) * 1999-09-30 2010-11-24 ダイセル化学工業株式会社 アクリル系単量体の重合方法
JP2002006501A (ja) * 1999-11-09 2002-01-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物

Also Published As

Publication number Publication date
GB2358256A (en) 2001-07-18
US20010014428A1 (en) 2001-08-16
KR100750815B1 (ko) 2007-08-22
JP4453138B2 (ja) 2010-04-21
TWI227378B (en) 2005-02-01
GB2358256B (en) 2001-12-12
KR20010062537A (ko) 2001-07-07
JP2001183836A (ja) 2001-07-06
US6495306B2 (en) 2002-12-17
GB0031072D0 (en) 2001-01-31

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: SUMITOMO CHEMICAL CO. LTD., TOKIO/TOKYO, JP

8110 Request for examination paragraph 44
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140701