DE69800897T2 - Chemisch verstärkte Positiv-Resistzusammensetzung - Google Patents

Chemisch verstärkte Positiv-Resistzusammensetzung

Info

Publication number
DE69800897T2
DE69800897T2 DE69800897T DE69800897T DE69800897T2 DE 69800897 T2 DE69800897 T2 DE 69800897T2 DE 69800897 T DE69800897 T DE 69800897T DE 69800897 T DE69800897 T DE 69800897T DE 69800897 T2 DE69800897 T2 DE 69800897T2
Authority
DE
Germany
Prior art keywords
resist composition
positive resist
chemically enhanced
enhanced positive
chemically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69800897T
Other languages
English (en)
Other versions
DE69800897D1 (de
Inventor
Yasunori Uetani
Hiroaki Fujishima
Yoshiko Miya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Application granted granted Critical
Publication of DE69800897D1 publication Critical patent/DE69800897D1/de
Publication of DE69800897T2 publication Critical patent/DE69800897T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
    • C07C309/57—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C07C309/58—Carboxylic acid groups or esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE69800897T 1997-01-29 1998-01-27 Chemisch verstärkte Positiv-Resistzusammensetzung Expired - Lifetime DE69800897T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1535397 1997-01-29

Publications (2)

Publication Number Publication Date
DE69800897D1 DE69800897D1 (de) 2001-07-19
DE69800897T2 true DE69800897T2 (de) 2001-10-18

Family

ID=11886442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800897T Expired - Lifetime DE69800897T2 (de) 1997-01-29 1998-01-27 Chemisch verstärkte Positiv-Resistzusammensetzung

Country Status (4)

Country Link
EP (1) EP0856773B1 (de)
KR (1) KR100562180B1 (de)
DE (1) DE69800897T2 (de)
TW (1) TW482946B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576392B1 (en) * 1996-12-07 2003-06-10 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6214517B1 (en) 1997-02-17 2001-04-10 Fuji Photo Film Co., Ltd. Positive photoresist composition
EP0877293B1 (de) * 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positiv arbeitende lichtempfindliche Zusammensetzung
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
US6706826B1 (en) 1998-03-27 2004-03-16 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition
KR100574574B1 (ko) 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
US6852466B2 (en) 1998-12-23 2005-02-08 Shipley Company, L.L.C. Photoresist compositions particularly suitable for short wavelength imaging
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
US6344582B1 (en) 1999-02-22 2002-02-05 Sumitomo Chemical Company, Limited Process for producing a 2-adamantyl (meth>acrylate
KR100704423B1 (ko) 1999-03-31 2007-04-06 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 레지스트
EP1209525A4 (de) * 1999-07-12 2003-03-19 Mitsubishi Rayon Co Chemisch verstärkte resistzusammensetzung
JP2001215704A (ja) * 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP4576737B2 (ja) * 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI370327B (en) * 2004-01-21 2012-08-11 Sumitomo Chemical Co A chemical amplification type positive resist composition
US7232642B2 (en) 2004-05-11 2007-06-19 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition, a haloester derivative and a process for producing the same
JP4510695B2 (ja) 2005-05-10 2010-07-28 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP6191601B2 (ja) 2012-06-04 2017-09-06 Jnc株式会社 β−（メタ）アクリロイルオキシ−γ−ブチロラクトン類の製造方法
CN114276317A (zh) * 2021-12-27 2022-04-05 徐州博康信息化学品有限公司 一种含内酯结构的光刻胶树脂单体的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149848A (ja) * 1988-11-30 1990-06-08 Oki Electric Ind Co Ltd 感光性材料及びこれを用いた感光性組成物
JPH04251849A (ja) * 1991-01-29 1992-09-08 Fuji Photo Film Co Ltd 感電離放射線性樹脂組成物
KR100326009B1 (ko) * 1993-07-20 2002-05-10 야마사키 노리쓰카 오르토스피로에스테르화합물,이를함유하는저경화수축성수지조성물및경화물
US5571657A (en) * 1993-09-30 1996-11-05 Shipley Company, Inc. Modified cation exhange process
JP3009320B2 (ja) * 1993-12-24 2000-02-14 三菱電機株式会社 分解性樹脂および感光性樹脂組成物

Also Published As

Publication number Publication date
KR19980070853A (ko) 1998-10-26
TW482946B (en) 2002-04-11
EP0856773A1 (de) 1998-08-05
KR100562180B1 (ko) 2006-07-03
EP0856773B1 (de) 2001-06-13
DE69800897D1 (de) 2001-07-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO CHEMICAL CO. LTD., TOKIO/TOKYO, JP