DE69708220D1 - Chemisch sensibilisierte Resistzusammensetzung - Google Patents

Chemisch sensibilisierte Resistzusammensetzung

Info

Publication number
DE69708220D1
DE69708220D1 DE69708220T DE69708220T DE69708220D1 DE 69708220 D1 DE69708220 D1 DE 69708220D1 DE 69708220 T DE69708220 T DE 69708220T DE 69708220 T DE69708220 T DE 69708220T DE 69708220 D1 DE69708220 D1 DE 69708220D1
Authority
DE
Germany
Prior art keywords
resist composition
chemically sensitized
sensitized resist
chemically
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69708220T
Other languages
English (en)
Other versions
DE69708220T2 (de
Inventor
Katsumi Oomori
Hideo Hada
Fumitake Kaneko
Mitsuru Sato
Kazufumi Sato
Toshimasa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26347027&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69708220(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of DE69708220D1 publication Critical patent/DE69708220D1/de
Publication of DE69708220T2 publication Critical patent/DE69708220T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69708220T 1996-07-24 1997-07-22 Chemisch sensibilisierte Resistzusammensetzung Expired - Lifetime DE69708220T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19510096 1996-07-24
JP01158097A JP3665166B2 (ja) 1996-07-24 1997-01-24 化学増幅型レジスト組成物及びそれに用いる酸発生剤

Publications (2)

Publication Number Publication Date
DE69708220D1 true DE69708220D1 (de) 2001-12-20
DE69708220T2 DE69708220T2 (de) 2002-07-11

Family

ID=26347027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69708220T Expired - Lifetime DE69708220T2 (de) 1996-07-24 1997-07-22 Chemisch sensibilisierte Resistzusammensetzung

Country Status (7)

Country Link
US (2) US5976760A (de)
EP (1) EP0821274B1 (de)
JP (1) JP3665166B2 (de)
KR (1) KR100209472B1 (de)
DE (1) DE69708220T2 (de)
HK (1) HK1002463A1 (de)
TW (1) TW455745B (de)

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DE69721019T2 (de) * 1996-09-02 2003-12-24 Ciba Sc Holding Ag Alkylsulfonyloxime für i-line-photoresists hoher auflösung und empfindlichkeit
TW546151B (en) * 1997-07-23 2003-08-11 Senju Pharma Co Aqueous liquid pharmaceutical composition containing as main component benzopyran derivative
WO2000010056A1 (en) * 1998-08-14 2000-02-24 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP3974718B2 (ja) * 1998-11-09 2007-09-12 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
NL1014545C2 (nl) * 1999-03-31 2002-02-26 Ciba Sc Holding Ag Oxim-derivaten en de toepassing daarvan als latente zuren.
KR20010016972A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016970A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016971A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 중합체 및 이를 이용한 포토레지스트 조성물
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP3948646B2 (ja) * 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2002278053A (ja) * 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
KR100698444B1 (ko) 2002-03-22 2007-03-23 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 레지스트 재료용 광산 발생제, 및 이것을사용한 레지스트 재료 및 패턴 형성 방법
JP2003302753A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
TW589516B (en) * 2003-07-22 2004-06-01 Ind Tech Res Inst Positive photo resist with uniform reactivity and patterning process using the same
JP2006047940A (ja) * 2004-05-31 2006-02-16 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターンの形成方法
KR100852381B1 (ko) 2004-05-31 2008-08-14 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴의 형성 방법
JP4708113B2 (ja) * 2004-09-13 2011-06-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
US8062825B2 (en) * 2004-12-03 2011-11-22 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and resist pattern forming method
WO2006059392A1 (ja) 2004-12-03 2006-06-08 Tokyo Ohka Kogyo Co., Ltd. 化学増幅型ホトレジスト組成物、ホトレジスト層積層体、ホトレジスト組成物製造方法、ホトレジストパターンの製造方法及び接続端子の製造方法
JP4558475B2 (ja) * 2004-12-16 2010-10-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4558466B2 (ja) * 2004-12-03 2010-10-06 東京応化工業株式会社 フォトマスク製造用ポジ型レジスト組成物およびレジストパターン形成方法
JP4757532B2 (ja) * 2005-05-10 2011-08-24 東京応化工業株式会社 電子線用ポジ型レジスト組成物およびレジストパターン形成方法
WO2006120896A1 (ja) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
JP4850582B2 (ja) * 2006-05-24 2012-01-11 住友化学株式会社 着色感光性樹脂組成物、カラーフィルタ、イメージセンサおよびカメラシステム
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
JP5308657B2 (ja) * 2007-12-10 2013-10-09 東京応化工業株式会社 非イオン性感光性化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
EP2414894B1 (de) 2009-03-30 2014-02-12 Basf Se Folien zur uv-dosisanzeige
KR101389421B1 (ko) * 2013-08-26 2014-04-25 로움하이텍 주식회사 신규 기능성 산 발생제 및 이를 포함하는 포토레지스트 조성물
KR101491973B1 (ko) * 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
US11675267B2 (en) * 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

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US4123255A (en) * 1977-01-03 1978-10-31 Chevron Research Company O-sulfonyl-alpha-cyano 2,6-dihalobenzaldoximes
IT1110460B (it) * 1977-03-02 1985-12-23 Ciba Geigy Ag Prodotti che favoriscono la crescita delle piante e prodotti che proteggono le piante a base di eteri di ossime e di esteri di ossime loro preparazione e loro impiego
ATE9811T1 (de) * 1980-07-14 1984-10-15 Akzo N.V. Einen blockierten katalysator enthaltende waermehaertbare ueberzugszusammensetzung.
US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
DE3660255D1 (en) * 1985-04-12 1988-07-07 Ciba Geigy Ag Oxime sulphonates containing reactive groups
GB8608528D0 (en) * 1986-04-08 1986-05-14 Ciba Geigy Ag Production of positive images
US5019488A (en) * 1988-09-29 1991-05-28 Hoechst Celanese Corporation Method of producing an image reversal negative photoresist having a photo-labile blocked imide
KR900005226A (ko) * 1988-09-29 1990-04-13 윌리엄 비이 해리스 감광성 조성물 및 양화 상과 음화 상의 생성방법
US5216135A (en) * 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
EP0571330B1 (de) * 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3456808B2 (ja) * 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
MY117352A (en) * 1995-10-31 2004-06-30 Ciba Sc Holding Ag Oximesulfonic acid esters and the use thereof as latent sulfonic acids.
JP3587413B2 (ja) * 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤

Also Published As

Publication number Publication date
KR980010622A (ko) 1998-04-30
US6245930B1 (en) 2001-06-12
DE69708220T2 (de) 2002-07-11
HK1002463A1 (en) 1998-08-28
EP0821274A1 (de) 1998-01-28
EP0821274B1 (de) 2001-11-14
TW455745B (en) 2001-09-21
KR100209472B1 (ko) 1999-07-15
JP3665166B2 (ja) 2005-06-29
JPH1090901A (ja) 1998-04-10
US5976760A (en) 1999-11-02

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