HK1002463A1 - Chemical-sensitization resist composition - Google Patents

Chemical-sensitization resist composition

Info

Publication number
HK1002463A1
HK1002463A1 HK98101451A HK98101451A HK1002463A1 HK 1002463 A1 HK1002463 A1 HK 1002463A1 HK 98101451 A HK98101451 A HK 98101451A HK 98101451 A HK98101451 A HK 98101451A HK 1002463 A1 HK1002463 A1 HK 1002463A1
Authority
HK
Hong Kong
Prior art keywords
chemical
resist composition
sensitization resist
sensitization
composition
Prior art date
Application number
HK98101451A
Other languages
English (en)
Inventor
Katsumi Oomori
Hideo Hada
Fumitake Kaneko
Mitsuru Sato
Kazufumi Sato
Toshimasa Nakayama
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26347027&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1002463(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of HK1002463A1 publication Critical patent/HK1002463A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
HK98101451A 1996-07-24 1998-02-25 Chemical-sensitization resist composition HK1002463A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19510096 1996-07-24
JP01158097A JP3665166B2 (ja) 1996-07-24 1997-01-24 化学増幅型レジスト組成物及びそれに用いる酸発生剤

Publications (1)

Publication Number Publication Date
HK1002463A1 true HK1002463A1 (en) 1998-08-28

Family

ID=26347027

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101451A HK1002463A1 (en) 1996-07-24 1998-02-25 Chemical-sensitization resist composition

Country Status (7)

Country Link
US (2) US5976760A (xx)
EP (1) EP0821274B1 (xx)
JP (1) JP3665166B2 (xx)
KR (1) KR100209472B1 (xx)
DE (1) DE69708220T2 (xx)
HK (1) HK1002463A1 (xx)
TW (1) TW455745B (xx)

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BR9713311A (pt) * 1996-09-02 2000-02-01 Ciba Sc Holding Ag Alquisulfoniloximas para fotorresists i-linha de alta resolução de alta sensibilidade
TW546151B (en) * 1997-07-23 2003-08-11 Senju Pharma Co Aqueous liquid pharmaceutical composition containing as main component benzopyran derivative
WO2000010056A1 (en) * 1998-08-14 2000-02-24 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP3974718B2 (ja) * 1998-11-09 2007-09-12 Ａｚエレクトロニックマテリアルズ株式会社 感放射線性樹脂組成物
NL1014545C2 (nl) * 1999-03-31 2002-02-26 Ciba Sc Holding Ag Oxim-derivaten en de toepassing daarvan als latente zuren.
KR20010016972A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
KR20010016971A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 중합체 및 이를 이용한 포토레지스트 조성물
KR20010016970A (ko) * 1999-08-06 2001-03-05 박종섭 신규한 포토레지스트 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
JP3948646B2 (ja) * 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP2002278053A (ja) * 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6916591B2 (en) 2002-03-22 2005-07-12 Shin-Etsu Chemical Co., Ltd. Photoacid generators, chemically amplified resist compositions, and patterning process
JP2003302753A (ja) * 2002-04-11 2003-10-24 Matsushita Electric Ind Co Ltd パターン形成方法
TW589516B (en) * 2003-07-22 2004-06-01 Ind Tech Res Inst Positive photo resist with uniform reactivity and patterning process using the same
JP2006047940A (ja) * 2004-05-31 2006-02-16 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターンの形成方法
KR100852381B1 (ko) 2004-05-31 2008-08-14 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴의 형성 방법
JP4708113B2 (ja) 2004-09-13 2011-06-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
EP1818722A4 (en) 2004-12-03 2010-02-17 Tokyo Ohka Kogyo Co Ltd CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION, PHOTORESIST LAMINATE, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST PATTERN, AND METHOD FOR PRODUCING JUNCTION TERMINAL
KR100906598B1 (ko) * 2004-12-03 2009-07-09 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4558475B2 (ja) * 2004-12-16 2010-10-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4558466B2 (ja) * 2004-12-03 2010-10-06 東京応化工業株式会社 フォトマスク製造用ポジ型レジスト組成物およびレジストパターン形成方法
JP4757532B2 (ja) * 2005-05-10 2011-08-24 東京応化工業株式会社 電子線用ポジ型レジスト組成物およびレジストパターン形成方法
WO2006120896A1 (ja) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
JP4850582B2 (ja) * 2006-05-24 2012-01-11 住友化学株式会社 着色感光性樹脂組成物、カラーフィルタ、イメージセンサおよびカメラシステム
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
JP5308657B2 (ja) * 2007-12-10 2013-10-09 東京応化工業株式会社 非イオン性感光性化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
US20120043480A1 (en) 2009-03-30 2012-02-23 Basf Se Uv-dose indicator films
KR101389421B1 (ko) * 2013-08-26 2014-04-25 로움하이텍 주식회사 신규 기능성 산 발생제 및 이를 포함하는 포토레지스트 조성물
KR101491973B1 (ko) * 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
US11675267B2 (en) * 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

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IT1110460B (it) * 1977-03-02 1985-12-23 Ciba Geigy Ag Prodotti che favoriscono la crescita delle piante e prodotti che proteggono le piante a base di eteri di ossime e di esteri di ossime loro preparazione e loro impiego
DE3166592D1 (en) * 1980-07-14 1984-11-15 Akzo Nv Thermosetting coating composition containing a blocked acid catalyst
US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
EP0199672B1 (de) * 1985-04-12 1988-06-01 Ciba-Geigy Ag Oximsulfonate mit reaktiven Gruppen
GB8608528D0 (en) * 1986-04-08 1986-05-14 Ciba Geigy Ag Production of positive images
US5019488A (en) * 1988-09-29 1991-05-28 Hoechst Celanese Corporation Method of producing an image reversal negative photoresist having a photo-labile blocked imide
KR900005226A (ko) * 1988-09-29 1990-04-13 윌리엄 비이 해리스 감광성 조성물 및 양화 상과 음화 상의 생성방법
US5216135A (en) * 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
EP0571330B1 (de) * 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3456808B2 (ja) * 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
MY117352A (en) * 1995-10-31 2004-06-30 Ciba Sc Holding Ag Oximesulfonic acid esters and the use thereof as latent sulfonic acids.
JP3587413B2 (ja) * 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤

Also Published As

Publication number Publication date
EP0821274B1 (en) 2001-11-14
JP3665166B2 (ja) 2005-06-29
TW455745B (en) 2001-09-21
US5976760A (en) 1999-11-02
KR100209472B1 (ko) 1999-07-15
US6245930B1 (en) 2001-06-12
JPH1090901A (ja) 1998-04-10
DE69708220D1 (de) 2001-12-20
DE69708220T2 (de) 2002-07-11
EP0821274A1 (en) 1998-01-28
KR980010622A (ko) 1998-04-30

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20050722