DE69807602D1 - Resistzusammensetzungen - Google Patents

Resistzusammensetzungen

Info

Publication number
DE69807602D1
DE69807602D1 DE69807602T DE69807602T DE69807602D1 DE 69807602 D1 DE69807602 D1 DE 69807602D1 DE 69807602 T DE69807602 T DE 69807602T DE 69807602 T DE69807602 T DE 69807602T DE 69807602 D1 DE69807602 D1 DE 69807602D1
Authority
DE
Germany
Prior art keywords
resist compositions
resist
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69807602T
Other languages
English (en)
Other versions
DE69807602T2 (de
Inventor
Jun Hatakeyama
Tsunehiro Nishi
Takeshi Nagata
Shigehiro Nagura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE69807602D1 publication Critical patent/DE69807602D1/de
Application granted granted Critical
Publication of DE69807602T2 publication Critical patent/DE69807602T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
DE69807602T 1997-06-26 1998-06-26 Resistzusammensetzungen Expired - Lifetime DE69807602T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18581497 1997-06-26

Publications (2)

Publication Number Publication Date
DE69807602D1 true DE69807602D1 (de) 2002-10-10
DE69807602T2 DE69807602T2 (de) 2003-06-05

Family

ID=16177359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69807602T Expired - Lifetime DE69807602T2 (de) 1997-06-26 1998-06-26 Resistzusammensetzungen

Country Status (5)

Country Link
US (1) US6274286B1 (de)
EP (1) EP0887705B1 (de)
KR (1) KR100539641B1 (de)
DE (1) DE69807602T2 (de)
TW (1) TW526390B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6852466B2 (en) * 1998-12-23 2005-02-08 Shipley Company, L.L.C. Photoresist compositions particularly suitable for short wavelength imaging
US6638684B2 (en) * 1999-08-31 2003-10-28 Tokyo Ohka Kogyo Co., Ltd. Photosensitive laminate, process for forming resist pattern using same and positive resist composition
US6673511B1 (en) * 1999-10-29 2004-01-06 Shin-Etsu Chemical Co., Ltd. Resist composition
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6645696B1 (en) * 2001-11-30 2003-11-11 Euv Llc. Photoimageable composition
US20040166434A1 (en) 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
EP1598701A4 (de) * 2003-02-25 2009-12-09 Tokyo Ohka Kogyo Co Ltd Fotoresistzusammensetzung und verfahren zur bildung einer resiststruktur
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
JP2004334060A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US7537879B2 (en) 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP5203575B2 (ja) * 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
JP4857138B2 (ja) * 2006-03-23 2012-01-18 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
JP5071658B2 (ja) * 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
JP4703674B2 (ja) * 2008-03-14 2011-06-15 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8168367B2 (en) 2008-07-11 2012-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US20100081085A1 (en) * 2008-09-29 2010-04-01 Sumitomo Chemical Company, Limited Polymer and Resist Composition Comprising the Same
JP5593180B2 (ja) 2009-09-16 2014-09-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
US8852848B2 (en) 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
US8871425B2 (en) 2012-02-09 2014-10-28 Az Electronic Materials (Luxembourg) S.A.R.L. Low dielectric photoimageable compositions and electronic devices made therefrom
TWI717543B (zh) 2016-08-09 2021-02-01 德商馬克專利公司 光阻組合物及其用途

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149640A (ja) 1986-12-12 1988-06-22 Konica Corp 感光性組成物および感光性平版印刷版
CA2000855A1 (en) * 1988-11-17 1990-05-17 Mohammad Z. Ali Triazine photoinitiators in a ternary system for addition polymerization
JP3010607B2 (ja) 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH05289322A (ja) 1992-04-10 1993-11-05 Hitachi Ltd パタン形成材料及びそれを用いたパタン形成方法
JP3293940B2 (ja) 1993-03-12 2002-06-17 株式会社東芝 感光性組成物及びそれを用いたパターン形成方法
JPH0792678A (ja) 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JPH07120929A (ja) 1993-09-01 1995-05-12 Toshiba Corp 感光性組成物
JP3297199B2 (ja) 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
JPH07128859A (ja) 1993-11-04 1995-05-19 Wako Pure Chem Ind Ltd レジスト組成物
JP3203995B2 (ja) 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
EP0780732B1 (de) * 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymerzusammensetzung und Rezistmaterial
TW574629B (en) * 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation

Also Published As

Publication number Publication date
EP0887705B1 (de) 2002-09-04
TW526390B (en) 2003-04-01
EP0887705A1 (de) 1998-12-30
KR19990007372A (ko) 1999-01-25
DE69807602T2 (de) 2003-06-05
KR100539641B1 (ko) 2006-04-21
US6274286B1 (en) 2001-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition