CN1953154A - 半导体处理方法 - Google Patents
半导体处理方法 Download PDFInfo
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- CN1953154A CN1953154A CNA2006101317688A CN200610131768A CN1953154A CN 1953154 A CN1953154 A CN 1953154A CN A2006101317688 A CNA2006101317688 A CN A2006101317688A CN 200610131768 A CN200610131768 A CN 200610131768A CN 1953154 A CN1953154 A CN 1953154A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 239000000314 lubricant Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- 239000003381 stabilizer Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
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- 238000013519 translation Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
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Abstract
揭示了半导体处理方法和设备。所述半导体设备和处理方法提供缺陷减少的半导体晶片。
Description
技术领域
本发明涉及用来制备缺陷减少的半导体晶片的半导体晶片处理方法。更具体来说,本发明涉及半导体晶片处理方法,所述晶片处理方法可以通过在表面糙度减小的晶片固定制品中进行处理,从而提供缺陷减少的半导体晶片。
背景技术
半导体晶片处理的一个问题是晶片通常会形成被称为滑移的缺陷。滑移是当一部分单晶沿晶面相互移动时,沿这些晶面形成的分子错位。当基座(susceptor)和晶片之间未达到最佳接触的时候,会出现这种移动。通常,滑移开始于与基座表面接触的晶片的背面,在继续的处理过程中在晶片中传播。可以有许多种滑移的原因,但是基本的问题是当将晶片置于某一表面上、或者在表面上移动的时候,由于在表面上的小的接触区域(尖锐点)造成很高的局部应力。因此,很重要的是制得没有尖锐的物体或突起物的表面,以及提供圆滑的边缘。所述未达到最佳接触通常是由于用来制造基座的陶瓷材料的粗糙表面构形造成的。这种移动还会在成膜过程中,由于晶片被不均匀加热或冷却而产生,特别是在晶片的顶面和底面之间以及外部边缘处(在这些位置,热量耗散得较快)产生。然后在晶片上存在高温度梯度的区域产生热应力,当晶体的部分发生移动以释放这些应力的时候,造成滑移。具有滑移缺陷的晶片在用来制造半导体器件的时候,会造成人们所不希望出现的产率损失。
可以通过保持晶片和晶片基座之间的理想接触,非常缓慢地加热晶片,或者将晶片制成比现有常规晶片更厚或直径更小的尺寸,从而在一定程度上减少晶体滑移。然而,这些技术很难实施应用于生产环境。
Carbonaro等人在美国专利第6,099,650号中揭示了一种解决该滑移问题的尝试。Carbonaro通过在固定于化学气相沉积反应器中的基座中的晶片上放置覆盖物,从而解决了滑移的问题。根据Carbonaro的专利,该覆盖物起到热屏障的作用,将热量从基座辐射和反射到晶片上。据称这可以防止热量从晶片辐射,减小了晶片上的温度梯度,从而减少或消除了外延层形成过程中或之后晶片中的滑移。该覆盖物的形状和直径与基座相同,由具有0.6-2.54厘米厚的碳化硅涂层的石墨组成。据称通过改变厚度可以控制从覆盖物辐射的热量。该覆盖物位于晶片上方0.6-5厘米处。据称通过调节距离可以控制反射回晶片的热量。认为这可以增加晶片顶部的热量。
除了滑移以外,半导体处理的其他问题包括粘着(sticktion)和浮动(float)。粘着是指晶片粘在基座或其他晶片固定装置上。粘着很难定量测量,但是在将晶片从基座提起的时候,会定性地注意到。如果遇到对晶片造成应力破坏的粘合,则存在粘着问题。应力破坏可以通过晶片中的晶体点缺陷、线缺陷和断裂而观察到。当晶片被支承在基座表面上的少量高点上,以及当夹带的气体在基座表面和晶片之间通过,使得晶片相对于基座移动的时候,即发生浮动问题。在理想情况下,在半导体晶片处理过程中,粘着和浮动均为零,晶片在它们的固定装置中保持静止不动。因此,人们需要能够解决上述问题的改进的方法。
发明内容
在本发明一个方面,提供了一种方法,该方法包括对晶片固定制品的一个或多个表面进行改进(modify),以提供具有Ra小于或等于3微米、Rz(din)小于或等于15微米的表面的晶片固定制品;将一个或多个半导体晶片置于该晶片固定制品中;将所述装有一个或多个半导体晶片、而且具有Ra小于或等于3微米、Rz(din)小于或等于15微米的表面的晶片固定制品置于处理室内;处理所述一个或多个半导体晶片,从而对所述一个或多个晶片进行改进,形成滑移缺陷小于或等于50个的改进的半导体晶片。
在另一方面,提供了一种方法,该方法包括对晶片固定制品的一个或多个表面进行改进,以提供边缘半径等于或大于0.05毫米、Ra小于或等于3微米、Rz(din)小于或等于15微米的晶片固定制品;将一个或多个晶片置于改进的晶片固定制品中;将所述装有一个或多个半导体晶片、而且具有Ra小于或等于3微米、Rz(din)小于或等于15微米的表面的改进的晶片固定制品置于处理室内;处理所述一个或多个半导体晶片,从而对所述一个或多个半导体晶片进行改进,形成滑移缺陷小于或等于50个的改进的半导体晶片。
在另一方面,提供了一种Ra小于或等于3微米、Rz(din)小于或等于15微米的晶片固定制品。所述晶片固定制品还可具有等于或大于0.05毫米的边缘半径。
除了消除或减少滑移以外,该方法还减少或消除了粘着和浮动之间的不平衡。
附图说明
图1是基座环的部分剖面透视图;
图2是图2的基座和晶片的横截面侧视图;
图3是基座圆滑边缘的横截面侧视图;
图4是已经机械加工并精研的碳化硅表面的30倍放大照片。
具体实施方式
在此说明书中,除非另外说明,以下缩写的含义如下:℃=摄氏度;μm=微米;m=米;cm=厘米;mm=毫米;nm=纳米;A=安培;mA=毫安;CVD=化学气相沉积;PVD=物理气相沉积;ml=毫升;min=分钟;sec=秒; msec=毫秒;hr=小时;Hz=赫兹;kHz=千赫;W=瓦特=1焦耳/秒;尔格=1达因厘米=10-7焦耳;mV=毫伏;1大气压=760托;1大气压=1.01325×106达因/厘米2;psi=磅/英寸2;1大气压=14.7psi;rpm=转/分钟;=埃=1×10-4微米;RMS=均方根;SEM=扫描电子显微镜。
除非另外说明,所有的百分数均以重量为基准计。所有的数值范围均包括端值,而且可以按照任何次序进行组合,除非从逻辑上来说,这些数值范围之和等于100%。
方法包括对晶片固定制品的一个或多个表面进行改进,以提供具有Ra等于或小于3微米、Rz(din)小于或等于15微米的表面的晶片固定制品;将一个或多个半导体晶片置于晶片固定制品中;将所述装有一个或多个半导体晶片、而且具有Ra小于或等于3微米、Rz(din)小于或等于15微米的表面的晶片固定制品置于处理室内;处理所述一个或多个半导体晶片,从而对所述一个或多个晶片进行改进,形成滑移缺陷小于或等于50个的改进的半导体晶片。
除了提供减少的滑移缺陷以外,在具有Ra等于或小于3微米、Rz(din)小于或等于15微米的表面的晶片固定制品中处理半导体可以减少或消除粘着和浮动之间的不平衡。
表面糙度由细小的表面结构不规则组成,包括Ra和Rz(din)。“Ra”表示在一定的测定长度内记录的平均线的轮廓(峰)高度偏移的绝对值的算术平均值(平均糙度)。Ra等于或小于3微米,或者例如为0.1-0.001微米,或者例如为0.01-0.005微米。Rz(din)值是测量长度内任意五个连续取样长度的平均最大峰至谷高度。所述峰至谷距离是表面结构中的高度与表面中槽谷或凹谷之间的距离。“峰”是轮廓的特定部分中位于中线以上的最大高度点。“谷”是轮廓的特定部分中位于中线以下的最大深度点。Rz(din)等于或小于15微米,或者例如为1-0.005微米,或者例如为3-0.05微米。
可以使用各种方法测量表面糙度。一种合适的方法是自协方差函数。所述二维自协方差函数是方向和距离的函数,表示被一定方向上的特定长度分隔的所有两点对高度的预期值。换而言之,自协方差函数描述了特征长度,即具有特定高度的两个峰之间的长度。关于用自协方差函数测定表面构形的应用,可参见Kiely等人的Quantfication of Topographic Structure by Scanning ProbeMicroscopy,Journal of Vacuum Sceince Technology B,1997年7月/8月,第15卷,第4期,第1483-1493页。在Standard ASME B46.1-2002,
Surface texture(Surface Roughness,Wavines and Lay),American Society of Mechanical Engineers,2003中提供了对糙度参数的进一步描述以及测定这些参数值的方法。通常使用原子力显微镜(AFM)或光学轮廓曲线计测定表面特征的方向性表面构形。
所述晶片固定制品还可具有边缘半径等于或大于0.05毫米、或例如0.1-1毫米的晶片支承边缘。该半径是由圆周的四分之一测量,这是本领域常用的方法。可以使用轮廓曲线计测量半径,或者可以用显微镜测量。等于或大于0.05毫米的边缘半径也可减少或消除晶片中由于应力造成的晶体点缺陷、线缺陷和断裂。
可使用任何合适的陶瓷制备晶片固定制品。通常用来制备晶片固定制品的材料是碳化硅。碳化硅可以由许多不同的方法制得,这些方法能够制得具有不同的和截然不同的性质(例如热导率、电阻率、密度和晶体结构)的碳化硅。碳化硅可以是单晶或多晶。碳化硅包括,但不限于化学气相沉积的碳化硅、物理气相沉积的碳化硅、反应结合的碳化硅、烧结的碳化硅、热压的碳化硅和发泡的碳化硅。通常碳化硅选自CVD碳化硅、PVD碳化硅、烧结的碳化硅和热压的碳化硅。更佳的是,所述碳化硅选自CVD碳化硅和PVD碳化硅。最佳的是,所述碳化硅是CVD碳化硅。所述CVD碳化硅通常是β-立方碳化硅。
可使用任何合适的方法对陶瓷制品的表面进行改进,只要该方法能够提供所需的表面糙度和边缘半径即可。这些方法包括但不限于机械加工、精研、抛光、研磨、喷砂处理、二氧化碳喷射、蚀刻(例如用酸和碱进行湿蚀刻,或者等离子体蚀刻)、能量烧蚀之类的烧蚀、氧化、放电机械加工、直接CVD,或通过例如CVD,PVD和能量辅助的CVD和PVD法在制品上形成涂层。这些涂层包括但不限于氮化硅、硅、碳化硅、二氧化硅或碳。也可使用上述这些方法的组合提供所需的表面。通常采用精研、抛光或氧化法使碳化硅晶片固定制品的表面平整化。更佳的是,通过氧化在碳化硅上形成二氧化硅层,然后用酸进行剥离,使碳化硅晶片固定制品的表面平整化。
通常首先对所述陶瓷制品进行机械加工。通常在通过例如CVD或PVD形成陶瓷制品,并根据所需功能对这些制品进行成形之后,通过机械加工宏观地除去陶瓷制品上不希望有的表面结构。可使用常规的机械处理法。这些方法包括但不限于研磨、精研、珩磨、超声机械处理、喷水或研磨加工、激光加工、放电加工、离子束加工、电子束加工、化学机械加工和电化学加工。
可以将机械加工的方法和对表面进行平面化以提供所需Ra和Rz(din)以及所需边缘半径的方法结合起来。可以将例如湿蚀刻、精研、抛光、研磨、放电、激光烧蚀、电子束烧蚀、X射线烧蚀、微波烧蚀和辐射能烧蚀之类的表面平整化法与机械加工结合起来。当将表面粗糙化法与机械加工法结合起来的时候,可以通过最少的试验对机械加工的过程参数以及对表面粗糙化以提供所需制品的方法进行改进。
在机械加工之后进行CVD。可以通过CVD形成的陶瓷材料包括,但不限于碳化硅、氮化硅、合成金刚石、碳、硼化钛、碳化钛、碳化硼、氮化硼和氮化碳。可使用常规的沉积室和反应前体。所述沉积处理过程在氩气、氦气、氖气、氪气、氙气、氮气及其混合物之类的惰性气氛下进行。沉积过程中这些惰性气体的流速是常规流速。所述前体的沉积速率小于5微米/分钟,或者例如0.005-1微米/分钟。这些速率取决于沉积室的温度、压力和流速或前体。可以在沉积过程中调节这些参数,以获得所需的沉积速率。例如,沉积室可为1200-1700℃,或者例如1250-1600℃。沉积压力为100-400托,或例如125-350托,或例如150-250托。可采用常规的前体流速,并在沉积过程中进行改变,以获得所需的沉积速率。
能量烧蚀使用电磁波或颗粒的辐射能或束对陶瓷表面进行改进。辐射能烧蚀或热处理通常是在常规的真空室内进行。在陶瓷制品周围缓慢地产生真空。压力可为10-4至10-10托,或例如10-6至10-8托。压力保持恒定,同时使陶瓷的温度从1000℃上升至2000℃,或者例如从1200℃上升至1500℃。该陶瓷制品在恒定的温度和压力下保持2-10小时,或例如4-8小时。然后使陶瓷缓慢冷却,使其达到大气压,并从室内取出。冷却和降压在5-60分钟内,或者例如10-30分钟内进行,将陶瓷留在室内,在6-48小时内、或者例如12-24小时内冷却至室温。
电磁波或颗粒包括但不限于质子、中子、电子、X射线、激光(高强度光辐射)、放电加工(EDM)(也被称为电弧)、以及微波。用来对表面进行改进的设备通常包括用来控制特定能量束、并将其汇聚在陶瓷表面的装置。用来控制和汇聚离子/辐射束的具体装置取决于所用电磁辐射的具体种类。这些设备是本领域众所周知的。
通常,当电磁波束是由电子束、离子束或电弧产生的时候,电流流向该制品。电流为5-100毫安,或例如10-80毫安。电磁波束输送的能量可以由功率密度来定义,功率密度即为陶瓷的平均功率表面。在所述电磁波束所射向的制品的表面上的平均功率密度可为1000-5000瓦/厘米2,或例如为2000-4000瓦/厘米2。在陶瓷表面上的点的电磁波束峰值功率密度可为5000-10,000瓦/厘米2,或例如5500-8000瓦/厘米2。所述的峰值功率密度可定义为在特定功率设定下,电磁波束处于其最大聚焦(即最小光斑尺寸)时的过程设定。电磁波束的停留时间可为0.1-5毫秒,或例如0.5-2毫秒。
湿蚀刻之类的化学处理包括使用酸和碱来改进陶瓷表面。这些酸包括,但不限于酸的水溶液,例如硫酸、硝酸、盐酸、氢氟酸、磷酸、或它们的组合。所用酸的浓度为20-80重量%,或例如65-70重量%。当将两种或更多种酸混合起来的时候,通常各种酸的用量是相等的。蚀刻进行30-240分钟,或者例如60-180分钟。蚀刻在20-100℃、或例如30-85℃的温度下进行。
碱包括,但不限于氢氧化钾、氢氧化钠、氢氧化铵或它们的组合。使用这些碱的浓缩形式。通常使用熔融的碱蚀刻制品表面。用熔融碱蚀刻在500-1000℃的温度下进行。
干蚀刻或等离子体蚀刻包括产生等离子体,以激发或解离活性气体物质,这些活性气体物质与陶瓷表面上的材料反应,将这些材料除去。通过将能量传递到低压气体,从而产生等离子体放电。干蚀刻可以在1000-5000℃、或例如1500-3000℃的等离子体温度下进行。制品温度通常是100-500℃°。能量源包括,但不限于射频能、微波能和磁场。压力通常为10-310-10托,或例如10-5-10-8托。可使用各种等离子体气体和混合物。这些气体包括,但不限于氯、氟、三氟化氮、氯化氢、三氯化硼、六氟化硫、碳氟化合物、氧气或惰性气体,所述惰性气体是例如氩气、氖气、氪气、氦气和氙气。蚀刻时间可为30秒至90分钟,或例如60秒至60分钟,或例如120秒至30分钟。
通常,等离子体中,一种或多种非惰性气体(例如氯、氟、三氟化氮、氯化氢和氧气)的含量为10-50体积%,或例如15-25体积%,余量为一种或多种惰性气体。通常使用氯气、氧气以及一种或多种惰性气体的混合物进行蚀刻。更佳的是,使用氟、氧气和氩气进行蚀刻。卤素气体的含量为10-30体积%,氧气含量为10-30体积%,余量为一种或多种惰性气体。蚀刻通常进行60秒至3小时,或例如15分钟至2小时,或例如30分钟至1小时。
另一种用来对碳化硅表面进行改进的化学处理方法是氧化。将碳化硅制品置于温度为800-2000℃、或例如1000-1500℃的常规敞开式空气加热炉中。持续加热100-400小时,或例如150-250小时。为加快该过程,可以用泵向加热炉内抽入额外的氧气。或者该方法可以在封闭的加热炉内进行,在此过程中用泵向炉内送入氧气。通常封闭的加热炉内的压力为50托至1个大气压。密闭加热炉内的氧化通常进行5-30小时,或例如10-20小时。
制品上的二氧化硅层的厚度可为0.1-5微米,或例如0.3-2微米。然后使用无机酸浓溶液将二氧化硅层剥离。合适的酸包括,但不限于盐酸、硫酸、硝酸、氢氟酸、磷酸及其混合物。通常使用氢氟酸。剥离在20-90℃的温度下进行。
当除去二氧化硅的时候,所述二氧化硅所涂敷的粗糙的表面结构以及尖峰也被除去。通过除去二氧化硅层,提供了具有所需表面结构的平整表面。
可以使用常规的设备,例如各种精研设备和抛光垫进行精研和抛光。当使用精研板的时候,精研板以300-3000米/分钟、或例如600-2500米/分钟的表面速度旋转。精研和抛光在1-15psi的压力下进行,或例如进行1-10小时。
可以用浆液、糊剂和干燥颗粒进行精研和抛光。可使用各种种类和粒度的颗粒。可以在多个步骤中,使用各种粒度进行精研和抛光,以得到所需的表面糙度。
化学机械抛光可以使用化学式为AO·xZ2O3的颗粒进行,式中A是至少一种二价阳离子,Z是至少一种三价阳离子,0.01≤x≤100。阳离子包括但不限于镁、铁(II)、锌、锰、镍、钙或其混合物。Z阳离子包括但不限于铝、铁(III)、铬、钛或其混合物。这些颗粒的比表面为5-200米2/克,平均晶体直径为5-500纳米,平均聚集粒径为10-5000纳米。ζ电势可以是正的,零或负的。通常浆液的ζ电势大于或等于+10毫伏。或者小于或等于-10毫伏。所述水性浆液中的颗粒含量为0.1-10重量%。除了颗粒以外,所述浆液还可包含氧化剂和还原剂,例如羟胺化合物、过硫酸铵、过氧化氢,聚合电解质和有机酸。也可包含螯合剂和表面活性剂、稳定剂、悬浮剂、缓冲剂和润滑剂。也可包含其它的阳离子,例如但不限于锆、铜、钴、锂和稀土阳离子。
其他可用的磨粒包括但不限于金刚石、碳化硼、氮化硼、氮化碳、碳化硅、氮化硅或它们的混合物。粒度可为0.005-30微米,或例如0.05-20微米,或例如0.5-10微米。当使用金刚石糊剂的时候,粒度可等于或小于2微米,通常等于或小于1微米。浆液中这些磨粒的含量可为1-30重量%。浆液中可包含常规量的常规添加剂,例如螯合剂、缓冲剂和表面活性剂。
其它的磨料处理形式包括但不限于固定磨料研磨和喷丸处理(grit blasting),例如喷砂。固定磨料研磨通常包括使用金刚石、碳化硅以及其它莫式硬度等于或大于9的磨料。也可使用这些材料的组合。磨料可以为颗粒形式,或者为金刚石砂轮之类的砂轮的形式。砂轮的表面速度至少为1000米/分钟,或者例如2000-10,000米/分钟。颗粒在10-100psi,或例如20-80psi的压力下施用。也可使用常规的研磨设备。
当采用喷丸处理的时候,可使用常规的喷砂设备、颗粒喷射设备以及喷砂室。磨料包括但不限于金刚石、碳化硅、氮化硅、氮化硼、碳化硼或它们的组合。将磨料以10-500psi,或例如25-150psi的压力施用到制品的表面。施加这样的压力,直至获得所需的表面。
可使用涂料提供所需的表面糙度。这些涂料包括,但不限于碳化硅、硅、氮化硅、二氧化硅和碳。可通过CVD或PVD将这些涂料沉积在陶瓷制品表面上。可使用常规的反应物形成所述涂料。沉积温度和压力可根据涂料的种类变化。通常,加热炉的温度可为1000-1500℃,或例如1200-1400℃。加热炉的压力可为20-760托,或例如80-125托。涂层沉积速率可为0.01-5微米/分钟,或列如0.5-3微米/分钟。涂层厚度可为0.01-10微米,或例如0.1-5微米。
上述方法是示例性的能够形成碳化硅晶片固定制品的工艺,所述晶片固定制品可以用来处理减少了滑移、而且粘着和浮动之间的平衡获得改进的晶片。
可以在晶片固定设备中处理任意种类的半导体晶片。通常半导体晶片由包括但不限于硅、蓝宝石、砷化镓或碳化硅的材料组成。更佳的是,半导体晶片由硅组成。可以同时处理一个或多个晶片。晶片位于晶片固定设备中,使得晶片固定设备的光滑表面与晶片的5-80%的表面,或例如20-70%的表面接触,以减少滑移以及平衡粘着和浮动。另外,上述表面参数不会提供会促进滑移形成的尖锐结构。通常晶片的背面置于晶片固定制品(通常是基座环)之上。在晶片处理过程中,高温通常会使得晶片弯曲,或者在晶片未被晶片固定制品支承的中心附近形成突起的背面。尽管该弧度仅为几微米,但是这些弧度足以使得晶片与用来在其上设置晶片的晶片固定制品的边缘发生摩擦,当这些边缘很粗糙的时候,会破坏晶片。这些破坏可以是晶体点缺陷、线缺陷和断裂。为了防止或减少弯曲过程中对晶片的破坏,所述晶片固定制品边缘的边缘半径等于或大于0.05毫米。
图1、图2和图3是一种基座环的例子。如图所示,在各种制造过程中,使用基座环10来支承半导体晶片12。基座10由两个基本部件组成,即环14和阻挡件(blocker)16。所述环14是分别具有上表面18和下表面20的环形部件。环14还具有形成于内部侧壁22上的两个肩部,即晶片肩部26和阻挡件肩部28。晶片肩部26向上表面18开放,而阻挡件肩部28向晶片肩部开放。底座30和后壁36在边缘33处结合。
晶片肩部包括与环的纵轴垂直延伸的平面底座30,以及与所述纵轴共轴的管状后壁32。所述后壁32与上表面18相交。在一种类似的方式中,阻挡件肩部包括底座34和后壁36,阻挡件肩部的后壁36与底座30相交,形成边缘33。从位于边缘外周的四分之一罗经点(quarter point)“q”点测量的边缘33的半径“r”等于或大于0.05毫米。如图所示,底座用来支承晶片和阻挡件的重量,而后壁用来支承晶片的重量,从而使得这些部件可以很容易地插入环中,或者从环中取出。另外,如图2所示,底座之间间隔的距离大于阻挡件的厚度,因此在晶片底面和阻挡件顶面之间具有一定的间隔。
晶片固定器可以用于各种晶片处理法。这些方法包括但不限于分批处理室,例如,晶片高温退火,高温扩散,氮化物沉积,单晶片处理室,例如硅外延生长,化学气相沉积膜生长,晶片退火,高温扩散和等离子体蚀刻。
可以在任何合适的晶片处理室内,在晶片处理制品中以任何合适的方法对半导体晶片进行处理。这些方法包括但不限于退火、扩散和氮化物沉积、外延生长、CVD膜生长和等离子体蚀刻。这些方法改进了半导体晶片的表面,使得它们可用于电子器件。
退火的例子包括但不限于绝热增温、热流和等温加热。绝热处理包括施加10-100×10-9秒的极短时间的由脉冲能量源(例如激光、离子束、电子束)提供的能量。这种高强度、短时间的能量能够将1-2微米深的半导体表面熔化。热流包括施加5×10-6至2×10-2秒的能量。热流加热产生了在晶片表面下延伸超过2微米的显著的温度梯度,但是不会沿晶片的厚度产生任何近似的均匀加热。等温加热包括施加1-100秒的能量,使得在任意给定区域中,沿晶片厚度的温度是均匀的。
退火处理可以在常规的加热炉内进行,或者在快速热退火(RTA)系统中进行。对例如硅的快速热退火可以在任意的大量市售RTA加热炉内进行,在这些加热炉内,通过成排的高能灯对晶片进行单独加热。RTA加热炉能够在数秒内将硅晶片迅速地由室温加热至1200℃。一种这样的市售加热炉是可购自AGAssociates(美国加利福尼亚州,Mountain View)的610型加热炉。
可以通过本领域众所周知的许多不同的方法使外延层沉积在半导体晶片上或者在半导体晶片上生长。通常通过化学气相沉积使外延层生长。通常化学气相沉积包括用氢气之类的载气将SiCl4,SiHCl3,SiH2Cl2或SiH4之类的挥发性反应物引入外延反应器中。尽管处理条件可变,但是在单晶层沉积中,温度通常为1080-1150℃。另外,发生沉积的环境通常不含颗粒污染物。
可以通过热化学气相沉积在半导体晶片上形成膜。通常该过程是在单晶片沉积室内进行的。例如在沉积室内,将六氯二硅烷源气体与一氧化二氮之类的氧化源气体混合起来,以形成氧化硅膜。或者将六氯二硅烷源气体与氨气之类的氮化源气体混合起来,形成氮化硅膜。或者将六氯二硅烷源气体与一氧化二氮之类的氧化源气体以及氨气之类的氮化源气体混合起来,以形成氧氮化硅膜。膜在室内10-350托的总压力和500-800℃的温度下形成。膜以45-2000/分钟的速率沉积形成。使用六氯二硅烷形成的膜的厚度可为小于300,且大于10。
可以使用本领域已知的任何合适的方法测量改进的半导体晶片的滑移。滑移测量并不是由方法所决定的。一种用于工业中的方法是在使入射的偏振光透射过晶片之后,测量并记录下光线的消偏振效应。可以使用SIRDTM扫描红外消偏振仪之类的消偏振成像仪进行测量。另一种工业中所用的测量滑移的方法是使用静态光束技术(stationary beam technology)(SBT)进行测量,这是一种基于激光的检测技术。这可以通过使用表面检测系统,例如SurfscanSP1无图案的表面检测系统进行。
以下实施例进一步说明了本发明,但是并不意图对本发明范围构成限制。
实施例
实施例1
使用常规的研磨设备将CV碳化硅基座环机械加工至表面糙度Ra=0.8。使用接触式轮廓曲线仪测量表面糙度。机械处理通过以下步骤进行:首先用150粒度的金刚石砂轮进行处理,然后用320粒度的金刚石砂轮进行处理。以1750rpm的转速研磨9小时。拍摄了基座表面的照片。图4的上部显示了机械加工后的基座表面部分的30倍放大的照片。图4显示了通过常规的机械处理产生的特征凹槽和凸纹。
然后通过采用粒度为4-8微米的金刚石糊剂的Pellon PadTM精研垫对基座环进行精研。以600米/分钟的表面速度精研2小时。
然后拍摄基座一部分表面的照片。图4的下部显示了精研后的基座的30倍放大照片。常规机械处理所特有的凹槽和凸纹都被除去了。制得了更平整的表面。
使用接触式轮廓曲线仪测量表面糙度。测得Ra值为0.1微米,Rz(din)为1微米。所述精研法提供了Ra值低于常规机械处理法的表面。
然后将基座环置于晶片舟内,将半导体晶片置于基座环内。然后将该晶片舟置于常规的CVD加热炉内。然后将该加热炉加热至1100℃,形成惰性氩气和氢气气氛,以形成外延膜。在加热炉内对装有晶片的晶片舟加热6小时。然后将该加热炉冷却至室温,将装有基座环和晶片的晶片舟从加热炉内取出。
通过使用SurfscanSP1的静态光束技术测量滑移。测量显示没有滑移。因此,该精研法提供了防止滑移的基座。
实施例2
使用实施例1所述的常规的研磨设备和方法将CVD碳化硅基座环机械处理至表面糙度Ra=0.8微米。使用接触式轮廓曲线仪测量表面糙度。
然后通过使用粒度为4-8微米的金刚石糊剂的Pellon PadTM精研垫对基座环进行精研。以1200米/分钟的表面速度精研处理2小时。然后使用粒度为2-4微米的金刚石糊剂对基座抛光3小时。通过接触式轮廓曲线仪测量,预期Ra小于0.05微米,Rz(din)小于0.5微米。
然后将基座环置于晶片固定设备中,将半导体晶片置于基座环中。然后将该设备置于具有惰性氩气气氛的CVD加热炉内。使加热炉的温度由室温上升至1100℃。在加热炉内对该设备加热10小时。然后将加热炉冷却至室温。当晶片固定设备达到室温的时候,将其从加热炉内取出。然后将硅晶片从设备内取出,测定滑移的量。预期检测不到滑移。
实施例3
使用实施例1所述的常规研磨设备将CVD碳化硅基座环机械加工至表面糙度Ra=0.8微米。使用接触式轮廓曲线仪测量表面糙度。
然后通过使用粒度为4-8微米的金刚石糊剂的Pellon PadTM精研垫对基座环进行精研。以1500米/分钟的表面速度精研3小时。然后使用粒度0.25-1微米的金刚石糊剂对基座抛光4小时。预期Ra为0.005微米,Rz(din)为0.05微米。预期基座的边缘半径大于0.1毫米。
然后将基座置于晶片舟中。将硅半导体晶片置于基座舟中,然后将该舟置于加热炉中。对该加热炉提供惰性氩气和氢气的气氛。将加热炉加热至1200℃,舟在加热炉内保持10小时。使加热炉的温度冷却至室温。当装有基座环的舟达到室温之后,通过使用SurfscanSP1的静态光束技术测量滑移。预期未检测到滑移。
实施例4
通过与实施例1所述相同的步骤将CVD碳化硅基座环机械加工至Ra=0.8。然后将基座置入包含20%的氧气的标准热开放式空气加热炉内。使加热炉的温度升高至1000℃,将压力保持在1个大气压。在加热炉内对基座加热12小时,从而在基座表面上形成0.1微米厚的二氧化硅层。
然后将基座置于晶片舟中。将半导体晶片置于基座中,然后将舟置入惰性氩气和氢气气氛的加热炉内。将加热炉加热至1200℃。在加热炉内对舟加热10小时。然后使加热炉的温度冷却至室温。当装有基座环和晶片的舟达到室温时,通过使用SurfscanSP1的静态光束技术测量滑移。未检测到滑移。
实施例5
通过与实施例1所述相同的步骤将CVD碳化硅基座环机械加工至Ra=0.8。然后将基座环置入标准热开放式空气加热炉内,从而在环表面上形成0.8微米厚的二氧化硅层。
然后使该敞开式空气加热炉在1100℃保持200小时,从而在基座环表面上形成二氧化硅层。然后将加热炉冷却至常温。等基座环冷却之后,将其浸没在1N的盐酸溶液中30分钟,将二氧化硅层从基座上剥离。在剥离过程中,盐酸溶液的温度保持在30℃。
通过接触式轮廓曲线仪测量基座的表面糙度。测得Ra为0.1微米,Rz为1微米。
将基座环置于晶片舟中,将硅半导体晶片置于该环中。然后将该舟置于加热炉内,并加热至1050℃。该舟在加热炉内,在氩气和氢气气氛下保持5.5小时。5.5小时之后,将加热炉冷却至室温。等舟达到室温之后,将其从加热炉内移出。将晶片从舟中取出,使用SurfscanSP1无图案的表面检测系统测量滑移的量。测量显示没有可检测到的滑移。
实施例6
使用常规的机械加工设备将烧结的碳化硅基座机械加工至表面糙度Ra=1微米。所述机械加工通过与实施例1所述相同的方法进行。然后使用抛光垫和平均粒度为0.5-1微米的金刚石颗粒对基座进行抛光。以2400米/分钟的表面速度抛光5小时。
在对基座进行抛光之后,将其置于常规的电感耦合等离子体反应器中。在蚀刻过程中,将等离子体的温度保持在1400℃,压力保持在10-5托。以1000毫升/分钟的速率将氯化氢气体引入室内。蚀刻在60秒内进行。预期Ra小于0.5微米,Rz(din)小于5微米。预期边缘的半径为0.5毫米。使用光学轮廓曲线仪进行表面测量。
然后将装有硅晶片的基座置于碳化硅晶片舟内。然后在含有氢气气氛的1200℃的加热炉内对晶片退火1小时。然后在干燥氧气气氛下以1200℃对晶片退火1小时。使加热炉冷却至室温。等晶片冷却至室温之后,将其从基座中取出。预期通过SIRDTM或SurfscanSP1测量,该晶片都不会表现出任何滑移。
实施例7
使用常规的研磨设备将烧结后的碳化硅基座环机械加工至表面糙度Ra=2微米。通过与实施例1所述相同的方法进行研磨,其不同之处在于,研磨进行6小时而非9小时。
将基座置于螺旋波等离子体蚀刻反应器中。在蚀刻过程中,反应器的温度保持在1200℃,压力保持在10-5托。将氟化氮以500毫升/分钟的流速通入反应器中作为氟气体源。蚀刻进行30分钟。然后使反应器冷却至室温,然后,当基座达到室温的时候,将其从室内取出。
然后用包含50重量%的氢氟酸和50重量%的硝酸的无机酸混合物处理基座表面。将基座浸没在该酸混合物的浴中处理20秒。该溶液的温度为35℃。预期基座的Ra为0.5微米,Rz(din)为3微米。预期边缘半径为0.1毫米。
将硅晶片置于基座上。将它们置入包含氩气气氛的加热炉内,在1400℃加热10小时。使加热炉内的温度降至室温。等基座和晶片达到室温之后,将它们从加热炉内取出。预期通过SurfscanSP1和SIRDTM都不会在晶片上发现可测得的滑移。
实施例8
通过与实施例1所述相同的方法对CVD碳化硅基座环进行机械加工。然后将基座环置于螺旋波(helicon)等离子体反应器中。将氢气以50毫升/分钟的流速加入反应器中,将氯气以300毫升/分钟的流速加入反应器中。将氖气以100毫升/分钟的速率加入室内,在反应器内提供惰性气氛。将反应器的温度保持在1500℃,压力保持在10-8托。蚀刻在60分钟内进行。预期基座的Ra为0.5微米,Rz(din)为3微米。预期边缘半径为0.25毫米。
将装有硅晶片的基座置于包含氢气气氛的反应器内。该反应器的温度为1300℃。对该晶片处理3分钟。然后用65体积%的气态氯化氢蚀刻晶片的表面。反应器内的压力为2托。
在对晶片进行蚀刻之后,使用二氯化硅烷和氢气作为反应物在晶片上生长硅层。该反应混合物是60体积%的二氯化硅烷和40体积%的氢气。在硅生长过程中,使反应器的温度降低至1050℃。压力保持在2托。生长速率为0.2-0.3微米/分钟。
当晶片冷却至室温之后,将其从反应器中取出。预期使用SIRDTM或SurfscanSP1不会发现该晶片具有可测得的滑移缺陷。
实施例9
如实施例1所述将CVD碳化硅基座环机械加工并精研至表面糙度Ra=0.1微米,Rz(din)=1微米。然后将硅晶片置于环上,将晶片和环置于单晶片沉积室内。
在硅晶片上形成膜的沉积温度为800℃,室内的压力为50托。反应物是以50毫升/分钟的速率提供的氨气,以及以60毫升/分钟的速率提供的六氯化二硅烷。膜沉积速率为0.2-0.3微米/分钟。
在硅晶片上形成了氮化硅膜之后,使其在室内冷却至室温。预期使用SIRDTM或SurfscanSP1设备在晶片上都不会发现可测得的滑移。
实施例10
使用实施例1所述的常规研磨设备和方法,对进行过化学气相沉积的碳化硅基座环进行机械加工,至表面糙度Ra=0.8微米。使用接触式轮廓曲线仪测量表面糙度。
然后用400目(粒度)的碳化硅粉末对该基座环进行喷砂处理。所述碳化硅粉末在100psi的压力下,通过直径1/8英寸的碳化钨喷嘴进行喷射。对基座环的整个表面进行喷砂处理,直至表面上所有的机械加工痕迹都不再可见,而且表面具有均匀外观为止。完成整个喷砂处理操作大约需要30分钟。
使用接触式轮廓曲线仪测量表面糙度,平均糙度为Ra=1.9微米,Rz(din)=7.6微米。
然后将该基座环置于晶片舟内。将硅晶片置于基座环上,然后将该舟置于包含惰性氩气和氢气气氛的加热炉内。将该加热炉加热至1200℃。该舟在加热炉内加热10小时。然后使加热炉冷却至室温。当装有基座环和晶片的舟达到室温之后,测量滑移。使用SIRDTM或SurfscanSP1设备在晶片上都未发现可测得的滑移。
实施例11
使用实施例1所述的常规研磨设备和方法,对进行过化学气相沉积的碳化硅基座环进行机械加工,至表面糙度Ra=0.8微米。使用接触式轮廓曲线仪测量表面糙度。
然后用400目(粒度)的碳化硅粉末对该基座环进行喷砂处理。所述碳化硅粉末在100psi的压力下,通过直径1/8英寸的碳化钨喷嘴进行喷射。对基座环的整个表面进行喷砂处理,直至表面上所有的机械加工痕迹都不再可见,而且表面具有均匀外观为止。完成整个喷砂处理操作大约需要30分钟。
然后用1000目(粒度)的碳化硅粉末对该基座环进行喷砂处理。所述碳化硅粉末在120psi的压力下,通过直径1/8英寸的碳化钨喷嘴进行喷射。对基座的整个表面喷砂处理大约20分钟。
使用接触式轮廓曲线仪测量表面糙度,平均糙度为Ra=1.3微米,Rz(din)=5.5微米。
然后将该基座环置于晶片舟内。将硅晶片置于基座环上,然后将该舟置于包含惰性氩气和氢气气氛的加热炉内。将该加热炉加热至1200℃。该舟在加热炉内加热10小时。然后使加热炉冷却至室温。当装有基座环和晶片的舟达到室温之后,测量滑移。使用SIRDTM或SurfscanSP1设备在晶片上都未发现可测得的滑移。
Claims (10)
1.一种方法,该方法包括:
a)对晶片固定制品的一个或多个表面进行改进,以提供Ra小于或等于3微米、Rz(din)小于或等于15微米的晶片固定制品;
b)将一个或多个半导体晶片置于所述晶片固定制品中;
c)将装有一个或多个半导体晶片的晶片固定制品置于处理室之内;
d)对一个或多个半导体晶片进行处理,以改进所述一个或多个半导体晶片,从而形成滑移缺陷少于或等于50个的改进的半导体晶片。
2.如权利要求1所述的方法,其特征在于,所述晶片固定制品是碳化硅。
3.如权利要求2所述的方法,其特征在于,所述碳化硅选自CVD碳化硅、PVD碳化硅、反应结合的碳化硅、烧结的碳化硅、热压的碳化硅或发泡的碳化硅。
4.一种方法,该方法包括:
a)对晶片固定制品的表面进行改进,以提供边缘半径等于或大于0.05毫米、Ra小于或等于3微米、Rz(din)小于或等于15微米的晶片固定制品;
b)将一个或多个半导体晶片置于所述晶片固定制品中;
c)将装有一个或多个半导体晶片的晶片固定制品置于处理室之内;
d)对所述一个或多个半导体晶片进行处理,以改进所述一个或多个半导体晶片,从而形成滑移缺陷少于或等于50个的改进的半导体晶片。
5.如权利要求4所述的方法,其特征在于,所述晶片固定制品通过机械加工、喷射、精研、抛光、涂敷、蚀刻、烧蚀或它们的组合来进行改进。
6.如权利要求4所述的方法,其特征在于,通过在所述晶片固定制品上形成0.5-5微米厚的二氧化硅层,从而对该制品进行改进。
7.一种晶片固定制品,该制品的表面糙度Ra小于或等于3微米,Rz(din)小于或等于15微米。
8.如权利要求7所述晶片固定制品,该制品还具有等于或大于0.05毫米的边缘半径。
9.如权利要求7所述的晶片固定制品,其特征在于,所述表面具有0.5-5微米的二氧化硅涂层。
10.如权利要求7所述的方法,其特征在于,所述晶片固定制品是碳化硅。
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CN111816604A (zh) * | 2020-08-18 | 2020-10-23 | 北京智创芯源科技有限公司 | 一种晶片刻蚀方法 |
CN113910010A (zh) * | 2021-11-11 | 2022-01-11 | 哈尔滨工业大学 | 一种硬脆半导体材料的加工方法及其磨削机床 |
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US9490157B2 (en) | 2016-11-08 |
US20090194022A1 (en) | 2009-08-06 |
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KR101264395B1 (ko) | 2013-05-14 |
EP1772901A3 (en) | 2009-04-01 |
TW200729390A (en) | 2007-08-01 |
US20070084827A1 (en) | 2007-04-19 |
EP1772901B1 (en) | 2012-07-25 |
JP5183053B2 (ja) | 2013-04-17 |
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US7722441B2 (en) | 2010-05-25 |
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