CN1950548A - SiC单晶的生长方法和由该方法生长的SiC单晶 - Google Patents

SiC单晶的生长方法和由该方法生长的SiC单晶 Download PDF

Info

Publication number
CN1950548A
CN1950548A CNA2005800150544A CN200580015054A CN1950548A CN 1950548 A CN1950548 A CN 1950548A CN A2005800150544 A CNA2005800150544 A CN A2005800150544A CN 200580015054 A CN200580015054 A CN 200580015054A CN 1950548 A CN1950548 A CN 1950548A
Authority
CN
China
Prior art keywords
single crystal
sic single
growth
plane
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800150544A
Other languages
English (en)
Chinese (zh)
Inventor
木本恒畅
盐见弘
齐藤广明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Toyota Motor Corp
Original Assignee
Hexagonal Co ltd
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hexagonal Co ltd, Toyota Motor Corp filed Critical Hexagonal Co ltd
Publication of CN1950548A publication Critical patent/CN1950548A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2005800150544A 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶 Pending CN1950548A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004145179A JP4694144B2 (ja) 2004-05-14 2004-05-14 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶
JP145179/2004 2004-05-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011102726762A Division CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Publications (1)

Publication Number Publication Date
CN1950548A true CN1950548A (zh) 2007-04-18

Family

ID=34968350

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2005800150544A Pending CN1950548A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶
CN2011102726762A Pending CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011102726762A Pending CN102337587A (zh) 2004-05-14 2005-05-13 SiC单晶的生长方法和由该方法生长的SiC单晶

Country Status (6)

Country Link
US (1) US20070221119A1 (enExample)
EP (1) EP1751329B1 (enExample)
JP (1) JP4694144B2 (enExample)
CN (2) CN1950548A (enExample)
DE (1) DE602005004280T2 (enExample)
WO (1) WO2005111277A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576666A (zh) * 2009-08-28 2012-07-11 昭和电工株式会社 SiC外延晶片及其制造方法
CN102686787A (zh) * 2010-12-27 2012-09-19 住友电气工业株式会社 碳化硅衬底、半导体器件、制造碳化硅衬底的方法和制造半导体器件的方法
CN105531407A (zh) * 2013-09-13 2016-04-27 丰田自动车株式会社 SiC单晶及其制造方法
CN105658847A (zh) * 2014-02-28 2016-06-08 新日铁住金株式会社 外延碳化硅晶片的制造方法
CN109957838A (zh) * 2017-12-22 2019-07-02 昭和电工株式会社 SiC锭的制造方法
CN114342064A (zh) * 2019-08-27 2022-04-12 株式会社电装 半导体装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030565A1 (ja) * 2004-09-17 2006-03-23 Nippon Mining & Metals Co., Ltd. エピタキシャル結晶の成長方法
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
JP4978637B2 (ja) 2009-02-12 2012-07-18 株式会社デンソー 炭化珪素単結晶の製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
CN102395715A (zh) * 2010-02-05 2012-03-28 住友电气工业株式会社 制造碳化硅衬底的方法
WO2012026089A1 (ja) * 2010-08-27 2012-03-01 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子
JP2012109348A (ja) * 2010-11-16 2012-06-07 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP2014013850A (ja) * 2012-07-05 2014-01-23 Sumitomo Electric Ind Ltd 炭化珪素基板および半導体装置の製造方法、ならびに炭化珪素基板および半導体装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
WO2015005064A1 (ja) * 2013-07-09 2015-01-15 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP5884804B2 (ja) * 2013-09-26 2016-03-15 株式会社デンソー 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2015159949A1 (ja) 2014-04-18 2015-10-22 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウエハおよびその製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN108028181B (zh) 2015-10-13 2022-03-01 住友电气工业株式会社 半导体堆叠体
JP2018067736A (ja) * 2018-01-16 2018-04-26 三菱電機株式会社 炭化珪素半導体装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JPH1017399A (ja) 1996-07-04 1998-01-20 Nippon Steel Corp ６Ｈ−ＳｉＣ単結晶の成長方法
JP3854508B2 (ja) * 1999-09-07 2006-12-06 株式会社シクスオン ＳｉＣウエハ、ＳｉＣ半導体デバイス、およびＳｉＣウエハの製造方法
JP4253974B2 (ja) 1999-12-22 2009-04-15 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP4160769B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 炭化珪素単結晶インゴット及びウエハ
JP4157326B2 (ja) 2002-05-27 2008-10-01 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶インゴット及びウエハ
JP4160770B2 (ja) 2002-04-04 2008-10-08 新日本製鐵株式会社 ４ｈ型炭化珪素単結晶エピタキシャル基板
US20050160965A1 (en) 2002-04-04 2005-07-28 Nippon Steel Corporation Seed crystal of silicon carbide single crystal and method for producing ingot using same
JP2004099340A (ja) * 2002-09-05 2004-04-02 Nippon Steel Corp 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法
JP2005029459A (ja) * 2003-06-16 2005-02-03 Showa Denko Kk 炭化珪素単結晶の成長方法、炭化珪素種結晶および炭化珪素単結晶

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576666A (zh) * 2009-08-28 2012-07-11 昭和电工株式会社 SiC外延晶片及其制造方法
CN102686787A (zh) * 2010-12-27 2012-09-19 住友电气工业株式会社 碳化硅衬底、半导体器件、制造碳化硅衬底的方法和制造半导体器件的方法
CN105531407A (zh) * 2013-09-13 2016-04-27 丰田自动车株式会社 SiC单晶及其制造方法
CN105531407B (zh) * 2013-09-13 2018-06-05 丰田自动车株式会社 SiC单晶及其制造方法
CN105658847A (zh) * 2014-02-28 2016-06-08 新日铁住金株式会社 外延碳化硅晶片的制造方法
CN105658847B (zh) * 2014-02-28 2018-08-10 昭和电工株式会社 外延碳化硅晶片的制造方法
CN109957838A (zh) * 2017-12-22 2019-07-02 昭和电工株式会社 SiC锭的制造方法
US10837123B2 (en) 2017-12-22 2020-11-17 Showa Denko K.K. Method of manufacturing SiC ingot
CN109957838B (zh) * 2017-12-22 2021-06-18 昭和电工株式会社 SiC锭的制造方法
CN114342064A (zh) * 2019-08-27 2022-04-12 株式会社电装 半导体装置

Also Published As

Publication number Publication date
EP1751329B1 (en) 2008-01-09
US20070221119A1 (en) 2007-09-27
DE602005004280T2 (de) 2009-01-29
DE602005004280D1 (de) 2008-02-21
WO2005111277A1 (en) 2005-11-24
EP1751329A1 (en) 2007-02-14
JP4694144B2 (ja) 2011-06-08
JP2005324994A (ja) 2005-11-24
CN102337587A (zh) 2012-02-01

Similar Documents

Publication Publication Date Title
CN1950548A (zh) SiC单晶的生长方法和由该方法生长的SiC单晶
CN1324168C (zh) SiC结晶的制造方法以及SiC结晶
CN102301043B (zh) 外延碳化硅单晶基板及其制造方法
JP4646752B2 (ja) 高配向ダイヤモンド膜及びその製造方法並びに高配向ダイヤモンド膜を備えた電子デバイス
CN1069935C (zh) 减少碳化硅外延生长中微管缺陷形成的方法和所得到的碳化硅结构
CN1164417C (zh) 在沿<1100>方向切割的基片上生长的碳化硅外延层
KR101478331B1 (ko) 에피택셜 탄화규소 단결정 기판의 제조 방법
CN1148810C (zh) 氮化镓单晶衬底及其制造方法
JP5632360B2 (ja) 低角度で軸を離れた炭化ケイ素基板上でのエピタキシャル成長、及び、それによって作られた半導体素子
CN104995718B (zh) SiC外延晶片的制造方法
CN101061262A (zh) 低1c螺旋位错3英寸碳化硅晶片
CN110192266A (zh) SiC外延晶片及其制造方法
CN104704150B (zh) 碳化硅单晶基板及其制法
CN1447448A (zh) 基于ⅲ族氮化物的半导体基片及其制造方法
CN1960014A (zh) 氮化物系半导体衬底及其制造方法
WO2012144614A1 (ja) エピタキシャル炭化珪素単結晶基板及びその製造方法
TW201202490A (en) Method for producing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate produced by the same
JP3750622B2 (ja) エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
CN108369901B (zh) SiC外延晶片的制造方法
JP3776374B2 (ja) ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法
CN101052754A (zh) 碳化硅衬底的表面重建方法
JP3628079B2 (ja) 炭化珪素薄膜製造方法並びに炭化珪素薄膜および積層基板
JP2006062931A (ja) サファイア基板とその熱処理方法、及び結晶成長方法
JP2002255692A (ja) 炭化珪素エピタキシャル基板およびその製造方法
CN1922716A (zh) 气相生长方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20080704

Address after: Aichi Prefecture, Japan

Applicant after: Toyota Motor Corp.

Co-applicant after: SUMITOMO ELECTRIC INDUSTRIES, Ltd.

Address before: Aichi Prefecture, Japan

Applicant before: Toyota Motor Corp.

Co-applicant before: Hexagonal Co.,Ltd.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20070418