CN114342064A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN114342064A
CN114342064A CN202080060210.3A CN202080060210A CN114342064A CN 114342064 A CN114342064 A CN 114342064A CN 202080060210 A CN202080060210 A CN 202080060210A CN 114342064 A CN114342064 A CN 114342064A
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active region
current sensing
semiconductor device
semiconductor substrate
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上原准市
加藤武宽
三角忠司
山下侑佑
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Denso Corp
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Abstract

半导体装置具备半导体衬底，该半导体衬底具有形成有主开关元件构造的有源区域、形成有感测开关元件构造的电流感测区域、以及位于上述有源区域和上述电流感测区域的周围的周边区域。上述半导体衬底是在<11－20>方向上具有偏离角的4H－SiC衬底。上述电流感测区域在沿着<1－100>方向观察时配置在不存在上述有源区域的范围中。

Description

半导体装置
(关联申请的相互参照)
本申请是2019年8月27日申请的日本专利申请即特愿2019－154890的关联申请，基于该日本申请主张优先权，本说明书通过引用而包含其全部内容。
技术领域
本发明涉及半导体装置。
背景技术
使用SiC衬底制造的半导体装置的开发正在进行。这种半导体装置的SiC衬底具有形成有主开关元件构造的有源区域、形成有感测开关元件构造的电流感测区域、以及位于有源区域和电流感测区域的周围的周边区域。电流感测区域以有源区域的例如1000分之1的面积比构成。在这种半导体装置中，构成为：检测流过电流感测区域的电流，将该检测到的电流用基于面积比的感测比进行换算，由此监测流过有源区域的电流。在日本特开2017－79324号公报中，公开了这种半导体装置的一例。
发明内容
发明要解决的课题
在使这种半导体装置动作的情况下，有作为层叠缺陷的一种的带状缺陷在SiC衬底内生长的情况。若这样的带状缺陷在有源区域内或电流感测区域内生长，则会使该区域的导通电阻增加。如上述那样，电流感测区域以比较小的面积构成。因此，若在电流感测区域内生长带状缺陷，则电流感测区域的导通电阻较大地变动，流过电流感测区域的电流较大地变动。由此，流过有源区域的电流与流过电流感测区域的电流的感测比较大地变动，不再能够正确地监测流过有源区域的电流。
关于使用SiC衬底制造的半导体装置，本说明书提供能够维持正确的电流监测功能的半导体装置。
用来解决课题的手段
本说明书公开的半导体装置能够具备半导体衬底，该半导体衬底具有形成有主开关元件构造的有源区域、形成有感测开关元件构造的电流感测区域、以及位于上述有源区域和上述电流感测区域的周围的周边区域。上述半导体衬底是在<11－20>方向上具有偏离角的4H－SiC衬底。上述电流感测区域在沿着<1－100>方向观察时配置在不存在上述有源区域的范围中。
当上述半导体装置动作时，以上述有源区域内的一部分为起点形成带状缺陷，该带状缺陷沿着<1－100>方向生长。在上述半导体装置中，上述电流感测区域在沿着<1－100>方向观察时配置在不存在上述有源区域的范围中。因此，抑制了从上述有源区域内沿着<1－100>方向生长的带状缺陷在上述电流感测区域内生长的情况。因此，在上述半导体装置中，即使在上述半导体衬底内生长带状缺陷，也能抑制流过上述有源区域的电流与流过上述电流感测区域的电流的感测比的变动。上述半导体装置能够维持正确的电流监测功能。
附图说明
图1示意地表示本实施方式的半导体装置的平面图。
图2示意地表示本实施方式的半导体装置的主要部分剖视图，是与图1的II－II线对应的剖面。
图3示意地表示本实施方式的半导体装置的主要部分剖视图，是与图1的III－III线对应的剖面。
图4示意地表示本实施方式的半导体装置的平面图，是将形成的带状缺陷重叠表示的图。
图5示意地表示本实施方式的变形例的半导体装置的平面图。
具体实施方式
以下，参照附图说明本实施方式的半导体装置。以下参照的附图为了使图示清楚而相对于实际的半导体装置而言变更了比例。此外，需要注意的是，附图间的比例也根据需要而进行了变更。
在图1中示意地表示本实施方式的半导体装置1的平面图。半导体装置1使用半导体衬底10制造。半导体衬底10是表面为(0001)面的4H－SiC衬底，在<11－20>方向上具有偏离角(off-angle)。
半导体衬底10具有有源区域10A、电流感测区域10B以及位于有源区域10A和电流感测区域10B的周围的周边区域10C。在该例中，有源区域10A具有一对矩形状的部分区域，将一个部分区域(图示左侧的部分区域)称作第1有源区域10Aa，将另一个部分区域(图示右侧的部分区域)称作第2有源区域10Ab。
在半导体衬底10的有源区域10A中，如后述那样，形成有构成MOSFET(Metal－Oxide－Semiconductor Field－Effect Transistor)的主开关元件构造。在半导体衬底10的电流感测区域10B中也形成有构成MOSFET的感测开关元件构造。主开关元件构造和感测开关元件构造的单位单元是通用的。在半导体衬底10的周边区域10C内，形成有保护环等周边耐压构造。进而，在半导体衬底10的周边区域10C上，设有温度感测元件40和多种小信号焊盘50。
在图2中示意地表示与图1的II－II线对应的剖视图。在图3中示意地表示与图1的III－III线对应的剖视图。如图2及图3所示，在有源区域10A和电流感测区域10B中分别形成的MOSFET具备漏极电极22、源极电极24和沟槽栅极部30。
漏极电极22设在半导体衬底10的背面上。源极电极24设在半导体衬底10中的有源区域10A及电流感测区域10B上。沟槽栅极部30设在半导体衬底10中的有源区域10A及电流感测区域10B的表层部，具有栅极电极32及栅极绝缘膜34。栅极电极32利用栅极绝缘膜34而与半导体衬底10绝缘。
在半导体衬底10中，形成有n+型的漏极区域11、n型的漂移区域12、p型的体(body)区域13、p+型的体接触区域14、n+型的源极区域15和p型的深区域16。
漏极区域11设在半导体衬底10的背层部，配置于在半导体衬底10的背面露出的位置。漏极区域11是用来使漂移区域12外延生长的基底衬底。漏极区域11与将半导体衬底10的背面覆盖的漏极电极22欧姆接触。
漂移区域12设在漏极区域11上，将漏极区域11和体区域13分隔。漂移区域12利用外延生长技术从漏极区域11的表面结晶生长而形成。
体区域13设在与有源区域10A及电流感测区域10B对应的位置的漂移区域12上，配置在半导体衬底10的表层部。体区域13利用离子注入技术朝向半导体衬底10的表面将铝进行离子注入而形成在半导体衬底10的表层部。
体接触区域14设在体区域13上，位于半导体衬底10的表层部，配置于在半导体衬底10的表面露出的位置。体接触区域14是与体区域13相比p型杂质的浓度较高的区域，与源极电极24欧姆接触。由此，体区域13经由体接触区域14而与源极电极24电连接。体接触区域14利用离子注入技术朝向半导体衬底10的表面将铝进行离子注入而形成在半导体衬底10的表层部。
源极区域15设在体区域13上，位于半导体衬底10的表层部，配置于在半导体衬底10的表面露出的位置。源极区域15被体区域13从漂移区域12分隔并与沟槽栅极部30的侧面相接。源极区域15与源极电极24欧姆接触。源极区域15利用离子注入技术朝向半导体衬底10的表面将氮进行离子注入而形成在半导体衬底10的表层部。
深区域16与体区域13邻接而设置，位于半导体衬底10的表层部，配置于在半导体衬底10的表面露出的位置。深区域16沿着有源区域10A和周边区域10C的边界以及电流感测区域10B和周边区域10C的边界而形成。深区域16形成得比体区域13深。深区域16利用离子注入技术朝向半导体衬底10的表面将硼进行离子注入而形成在半导体衬底10的表层部。
这样，在有源区域10A和电流感测区域10B中分别形成有单位单元通用的MOSFET。电流感测区域10B以有源区域10A的例如1000分之1的面积比构成。在半导体装置1中，构成为：检测流过电流感测区域10B的电流，将该检测到的电流用基于面积比的感测比进行换算，由此监测流过有源区域10A的电流。
这里，在半导体衬底10的周边区域10C的表层部，形成有保护环构造或降低表面电场(RESURF)构造等周边耐压构造，但在图2及图3中，为了图示的清楚，省略了这样的周边耐压构造而进行图示。
如图3所示，温度感测元件40设在半导体衬底的周边区域10C上，利用在半导体衬底10上的层间绝缘膜上成膜的多晶硅层构成。温度感测元件40具有p型的阳极区域42和n型的阴极区域44，是该阳极区域42与阴极区域44邻接而构成的二极管元件。温度感测元件40利用离子注入技术，向多晶硅层将p型杂质和n型杂质进行离子注入而形成。温度感测元件40利用依赖于温度变化而正向电压变化的特性来检测温度。另外，在该例中，温度感测元件40设在半导体衬底10上，但也可以代替该例而设在半导体衬底10内。
回到图1。在半导体装置1中，电流感测区域10B在沿着<1－100>方向观察时配置在不存在有源区域10A的范围中。更具体地讲，电流感测区域10B在沿着<1－100>方向观察时配置在第1有源区域10Aa与第2有源区域10Ab之间。此外，电流感测区域10B配置在小信号焊盘50间。更具体地讲，电流感测区域10B在<11－20>方向上配置在小信号焊盘50间。
此外，在半导体装置1中，温度感测元件40配置在位于第1有源区域10Aa与第2有源区域10Ab之间的周边区域10C中。这样，温度感测元件40和电流感测区域10B以在<1－100>方向上对置的方式配置。
接着，参照图4说明半导体装置1的特征。如上述那样，半导体装置1从作为基底衬底的漏极区域11的表面将漂移区域12外延生长而形成。因此，如周知的那样，在漏极区域11和漂移区域12的界面附近，存在基面位错(Basal Plane Dislocation：BPD)以及从基面位错变换来的刃位错(Threading Edge Dislocation：TED)。
在半导体装置1的开关动作中，发生源极电极24的电位变得比漏极电极22的电位高的反偏模式。在这样的反偏模式下，由于由体区域13和漂移区域12构成的内置pn二极管正偏，所以内置pn二极管能够作为续流二极管进行动作。由此，在反偏模式下，从体区域13向漂移区域12注入空穴。此时，若被注入的空穴达到基面位错或刃位错，则以这些位错为起点的层叠缺陷扩展，在半导体衬底10内出现带状缺陷100。这样的带状缺陷100沿着<1－100>方向生长，其宽度有达到200μm左右的情况。
如上述那样，这样的带状缺陷100由于通过内置pn二极管的动作而注入的空穴达到基面位错或刃位错而形成。因此，这样的带状缺陷100以存在于有源区域10A中的基面位错或刃位错为起点而形成，沿着<1－100>方向生长。
在半导体装置1中，电流感测区域10B在沿着<1－100>方向观察时配置在不存在有源区域10A的范围中。因此，在半导体装置1中，抑制了从有源区域10A生长的带状缺陷100穿过电流感测区域10B的情况。
假如带状缺陷100在电流感测区域10B内生长，则会使电流感测区域10B的导通电阻增加。如上述那样，电流感测区域10B以比较小的面积构成。因此，如果在电流感测区域10B内带状缺陷100生长，则电流感测区域10B的导通电阻较大地变动，流过电流感测区域10B的电流较大地变动。由此，流过有源区域10A的电流与流过电流感测区域10B的电流的感测比较大地变动，不再能够正确地监测流过有源区域10A的电流。
另一方面，在半导体装置1中，如上述那样，抑制了带状缺陷100在电流感测区域10B内的生长。虽然在有源区域10A内形成带状缺陷100，但由于有源区域10A以比较大的面积构成，所以导通电阻的变动较小。因此，在半导体装置1中，即使在半导体衬底10内形成带状缺陷100，也抑制了流过有源区域10A的电流与流过电流感测区域10B的电流的感测比的变动。因而，半导体装置1能够维持正确的电流监测功能。
此外，在半导体装置1中，电流感测区域10B在沿着<1－100>方向观察时配置在第1有源区域10Aa与第2有源区域10Ab之间。第1有源区域10Aa与第2有源区域10Ab之间的周边区域10C是为了配设与栅极电极32连接的布线及与温度感测元件40连接的布线等而应确保的区域。进而，在半导体装置1中，在第1有源区域10Aa与第2有源区域10Ab之间的周边区域10C中设有温度感测元件40。即，以配置各种布线及温度感测元件40为目的而将电流感测区域10B与不形成有源区域10A的区域对应而配置。因而，在半导体装置1中，能够不减小有源区域10A的面积地沿着<1－100>方向以不存在有源区域10A的位置关系配置电流感测区域10B。
另外，在上述实施方式中，例示了有源区域10A由一对部分区域即第1有源区域10Aa和第2有源区域10Ab构成的情况。如图5所示，构成有源区域10A的部分区域的数量也可以是3个。在该情况下电流感测区域10B也在沿着<1－100>方向观察时配置在有源区域10A的部分区域之间。另外，构成有源区域10A的部分区域的数量为4个以上时也是同样的。此外，电流感测区域10B和温度感测元件40既可以以在<1－100>方向上对置的方式配置，也可以不以在<1－100>方向上对置的方式配置。
以上，对实施方式详细地进行了说明，但这些只不过是例示，不限定权利要求的范围。权利要求所记载的技术包括将以上例示的具体例各种各样地变形、变更后的形态。在本说明书或附图中说明的技术要素是通过单独或各种组合来发挥技术实用性的，并不限定于在申请时权利要求中记载的组合。此外，本说明书或附图中例示的技术同时达成多个目的，而达成其中1个目的本身就具有技术实用性。

Claims (3)

1.一种半导体装置，其特征在于，
具备半导体衬底，该半导体衬底具有形成有主开关元件构造的有源区域、形成有感测开关元件构造的电流感测区域、以及位于上述有源区域和上述电流感测区域的周围的周边区域；
上述半导体衬底是在<11－20>方向上具有偏离角的4H－SiC衬底；
上述电流感测区域在沿着<1－100>方向观察时配置在不存在上述有源区域的范围中。
2.如权利要求1所述的半导体装置，其特征在于，
上述有源区域具有第1有源区域和第2有源区域；
上述第1有源区域和上述第2有源区域在上述半导体衬底内离开而配置；
上述电流感测区域在沿着<1－100>方向观察时配置在上述第1有源区域与上述第2有源区域之间。
3.如权利要求2所述的半导体装置，其特征在于，
还具备温度感测元件；
上述温度感测元件配置在位于上述第1有源区域与上述第2有源区域之间的上述周边区域中。
CN202080060210.3A 2019-08-27 2020-03-18 半导体装置 Pending CN114342064A (zh)

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