JP2021034616A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021034616A JP2021034616A JP2019154890A JP2019154890A JP2021034616A JP 2021034616 A JP2021034616 A JP 2021034616A JP 2019154890 A JP2019154890 A JP 2019154890A JP 2019154890 A JP2019154890 A JP 2019154890A JP 2021034616 A JP2021034616 A JP 2021034616A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 230000036413 temperature sense Effects 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 description 20
- 210000000746 body region Anatomy 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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Abstract
Description
10 :半導体基板
10A :アクティブ領域
10Aa :第1アクティブ領域
10Ab :第2アクティブ領域
10B :周辺領域
10C :電流センス領域
11 :ドレイン領域
12 :ドリフト領域
13 :ボディ領域
14 :ボディコンタクト領域
15 :ソース領域
16 :ディープ領域
22 :ドレイン電極
24 :ソース電極
30 :トレンチゲート部
32 :ゲート電極
34 :ゲート絶縁膜
40 :温度センス素子
42 :アノード領域
44 :カソード領域
50 :小信号パッド
Claims (3)
- 半導体装置であって、
メインスイッチング素子構造が形成されているアクティブ領域と、センススイッチング素子構造が形成されている電流センス領域と、前記アクティブ領域と前記電流センス領域の周囲に位置する周辺領域と、を有している半導体基板、を備えており、
前記半導体基板は、<11−20>方向にオフ角を有する4H−SiC基板であり、
前記電流センス領域は、<1−100>方向に沿って見たときに、前記アクティブ領域が存在しない範囲に配置されている、半導体装置。 - 前記アクティブ領域は、第1アクティブ領域と第2アクティブ領域を有しており、
前記第1アクティブ領域と前記第2アクティブ領域は、前記半導体基板内で離間して配置されており、
前記電流センス領域は、<1−100>方向に沿って見たときに、前記第1アクティブ領域と前記第2アクティブ領域の間に配置されている、請求項1に記載の半導体装置。 - 温度センス素子をさらに備えており、
前記温度センス素子は、前記第1アクティブ領域と前記第2アクティブ領域の間に位置する前記周辺領域に配置されている、請求項2に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019154890A JP7167881B2 (ja) | 2019-08-27 | 2019-08-27 | 半導体装置 |
PCT/JP2020/012110 WO2021038938A1 (ja) | 2019-08-27 | 2020-03-18 | 半導体装置 |
CN202080060210.3A CN114342064A (zh) | 2019-08-27 | 2020-03-18 | 半导体装置 |
US17/678,105 US20220181448A1 (en) | 2019-08-27 | 2022-02-23 | Semiconductor device |
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JP2019154890A JP7167881B2 (ja) | 2019-08-27 | 2019-08-27 | 半導体装置 |
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JP2021034616A true JP2021034616A (ja) | 2021-03-01 |
JP2021034616A5 JP2021034616A5 (ja) | 2021-08-19 |
JP7167881B2 JP7167881B2 (ja) | 2022-11-09 |
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JP (1) | JP7167881B2 (ja) |
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WO (1) | WO2021038938A1 (ja) |
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JP2017079324A (ja) * | 2015-10-19 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018121020A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2018142653A (ja) * | 2017-02-28 | 2018-09-13 | 株式会社日立製作所 | 半導体装置及びその製造方法、電力変換装置 |
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2019
- 2019-08-27 JP JP2019154890A patent/JP7167881B2/ja active Active
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2020
- 2020-03-18 CN CN202080060210.3A patent/CN114342064A/zh active Pending
- 2020-03-18 WO PCT/JP2020/012110 patent/WO2021038938A1/ja active Application Filing
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- 2022-02-23 US US17/678,105 patent/US20220181448A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017079324A (ja) * | 2015-10-19 | 2017-04-27 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018121020A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2018142653A (ja) * | 2017-02-28 | 2018-09-13 | 株式会社日立製作所 | 半導体装置及びその製造方法、電力変換装置 |
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US20220181448A1 (en) | 2022-06-09 |
JP7167881B2 (ja) | 2022-11-09 |
CN114342064A (zh) | 2022-04-12 |
WO2021038938A1 (ja) | 2021-03-04 |
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