CN1930676B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1930676B
CN1930676B CN200580007544XA CN200580007544A CN1930676B CN 1930676 B CN1930676 B CN 1930676B CN 200580007544X A CN200580007544X A CN 200580007544XA CN 200580007544 A CN200580007544 A CN 200580007544A CN 1930676 B CN1930676 B CN 1930676B
Authority
CN
China
Prior art keywords
power supply
pad
terminal
esd protection
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200580007544XA
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English (en)
Chinese (zh)
Other versions
CN1930676A (zh
Inventor
加藤工
原英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN1930676A publication Critical patent/CN1930676A/zh
Application granted granted Critical
Publication of CN1930676B publication Critical patent/CN1930676B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Semiconductor Integrated Circuits (AREA)
CN200580007544XA 2004-03-12 2005-03-11 半导体装置 Expired - Fee Related CN1930676B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004070380 2004-03-12
JP070380/2004 2004-03-12
PCT/JP2005/004337 WO2005088701A1 (ja) 2004-03-12 2005-03-11 半導体装置

Publications (2)

Publication Number Publication Date
CN1930676A CN1930676A (zh) 2007-03-14
CN1930676B true CN1930676B (zh) 2010-06-16

Family

ID=34975862

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580007544XA Expired - Fee Related CN1930676B (zh) 2004-03-12 2005-03-11 半导体装置

Country Status (6)

Country Link
US (1) US20070158817A1 (enExample)
JP (1) JP4978998B2 (enExample)
KR (1) KR20060127190A (enExample)
CN (1) CN1930676B (enExample)
TW (1) TW200535963A (enExample)
WO (1) WO2005088701A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010103274A (ja) * 2008-10-23 2010-05-06 Nec Electronics Corp 半導体パッケージ
JP5071465B2 (ja) * 2009-11-11 2012-11-14 株式会社村田製作所 高周波モジュール
JP5703103B2 (ja) * 2011-04-13 2015-04-15 株式会社東芝 半導体装置及びｄｃ−ｄｃコンバータ
JP6266444B2 (ja) 2014-06-20 2018-01-24 ザインエレクトロニクス株式会社 半導体装置
JP6514949B2 (ja) * 2015-04-23 2019-05-15 日立オートモティブシステムズ株式会社 オンチップノイズ保護回路を有する半導体チップ
CN105977938B (zh) 2016-06-17 2018-09-25 中国电子科技集团公司第二十四研究所 芯片esd保护电路
KR102866504B1 (ko) * 2019-05-20 2025-10-01 삼성디스플레이 주식회사 표시 장치 및 그것을 포함하는 전자 장치
CN117546281A (zh) * 2021-07-16 2024-02-09 罗姆股份有限公司 I/o电路、半导体装置、单元库和设计半导体装置的电路的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1133105A (zh) * 1993-10-15 1996-10-09 英特尔公司 静电放电保护电路
CN1175795A (zh) * 1996-09-03 1998-03-11 摩托罗拉公司 用于集成电路的非击穿触发静电放电保护电路及其方法
US6303445B1 (en) * 1998-10-01 2001-10-16 Micron Technology, Inc. Method of ESD protection scheme
US6355960B1 (en) * 2000-09-18 2002-03-12 Vanguard International Semiconductor Corporation ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
JP2616721B2 (ja) * 1994-11-22 1997-06-04 日本電気株式会社 半導体集積回路装置
JP2870514B2 (ja) * 1996-12-16 1999-03-17 日本電気株式会社 半導体装置
US6078068A (en) * 1998-07-15 2000-06-20 Adaptec, Inc. Electrostatic discharge protection bus/die edge seal
US6445039B1 (en) * 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
JP2000208718A (ja) * 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd 半導体装置
JP3302665B2 (ja) * 1999-10-25 2002-07-15 ローム株式会社 半導体集積回路装置
US6624998B2 (en) * 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
JP2001298157A (ja) * 2000-04-14 2001-10-26 Nec Corp 保護回路及びこれを搭載した半導体集積回路
JP2002110919A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 静電破壊保護回路
TWI222208B (en) * 2002-05-29 2004-10-11 Sanyo Electric Co Semiconductor integrated circuit device
US6798022B1 (en) * 2003-03-11 2004-09-28 Oki Electric Industry Co., Ltd. Semiconductor device with improved protection from electrostatic discharge
JP3732834B2 (ja) * 2003-04-17 2006-01-11 株式会社東芝 入力保護回路
JP3949647B2 (ja) * 2003-12-04 2007-07-25 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
US7202114B2 (en) * 2004-01-13 2007-04-10 Intersil Americas Inc. On-chip structure for electrostatic discharge (ESD) protection
JP2005317830A (ja) * 2004-04-30 2005-11-10 Elpida Memory Inc 半導体装置、マルチチップパッケージ、およびワイヤボンディング方法
JP2006303110A (ja) * 2005-04-19 2006-11-02 Nec Electronics Corp 半導体装置
US7463466B2 (en) * 2005-10-24 2008-12-09 United Microelectronics Corp. Integrated circuit with ESD protection circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1133105A (zh) * 1993-10-15 1996-10-09 英特尔公司 静电放电保护电路
CN1175795A (zh) * 1996-09-03 1998-03-11 摩托罗拉公司 用于集成电路的非击穿触发静电放电保护电路及其方法
US6303445B1 (en) * 1998-10-01 2001-10-16 Micron Technology, Inc. Method of ESD protection scheme
US6355960B1 (en) * 2000-09-18 2002-03-12 Vanguard International Semiconductor Corporation ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2002-110919A 2002.04.12

Also Published As

Publication number Publication date
JP4978998B2 (ja) 2012-07-18
CN1930676A (zh) 2007-03-14
WO2005088701A1 (ja) 2005-09-22
JPWO2005088701A1 (ja) 2008-01-31
KR20060127190A (ko) 2006-12-11
US20070158817A1 (en) 2007-07-12
TWI355016B (enExample) 2011-12-21
TW200535963A (en) 2005-11-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100616

Termination date: 20170311

CF01 Termination of patent right due to non-payment of annual fee