CN1870221A - 用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 - Google Patents
用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 Download PDFInfo
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- CN1870221A CN1870221A CNA2006100912794A CN200610091279A CN1870221A CN 1870221 A CN1870221 A CN 1870221A CN A2006100912794 A CNA2006100912794 A CN A2006100912794A CN 200610091279 A CN200610091279 A CN 200610091279A CN 1870221 A CN1870221 A CN 1870221A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Lasers (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP265854/2001 | 2001-09-03 | ||
JP2001265854A JP3785970B2 (ja) | 2001-09-03 | 2001-09-03 | Iii族窒化物半導体素子の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB02132249XA Division CN1268046C (zh) | 2001-09-03 | 2002-09-03 | 用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 |
Publications (2)
Publication Number | Publication Date |
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CN1870221A true CN1870221A (zh) | 2006-11-29 |
CN100466172C CN100466172C (zh) | 2009-03-04 |
Family
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CNB02132249XA Expired - Fee Related CN1268046C (zh) | 2001-09-03 | 2002-09-03 | 用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 |
CNB2006100912794A Expired - Fee Related CN100466172C (zh) | 2001-09-03 | 2002-09-03 | 用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 |
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CNB02132249XA Expired - Fee Related CN1268046C (zh) | 2001-09-03 | 2002-09-03 | 用于形成第ⅲ主族氮化物半导体层的方法以及半导体器件 |
Country Status (3)
Country | Link |
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US (2) | US6841410B2 (zh) |
JP (1) | JP3785970B2 (zh) |
CN (2) | CN1268046C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102870196A (zh) * | 2010-06-08 | 2013-01-09 | 日本碍子株式会社 | 外延基板以及外延基板的制造方法 |
CN103367115A (zh) * | 2007-12-28 | 2013-10-23 | 住友化学株式会社 | 半导体基板、半导体基板的制造方法及电子器件 |
CN104380546A (zh) * | 2012-07-06 | 2015-02-25 | 松下知识产权经营株式会社 | 半导体发光元件 |
CN112951909A (zh) * | 2020-04-30 | 2021-06-11 | 英诺赛科(苏州)半导体有限公司 | 半导体器件 |
Families Citing this family (196)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3622200B2 (ja) * | 2001-07-02 | 2005-02-23 | ソニー株式会社 | 窒化物半導体の製造方法および半導体素子の製造方法 |
EP1294016A1 (en) * | 2001-09-18 | 2003-03-19 | Paul Scherrer Institut | Formation of self-organized stacked islands for self-aligned contacts of low dimensional structures |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
JP4015865B2 (ja) * | 2002-03-22 | 2007-11-28 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US20100248499A1 (en) * | 2009-01-16 | 2010-09-30 | Zimmerman Scott M | Enhanced efficiency growth processes based on rapid thermal processing of gallium nitride films |
US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
US7524691B2 (en) * | 2003-01-20 | 2009-04-28 | Panasonic Corporation | Method of manufacturing group III nitride substrate |
US7176115B2 (en) * | 2003-03-20 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride substrate and semiconductor device |
JP4469139B2 (ja) * | 2003-04-28 | 2010-05-26 | シャープ株式会社 | 化合物半導体fet |
US7309534B2 (en) * | 2003-05-29 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same |
JP4534435B2 (ja) * | 2003-06-27 | 2010-09-01 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
JP4534444B2 (ja) * | 2003-07-10 | 2010-09-01 | 日亜化学工業株式会社 | 窒化物半導体レーザ及びその製造方法 |
US7255742B2 (en) * | 2003-07-02 | 2007-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device |
US7288152B2 (en) * | 2003-08-29 | 2007-10-30 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same |
US7227172B2 (en) | 2003-10-20 | 2007-06-05 | Matsushita Electric Industrial Co., Ltd. | Group-III-element nitride crystal semiconductor device |
JP4869564B2 (ja) * | 2003-11-28 | 2012-02-08 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
US7649215B2 (en) * | 2003-12-05 | 2010-01-19 | International Rectifier Corporation | III-nitride device passivation and method |
DE102004002757A1 (de) * | 2004-01-20 | 2005-08-11 | U-L-M Photonics Gmbh | Aluminiumhaltiger Verbundhalbleiter und Verfahren zur Herstellung eines aluminiumhaltigen Verbundhalbleiters |
JP2005244207A (ja) * | 2004-01-30 | 2005-09-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP4889203B2 (ja) * | 2004-04-21 | 2012-03-07 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
JP4869563B2 (ja) * | 2004-04-21 | 2012-02-08 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
WO2005124950A1 (ja) * | 2004-06-18 | 2005-12-29 | Nec Corporation | Iii族窒化物半導体光素子およびその製造方法 |
JP4712450B2 (ja) * | 2004-06-29 | 2011-06-29 | 日本碍子株式会社 | AlN結晶の表面平坦性改善方法 |
WO2006013698A1 (ja) * | 2004-08-02 | 2006-02-09 | Nec Corporation | 窒化物半導体素子、及びその製造方法 |
WO2006030845A1 (ja) * | 2004-09-16 | 2006-03-23 | Nec Corporation | Iii族窒化物半導体光素子 |
JP4869576B2 (ja) * | 2004-09-29 | 2012-02-08 | 新日本無線株式会社 | 窒化物半導体装置及びその製造方法 |
US8441030B2 (en) * | 2004-09-30 | 2013-05-14 | International Rectifier Corporation | III-nitride multi-channel heterojunction interdigitated rectifier |
US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US20070018192A1 (en) * | 2004-12-21 | 2007-01-25 | Yale University | Devices incorporating heavily defected semiconductor layers |
US20060267007A1 (en) * | 2004-12-31 | 2006-11-30 | Yale University | Devices incorporating heavily defected semiconductor layers |
KR100682879B1 (ko) | 2005-01-07 | 2007-02-15 | 삼성코닝 주식회사 | 결정 성장 방법 |
JP2006202845A (ja) * | 2005-01-18 | 2006-08-03 | Sony Corp | 半導体発光装置 |
JP2006202935A (ja) * | 2005-01-20 | 2006-08-03 | Nec Corp | 半導体レーザ及びその製造方法 |
JP4850423B2 (ja) * | 2005-02-16 | 2012-01-11 | 新日本無線株式会社 | 窒化物半導体装置 |
JP5087818B2 (ja) * | 2005-03-25 | 2012-12-05 | 日亜化学工業株式会社 | 電界効果トランジスタ |
US20070267722A1 (en) * | 2006-05-17 | 2007-11-22 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2006125040A2 (en) * | 2005-05-17 | 2006-11-23 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
US20060289891A1 (en) * | 2005-06-28 | 2006-12-28 | Hutchins Edward L | Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures |
KR101329388B1 (ko) * | 2005-07-26 | 2013-11-14 | 앰버웨이브 시스템즈 코포레이션 | 다른 액티브 영역 물질의 집적회로 집적을 위한 솔루션 |
US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
US7638842B2 (en) * | 2005-09-07 | 2009-12-29 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators |
JP5114865B2 (ja) * | 2006-04-26 | 2013-01-09 | 日産自動車株式会社 | 半導体装置 |
JP2007095823A (ja) * | 2005-09-27 | 2007-04-12 | Toyota Central Res & Dev Lab Inc | 半導体装置と半導体装置製造方法 |
US7737431B2 (en) | 2005-09-28 | 2010-06-15 | Nec Corporation | Group III nitride compound semiconductor light-emitting device |
WO2007062250A2 (en) | 2005-11-28 | 2007-05-31 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
EP1954857B1 (en) * | 2005-12-02 | 2018-09-26 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
JP5341353B2 (ja) * | 2005-12-08 | 2013-11-13 | 日本電気株式会社 | Iii族窒化物半導体素子およびiii族窒化物半導体素子の製造方法 |
JP4705482B2 (ja) * | 2006-01-27 | 2011-06-22 | パナソニック株式会社 | トランジスタ |
US20070196938A1 (en) * | 2006-02-20 | 2007-08-23 | Masahiro Ogawa | Nitride semiconductor device and method for fabricating the same |
JP2007234796A (ja) | 2006-02-28 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ装置およびその製造方法 |
JP4807111B2 (ja) * | 2006-03-09 | 2011-11-02 | 日本電気株式会社 | インナーストライプ型半導体レーザ |
JP4821385B2 (ja) * | 2006-03-14 | 2011-11-24 | 日本電気株式会社 | Iii族窒化物半導体光素子 |
US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
JP5479888B2 (ja) * | 2006-03-30 | 2014-04-23 | クリスタル アイエス インコーポレイテッド | 窒化アルミニウムバルク結晶を制御可能にドーピングする方法 |
US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
JP4932305B2 (ja) * | 2006-03-30 | 2012-05-16 | 株式会社豊田中央研究所 | Iii族窒化物系化合物半導体素子の製造方法 |
GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
WO2008036256A1 (en) * | 2006-09-18 | 2008-03-27 | Amberwave Systems Corporation | Aspect ratio trapping for mixed signal applications |
WO2008039495A1 (en) * | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
JP2008244121A (ja) * | 2007-03-27 | 2008-10-09 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
JP2007184644A (ja) * | 2007-04-02 | 2007-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
US7825328B2 (en) * | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
WO2009035746A2 (en) * | 2007-09-07 | 2009-03-19 | Amberwave Systems Corporation | Multi-junction solar cells |
GB2454655A (en) * | 2007-11-09 | 2009-05-20 | Sharp Kk | Nitride structures with AlInN current confinement layers |
US7718455B2 (en) * | 2007-12-17 | 2010-05-18 | Palo Alto Research Center Incorporated | Method of forming a buried aperture nitride light emitting device |
JP2009231302A (ja) * | 2008-03-19 | 2009-10-08 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体結晶薄膜およびその作製方法、半導体装置およびその製造方法 |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US20110180781A1 (en) * | 2008-06-05 | 2011-07-28 | Soraa, Inc | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN |
US8847249B2 (en) * | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US7915178B2 (en) * | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8034697B2 (en) | 2008-09-19 | 2011-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of devices by epitaxial layer overgrowth |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
JP5193019B2 (ja) * | 2008-12-25 | 2013-05-08 | 新日本無線株式会社 | 半導体装置の製造方法 |
US8422525B1 (en) | 2009-03-28 | 2013-04-16 | Soraa, Inc. | Optical device structure using miscut GaN substrates for laser applications |
US8629446B2 (en) * | 2009-04-02 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
DE112010001615T5 (de) | 2009-04-13 | 2012-08-02 | Soraa, Inc. | Stuktur eines optischen Elements unter Verwendung von GaN-Substraten für Laseranwendungen |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8126024B1 (en) * | 2009-04-17 | 2012-02-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US8355418B2 (en) * | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
JP2013505588A (ja) | 2009-09-18 | 2013-02-14 | ソラア インコーポレーテッド | 電流密度操作を用いた電力発光ダイオード及び方法 |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
JP5381632B2 (ja) * | 2009-11-13 | 2014-01-08 | 住友電気工業株式会社 | Iii族窒化物半導体発光素子を作製する方法、iii族窒化物半導体素子のための電極を形成する方法 |
JP5299301B2 (ja) * | 2010-02-01 | 2013-09-25 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子 |
US20110182056A1 (en) * | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
JP2011211125A (ja) * | 2010-03-30 | 2011-10-20 | Nec Corp | 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、画像表示装置用光源、および画像表示装置 |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
JP5370279B2 (ja) * | 2010-06-11 | 2013-12-18 | 豊田合成株式会社 | n型III族窒化物半導体の製造方法 |
WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
JP2012244099A (ja) | 2011-05-24 | 2012-12-10 | Renesas Electronics Corp | 半導体発光素子 |
JP5734098B2 (ja) | 2011-05-31 | 2015-06-10 | ルネサスエレクトロニクス株式会社 | 半導体レーザの製造方法 |
CN103548127B (zh) * | 2011-06-13 | 2016-12-07 | 松下知识产权经营株式会社 | 半导体装置及其制造方法 |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
JP2013030505A (ja) * | 2011-07-26 | 2013-02-07 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体レーザ素子 |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
JP5596652B2 (ja) * | 2011-10-11 | 2014-09-24 | 日本電信電話株式会社 | 窒化物半導体装置およびその製造方法 |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
US8507947B2 (en) | 2011-12-09 | 2013-08-13 | Power Integrations, Inc. | High quality GaN high-voltage HFETS on silicon |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9099843B1 (en) | 2012-07-19 | 2015-08-04 | Soraa Laser Diode, Inc. | High operating temperature laser diodes |
US8981432B2 (en) | 2012-08-10 | 2015-03-17 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9929310B2 (en) | 2013-03-14 | 2018-03-27 | Applied Materials, Inc. | Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices |
CN105144345B (zh) | 2013-03-15 | 2018-05-08 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
US9419181B2 (en) * | 2013-05-13 | 2016-08-16 | Infineon Technologies Dresden Gmbh | Electrode, an electronic device, and a method for manufacturing an optoelectronic device |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
TWI540753B (zh) * | 2013-07-30 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體結構 |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
WO2017027704A1 (en) * | 2015-08-11 | 2017-02-16 | Cambridge Electronics, Inc. | Semiconductor structure with a spacer layer |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
CN105609603A (zh) * | 2016-03-02 | 2016-05-25 | 厦门乾照光电股份有限公司 | 一种具有复合结构的氮化物缓冲层 |
CN106887789B (zh) * | 2017-03-13 | 2019-10-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体激光器及其制作方法 |
JP7123322B2 (ja) * | 2017-08-31 | 2022-08-23 | 東芝マテリアル株式会社 | 半導体発光素子およびその製造方法 |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
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US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
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US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
WO2023083712A1 (en) * | 2021-11-09 | 2023-05-19 | Ams-Osram International Gmbh | Optoelectronic semiconductor component and method for manufacturing an optoelectronic semiconductor component |
GB202207452D0 (en) * | 2022-05-20 | 2022-07-06 | Sivers Photonics Ltd | Ridge waveguide photonic devices with improved lateal current confinement |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2649936B2 (ja) * | 1988-03-01 | 1997-09-03 | 富士通株式会社 | 歪超格子バッファ |
JP3348656B2 (ja) | 1989-03-01 | 2002-11-20 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH0730185A (ja) * | 1993-07-07 | 1995-01-31 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2590710B2 (ja) * | 1993-11-26 | 1997-03-12 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP3432912B2 (ja) | 1994-09-29 | 2003-08-04 | ローム株式会社 | 半導体レーザ |
JPH09232680A (ja) | 1996-02-22 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
JPH09246670A (ja) * | 1996-03-04 | 1997-09-19 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
US5987048A (en) * | 1996-07-26 | 1999-11-16 | Kabushiki Kaisha Toshiba | Gallium nitride-based compound semiconductor laser and method of manufacturing the same |
JPH1093192A (ja) | 1996-07-26 | 1998-04-10 | Toshiba Corp | 窒化ガリウム系化合物半導体レーザ及びその製造方法 |
US6028339A (en) * | 1996-08-29 | 2000-02-22 | International Business Machines Corporation | Dual work function CMOS device |
JPH10294531A (ja) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | 窒化物化合物半導体発光素子 |
JPH11191657A (ja) * | 1997-04-11 | 1999-07-13 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法及び窒化物半導体素子 |
US5982006A (en) * | 1997-12-09 | 1999-11-09 | Texas Instruments Incorporated | Active silicon-on-insulator region having a buried insulation layer with tapered edge |
US6608327B1 (en) * | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
JP4079393B2 (ja) | 1998-03-10 | 2008-04-23 | シャープ株式会社 | 窒化物系化合物半導体レーザ素子及びその製造方法 |
US6713789B1 (en) * | 1999-03-31 | 2004-03-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method of producing the same |
JP3936109B2 (ja) | 1999-04-26 | 2007-06-27 | 富士通株式会社 | 半導体発光装置及びその製造方法 |
JP3505442B2 (ja) | 1999-08-03 | 2004-03-08 | 三洋電機株式会社 | 窒化物系発光素子 |
JP2001094212A (ja) * | 1999-09-24 | 2001-04-06 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
US6597717B1 (en) * | 1999-11-19 | 2003-07-22 | Xerox Corporation | Structure and method for index-guided, inner stripe laser diode structure |
US6479173B1 (en) * | 1999-12-17 | 2002-11-12 | Motorola, Inc. | Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon |
US6247761B1 (en) * | 2000-01-11 | 2001-06-19 | Den Liang Industrial Co., Ltd. | Stepping rod assembly for the rear axle of a bicycle |
-
2001
- 2001-09-03 JP JP2001265854A patent/JP3785970B2/ja not_active Expired - Lifetime
-
2002
- 2002-08-30 US US10/231,163 patent/US6841410B2/en not_active Expired - Lifetime
- 2002-09-03 CN CNB02132249XA patent/CN1268046C/zh not_active Expired - Fee Related
- 2002-09-03 CN CNB2006100912794A patent/CN100466172C/zh not_active Expired - Fee Related
-
2004
- 2004-11-19 US US10/991,544 patent/US7760785B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103367115A (zh) * | 2007-12-28 | 2013-10-23 | 住友化学株式会社 | 半导体基板、半导体基板的制造方法及电子器件 |
CN102870196A (zh) * | 2010-06-08 | 2013-01-09 | 日本碍子株式会社 | 外延基板以及外延基板的制造方法 |
US8969880B2 (en) | 2010-06-08 | 2015-03-03 | Ngk Insulators, Ltd. | Epitaxial substrate and method for manufacturing epitaxial substrate |
CN104380546A (zh) * | 2012-07-06 | 2015-02-25 | 松下知识产权经营株式会社 | 半导体发光元件 |
CN104380546B (zh) * | 2012-07-06 | 2017-02-22 | 松下知识产权经营株式会社 | 半导体发光元件 |
CN112951909A (zh) * | 2020-04-30 | 2021-06-11 | 英诺赛科(苏州)半导体有限公司 | 半导体器件 |
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US20050072986A1 (en) | 2005-04-07 |
US20030042496A1 (en) | 2003-03-06 |
CN1268046C (zh) | 2006-08-02 |
US7760785B2 (en) | 2010-07-20 |
CN100466172C (zh) | 2009-03-04 |
CN1404192A (zh) | 2003-03-19 |
JP2003078215A (ja) | 2003-03-14 |
US6841410B2 (en) | 2005-01-11 |
JP3785970B2 (ja) | 2006-06-14 |
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