CN1812083A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1812083A
CN1812083A CNA2006100057109A CN200610005710A CN1812083A CN 1812083 A CN1812083 A CN 1812083A CN A2006100057109 A CNA2006100057109 A CN A2006100057109A CN 200610005710 A CN200610005710 A CN 200610005710A CN 1812083 A CN1812083 A CN 1812083A
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mentioned
alloy
pad
key
semiconductor device
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CN100481428C (zh
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梶原良一
伊藤和利
键井秀政
冈浩伟
中村弘幸
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NEC Electronics Corp
Renesas Electronics Corp
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Renesas Technology Corp
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Abstract

本发明的课题是在管芯键合中可使用无铅焊锡。在半导体芯片1与Cu合金制的键和焊盘4之间配置应力缓冲板8，通过用以固相温度大于等于270℃且液相温度小于等于400℃的Sn－Sb－Ag－Cu为主要构成元素的无铅焊锡的接合材料10、9接合半导体芯片1与应力缓冲板8和应力缓冲板8与键和焊盘4，可使用无铅焊锡进行管芯键合而不发生芯片裂纹。

Description

半导体器件及其制造方法
技术领域
本发明涉及半导体器件及其制造方法，特别是涉及应用于固定半导体元件的无铅焊锡有效的技术。
背景技术
以前的管芯键合用合金部件以0.05～0.5mm厚度的纯Al板或42合金材料为基体材料，在其两面上设置了0.005～0.1mm厚度的接合用合金层。再者，作为上述接合用合金层，使用了具有小于等于400℃的液相线温度、大于等于280℃的固相线温度的不含Pb的合金或280℃中的液相的体积比例小于等于15％的不含Pb的合金(例如，参照专利文献1)。
【专利文献1】特开2001-127076号公报(第2-3页)。
作为可应用于半导体器件的管芯键合的焊锡材料的性质，以下的4个项目是重要的。第1是工艺温度，可进行小于等于400℃的管芯键合，以液相温度小于等于400℃及与引线框架材料的润湿性方面良好为条件。第2，以具有耐受2次安装半导体器件时的260℃的加热冷却的耐热性且固相温度大于等于270℃为条件。第3，在将Si芯片接合到Cu合金的键和焊盘上的情况下，焊锡接合部缓和伴随热膨胀差的热变形，防止因热应力引起的硅芯片的破损。第4，对于由半导体元件的发热引起的温度变动，焊锡接合部的热疲劳寿命充分地长。
以前已知的ZnAlGe材料或ZnAlMgGa材料等的ZnAl类焊锡材料的固相和液相的温度是309℃和347℃或359℃和375℃，满足耐受管芯键合的小于等于400℃的工艺温度或260℃的2次安装工艺温度的要求，但焊锡材料的热膨胀率大且材质硬，弹性率或屈服强度高，故存在芯片产生裂纹这样的问题。此外，由于Al在焊锡材料的表面上形成牢固的氧化膜，故对于Ni或Cu等的引线框架材料来说，润湿性差，存在不能进行良好的管芯键合的问题。
另一方面，SnSbAg(15～20wt％)焊锡满足管芯键合的工艺温度小于等于400℃和管芯键合性，防止因热应力引起的芯片裂纹，但对于液相温度：280℃～315℃来说，固相温度低，为250℃，故在260℃的安装工艺中，焊锡材料部分地熔融，由于此时密封材料的树脂因热膨胀对芯片给予剥离方向的外力，故存在焊锡接合部中产生剥离的问题。此外，在模拟了伴随半导体元件的发热的温度变化的温度循环试验中，在SnSb焊锡内在短时间内发生因疲劳引起的剥离裂纹，存在元件的电特性急速地恶化这样的温度循环可靠性的问题。此外，存在下述问题：SnSb(20～40wt％)焊锡较硬，产生芯片裂纹，由于固相温度是250℃，故不能耐受260℃的回流(reflow)，SnSb(大于等于43wt％)焊锡的液相线大于等于400℃，难以进行小于等于400℃的管芯键合。
再有，在上述专利文献1(特开2001-127076号公报)中公开了ZnAl类、ZnSn类、AuSn类和AuGe类等的接合用合金，但Zn类合金的润湿性差，此外，Au类合金的成本高，这些分别是问题。
发明内容
本发明的目的在于提供在管芯键合中可使用无铅焊锡的技术。
根据本说明书的记述和附图，本发明的上述和其它的目的以及新的特征会很明白的。
如果简单地说明本申请中被公开的发明中具有代表性的内容的概要，则如下所述。
即，本发明在半导体元件与键和焊盘之间配置应力缓冲部件，利用固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu或Bi-Ag-Sb为主要构成元素的无铅焊锡接合了半导体元件与应力缓冲部件。
此外，在本发明中，在引线框架的键和焊盘上供给由膏状或粒状构成且不含铅的焊锡并使其熔融，进而用焊锡固定粘接其热膨胀、屈服应力或弹性率比Cu合金的热膨胀、屈服应力或弹性率低的应力缓冲板，其后，在应力缓冲板上供给由膏状或粒状构成且不含铅的焊锡并使其熔融，进而在应力缓冲板上的焊锡上配置半导体元件并利用该焊锡固定粘接半导体元件，其后电连接半导体元件的电极与引线框架的引线。
如果简单地说明利用在本申请中被公开的发明中具有代表性的内容得到的效果，则如下所述。
在管芯键合中既可防止芯片裂纹，又可实现无铅焊锡的应用。
附图说明
图1是透过密封体示出本发明的实施形态的半导体器件的内部结构的一例的平面图。
图2是示出沿图1中示出的A-A线切断了的剖面的结构的剖面图。
图3是示出在本发明的实施形态的半导体器件的组装中被使用的引线框架的结构的一例的图，(a)是部分平面图，(b)是示出沿(a)的A-A线切断了的剖面的结构的剖面图。
图4是示出本发明的实施形态的半导体器件的组装顺序的一例的制造工艺流程图。
图5是示出以装入本发明的实施形态的半导体器件中的应力缓冲板和焊锡为参数的半导体器件的评价结果的一例的结果数据图。
图6是透过密封体示出作为本发明的实施形态的半导体器件的变形例的晶体管的内部结构的平面图。
图7是示出沿图6中示出的A-A线切断了的剖面的结构的剖面图。
图8是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图。
图9是示出图8中示出的半导体器件的结构的平面图。
图10是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图。
图11是示出沿图10中示出的A-A线切断了的剖面的结构的剖面图。
图12是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图。
图13是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图。
图14是示出在本发明的实施形态的半导体器件中被使用的Bi-Ag-Sb类合金的固相、液相温度的评价结果的一例的数据图。
图15是示出在本发明的实施形态的半导体器件中被使用的Sn-Sb-Ag-Cu类合金的固相、液相温度的评价结果的一例的数据图。
图16是示出在本发明的实施形态的半导体器件中被使用的Bi-Ag类合金的2元状态图的一例的状态图。
图17是示出作为本发明的实施形态的半导体器件的变形例的晶体管的结构的剖面图。
图18是示出作为本发明的实施形态的变形例的半导体器件的背面一侧的结构的背面图。
图19是示出沿图18中示出的B-B线切断了的剖面的结构的剖面图。
具体实施方式
在以下的实施形态中，除特别必要时外，原则上不重复同一或同样的部分的说明。
再者，在以下的实施形态中，为了方便起见而有其必要时，分割为多个部分或实施形态来说明，但除了特别明确地示出的情况外，这些多个部分或实施形态彼此不是无关系的，一方处于另一方的一部分或全部的变形例、细节、补充说明等的关系。
此外，在以下的实施形态中，在提及要素的数目等(包含个数、数值、量、范围等)的情况下，除了特别明确地示出的情况和在原理上明显地被限定于特定的数目的情况等外，不限定于该特定的数目，可以大于等于或小于等于特定的数目。
以下，根据附图详细地说明本发明的实施形态。再有，在说明实施形态的全部的图中，对具有同一功能的部件附以同一符号，省略其重复的说明。
(实施形态)
图1是透过密封体示出本发明的实施形态的半导体器件的内部结构的一例的平面图，图2是示出沿图1中示出的A-A线切断了的剖面的结构的剖面图，图3是示出在本发明的实施形态的半导体器件的组装中被使用的引线框架的结构的一例的图，(a)是部分平面图，(b)是示出沿(a)的A-A线切断了的剖面的结构的剖面图，图4是示出本发明的实施形态的半导体器件的组装程序的一例的制造工艺流程图，图5是示出以装入本发明的实施形态的半导体器件中的应力缓冲板和焊锡为参数的半导体器件的评价结果的一例的结果数据图，图6是透过密封体示出作为本发明的实施形态的半导体器件的变形例的晶体管的内部结构的平面图，图7是示出沿图6中示出的A-A线切断了的剖面的结构的剖面图，图8是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图，图9是示出图8中示出的半导体器件的结构的平面图，图10是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图，图11是示出沿图10中示出的A-A线切断了的剖面的结构的剖面图，图12是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图，图13是示出本发明的实施形态的变形例的半导体器件的结构的部分剖面图，图14是示出在本发明的实施形态的半导体器件中被使用的Bi-Ag-Sb类合金的固相、液相温度的评价结果的一例的数据图，图15是示出在本发明的实施形态的半导体器件中被使用的Sn-Sb-Ag-Cu类合金的固相、液相温度的评价结果的一例的数据图，图16是示出在本发明的实施形态的半导体器件中被使用的Bi-Ag类合金的2元状态图的一例的状态图，图17是示出作为本发明的实施形态的半导体器件的变形例的晶体管的结构的剖面图，图18是示出作为本发明的实施形态的变形例的半导体器件的背面一侧的结构的背面图，图19是示出沿图18中示出的B-B线切断了的剖面的结构的剖面图。
图1和图2中示出的本实施形态的半导体器件是具有纵型半导体元件的电力用的功率半导体封装14，例如是在半导体元件的主面1a上形成了晶体管元件的电路的晶体管封装。
如果说明功率半导体封装14的结构，则由下述部分构成：主面1a；其相反一侧的背面1b；在主面1a上形成的主电极2和控制电极3；在背面1b上形成的电极15；具备在主面1a上形成的电路的作为半导体元件的半导体芯片1；与半导体芯片1的背面1b的电极15接合的导电性的键和焊盘4；与半导体芯片1的主面1a的主电极2电连接的第1引线6；与半导体芯片1的主面1a的控制电极3电连接的第2引线7；与键和焊盘4一体地连结了的第3引线5；电连接主电极2与第1引线6的Al导线12；电连接控制电极3与第2引线7的Al导线13；配置在半导体芯片1与键和焊盘4之间且其热膨胀、屈服应力或弹性率比作为形成键和焊盘4的主材料的Cu合金的热膨胀、屈服应力或弹性率低的应力缓冲板(应力缓冲部件)8；以及利用密封用树脂密封半导体芯片1、Al导线12、13、键和焊盘4和各引线的一部分的密封体11。
利用固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu为主要构成元素的合金(是不含铅的焊锡，以后也将这样的焊锡称为无铅焊锡)和以Bi-Ag-Sb为主要构成元素的合金(无铅焊锡)中的任一种接合材料9、10接合了半导体芯片1与应力缓冲板8和应力缓冲板8与键和焊盘4。
例如，如图1中所示，利用接合材料9、10经由热膨胀率为8～12ppm/K的Cu/Fe-Ni合金/Cu层叠板构成的应力缓冲板8将是纵型半导体元件且由硅(Si)构成的半导体芯片1键合到Cu制的键和焊盘4上。
在半导体芯片1的背面1b的表层上形成了Ti/Ni/Au或Ag、V、或Ta/Ni/Au或Ag。再有，在使用Sn-Sb-Ag-Cu合金作为接合材料9、10的情况下，在应力缓冲板8的表面背面上进行了电解Ni镀或无电解NiP镀，键和焊盘4的表面成为电解Ni镀或无电解镀的Cu。
另一方面，在使用Bi-Ag-Sb合金作为接合材料9、10的情况下，在应力缓冲板8的表面背面上进行了电解Ag镀，键和焊盘4的表面成为电解Ag镀或无电解镀的Cu。
此外，利用Al导线12、13分别在半导体芯片1的主面1a的主电极2和控制电极3与外部取出用的第1引线6和第2引线7之间进行了连线。再者，形成了由密封用树脂构成的密封体11，使其覆盖半导体芯片1、Al导线12、13、应力缓冲板8、接合材料9、10的全部和键和焊盘4、第1引线6、第2引线7、第3引线5各自的一部分。
在图1和图2中示出的功率半导体封装14中，在Cu合金制的键和焊盘4的元件安装区域上配置热膨胀率为Si的半导体芯片1和键和焊盘4的中间的值的作为低热膨胀部件的应力缓冲板8，作成了用以Sn-Sb-Ag-Cu为主要构成元素的合金或以Bi-Ag-Sb为主要构成元素的合金接合半导体芯片1与键和焊盘4的结构。
再有，在Cu合金制的键和焊盘4上配置了作为低热膨胀部件的应力缓冲板8的情况下，通过采用热膨胀率为8～12ppm/K的Cu/FeNi复合材料或Cu/Cu20复合材料作为上述低热膨胀部件，与将Cu合金直接接合到Si的半导体芯片1上的情况相比，可将热膨胀差减少到约1/2，可防止安装或温度循环时的半导体芯片1的裂纹。
此外，如图1中所示，作为应力缓冲部件的应力缓冲板8是纵向和横向的平面尺寸被形成得比半导体芯片1大且比键和焊盘4小的薄板状的部件。由于应力缓冲板8比半导体芯片1大，故从芯片发出的热不会通过芯片内部，而是从芯片的背面1b直接放出到外部，可通过接合材料10或应力缓冲板8到达键和焊盘4。因而，由于热不通过芯片内部，故在散热时在芯片内部不会发生局部的温度上升，可防止内部的单元元件因温度上升而被破坏。
此外，由于使应力缓冲板8比半导体芯片1大，芯片下的接合材料10伸出到半导体芯片1的周围的外侧，故在组装后的检查时，可容易地进行确认是否可靠地进行了焊锡连接的目视检查。
其次，将接合材料9、10定为以Sn-Sb-Ag-Cu为主要成分的合金，并将其组成定为43wt％≤Sb/(Sn+Sb)≤48wt％且15wt％≤(Ag+Cu)≤25wt％，如图15中所示，可成为固相温度大于等于270℃且液相温度小于等于380℃的熔融特性，故可进行小于等于400℃的管芯键合。此外，由于焊锡强度大于等于100MPa，故与应力缓和结构组合，可减少焊锡部的变形量，与以前的铅焊锡的情况相比，可大幅度地提高温度循环寿命。
此外，由于固相温度大于等于270℃，故即使在安装时的260℃的加热中，也没有再熔融的情况，可得到充分的耐受260℃回流的性能。
另一方面，在接合材料9、10为Bi-Ag-Sb合金的情况下，通过成为5wt％≤Ag/(Bi+Ag)≤25wt％且5wt％≤Sb≤20wt％的组成，可使固相温度大于等于270℃且液相温度小于等于390℃，可进行小于等于400℃的管芯键合。
之所以定为5wt％≤Ag/(Bi+Ag)，是从改善关于焊锡的伸展的机械的特性方面必要的条件中选择的，之所以定为Ag/(Bi+Ag)≤25wt％，如图16中所示，是从为了使液相温度小于等于400℃所必要的组成范围中选择的。此外，之所以定为5wt％≤Sb，是从焊锡耐受260℃回流的270℃的固相温度中选择的，之所以定为Sb≤20wt％，是从液相温度小于等于400℃条件中选择的值。
利用Sb的添加，可使该焊锡的焊锡强度大于等于100MPa，与应力缓和结构组合，与以前的包含了铅的焊锡的情况相比，可大幅度地提高温度循环寿命。此外，由于固相温度大于等于270℃，故在260℃的回流时没有焊锡的再熔融，可耐受重复的回流试验。
按照本实施形态的功率半导体封装14，由于使用了由以Sn-Sb-Ag-Cu合金或Bi-Ag-Sb合金构成的无铅焊锡材料作为接合材料，故可提供环境负载少的晶体管封装制品。此外，由于上述接合材料是高强度的硬的材质，可使以前几乎全部由接合材料接受的热变形分散到半导体芯片1或键和焊盘4中，同时，由于在半导体芯片1与键和焊盘4之间夹住了Cu/Fe-Ni/Cu低热膨胀材料的应力缓冲板8，故可减少对半导体芯片1施加的热应力，可防止芯片裂纹。再者，与此同时可大幅度地延长接合材料9、10的热疲劳寿命，可提供高可靠性的晶体管封装(功率半导体封装14)而不降低生产性。
此外，通过用固相温度大于等于270℃且液相温度小于等于400℃的Sn-Sb-Ag-Cu合金或Bi-Ag-Sb合金进行管芯键合，可耐受2次安装的260℃回流工序，而且，可提供在温度循环寿命或高温可靠性方面优良的无铅焊锡的晶体管封装(功率半导体封装14)。
其次，使用图3和图4，说明功率半导体封装14的组装。
首先，上述组装的概略如下：在包含氢的还原气氛中，将图3(a)、(b)中示出的引线框架100加热到360℃，在键和焊盘101上供给既定尺寸的Sn-Sb-Ag-Cu合金颗粒或Bi-Ag-Sb合金颗粒并使其熔融，进而，一边施加摩擦，一边安装作为应力缓冲部件的应力缓冲板109。其后，在该加热状态下，在应力缓冲板109上供给相同的合金粒子并使其熔融，一边施加摩擦，一边安装半导体芯片117，进行管芯键合。
其后，在冷却了引线框架100后，利用Al导线键合。对作为外部连接用端子的引线102与芯片电极进行连线，使用模塑模具进行树脂模塑。其后，切断并除去不需要的引线框架部分，完成封装。再有，与没有应力缓冲板109的以前的晶体管封装的组装工序相比，在本实施形态的组装中，虽然增加了接合应力缓冲板109的工序，但由于组装方法与芯片接合工序相同，故生产率与以前相同。
接着，使用图4中示出的制造工序流程图，说明作为本实施形态的半导体器件的一例的功率半导体封装126的详细的组装。
首先，准备具有键和焊盘101和在其周围配置了的作为外部连接用端子的多个引线102的图3中示出的多联的引线框架100。再有，在引线框架100中，用各悬吊引线103、104将多个键和焊盘101和引线102固定到框部105上。引线框架100例如是将Cu合金作为主材料形成的薄板状的部件。
其后，在步骤S1中示出的焊锡供给工序中，在引线框架100的键和焊盘101上供给由膏状或粒状构成且是无铅的焊锡并使其熔融。在此，在还原气氛中进行引线框架100的预备加热，使用分配器106，例如在键和焊盘101上以既定量供给焊锡膏107，利用热块进行正式加热，熔融焊锡，形成熔融焊锡108。
再有，上述无铅焊锡是固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu为主要构成元素的合金的焊锡材料或以Bi-Ag-Sb为主要构成元素的合金任一种焊锡材料。
其后，在步骤S2中示出的缓冲板供给+摩擦键合工序中，在上述无铅焊锡上配置其热膨胀、屈服应力或弹性率比Cu合金的热膨胀、屈服应力或弹性率低的应力缓冲板109，其后，进行应力缓冲板109的加压和摩擦，固定粘接应力缓冲板109。在此，一边在熔融焊锡108上用筒夹110进行吸引111，一边保持应力缓冲板109，进而，在熔融焊锡108上供给了应力缓冲板109后，同时施加摩擦112，将焊锡的尺寸扩展为应力缓冲板109的尺寸，对应力缓冲板109进行焊锡接合113。
其后，在步骤S3中示出的焊锡供给工序中，在应力缓冲板109上供给由膏状或粒状构成且与上述焊锡同样的无铅焊锡并使其熔融。在此，在被加热了的状态下在应力缓冲板109上使用分配器114以既定量供给焊锡膏115，由此熔融焊锡，形成熔融焊锡116。
其后，在步骤S4中示出的芯片供给+摩擦键合工序中，在熔融焊锡116上配置半导体芯片117，其后，进行半导体芯片117的加压和摩擦，固定粘接半导体芯片117。在此，在熔融焊锡116上用筒夹118供给半导体芯片117，施加摩擦119，进行压入管芯键合。再者，在还原气氛中冷却到既定温度。由此，对半导体芯片117的背面117b与焊锡进行焊锡接合120。半导体芯片117在其主面117a朝向上方的状态下被接合。
其后，在步骤S5中示出的引线键合工序中，电连接芯片电极与引线框架100的引线102。在此，在冷却到室温后，在大气气氛中利用Al导线121、122的超声波键合电连接芯片上的电极与引线102。在此，利用键合工具123施加超声波振动124，进行超声波键合。
其后，在步骤S6中示出的模塑工序中，使用密封用树脂进行树脂模塑，使其覆盖半导体芯片117、键和焊盘101和引线102的一部分，形成密封体125。在此，利用采用了模塑金属模的连续自动模塑，按封装单位覆盖密封用树脂进行烘烤处理，由此形成密封体125。
其后，在步骤S7中示出的切断+成形工序中，从引线框架100切断分离从密封体125突出的引线102，同时按所希望的形状对引线102进行弯曲成形。在此，进行各引线102的切断、成形和悬吊引线103、104的切断，结束组装(在步骤S8中示出的完成)。
再有，步骤S1～S4中的管芯键合工序全部在还原气氛下进行，是在引线框架100被加热了的状态下用输送带传送的连续的工序。此外，焊锡膏107、115的有机成分是具有被加热后完全气化、在焊锡熔融前消失的性质的溶剂。
按照本实施形态的半导体器件的组装，由于对应力缓冲板109和半导体芯片117施加摩擦119进行了键合，故可在大幅度地减少了焊锡中的空洞的状态下进行接合，可提供散热特性稳定的半导体器件。此外，由于用膏状供给了高温的无铅焊锡，故可容易地进行焊锡的连续的自动供给，而且，即使芯片的尺寸改变、焊锡的使用量改变了的情况下，也可在不进行设备的变更的情况下进行调整，可提供批量生产性优良的生产工艺。再者，由于与以前的高铅焊锡的组装工序相比工艺是相同的，故可按原样使用以前的组装设备，可将设备成本的增加抑制得较少。
其次，图5是示出改变接合材料的组成和应力缓冲板来组装半导体器件后进行了各种评价的结果的图。在图5中，本实施形态是No.1～15，No.16～25是比较例。在No.1～4的本实施形态中，使用以1∶1∶1的厚度层叠了Cu/Fe-Ni合金/Cu的0.2mm厚度的低热膨胀板作为应力缓冲板，焊锡组成是满足43wt％≤Sb/(Sn+Sb)≤48wt％且15wt％≤(Ag+Cu)≤25wt％的条件的组成的情况。在接合温度(小于等于400℃为合格)、芯片裂纹、耐受260℃回流的性能、温度循环寿命的全部的评价项目中通过了判定基准。如果Sb量多，则如No.16、18的比较例那样，必须有高的接合温度，而且，由于在高温区域中凝固，故热应力变大，发生芯片裂纹。如果如No.17的比较例那样没有Cu、作成只是Ag的3元合金，则由于只是液相温度上升、接合温度上升，而固相温度不上升，故不能得到耐受260℃回流的性能。
即使在使用了本发明的接合材料的情况下，在不使用应力缓冲板8的情况下，也引起芯片裂纹，在使用了热膨胀率小于等于6.7ppm/K的应力缓冲板8的情况下，在键和焊盘4与应力缓冲板8之间发生高的热应力，产生了键和焊盘4的Ni镀层与基底剥离的现象。
根据以上所述，可判断应力缓冲板8的热膨胀率为键和焊盘4与半导体芯片1的中间区域是适当的。No.8～12示出将在Bi-Ag中添加了Sb的合金作为接合材料组装了封装的情况的评价结果。如果使接合材料9、10的合金组成成为5wt％≤Ag/(Bi+Ag)≤25wt％且5wt％≤Sb≤20wt％的组成，则通过使用应力缓冲板8，在全部的评价项目中可通过判定基准。
但是，如果如No.21、23的比较例那样Sb量少，则固相温度低至262℃，不能耐受260℃回流试验。此外，如果如No.25的比较例那样Sb量多，则固相和液相温度上升，接合温度必须大于等于400℃，硬度也增加，发生了芯片裂纹。
如上所述，应用热膨胀率为半导体芯片1与键和焊盘4的中间的值(8～12ppm/K)的应力缓冲板8，通过使用Sn-Sb-Ag-Cu合金或Bi-Ag-Sb合金作为接合材料9、10，可用无铅焊锡提供具有既定的可靠性的晶体管封装制品(功率半导体封装126)。
图6和图7是示出本实施形态的变形例的功率半导体封装(半导体器件)34的图，在Cu合金制的键和焊盘25的元件安装区域上以既定的厚度配置屈服强度或耐力比Cu合金低的软质性的应力缓冲部件，在材质方面选择柔软的Ag作为上述应力缓冲部件，预先在Cu合金制的键和焊盘25上配置了厚度20μmt的Ag镀膜29。
在Ag镀膜29上用Bi-Ag-Sb合金30对表层具有由Ti/NiP/Ag或Ti/Ni/Ag或Ti/Ni/Cu/Ag构成的背面21b一侧的电极24的半导体芯片21进行了管芯键合。用被键合了的Al导线32、33对半导体芯片21的主面21a的主电极22和控制电极23与第1引线27和第2引线28间分别进行了连线。第3引线26与键和焊盘25一体地连结了。
形成了密封体31，使其覆盖半导体芯片21、Al导线32、33、Bi-Ag-Sb合金30的全部和键和焊盘25、第1引线27、第3引线26和第2引线28的各自的一部分。
按照本实施形态，在Cu合金制的键和焊盘25上形成了厚的Ag镀膜29，在其上对半导体芯片21进行了管芯键合，因为是在Cu合金制的键和焊盘25上施加了屈服强度或耐力低的软质性的Ag镀膜29的结构的缘故，由于在低的应力状态下软质材料的Ag镀膜29发生塑性变形吸收在Cu合金的键和焊盘25与Si的半导体芯片21之间发生的热变形，故在半导体芯片21中不发生高的应力。
其结果，在管芯键合后的冷却过程或安装工艺或温度循环施加时的加热冷却过程中，可消除半导体芯片21发生裂纹的问题。
此外，由于用Ag镀膜29的塑性变形吸收键和焊盘25与Si的半导体芯片21之间发生的热变形，不对半导体芯片21施加高的应力，故不发生芯片裂纹，而且，由于使用Bi-Ag-Sb合金30作为接合材料，故可提供环境负载小的晶体管封装制品(功率半导体封装34)。再者，由于预先在键和焊盘25上形成了Ag镀膜29，故可用与以前完全相同的方法进行晶体管封装(功率半导体封装34)的组装，可谋求半导体器件(制品)的无铅化而不进行特别的设备投资。
其次，作为图8和图9中示出的变形例的半导体器件的功率半导体封装48，在Cu合金制的键和焊盘43的芯片安装面上预先以压延方式埋入了由Fe-Ni合金或Fe-Ni-Co合金构成的低热膨胀部件(应力缓冲部件)44，在其上施加了Ni镀膜45。在主面41a朝向了上方的状态下，在埋置了低热膨胀部件44的位置上利用由Sn-Sb-Ag-Cu合金构成的接合材料47对形成了背面41b的电极42的半导体芯片41进行了管芯键合。再有，在与形成了键和焊盘43的Ni镀膜45的面相反一侧的面上也形成了Ni镀膜46。
按照变形例的功率半导体封装48，预先在键和焊盘43中埋入了作为应力缓冲部件的低热膨胀部件44，同时在其表面上形成了Ni镀膜45，故可用与以前相同的组装工序组装功率半导体封装48，再者，可用以前的设备组装无铅焊锡的半导体器件。此外，组装工序数也与以前的组装工序数相同，可提供在生产性方面优良的功率半导体封装48。
其次，图10和图11中示出的变形例的作为半导体器件的功率半导体封装56，示出了缓和热变形的结构，在Cu合金制的键和焊盘53的元件安装区域的下部(内部)，通过进行多次冲压加工或冲压加工和切断加工，形成了内含的多个微细的空隙部(应力缓冲部件)54。空隙部54的形成区域比芯片尺寸大，空隙部54的深度约为0.2～0.4mm。再者，将空隙部54间的Cu合金部分的厚度形成为约0.2～0.5mm。对于空隙部54来说，首先用冲压加工等形成具有开口部的缝隙，其后通过用第2次冲压加工使所述开口部塌陷并使之堵塞开口部，可形成内含的空隙部54。
再有，如图11中所示，以格子状形成了空隙部54。在以格子状形成的空隙部54上的Cu合金的键和焊盘53上，利用Sn-Sb-Ag-Cu合金或Bi-Ag-Sb合金的接合材料55对主面51a朝向了上方的状态的半导体芯片51进行了管芯键合。即，半导体芯片51的背面51b的电极52与接合材料55进行了接合。
按照变形例的功率半导体封装56，由于在键和焊盘53的元件安装区域的下部形成了内含的空隙部54，利用该空隙部54吸收半导体芯片51与键和焊盘53之间的热变形，由于在半导体芯片51中不发生高的热应力，故可防止芯片裂纹。此外，由于未对具有键和焊盘53的引线框架部件附加特殊的材料，故可将上述引线框架部件的成本抑制得较低，可用低成本实现无铅焊锡的晶体管封装(功率半导体封装56)。
图12和图13中示出的变形例的作为半导体器件的功率半导体封装69、79，分别在安装半导体芯片61、71的键和焊盘63、73的元件安装区域中形成作为开放型的应力缓冲部件的槽部64、74，形成了Ag镀膜65、75，使其填埋该槽部64、74，而且在键和焊盘63、73的元件安装区域上成为约10μmt的厚度。
在使用Sn-Sb-Ag-Cu合金作为接合材料68的图12中示出的功率半导体封装69的情况下，在形成了Ag镀膜65的键和焊盘63的表面上施加了Ni镀膜66，而且在其相反一侧的面上施加了Ni镀膜67。这是由于在Ag和Sn类焊锡中Ag熔入Sn类焊锡中会使Sn类焊锡的熔点变化，故为了防止这一点，形成了Ni镀膜66、67。
因而，在功率半导体封装69中，在Cu合金的键和焊盘53上的Ag镀膜65上设置Ni镀膜66，利用Sn-Sb-Ag-Cu合金的接合材料68对主面61a朝向了上方的状态的半导体芯片61进行了管芯键合。即，半导体芯片61的背面61b的电极62与接合材料68进行了接合。
另一方面，在使用Bi-Ag-Sb合金作为接合材料78的图13中示出的功率半导体封装79的情况下，在Cu合金的键和焊盘73上直接对半导体芯片71进行了管芯键合。这是由于在Ni和Bi-Ag-Sb合金中反应剧烈，Bi-Ag-Sb合金的特性会变化，故为了防止这一点，不设置Ni类的镀膜，而在Ag镀膜75上直接配置Bi-Ag-Sb合金的接合材料78，进行半导体芯片71的固定粘接。
因而，在功率半导体封装79中，在Cu合金的键和焊盘73上的Ag镀膜75上，利用Bi-Ag-Sb合金的接合材料78直接对主面71a朝向了上方的状态的半导体芯片71进行了管芯键合。即，半导体芯片71的背面71b的电极72与接合材料78进行了接合。
按照变形例的功率半导体封装69、79，分别在键和焊盘63、73中设置开放型的槽部64、74，由于在该处施加了柔软的Ag镀膜65、75，故成为能吸收半导体芯片61、71/Cu合金的键和焊盘63、73间的大的热变形的结构，即使在芯片尺寸大的情况下，也能防止芯片裂纹。此外，与图10中示出的内含型的空隙部54相比，制造是容易的，可提高引线框架部件的生产成品率。
其次，图14是示出本实施形态的Bi-Ag-Sb合金类接合材料的固相和液相温度的评价结果的数据。在Sb量小于等于3wt％的情况下，固相温度比270℃低，但在Sb量大于等于5～20wt％的情况下，可知固相温度比270℃高，液相温度小于等于400℃。用该组成进行了晶体管封装(半导体器件)的安装评价的结果，可确认固相温度大于等于270℃，可耐受260℃回流。
此外，图15是示出本实施形态的Sn-Sb-Ag-Cu合金类接合材料的固相和液相温度的评价结果的图。由此可知，在(Ag+Cu)的含有量为16.4～19.5wt％时，如果使Sb/(Sn+Sb)量为41～54wt％，则固相温度大于等于270℃且液相温度小于等于400℃。用该组成进行了晶体管封装(半导体器件)的安装评价的结果可知，与Bi-Ag-Sb合金同样，固相温度大于等于270℃，可耐受260℃回流。
图17中示出的变形例的作为半导体器件的功率半导体封装140是将本发明应用于用焊锡接合两面的电极的MOS(金属氧化物半导体)类型的晶体管封装的例子。
功率半导体封装140的结构如下：在半导体芯片133的背面133b一侧(下侧)的电极133d与键和焊盘131之间插入由Cu/Fe-Ni合金/Cu层叠板(厚度比＝1∶1∶1，平均热膨胀率10～11ppm/k)构成的作为应力缓冲部件的应力缓冲板134，用Sn-35Sb-11Ag-9Cu焊锡135、136接合了其上下的接合部位。另一方面，主面133a一侧(电路一侧)的电极133c在Al焊盘上在Cr/Ni的金属化层或Al焊盘上进行了锌酸盐处理后被施加Ni镀层，用与管芯键合相同的Sn-35Sb-11Ag-9Cu焊锡137、138接合到各自的外部连接端子用的引线132上。
用与应力缓冲板134同样的低热膨胀且电传导性良好的Cu/Fe-Ni合金/Cu层叠板构成了引线132。到管芯键合为止的组装工艺与图4中示出的组装工序相同。主面133a一侧的电极133c的接合，在360～380℃的管芯键合后，被冷却到小于等于300℃，在该状态下在电极133c上供给膏状的焊锡，进而与多条引线132一体化了的引线框架部件进行位置对准来配置，从上述引线框架部件的上侧起按压热块，一并地接合了多个半导体芯片133。最后，利用连续自动模塑进行树脂密封，形成密封体139，其后，分别从上述引线框架部件切断键和焊盘131和引线132，完成功率半导体封装140。
按照图17中示出的变形例的功率半导体封装140，由于用无铅焊锡接合了封装内部的全部的连接部，故可提供不对环境给予不良影响的晶体管封装，而且，由于在宽的面积上用Sn-35Sb-11Ag-9Cu焊锡137接合了源电极(电极133c)与引线132，故连接部的电阻(导通电阻)小，可提供低损耗的封装。此外，与Al引线键合相比，可减薄芯片上部的厚度尺寸，可省略引线132的键合区域，其结果，可减小封装尺寸。
图18和图19中示出的变形例的半导体器件是将本发明应用于使用引线框架部件组装的多芯片封装151的半导体器件。
该多芯片封装151由作为多个外部连接用端子的引线144、多个键和焊盘141、142、143构成的上述引线框架部件来组装，分别将1个半导体芯片146键合到各键和焊盘上。即，是装入了多个半导体芯片146的半导体器件。
在各键和焊盘与半导体芯片146之间插入了作为应力缓冲部件的低热膨胀的应力缓冲板147，用Sn-Sb-Ag-Cu焊锡148、149进行了接合。利用由Al导线150进行的引线键合连接了半导体芯片146的主面146a一侧(电路面一侧)的电极146c与引线144或电连接所必要的键和焊盘。此外，背面146b的电极146d经Sn-Sb-Ag-Cu焊锡148、应力缓冲板147和Sn-Sb-Ag-Cu焊锡149与键和焊盘进行了连接。再者，利用由密封用树脂形成了的密封体145密封了各半导体芯片146、Al导线150、焊锡、引线144和键和焊盘的一部分。
按照图18和图19中示出的变形例的多芯片封装151，可提供用多个半导体芯片146构成的高功能且无铅焊锡的半导体封装，进而，由于用金属接合进行了管芯键合，故在环境方面是优良的，可提高功率循环或温度循环可靠性。此外，由于使用了高熔点焊锡，故也有在高温可靠性方面优良的优点。
以上根据发明的实施形态具体地说明了由本发明者进行了的发明，但本发明不限定于上述发明的实施形态，在不脱离其要旨的范围内当然可作各种各样的变更。
例如，在上述实施形态中，以半导体器件是晶体管封装(功率半导体封装)的情况为主进行了说明，但上述半导体器件不限定于晶体管封装。
本发明适合于半导体器件和半导体制造技术。

Claims (17)

1.一种半导体器件，其特征在于：
具有：
半导体元件，具备主面、其相反一侧的背面、在上述主面上形成的电极、在上述背面上形成的电极和在上述主面上形成的电路；
导电性的键和焊盘，与上述半导体元件的上述背面的电极接合；
导电性的引线，与上述半导体元件的上述主面的电极电连接；
密封体，密封上述半导体元件、上述键和焊盘和上述引线的一部分；以及
应力缓冲部件，配置在上述半导体元件与上述键和焊盘之间，而且其热膨胀、屈服应力或弹性率比形成上述键和焊盘的主材料的热膨胀、屈服应力或弹性率低，
利用固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu为主要构成元素的合金和以Bi-Ag-Sb为主要构成元素的合金中的任一种接合材料接合了上述半导体元件与上述应力缓冲部件。
2.如权利要求1中所述的半导体器件，其特征在于：
形成上述键和焊盘和上述引线的上述主材料是Cu合金。
3.如权利要求2中所述的半导体器件，其特征在于：
上述应力缓冲部件是由热膨胀率为8～12ppm/K的复合材料构成的薄板。
4.如权利要求1中所述的半导体器件，其特征在于：
上述应力缓冲部件是在上述键和焊盘的元件安装区域上配置了的Ag镀膜。
5.如权利要求1中所述的半导体器件，其特征在于：
上述应力缓冲部件是形成在上述键和焊盘的元件安装区域的内部的多个空隙部。
6.如权利要求1中所述的半导体器件，其特征在于：
上述应力缓冲部件是纵向和横向的平面尺寸比上述半导体元件大且比上述键和焊盘小的薄板。
7.如权利要求1中所述的半导体器件，其特征在于：
上述以Sn-Sb-Ag-Cu为主要构成元素的合金的组成满足43wt％≤Sb/(Sn+Sb)≤48wt％且15wt％≤(Ag+Cu)≤25wt％的条件，进而，上述以Bi-Ag-Sb为主要构成元素的合金的组成满足5wt％≤Ag/(Bi+Ag)≤25wt％且5wt％≤Sb≤20wt％的条件。
8.如权利要求1中所述的半导体器件，其特征在于：
在上述半导体元件的上述主面上形成了晶体管元件的电路。
9.如权利要求1中所述的半导体器件，其特征在于：
装入了多个上述半导体元件。
10.一种半导体器件，具有纵型的半导体元件、与上述半导体元件的背面的电极接合的Cu合金的键和焊盘、与上述半导体元件的电路一侧的主电极电连接的Cu合金的第1引线、与上述半导体元件的电路一侧的控制电极电连接的Cu合金的第2引线以及覆盖上述半导体元件、上述键和焊盘和上述第1和第2引线的一部分的树脂制的密封体，其特征在于：
在上述键和焊盘与上述半导体元件之间配置其热膨胀、屈服应力或弹性率比上述Cu合金的热膨胀、屈服应力或弹性率低的应力缓冲部件，利用固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu为主要构成元素的合金和以Bi-Ag-Sb为主要构成元素的合金中的任一种接合材料接合了上述半导体元件与上述应力缓冲部件。
11.如权利要求10中所述的半导体器件，其特征在于：
上述应力缓冲部件是由热膨胀率为8～12ppm/K的复合材料构成的薄板。
12.如权利要求10中所述的半导体器件，其特征在于：
上述应力缓冲部件是在上述键和焊盘的元件安装区域上配置了的Ag镀膜。
13.如权利要求10中所述的半导体器件，其特征在于：
上述应力缓冲部件是形成在上述键和焊盘的元件安装区域的内部的多个空隙部。
14.如权利要求10中所述的半导体器件，其特征在于：
上述应力缓冲部件是纵向和横向的平面尺寸比上述半导体元件大且比上述键和焊盘小的薄板。
15.如权利要求10中所述的半导体器件，其特征在于：
上述以Sn-Sb-Ag-Cu为主要构成元素的合金的组成满足43wt％≤Sb/(Sn+Sb)≤48wt％且15wt％≤(Ag+Cu)≤25wt％的条件，进而，上述以Bi-Ag-Sb为主要构成元素的合金的组成满足5wt％≤Ag/(Bi+Ag)≤25wt％且5wt％≤Sb≤20wt％的条件。
16.一种半导体器件的制造方法，该半导体器件具有半导体元件、与上述半导体元件的背面的电极接合的Cu合金的键和焊盘、与上述半导体元件的电极电连接的Cu合金的引线以及覆盖上述半导体元件、上述键和焊盘和上述引线的一部分的树脂制的密封体，该制造方法的特征在于，具有下述工序：
(a)准备具有上述键和焊盘和上述引线的引线框架的工序；
(b)在上述引线框架的上述键和焊盘上供给由膏状或粒状构成且不含铅的焊锡并使其熔融的工序；
(c)在上述焊锡上配置其热膨胀、屈服应力或弹性率比上述Cu合金的热膨胀、屈服应力或弹性率低的应力缓冲板并在其后进行上述应力缓冲板的加压和摩擦来固定粘接上述应力缓冲板的工序；
(d)在上述应力缓冲板上供给由膏状或粒状构成且不含铅的焊锡并使其熔融的工序；
(e)在上述(d)工序中被供给了的上述焊锡上配置上述半导体元件并在其后进行上述半导体元件的加压和摩擦来固定粘接上述半导体元件的工序；
(f)电连接上述半导体元件的上述电极与上述引线框架的上述引线的工序；
(g)进行树脂模塑以便覆盖上述半导体元件、上述键和焊盘和上述引线的一部分来形成上述密封体的工序；以及
(h)从上述引线框架切断分离从上述密封体突出的上述引线的工序。
17.如权利要求16中所述的半导体器件的制造方法，其特征在于：
使用固相温度大于等于270℃且液相温度小于等于400℃的以Sn-Sb-Ag-Cu为主要构成元素的合金和以Bi-Ag-Sb为主要构成元素的合金中的任一种接合材料作为上述不含铅的焊锡。
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