CN110957290A - 包括包含化合物sn/sb的焊料化合物的半导体器件 - Google Patents

包括包含化合物sn/sb的焊料化合物的半导体器件 Download PDF

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CN110957290A
CN110957290A CN201910922030.0A CN201910922030A CN110957290A CN 110957290 A CN110957290 A CN 110957290A CN 201910922030 A CN201910922030 A CN 201910922030A CN 110957290 A CN110957290 A CN 110957290A
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layer
semiconductor device
contact member
solder
die
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CN201910922030.0A
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T·贝伦斯
A·海因里希
E·纳佩特施尼格
B·魏德甘斯
C·维勒
C·杨
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Infineon Technologies AG
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Infineon Technologies AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
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    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
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Abstract

本发明公开了半导体器件(10；20)，其包括：半导体管芯，该半导体管芯包括第一表面和与第一表面相对的第二表面；设置在半导体管芯的第一表面上的第一金属化层；设置在第一金属化层上的第一焊料层，其中，第一焊料层包含化合物Sn/Sb；以及包括基于Cu的基础主体和设置在基于Cu的基础主体的主表面上的基于Ni的层的第一接触构件，其中，第一接触构件利用所述基于Ni的层连接到第一焊料层。

Description

包括包含化合物SN/SB的焊料化合物的半导体器件
技术领域
本公开涉及半导体器件、电子器件以及用于制造半导体器件的方法。
背景技术
欧盟已经决定在不久的将来禁止使用危害环境的物质。这些决定是针对报废车辆ELV和电气电子设备(RoHS，限制电气电子设备中的(某些)有害物质(的使用))而做出的，并指出应当禁止诸如铅的有害物质。尤其对于功率应用而言，半导体管芯和夹具当前是利用基于高Pb的软焊膏来焊接的。由于EU希望禁止使用Pb，所以必须要开发至少与基于高Pb的焊膏系统一样好的替代管芯和夹具附接系统。
发明内容
本公开的第一方面涉及一种半导体器件。根据第一方面的半导体器件包括：包括第一表面和与第一表面相对的第二表面的半导体管芯；设置于半导体管芯的第一表面上的第一金属化层；设置于第一金属化层上的第一焊料层，第一焊料层包含化合物Sn/Sb；以及包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的第一接触构件，其中第一接触构件利用基于Ni的层连接到第一焊料层。
根据第一方面的半导体器件的实施例，焊料层还包括Ni/Sb相。根据其另一实施例，焊料包括一个或多个其它相，其中Ni/Sb相是主要相。一个或多个其它相可以是Ni/Sn相或者不同材料组分的两个或三个Ni/Sn相。
根据第一方面的半导体器件的实施例，焊料层的化合物Sn/Sb没有Pb。
根据第一方面的半导体器件的实施例，化合物Sn/Sb的材料组分使得所述化合物中的Sb的比例在从17％到90％的范围中。可以提供这样的比例，以便达到高于270℃的焊料材料的熔化温度。
根据第一方面的半导体器件的实施例，除了Sb的比例之外，所述材料组分还由Sn或Sn与其它材料构成，其中，Sn是主要的。其它材料可以包括Ag、Au、Pt、Cu、Ni和Pd中的一种或多种。
根据第一方面的半导体器件的实施例，化合物Sn/Sb的材料组分使得化合物Sn/Sb的熔化温度高于270℃。如上所述，例如，这可以通过在从17％到90％的范围内调节沉积于半导体管芯上的Sb/Sn焊料材料中的Sn的比例来实现。在第二级焊接期间，需要焊料材料的最低熔化温度为270℃。
根据第一方面的半导体器件的实施例，基于Ni的层的厚度在从100nm到7μm的范围内。
根据第一方面的半导体器件的实施例，接触构件由引线框架、夹具、直接接合的铜、或活性金属钎焊构成。
根据第一方面的半导体器件的实施例，接触构件的厚度在从100μm到5mm的范围内。
根据第一方面的半导体器件的实施例，第一金属化层包括两个或更多层的堆叠体。所述层可以包括Ti层、NiV层、NiP层、Ag层或Al层中的一者或多者。
根据第一方面的半导体器件的实施例，半导体管芯是功率管芯、晶体管管芯、功率晶体管管芯、垂直晶体管管芯、IGBT管芯、二极管管芯、或者包括垂直结构并包括处于两个相对主表面上的接触焊盘的任何其它管芯中的一个或多个。
根据第一方面的半导体器件的实施例，半导体器件还包括：设置于半导体管芯的第二表面上的第二金属化层；设置于第二金属化层上的第二焊料层，第二焊料层包含化合物Sn/Sb；包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的第二接触构件，其中第二接触构件利用基于Ni的层连接到第二焊料层。在这样的实施例中，半导体管芯可以由上文所述的半导体管芯类型中的一种或多种构成。
根据第一方面的半导体器件的实施例，第二接触构件是夹具、直接接合的铜、活性金属钎焊、或散热器中的一个或多个。
根据第一方面的半导体器件的实施例，其中第一接触构件是引线框架，并且第二接触构件是夹具。
本公开的第二方面涉及一种半导体器件。根据第二方面的半导体器件包括：包括第一主表面和与第一主表面相对的第二主表面的半导体芯片；包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的第一接触构件；以及包含化合物Sn/Sb并设置于半导体芯片和基于Ni的层之间的焊料化合物。
第二方面的半导体器件的半导体芯片可以由包括第一表面和与第一表面相对的第二表面的半导体管芯、以及设置于半导体管芯的第一表面上的第一金属化层构成，在这种情况下，第一焊料层设置于第一金属化层上。
第二方面的半导体器件的其它实施例可以利用第一方面的半导体器件的实施例或通过增加如下文进一步所述的半导体器件的实施例中所述的一个或多个特征来形成。
本公开的第三方面涉及一种半导体器件。根据第三方面的半导体器件包括：包括基础主体和设置于基础主体的主表面上的金属化层的电子部件；设置于第一金属化层上的焊料层，该焊料层包含Ni/Sb相；以及包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的接触构件，其中接触构件利用基于Ni的层连接到焊料层。
根据第三方面的半导体器件的实施例，焊料层包含化合物Sn/Sb。根据该实施例，执行焊接工艺，以使得Sn/Sb焊料材料不被完全转换成Ni/Sb和其它金属间相。根据另一实施例，焊料层不包含化合物Sn/Sb，在这种情况下，执行焊接工艺，以使得Sn/Sb焊料材料被完全转换成Ni/Sb和其它金属间相。
第三方面的半导体器件的其它实施例可以利用第一或第二方面之一的半导体器件的实施例或通过增加如下文进一步所述的半导体器件的实施例中所述的一个或多个特征来形成。
本公开的第四方面涉及一种用于制造半导体器件的方法。根据第四方面的方法包括：提供包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的接触构件；提供半导体管芯，该半导体管芯包括第一表面和与第一表面相对的第二表面、以及设置于半导体管芯的第一表面上的金属化层；在半导体管芯的金属化层或接触构件的基于Ni的层中的一个或多个上施加焊料材料，该焊料材料基于化合物Sn/Sb；向接触构件上布置半导体管芯，使得焊接材料设置在它们之间；执行焊接工艺，特别是回流工艺，并且由此将焊料材料转换成焊料层并将接触构件与半导体管芯连接。
根据依据第四方面的方法的实施例，执行回流工艺包括产生Ni/Sb相以及一个或多个其它相(如果有的话)(参见下一段)。根据其实施例，执行回流工艺，以使得所产生的焊料层仍然还包含化合物Sn/Sb。根据另一实施例，执行回流工艺，以使得所产生的焊料层不包含化合物Sn/Sb。
根据依据第四方面的方法的实施例，执行回流工艺包括产生Ni/Sb相以及一个或多个其它相，其中Ni/Sb相是主要相。一个或多个其它相可以包括Ni/Sn相或者不同材料组分的两个或更多Ni/Sn相。
根据依据第四方面的方法的实施例，在半导体管芯和接触构件两者上施加焊料材料，其中可以使用相同或不同种类的焊料材料。
根据依据第四方面的方法的实施例，以焊膏的形式施加焊料材料。可以通过分配或印刷到半导体管芯或接触构件上来施加焊膏。
根据依据第四方面的方法的实施例，提供半导体管芯，该半导体管芯具有处于其第一和第二主表面上的第一和第二金属化层，并且在利用其第一表面将半导体管芯布置到第一接触构件上之后，向半导体管芯的第二表面上施加焊料材料，在第二表面上方布置第二接触构件，以使得焊料材料设置于其间，接着进行回流工艺，如上文所述。利用该实施例，可以制造出如图2中所示的器件。
第四方面的方法的其它实施例可以利用第一到第三方面之一的半导体器件的实施例或通过增加如下文进一步所述的半导体器件的实施例中所述的一个或多个特征来形成。
附图说明
附图被包括以提供对各方面的进一步理解，并且附图被并入本说明书并构成本说明书的一部分。附图示出了各方面，并与说明书一起用以解释各方面的原理。各方面的很多期望的优点和其它方面将容易理解，因为通过参考以下具体实施方式，它们变得更好理解。附图的元素未必相对于彼此成比例。类似的附图标记可以指示对应的类似部分。
图1示出了根据第一到第三方面中的一者或多者的半导体器件的示例的示意性横截面图，该半导体器件利用其主表面之一经由包含化合物Sn/Sb的焊料层而连接到接触元件。
图2示出了根据第一到第三方面中的一者或多者的半导体器件的示例的示意性横截面图，该半导体器件利用其主表面中的第一主表面经由包含化合物Sn/Sb的焊料层而连接到引线框架元件，并且利用其主表面中的第二主表面经由包含化合物Sn/Sb的焊料层而连接到夹具。
图3示出了根据第四方面的用于制造半导体器件的方法的流程图的示例，具体而言，该方法包括在半导体管芯上设置焊料材料，该焊料材料基于化合物Sn/Sb。
图4包括图4A到图4F，示出了中间产品和最终产品的示意性横截面表示，以例示根据第四方面的制造半导体器件的方法的示例，其中该方法示出了如图2中所示的半导体器件的制造。
图5示出了Sn、Sb和Ni的三元合金相图的液相投影的示例。
图6包括图6A和图6B，示出了在实际(A)和示意性表示(B)中的SEM-EDX测量，该测量示出了焊料层中的金属间Ni/Sb相的形成。
具体实施方式
在以下具体实施方式中，参考了附图，在附图中通过例示的方式示出了可以实践本公开的具体方面。就这一点而言，诸如“顶部”、“底部”、“前”、“后”等的方向性术语可以是参考所描述的附图的取向而使用的。由于所描述的器件的部件可以被定位在许多不同的取向上，所以方向性术语可以用于例示的目的，而非进行限制。可以利用其它方面并且可以进行结构或逻辑改变而不脱离本公开的构思。因此，以下具体实施方式不应该被理解为限制性的意义，并且本公开的构思由所附权利要求限定。
图1示出了根据第一到第三方面中的一者或多者的半导体器件的示例。图1的半导体器件10包括半导体管芯1，该半导体管芯1包括第一下主表面和与第一表面相对的第二上主表面。半导体器件10包括金属化层2，其设置于半导体管芯1的第一表面上。金属化层2可以与设置于半导体管芯中的电子器件或电路连接，并且可以包括一个或多个金属层。
图1的半导体器件10还包括设置于金属化层2上的焊料层3，其中焊料层3包含化合物Sn/Sb。焊料层3还可以包含Ni/Sb相和可能的其它相，特别是Ni/Sn相，其中Ni/Sb是主要的。
图1的半导体器件10还包括接触构件4，接触构件4包括基于Cu的基础主体4a和设置于基于Cu的基础主体4a的主表面上的基于Ni的层4b，其中接触构件4利用基于Ni的层4b连接到焊料层3。
图2示出了根据第一到第三方面中的一者或多者的半导体器件的示例。
图2的半导体器件20包括：半导体管芯11，半导体管芯11包括第一表面和与第一表面相对的第二表面；以及设置于半导体管芯11的第一表面上的第一金属化层12；以及设置于半导体管芯11的第二表面上的第二金属化层22。半导体器件20还包括设置于第一金属化层12上的第一焊料层13和设置于第二金属化层22上的第二焊料层23，其中第一和第二焊料层13和23都包含化合物Sn/Sb。半导体器件20还包括第一接触构件4，第一接触构件4包括基于Cu的基础主体4a和设置于基于Cu的基础主体4a的主表面上的基于Ni的层4b，其中，第一接触构件4利用基于Ni的层4b连接到第一焊料层3。半导体器件20还包括第二接触构件24，第二接触构件24包括基于Cu的基础主体24a和设置于基于Cu的基础主体24a的主表面上的基于Ni的层24b，其中，第二接触构件24利用基于Ni的层24b连接到第二焊料层23。
图3示出了用于例示根据本公开的第四方面的用于制造半导体器件的方法的流程图。
如图3所示，方法30包括：提供包括基于Cu的基础主体和设置于基于Cu的基础主体的主表面上的基于Ni的层的接触构件(31)；提供包括第一表面和与第一表面相对的第二表面的半导体管芯、以及设置于半导体管芯的第一表面上的金属化层(32)；在半导体管芯的金属化层或接触构件的基于Ni的层中的一个或多个上施加焊料材料，该焊料材料基于化合物Sn/Sb(33)；向接触构件上布置半导体管芯，从而在它们之间设置焊接材料(34)；以及执行焊接工艺，特别是回流工艺，并且由此将焊料材料转换成焊料层并将接触构件与半导体管芯连接(35)。
如上所述，可以向半导体管芯和接触构件之一或两者上施加焊料材料。可以通过分配或印刷以焊膏的形式施加焊料材料。
在向接触构件上放置半导体管芯之后，可以通过在回流炉或烘炉中以特定温度曲线加热堆叠体来执行回流工艺，该特定温度曲线与所提及的材料和厚度相配。之后遵循标准生产流程。
图4包括图4A到4F，并且示出了中间产品的横截面表示，以用于例示根据第四方面的用于制造半导体器件的示例性方法。
如图4A所示，提供引线框架44，引线框架44包括基于Cu的基础主体44A以及设置于基础主体44A的主表面上的基于Ni的层44B。基于Cu的基础主体44A可以由纯Cu或Cu与另一种金属的合金构成，并且还可以包括一些掺杂。
如图4B所示，提供半导体芯片41，半导体芯片41包括半导体管芯41A、设置于半导体管芯41A的第一主表面上的第一金属化层41B、以及设置于半导体管芯41A的第二主表面上的第二金属化层41C。半导体管芯41A可以包括功率管芯、晶体管管芯、功率晶体管管芯、垂直晶体管管芯、IGBT管芯、二极管管芯、或包括垂直结构并包括处于两个相对主表面上的接触焊盘的任何其它管芯中的一个或多个。
如图4C所示，第一焊料材料43通过分配或印刷被施加到半导体管芯41A的第一金属化层41B上。
如图4D所示，半导体芯片41被放置到引线框架44上，即放置到引线框架44的基于Ni的层44B上，使得第一焊料材料43设置于它们之间。
如图4E所示，第二焊料材料46被施加到半导体芯片41上，即施加到第二金属化层41C上。第二焊料材料46可以被分配或印刷到与第一焊料材料43相同或不同的上表面上。
如图4F所示，基于Cu的夹具47被放置到第二焊料材料46上。夹具47可以由纯Cu或Cu与另一种金属的合金构成，并且还可以包括一些掺杂。
之后，通过在回流炉或烘炉中以与焊料材料及其厚度相配的特定温度曲线加热堆叠体来执行回流工艺。由此，焊料材料被转换成相应的焊料层，并且半导体芯片41被连接到引线框架44和夹具47。
图5示出了Sn、Sb和Ni的三元合金相的液相投影图的示例。
在图中可以看出，在没有Sb的情况下，Sn将至少部分形成与Ni接触的Ni3Sn4相，已知这种相是相当易碎的。Sb含量避免了形成该易碎相。从该图可以推导出，需要最小量的Sb以迫使形成六方形Ni/Sb相，而不是单斜Ni3Sn4相。从实验证据发现，Sb必须要超过特定量，如上文已经阐述的。在三元合金相图中也可以看到交线，但由于这是针对平衡状态计算的，并且焊接工艺通常处于不平衡状态中，因而焊料材料中所需的Sb量比能够从热力学计算推导出的量更高。
图5的图的细节如下。
从最低温度T(min)＝673K到最高温度T(max)＝2561.7K，人们可以认识到与液体的以下四相交点：
1:Ni3Sn2_固体/Ni3Sn_固体/NiSb_固体
2:FCC_A1/Ni3Sn_固体/NiSb_固体
3:Ni3Sn2_固体/Ni3Sn4_固体/Sn|1(液体)
4:Ni3Sn2_固体/Ni3Sn4_固体/NiSb_固体
其中
A＝Sn，B＝Ni，C＝Sb
并且
Figure BDA0002217884040000081
图6示出了SEM-EDX测量，其示出了焊料层中的金属间Ni/Sb相的形成。
还可以看出，根据合金相图，即使在直接邻近Ni层处也未形成任何易碎的Ni3Sn4相。
尽管已经关于一个或多个实施方式示出并描述了本公开，但本领域的技术人员至少部分基于对本说明书和附图的阅读和理解，将想到等价的替代和修改。本公开包括所有这样的修改和更改，并且仅受以下权利要求的构思的限制。具体而言，至于由上述部件(例如，元件、资源等)执行的各种功能，除非另行指出，否则用于描述这种部件的术语旨在对应于执行所述部件的指定功能的任何部件(例如，其在功能上等价)，尽管在结构上不等价于执行本文例示的本公开的示例性实施方式中的功能的所公开的结构。此外，尽管可能已经关于几种实施方式中的仅一种公开了本公开的特定特征，但可以在对于任何给定或特定应用而言期望并且有利时，将这样的特征与其它实施方式的一个或多个其它特征组合。

Claims (19)

1.一种半导体器件(10；20)，包括：
半导体管芯(1；11)，其包括第一表面和与所述第一表面相对的第二表面；
第一金属化层(2；12)，其设置在所述半导体管芯(1；11)的所述第一表面上；
第一焊料层(3；13)，其设置在所述第一金属化层(2；12)上，其中，所述第一焊料层(3；13)包含所述化合物Sn/Sb；以及
第一接触构件(4；14)，其包括基于Cu的基础主体(4a；14a)和设置在所述基于Cu的基础主体(4a；14a)的主表面上的基于Ni的层(4b；14b)；
其中，所述第一接触构件(4；14)利用所述基于Ni的层(4b；14b)连接到所述第一焊料层(3；13)。
2.根据权利要求1所述的半导体器件(10；20)，其中，
所述焊料层(3；13)还包括Ni/Sb相。
3.根据权利要求1或2所述的半导体器件(10；20)，其中，
所述焊料层(3；13)的所述化合物Sn/Sb没有Pb。
4.根据权利要求1到3中的任一项所述的半导体器件(10；20)，其中
所述化合物Sn/Sb的材料组分使得所述化合物中的Sb的比例在从17％到90％的范围内。
5.根据权利要求4所述的半导体器件(10；20)，其中，
除了Sb的比例之外，所述材料组分还由Sn或Sn与其它材料构成，其中，Sn是主要的。
6.根据权利要求5所述的半导体器件(10；20)，其中，
所述其它材料包括Ag、Au、Pt、Cu、Ni和Pd中的一种或多种。
7.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述化合物Sn/Sb的材料组分使得所述化合物Sn/Sb的熔化温度高于270℃。
8.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述基于Ni的层(4b；14b)的厚度在从100nm到7μm的范围内。
9.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述接触构件(4；14)由引线框架或夹具构成。
10.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述接触构件(4；14)的厚度在从100μm到5mm的范围内。
11.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述第一金属化层(2；12)包括两个或更多层的堆叠体。
12.根据前述权利要求中的任一项所述的半导体器件(10；20)，其中，
所述半导体管芯(1；11)是功率管芯、晶体管管芯、功率晶体管管芯、垂直晶体管管芯、IGBT管芯或二极管管芯中的一种或多种。
13.根据前述权利要求中的任一项所述的半导体器件(20)，还包括：
第二金属化层(22)，其设置在所述半导体管芯(11)的所述第二表面上；
第二焊料层(23)，其设置在所述第二金属化层(22)上，所述第二焊料层(23)包含化合物Sn/Sb；以及
第二接触构件(24)，其包括基于Cu的基础主体(24a)和设置在所述基于Cu的基础主体(24a)的主表面上的基于Ni的层(24b)；
其中，所述第二接触构件(24)利用所述基于Ni的层(24b)连接到所述第二焊料层(23)。
14.根据权利要求13所述的半导体器件(20)，其中，
所述第二接触构件(24)是夹具、直接接合的铜、活性金属钎焊或散热器中的一种或多种。
15.根据权利要求13或14所述的半导体器件(20)，其中，
所述第一接触构件(14)是引线框架，并且所述第二接触构件(24)是夹具。
16.一种半导体器件(10；20)，包括：
半导体芯片(1，2；11，12)，其包括第一主表面和与所述第一主表面相对的第二主表面；
第一接触构件(4；14)，其包括基于Cu的基础主体(4a；14a)和设置在所述基于Cu的基础主体(4a；14a)的主表面上的基于Ni的层(4b；14b)；以及
焊料化合物(3；13)，其包含所述化合物Sn/Sb并被设置在所述半导体芯片(1，2；11，12)和所述基于Ni的层(4b；14b)之间。
17.一种电子器件(10；20)，包括：
电子部件(1，2；11，12)，其包括基础主体(1；11)和设置在所述基础主体(1；11)的主表面上的第一金属化层(2；12)；
第一焊料层(3；13)，其设置在所述第一金属化层(2；12)上，所述第一焊料层(3；13)包含Ni/Sb相；以及
第一接触构件(4；14)，其包括基于Cu的基础主体(4a；14a)和设置在所述基于Cu的基础主体(4a；14a)的主表面上的基于Ni的层(4b；14b)；
其中，所述第一接触构件(4；14)利用所述基于Ni的层(4b；14b)连接到所述第一焊料层(3；13)。
18.一种用于制造半导体器件的方法，所述方法包括：
提供包括基于Cu的基础主体和设置在所述基于Cu的基础主体的主表面上的基于Ni的层的接触构件；
提供包括第一表面和与所述第一表面相对的第二表面的半导体管芯、以及设置在所述半导体管芯的所述第一表面上的金属化层；
在所述半导体管芯的所述金属化层或所述接触构件的所述基于Ni的层中的一者或多者上施加焊料材料，所述焊料材料基于化合物Sn/Sb；以及
将所述半导体管芯布置到所述接触构件上，使得所述焊料材料设置在所述半导体管芯和所述接触构件之间；以及
执行焊接工艺，并且由此将所述焊料材料转换成焊料层并将所述接触构件与所述半导体管芯连接。
19.根据权利要求18所述的方法，其中，
执行所述回流工艺包括产生Ni/Sb相。
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