CN1774823B - 带有有机层的光活性组件 - Google Patents
带有有机层的光活性组件 Download PDFInfo
- Publication number
- CN1774823B CN1774823B CN2004800072080A CN200480007208A CN1774823B CN 1774823 B CN1774823 B CN 1774823B CN 2004800072080 A CN2004800072080 A CN 2004800072080A CN 200480007208 A CN200480007208 A CN 200480007208A CN 1774823 B CN1774823 B CN 1774823B
- Authority
- CN
- China
- Prior art keywords
- layer
- photoactive
- photoactive component
- layers
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012044 organic layer Substances 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 265
- 230000007704 transition Effects 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000001965 increasing effect Effects 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 230000005525 hole transport Effects 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 8
- 239000011147 inorganic material Substances 0.000 claims 8
- 238000000862 absorption spectrum Methods 0.000 claims 7
- 125000001424 substituent group Chemical group 0.000 claims 6
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 4
- 229920001940 conductive polymer Polymers 0.000 claims 3
- 230000000737 periodic effect Effects 0.000 claims 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 3
- 150000003839 salts Chemical class 0.000 claims 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910003472 fullerene Inorganic materials 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 239000012780 transparent material Substances 0.000 claims 2
- CHBDXRNMDNRJJC-UHFFFAOYSA-N 1,2,3-triphenylbenzene Chemical class C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 CHBDXRNMDNRJJC-UHFFFAOYSA-N 0.000 claims 1
- UTQUFKAPHZAOQK-UHFFFAOYSA-N 1-n,1-n,2-n,2-n,3-n,3-n,4-n,4-n-octakis-phenylbenzene-1,2,3,4-tetramine Chemical class C1=CC=CC=C1N(C=1C(=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 UTQUFKAPHZAOQK-UHFFFAOYSA-N 0.000 claims 1
- DKZYLXIFCGMAOV-UHFFFAOYSA-N 1h-imidazole;naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CNC=N1.C1=CNC=N1.C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 DKZYLXIFCGMAOV-UHFFFAOYSA-N 0.000 claims 1
- GSOFREOFMHUMMZ-UHFFFAOYSA-N 3,4-dicarbamoylnaphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=N)C(C(=N)O)=C(C(O)=O)C(C(O)=O)=C21 GSOFREOFMHUMMZ-UHFFFAOYSA-N 0.000 claims 1
- JNGDCMHTNXRQQD-UHFFFAOYSA-N 3,6-dioxocyclohexa-1,4-diene-1,2,4,5-tetracarbonitrile Chemical compound O=C1C(C#N)=C(C#N)C(=O)C(C#N)=C1C#N JNGDCMHTNXRQQD-UHFFFAOYSA-N 0.000 claims 1
- 229920000144 PEDOT:PSS Polymers 0.000 claims 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 claims 1
- 150000004866 oxadiazoles Chemical class 0.000 claims 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims 1
- 150000004053 quinones Chemical class 0.000 claims 1
- 125000003003 spiro group Chemical group 0.000 claims 1
- BIGSSBUECAXJBO-UHFFFAOYSA-N terrylene Chemical group C12=C3C4=CC=C2C(C=25)=CC=CC5=CC=CC=2C1=CC=C3C1=CC=CC2=CC=CC4=C21 BIGSSBUECAXJBO-UHFFFAOYSA-N 0.000 claims 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 claims 1
- 125000006617 triphenylamine group Chemical group 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 21
- 238000005215 recombination Methods 0.000 abstract description 18
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000006862 quantum yield reaction Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 description 44
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10313232 | 2003-03-19 | ||
| DE10313232.5 | 2003-03-19 | ||
| PCT/DE2004/000574 WO2004083958A2 (de) | 2003-03-19 | 2004-03-19 | Photoaktives bauelement mit organischen schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1774823A CN1774823A (zh) | 2006-05-17 |
| CN1774823B true CN1774823B (zh) | 2010-09-08 |
Family
ID=32921125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004800072080A Expired - Lifetime CN1774823B (zh) | 2003-03-19 | 2004-03-19 | 带有有机层的光活性组件 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7675057B2 (enExample) |
| EP (1) | EP1611484B1 (enExample) |
| JP (3) | JP2006520533A (enExample) |
| KR (1) | KR100977905B1 (enExample) |
| CN (1) | CN1774823B (enExample) |
| AU (1) | AU2004221377B2 (enExample) |
| BR (1) | BRPI0408493B1 (enExample) |
| DE (1) | DE102004014046B4 (enExample) |
| IN (1) | IN2005MU01022A (enExample) |
| WO (1) | WO2004083958A2 (enExample) |
Families Citing this family (151)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100026176A1 (en) | 2002-03-28 | 2010-02-04 | Jan Blochwitz-Nomith | Transparent, Thermally Stable Light-Emitting Component Having Organic Layers |
| DE10326546A1 (de) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften |
| US7196366B2 (en) * | 2004-08-05 | 2007-03-27 | The Trustees Of Princeton University | Stacked organic photosensitive devices |
| CN101120458B (zh) * | 2004-12-02 | 2010-10-06 | 普林斯顿大学理事会 | 采用孤立的光合作用复合物的固态光敏器件 |
| DE102005010978A1 (de) | 2005-03-04 | 2006-09-07 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
| JP2006278584A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Printing Co Ltd | 有機薄膜太陽電池素子 |
| EP1786050B1 (de) * | 2005-11-10 | 2010-06-23 | Novaled AG | Dotiertes organisches Halbleitermaterial |
| US7919010B2 (en) * | 2005-12-22 | 2011-04-05 | Novaled Ag | Doped organic semiconductor material |
| WO2007095386A2 (en) * | 2006-02-13 | 2007-08-23 | Solexant Corporation | Photovoltaic device with nanostructured layers |
| TW200802903A (en) * | 2006-02-16 | 2008-01-01 | Solexant Corp | Nanoparticle sensitized nanostructured solar cells |
| CA2642678A1 (en) * | 2006-02-17 | 2007-08-30 | Solexant Corporation | Nanostructured electroluminescent device and display |
| ATE394800T1 (de) * | 2006-03-21 | 2008-05-15 | Novaled Ag | Heterocyclisches radikal oder diradikal, deren dimere, oligomere, polymere, dispiroverbindungen und polycyclen, deren verwendung, organisches halbleitendes material sowie elektronisches bauelement |
| EP1837927A1 (de) * | 2006-03-22 | 2007-09-26 | Novaled AG | Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern |
| CA2644629A1 (en) * | 2006-03-23 | 2008-05-08 | Solexant Corporation | Photovoltaic device containing nanoparticle sensitized carbon nanotubes |
| WO2007121252A2 (en) * | 2006-04-11 | 2007-10-25 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
| US20080001141A1 (en) * | 2006-06-28 | 2008-01-03 | Unidym, Inc. | Doped Transparent and Conducting Nanostructure Networks |
| EP2089910A4 (en) * | 2006-12-06 | 2012-12-26 | Solexant Corp | NANO-PHOTOVOLTAIC ARRANGEMENT WITH IMPROVED QUANTITY EFFICIENCY |
| DE102007009995A1 (de) * | 2007-03-01 | 2008-09-04 | Hahn-Meitner-Institut Berlin Gmbh | Organische Solarzelle |
| DE102007012794B3 (de) | 2007-03-16 | 2008-06-19 | Novaled Ag | Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial |
| DE102007018456B4 (de) * | 2007-04-19 | 2022-02-24 | Novaled Gmbh | Verwendung von Hauptgruppenelementhalogeniden und/oder -pseudohalogeniden, organisches halbleitendes Matrixmaterial, elektronische und optoelektronische Bauelemente |
| EP3457451B1 (de) | 2007-04-30 | 2019-07-17 | Novaled GmbH | Die verwendung von oxokohlenstoff-, pseudooxokohlenstoff- und radialenverbindungen |
| EP1990847B1 (de) * | 2007-05-10 | 2018-06-20 | Novaled GmbH | Verwendung von chinoiden Bisimidazolen und deren Derivaten als Dotand zur Dotierung eines organischen halbleitenden Matrixmaterials |
| DE102007031220B4 (de) | 2007-07-04 | 2022-04-28 | Novaled Gmbh | Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen |
| WO2009013258A1 (de) | 2007-07-23 | 2009-01-29 | Basf Se | Verwendung von rylenderivaten als aktive komponenten in solarzellen und photodetektoren |
| US7906724B2 (en) * | 2007-07-31 | 2011-03-15 | Agency For Science, Technology And Research | N-type conjugated materials based on 2-vinyl-4,5-dicyanoimidazoles and their use in organic photovoltaics |
| TWI452703B (zh) * | 2007-11-16 | 2014-09-11 | 半導體能源研究所股份有限公司 | 光電轉換裝置及其製造方法 |
| US8057712B2 (en) * | 2008-04-29 | 2011-11-15 | Novaled Ag | Radialene compounds and their use |
| KR20090123540A (ko) * | 2008-05-28 | 2009-12-02 | 삼성전자주식회사 | 유기 광전 변환막, 이를 구비하는 광전 변환 소자 및이미지 센서 |
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- 2004-03-19 EP EP04721821.9A patent/EP1611484B1/de not_active Expired - Lifetime
- 2004-03-19 KR KR1020057017391A patent/KR100977905B1/ko not_active Expired - Lifetime
- 2004-03-19 WO PCT/DE2004/000574 patent/WO2004083958A2/de not_active Ceased
- 2004-03-19 US US10/549,775 patent/US7675057B2/en active Active
- 2004-03-19 DE DE102004014046A patent/DE102004014046B4/de not_active Expired - Lifetime
- 2004-03-19 CN CN2004800072080A patent/CN1774823B/zh not_active Expired - Lifetime
- 2004-03-19 JP JP2006504268A patent/JP2006520533A/ja active Pending
- 2004-03-19 AU AU2004221377A patent/AU2004221377B2/en not_active Expired
- 2004-03-19 BR BRPI0408493A patent/BRPI0408493B1/pt active IP Right Grant
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2005
- 2005-09-19 IN IN1022MU2005 patent/IN2005MU01022A/en unknown
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2011
- 2011-08-17 JP JP2011178481A patent/JP2011228752A/ja active Pending
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2014
- 2014-02-21 JP JP2014031439A patent/JP2014090218A/ja active Pending
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| Title |
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| A.Yakimov and S. R. Forrest.High photovoltage multiple-heterojunction organicsolarcellsincorporating interfacial metallic nanoclusters.APPLIED PHYSICS LETTERS80 9.2002,80(9),摘要、第1667页右栏第3-4行, 第1669页左栏第28行至右栏第2行、附图4. * |
| D.Meissner et al.HIGHLY EFFICIENT MOLECULAR ORGANIC SOLARCELLS.16th European Photovoltaic Solar Energy Conference and Exhibition.2000,161-6. * |
| Lucimara Stolz Roman et al.Trapping light in polymer photodiodeswithsoftembossedgratings.ADVANCED MATERIALS12 3.2000,12(3),189-195. * |
| M. Pfeiffer.Controlled p-doping of pigment layersbycosublimation:Basicmechanisms and implications for theiruseinorganicphotovoltaic cells.Solar Energy Materials & Solar Cells63.2000,63第86页第14-16行,摘要. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1774823A (zh) | 2006-05-17 |
| WO2004083958A2 (de) | 2004-09-30 |
| US7675057B2 (en) | 2010-03-09 |
| AU2004221377A1 (en) | 2004-09-30 |
| JP2014090218A (ja) | 2014-05-15 |
| DE102004014046B4 (de) | 2013-04-25 |
| KR100977905B1 (ko) | 2010-08-24 |
| KR20050116147A (ko) | 2005-12-09 |
| EP1611484A2 (de) | 2006-01-04 |
| BRPI0408493B1 (pt) | 2018-09-18 |
| AU2004221377B2 (en) | 2009-07-16 |
| BRPI0408493A (pt) | 2006-04-04 |
| US20070090371A1 (en) | 2007-04-26 |
| WO2004083958A3 (de) | 2005-11-10 |
| JP2011228752A (ja) | 2011-11-10 |
| DE102004014046A1 (de) | 2004-09-30 |
| EP1611484B1 (de) | 2021-11-10 |
| IN2005MU01022A (enExample) | 2006-05-12 |
| JP2006520533A (ja) | 2006-09-07 |
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