CN1729576A - 使用硅化的金属栅极电极以及其形成方法 - Google Patents

使用硅化的金属栅极电极以及其形成方法 Download PDF

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Publication number
CN1729576A
CN1729576A CNA038097842A CN03809784A CN1729576A CN 1729576 A CN1729576 A CN 1729576A CN A038097842 A CNA038097842 A CN A038097842A CN 03809784 A CN03809784 A CN 03809784A CN 1729576 A CN1729576 A CN 1729576A
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CN
China
Prior art keywords
polysilicon body
dielectric
polysilicon
gate
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038097842A
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English (en)
Chinese (zh)
Inventor
W·P·毛萨尔拉
Z·克里沃卡皮奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1729576A publication Critical patent/CN1729576A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA038097842A 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法 Pending CN1729576A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/135,227 US6599831B1 (en) 2002-04-30 2002-04-30 Metal gate electrode using silicidation and method of formation thereof
US10/135,227 2002-04-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011100472901A Division CN102157362B (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法

Publications (1)

Publication Number Publication Date
CN1729576A true CN1729576A (zh) 2006-02-01

Family

ID=27610948

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA038097842A Pending CN1729576A (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法
CN2011100472901A Expired - Lifetime CN102157362B (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011100472901A Expired - Lifetime CN102157362B (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法

Country Status (8)

Country Link
US (2) US6599831B1 (enExample)
EP (1) EP1502305A1 (enExample)
JP (1) JP2005524243A (enExample)
KR (1) KR20040102187A (enExample)
CN (2) CN1729576A (enExample)
AU (1) AU2003231119A1 (enExample)
TW (1) TWI270935B (enExample)
WO (1) WO2003094243A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN101562131B (zh) * 2008-04-15 2012-04-18 和舰科技(苏州)有限公司 栅极结构的制造方法

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JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
US7056782B2 (en) * 2004-02-25 2006-06-06 International Business Machines Corporation CMOS silicide metal gate integration
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JP2007173347A (ja) * 2005-12-20 2007-07-05 Renesas Technology Corp 半導体装置及びその製造方法
US7968947B2 (en) * 2006-01-06 2011-06-28 Nec Corporation Semiconductor device and manufacturing process therefor
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US7297618B1 (en) 2006-07-28 2007-11-20 International Business Machines Corporation Fully silicided gate electrodes and method of making the same
US7875935B2 (en) * 2006-09-20 2011-01-25 Nec Corporation Semiconductor device and method for manufacturing the same
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Publication number Priority date Publication date Assignee Title
CN101562131B (zh) * 2008-04-15 2012-04-18 和舰科技(苏州)有限公司 栅极结构的制造方法

Also Published As

Publication number Publication date
AU2003231119A1 (en) 2003-11-17
WO2003094243A1 (en) 2003-11-13
US6599831B1 (en) 2003-07-29
CN102157362A (zh) 2011-08-17
KR20040102187A (ko) 2004-12-03
EP1502305A1 (en) 2005-02-02
CN102157362B (zh) 2012-05-16
TW200403729A (en) 2004-03-01
TWI270935B (en) 2007-01-11
US6873030B2 (en) 2005-03-29
US20030203609A1 (en) 2003-10-30
JP2005524243A (ja) 2005-08-11

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Open date: 20060201