CN1727179B - 多层金属复合薄膜及其制造方法 - Google Patents
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Abstract
一种具有所定厚度而又无粘合剂的多层金属层压复合薄膜,不用粘合剂将表面形成金属薄膜的高分子薄膜与具有所定厚度的金属箔接合。通过活性化处理高分子薄膜表面形成的金属薄膜复合薄膜上的金属薄膜表面和金属箔表面,然后将上述经活性化处理的金属薄膜表面与金属箔表面压力接合,由此可以得到多层金属层压复合薄膜。
Description
本申请是“东洋钢钣株式会社”提交的、发明名称为“多层金属复合薄膜及其制造方法”、申请号为“01817237.7”、申请日为“2001年10月4日”的发明专利申请的分案申请。
技术领域
本发明涉及一种不用粘合剂层压复合高分子薄膜和金属箔而形成的多层金属复合薄膜及其制造方法。
背景技术
以前,提出了多种在高分子薄膜上层压金属薄膜的金属箔层压复合体。
例如,在以聚对苯二甲酸乙二醇酯和聚酰亚胺为代表的耐热薄膜上生成金属薄膜的金属箔层压复合体,具有优良的机械性能、电性能及耐热特性,被使用在软性电路板等上。
作为在高分子薄膜上层压复合金属箔的方法,有使用粘合剂接合金属箔和高分子薄膜的方法(日本专利特开平11-20786号公报)。
但是,有机粘合剂与薄膜及金属相比,由于热性能差,产生耐热性问题。作为改进此问题的方法,提出了在薄膜上直接形成金属薄膜的方法(日本专利2859330号公报、特开平8-231717号公报、特开平11-207866号公报等)。
上述方法是,通过真空蒸镀、溅射等薄膜生成方法,在薄膜上生成金属薄膜(10~1000nm)后,在进一步要求增加金属箔厚度的情况下,采用电镀等方法增加薄膜厚度,得到厚度大约在1~100μm的金属层压复合体(参照特开平8-231717号公报)。
但是,在采用以前的在薄膜上层压复合金属箔的方法中,作为金属箔,在要求比较厚的情况下,存在时间和成本方面的问题。此外,还存在真空工艺和湿法工艺必须并用等烦杂的工艺问题。
本发明的第一课题是,提供一种具有规定厚度而又无粘合剂的多层金属层压复合薄膜不使用粘合剂而将预先用真空蒸镀、溅射等薄膜生成方法在表面生成金属薄膜的高分子薄膜与具有规定厚度的金属箔接合。
此外,本发明的第二课题是,提供一种连续在高分子薄膜上生成金属薄膜并层压金属箔的多层金属层压复合薄膜的制造方法。
发明内容
本发明的多层金属层压复合薄膜的特征在于:在高分子薄膜表面上生成金属薄膜,形成金属薄膜复合薄膜,上述金属薄膜复合薄膜上的金属薄膜表面与金属箔层合,由此层压复合而成的多层金属层压复合薄膜。
本发明的多层金属层压复合薄膜的制造方法的特征在于:具有在薄膜开卷筒中设置在高分子薄膜表面上生成金属薄膜的金属薄膜复合膜的工序;将金属箔设置在金属箔开卷筒上的工序;从薄膜开卷筒开卷上述金属薄膜复合膜,使金属薄膜复合膜上的金属薄膜面活性化的工序;从金属箔开卷筒开卷上述金属箔,活性化处理金属箔表面的工序;上述经过活性化处理的金属薄膜的表面与金属箔表面压力接合的工序。
本发明的多层金属层压复合薄膜的制造方法的特征在于:具有在薄膜开卷筒中设置高分子薄膜的工序;在金属箔开卷筒中设置金属箔的工序;从薄膜开卷筒开卷上述高分子薄膜,活性化处理薄膜表面,在薄膜表面形成金属薄膜的工序;从金属箔开卷筒开卷上述金属箔,并使金属箔表面活性化的工序;上述经过活性化处理的金属薄膜表面与金属箔表面压力接合的工序。
附图说明
图1是多层金属层压复合薄膜的截面图。
图2是多层金属层压复合薄膜的截面图。
图3是表示制造工序的示意图。
图4是表示制造工序的示意图。
具体实施方式
图1是表示本发明的多层金属层压复合薄膜的截面结构的示意图。
在图1中,高分子薄膜22借助金属薄膜24层压复合在金属箔26上。作为高分子薄膜22的材质,只要是能在薄膜上形成薄膜的材料,不特别限定其种类。可根据本发明的多层金属层压复合薄膜的用途适当选择采用。
例如,本发明的多层金属层压复合薄膜如果是用于软性印刷电路板,作为高分子薄膜的原材料,最好使用聚酰亚胺、聚对苯二甲酸乙二醇酯、聚醚酰亚胺等。
此外,本发明的多层金属层压复合薄膜如是用于高温用途,薄膜原材料也适合采用聚酰亚胺等薄膜。
高分子薄膜22的厚度因用途而异,但是,如果是用作软性印刷电路板,最好采用10~150μm的厚度。但最佳的厚度使用范围在25~75μm。
关于金属薄膜24的材质,只要是与衬底高分子薄膜密合性良好的材质,不特别限定其种类。
例如,高分子薄膜22如果是聚对苯二甲酸乙二醇酯或聚酰亚胺薄膜,作为金属薄膜24,最好采用Ni、Cr、Pd、Zr、Co、Au、Ag、Sn、Cu、Al等。此外,也可以是双层复合上述金属的金属薄膜。另外,也可以采用上述金属的合金作为薄膜。
薄膜的厚度因用途而异,但是,如果是用作软性印刷电路板,最好采用0.01~1μm的厚度,但最佳的厚度使用范围在0.1~0.5μm。
关于金属箔26的材质,例如,可使用铜箔、镍箔、铝箔、铁箔等单层箔,也可以使用上述金属箔的层压复合箔(复合材)、合金箔、轧制箔等。此外,也可以使用在上述各种箔表面实施镀层的镀层箔等。薄膜的厚度因用途而异,但是,如果是用作软性印刷电路板,最好采用3~100μm的厚度,但最佳的厚度使用范围在10~35μm。
此外,在将本发明的多层金属层压复合薄膜用作散热板时,为提高传热性,最好采用厚度在50~1000μm范围内的稍厚的多层金属层压复合薄膜。
下面,说明本发明的多层金属层压复合薄膜的制造方法。首先说明第一制造方法,如图3所示,该方法是在开卷筒62中设置预先在高分子薄膜上形成金属薄膜的金属薄膜复合膜,在真空容器52内,用压力接合装置60压力接合该金属薄膜层压复合膜28和金属箔26。即,利用多层金属层压复合薄膜制造装置50中设置的活性化处理装置70,使在高分子薄膜22表面上预先形成厚约10~1000nm金属薄膜的金属薄膜复合膜28活性化。
此处所述的所谓活性化,是指为提高后续工序中与金属箔的密合性,去除在高分子薄膜上的金属膜表面上附着的金属氧化物、灰尘附着物及油等异物所进行的表面处理。同样,也用活性化装置80活性化处理金属箔26。
活性化处理装置70、80最好采用能进行表面清洁的结构,但在本发明的实施例中,采用溅射刻蚀处理要压力接合材料的各接合面的处理装置。
也就是说,采用溅射刻蚀处理的活性化处理方法,如本申请人先前在特开平1-224184号公报中公开的一样,是在(1)1×101~1×10-2Pa的极低压惰性气体保护中;(2)金属薄膜复合膜28和金属箔26分别作为接地一方的电极A,在与绝缘支持的另一电极B之间附加1~50MHz的交流电,产生辉光放电;(3)而且,在上述辉光放电产生的等离子体中露出的电极辊72、82的面积A分别不足电极74、84的面积B的1/3;(4)利用溅射刻蚀处理等条件下进行活性化处理。这样可有利于使表面高速活性化。
此外,同样也可以采用能使表面高速活性化的离子枪。
下面,说明压力接合上述金属薄膜复合膜28和金属箔26的方法。在多层金属层压复合薄膜制造装置50内,分别活性化处理在高分子薄膜上形成的金属薄膜24的表面和金属箔26的接合面,然后,相互重合经过活性化处理的清洁的接合面,同样用多层金属层压复合薄膜制造装置50内设置的压力接合装置60进行层压接合。为使该压力接合作业不破坏或变形金属箔,在压力接合装置60进行内压力接合时压下率最好设定在0.1%~3%左右。
下面,说明本发明的多层金属层压复合薄膜的第二制造方法。
首先,作为第二制造方法,是将在高分子薄膜22上形成金属薄膜24的薄膜形成装置90设置在真空容器52中、活性化处理装置70后的工序中。
即,如图4所示,用活性化处理装置70预先活性化处理高分子薄膜22的要接合的表面,接着在同一多层金属层压复合薄膜制造装置50内,在高分子薄膜22表面上立即形成金属薄膜24,成为图2所示的金属薄膜复合膜28。
此外,关于要层压复合的金属箔26,采用活性化处理装置80(图3)进行活性化处理,上述金属薄膜复合膜28的金属薄膜24形成面与金属箔26的活性化处理面重合,利用压力接合装置60进行两种材料的压力接合,在一个工序内制造多层金属层压复合薄膜20。
另外,将上述薄膜形成装置90设置在活性化处理装置80的后一工序,可以在金属箔26的表面上形成金属薄膜。此种情况下成为高分子薄膜、金属薄膜、金属薄膜、金属箔的构成结构。此外,也可以通过并列多个薄膜形成装置,制成多层化的金属薄膜。
作为金属薄膜的形成方法,可以采用溅射法、离子镀法、真空蒸镀法等众所周知的方法(参照特开平8-231717号公报)。
此外,如预先使高分子薄膜22表面粗糙化,有利于提高与金属薄膜的密合强度。
以本发明采用的薄膜形成装置90为例,根据图4说明溅射装置。
溅射装置90是由电悬浮的靶电极94和接地的水冷电极辊72组合构成的。在靶电极94中,设置了形成金属薄膜24的靶材92,此外还设置了磁铁98,这样可利用磁场提高溅射效率。
另外,为了防止靶材92的异常加热,可以水冷却靶电极94。
进行靶处理时,在真空度保持在1×10-2Pa以下后,除向真空容器52内通入氩气、氖气、氙气、氪气等惰性气体外,也可通入氧等气体,达到1×101~1×10-2Pa左右的气体保护气氛。
然后,通过给靶电极94施加高频电源96,在靶电极94和电极辊72之间产生等离子体,离子轰击靶材92。由此放出的靶原子沉积在高分子薄膜22上,形成金属薄膜24。
实施例
以下,根据附图说明实施例。
实施例1
采用50μm厚的聚酰亚胺薄膜作为高分子薄膜。此外,采用35μm厚的铜箔作为金属箔。
①在高分子薄膜上形成薄膜
在高分子薄膜22的单面,用溅射法形成厚300nm的作为金属薄膜24的镍薄膜。此面作为与金属箔的接合面。
②金属箔的层压复合
在聚酰亚胺薄膜22的表面上形成镍薄膜的金属薄膜复合膜28和铜箔26分别设置在各自的开卷辊62、64上。
从薄膜开卷辊62开卷的金属薄膜复合膜28和铜箔26部分卷缠在真空容器52内设置的水冷电极辊72、82上,在第1及第2刻蚀装置70、80内,进行溅射刻蚀处理和活性化处理。
然后,将金属薄膜复合膜28和铜箔26送入压力接合装置60,接合面相互重合,进行低压下率冷压接合,多层金属层压复合薄膜20卷绕在卷筒66上。
实施例2
采用50μm厚的聚酰亚胺薄膜作为高分子薄膜。此外,采用50μm厚的铜箔作为金属箔。
①活性化处理
聚酰亚胺薄膜22和铜箔26被设置在多层金属层压复合薄膜制造装置50内。从薄膜开卷筒62开卷的聚酰亚胺薄膜22及从金属箔开卷筒64开卷的铜箔26分别卷绕在真空容器52内的水冷电极辊72、82上,在活性化处理装置70内,用溅射刻蚀法对其进行活性化处理。
②金属薄膜的形成
聚酰亚胺薄膜22经活性化处理后,卷绕在水冷电极辊72上,然后原样送入溅射装置90,形成作为金属薄膜24的厚200nm的镍薄膜。
③压力接合
表面形成金属薄膜24的高分子薄膜22和铜箔26的接合面相互重合,按大约0.5%的低压下率冷压接合,制成多层金属层压复合薄膜20。
本发明的多层金属层压复合薄膜,由于不使用粘合剂,在真空容器中进行压力接合,可按均匀的厚度制造金属箔和高分子薄膜。
此外,可在一个工序内进行表面活性化处理、金属薄膜形成和压力接合,可易于制造多层金属层压复合薄膜。此外,由于对同一电极辊进行表面活性化处理和金属薄膜形成,可使装置紧凑。
Claims (1)
1.一种多层金属层压复合薄膜的制造方法,其特征在于:具有以下工序:
在薄膜开卷筒上设置高分子薄膜的工序;
在金属箔开卷筒上设置金属箔的工序;
从薄膜开卷筒开卷上述高分子薄膜,通过溅射蚀刻活性化处理薄膜面的工序;
通过溅射在前述活性化了的高分子薄膜的薄膜面上形成金属薄膜的工序;
从金属箔开卷筒开卷上述金属箔,通过溅射蚀刻活性化处理金属箔表面的工序;
将上述金属薄膜的表面与上述经活性化处理的金属箔表面压力接合的工序。
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US3767538A (en) * | 1971-01-11 | 1973-10-23 | Siemens Ag | Method of coating plastic films with metal |
US3954570A (en) * | 1974-11-11 | 1976-05-04 | Amp Incorporated | Sensitized polyimides and circuit elements thereof |
US4863808A (en) * | 1985-09-13 | 1989-09-05 | Gould Inc. | Copper-chromium-polyimide composite |
US4896813A (en) * | 1989-04-03 | 1990-01-30 | Toyo Kohan Co., Ltd. | Method and apparatus for cold rolling clad sheet |
EP0459452A2 (en) * | 1990-05-30 | 1991-12-04 | Ube Industries, Ltd. | Aromatic polyimide film laminated with metal foil |
CN1032796C (zh) * | 1991-12-18 | 1996-09-18 | 青岛塑料八厂 | 塑料层合金属带及其制造方法 |
CN1222445A (zh) * | 1997-06-24 | 1999-07-14 | 林和国 | 可冷弯成型的双金属复合板材制造工艺及其制品 |
Also Published As
Publication number | Publication date |
---|---|
DE60120454D1 (de) | 2006-07-20 |
KR20030036886A (ko) | 2003-05-09 |
CN1469806A (zh) | 2004-01-21 |
AU2001292352A1 (en) | 2002-04-22 |
CN1727179A (zh) | 2006-02-01 |
EP1332867A4 (en) | 2004-06-23 |
JP2002113811A (ja) | 2002-04-16 |
EP1332867A1 (en) | 2003-08-06 |
DE60120454T2 (de) | 2006-12-07 |
EP1332867B1 (en) | 2006-06-07 |
WO2002030665A1 (fr) | 2002-04-18 |
US20040038050A1 (en) | 2004-02-26 |
JP4532713B2 (ja) | 2010-08-25 |
KR100514208B1 (ko) | 2005-09-13 |
CN1239318C (zh) | 2006-02-01 |
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