CN1716526A - 清洗远程等离子体产生管的方法及处理衬底的设备和方法 - Google Patents
清洗远程等离子体产生管的方法及处理衬底的设备和方法 Download PDFInfo
- Publication number
- CN1716526A CN1716526A CNA2005100740083A CN200510074008A CN1716526A CN 1716526 A CN1716526 A CN 1716526A CN A2005100740083 A CNA2005100740083 A CN A2005100740083A CN 200510074008 A CN200510074008 A CN 200510074008A CN 1716526 A CN1716526 A CN 1716526A
- Authority
- CN
- China
- Prior art keywords
- remote plasma
- process chamber
- generating tube
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 234
- 239000000758 substrate Substances 0.000 title claims abstract description 233
- 238000012545 processing Methods 0.000 title claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 159
- 238000010926 purge Methods 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 51
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 238000009832 plasma treatment Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 208
- 238000006243 chemical reaction Methods 0.000 claims description 55
- 239000006227 byproduct Substances 0.000 claims description 45
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000006701 autoxidation reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 146
- 239000006185 dispersion Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 208000005189 Embolism Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (50)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040036416A KR100580584B1 (ko) | 2004-05-21 | 2004-05-21 | 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치 |
KR1020040036416 | 2004-05-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1716526A true CN1716526A (zh) | 2006-01-04 |
Family
ID=35374064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005100740083A Pending CN1716526A (zh) | 2004-05-21 | 2005-05-20 | 清洗远程等离子体产生管的方法及处理衬底的设备和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050257890A1 (zh) |
JP (1) | JP2005340787A (zh) |
KR (1) | KR100580584B1 (zh) |
CN (1) | CN1716526A (zh) |
DE (1) | DE102005015829A1 (zh) |
TW (1) | TW200539239A (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103748972A (zh) * | 2011-06-30 | 2014-04-23 | 先进能源工业公司 | 投射的等离子体源 |
CN103779183A (zh) * | 2012-10-17 | 2014-05-07 | Psk有限公司 | 基板处理方法 |
CN105390363A (zh) * | 2015-10-29 | 2016-03-09 | 上海华力微电子有限公司 | 一种高密度等离子体机台的管路装置 |
CN109868459A (zh) * | 2017-12-05 | 2019-06-11 | 北京北方华创微电子装备有限公司 | 一种半导体设备 |
CN110841981A (zh) * | 2019-11-28 | 2020-02-28 | 江苏锦泰新材料科技有限公司 | 一种金属制品除尘装置 |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100712529B1 (ko) * | 2005-09-02 | 2007-04-30 | 삼성전자주식회사 | 플라즈마 어플리케이터의 인시츄 세정 방법 및 그 세정방법을 채용한 플라즈마 어플리케이터 |
JP4245012B2 (ja) | 2006-07-13 | 2009-03-25 | 東京エレクトロン株式会社 | 処理装置及びこのクリーニング方法 |
US7700479B2 (en) * | 2006-11-06 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning processes in the formation of integrated circuit interconnect structures |
US20090159104A1 (en) * | 2007-12-19 | 2009-06-25 | Judy Huang | Method and apparatus for chamber cleaning by in-situ plasma excitation |
KR101431197B1 (ko) * | 2008-01-24 | 2014-09-17 | 삼성전자주식회사 | 원자층 증착설비 및 그의 원자층 증착방법 |
US8357435B2 (en) | 2008-05-09 | 2013-01-22 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8911559B2 (en) * | 2008-09-22 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning |
US7968441B2 (en) * | 2008-10-08 | 2011-06-28 | Applied Materials, Inc. | Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage |
US7749917B1 (en) * | 2008-12-31 | 2010-07-06 | Applied Materials, Inc. | Dry cleaning of silicon surface for solar cell applications |
US8511281B2 (en) * | 2009-07-10 | 2013-08-20 | Tula Technology, Inc. | Skip fire engine control |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
JP2011096937A (ja) * | 2009-10-30 | 2011-05-12 | Ulvac Japan Ltd | 真空励起管の洗浄方法及び真空処理装置 |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
JP2013516763A (ja) | 2009-12-30 | 2013-05-13 | アプライド マテリアルズ インコーポレイテッド | フレキシブルな窒素/水素比を使用して生成されるラジカルを用いる誘電体膜成長 |
US8329262B2 (en) | 2010-01-05 | 2012-12-11 | Applied Materials, Inc. | Dielectric film formation using inert gas excitation |
SG182336A1 (en) | 2010-01-06 | 2012-08-30 | Applied Materials Inc | Flowable dielectric using oxide liner |
CN102844848A (zh) | 2010-03-05 | 2012-12-26 | 应用材料公司 | 通过自由基成分化学气相沉积的共形层 |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
WO2012108321A1 (ja) * | 2011-02-08 | 2012-08-16 | 株式会社アルバック | ラジカルエッチング装置及び方法 |
KR101893471B1 (ko) | 2011-02-15 | 2018-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 멀티존 플라즈마 생성을 위한 방법 및 장치 |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
KR101870667B1 (ko) * | 2011-08-17 | 2018-06-26 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US10256079B2 (en) * | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10192717B2 (en) * | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
KR101720620B1 (ko) * | 2015-04-21 | 2017-03-28 | 주식회사 유진테크 | 기판처리장치 및 챔버 세정방법 |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10755903B2 (en) * | 2016-01-15 | 2020-08-25 | Applied Materials, Inc. | RPS defect reduction by cyclic clean induced RPS cooling |
JP6615009B2 (ja) * | 2016-03-04 | 2019-12-04 | 東京エレクトロン株式会社 | 金属汚染防止方法及び金属汚染防止装置、並びにこれらを用いた基板処理方法及び基板処理装置 |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
KR102660954B1 (ko) * | 2016-10-26 | 2024-04-26 | 에스케이하이닉스 주식회사 | 플라즈마 처리 장치 및 이를 이용한 자연 산화막 제거 방법 |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
JP6905505B2 (ja) * | 2018-12-13 | 2021-07-21 | 株式会社Kokusai Electric | 半導体装置の製造方法、表面処理方法、基板処理装置、およびプログラム |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
JP7061140B2 (ja) * | 2019-02-27 | 2022-04-27 | 株式会社日立ハイテク | プラズマ処理方法及びプラズマ処理装置 |
KR102126208B1 (ko) * | 2019-04-05 | 2020-06-24 | 김광석 | 포토마스크 세정조건에 따라 마스크 고정예열부와 포토마스크가 동시에 승하강되는 포토마스크 표면 이물질 세정용 플라즈마 장치 |
KR102602518B1 (ko) * | 2020-09-01 | 2023-11-15 | 주식회사 엔씨디 | 배치형 원자층 증착장치 |
KR102602519B1 (ko) * | 2021-03-16 | 2023-11-15 | 주식회사 엔씨디 | 배치형 원자층 증착장치 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2670693B1 (fr) * | 1990-12-20 | 1993-04-16 | Dutartre Didier | Procede pour nettoyer la surface d'un substrat par plasma. |
US5268069A (en) * | 1991-10-28 | 1993-12-07 | International Business Machines Corporation | Safe method for etching silicon dioxide |
JP3084497B2 (ja) * | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
US6296735B1 (en) * | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
JPH0786229A (ja) * | 1993-06-24 | 1995-03-31 | Nippon Telegr & Teleph Corp <Ntt> | 酸化シリコンのエッチング方法 |
JP3533583B2 (ja) * | 1994-07-25 | 2004-05-31 | 富士通株式会社 | 水素プラズマダウンフロー装置の洗浄方法 |
US6015724A (en) * | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US6225218B1 (en) * | 1995-12-20 | 2001-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
JPH09256161A (ja) * | 1996-03-15 | 1997-09-30 | Kao Corp | Ecrマイクロ波プラズマcvd装置 |
US5873781A (en) * | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
US6026762A (en) * | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
US6274058B1 (en) * | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
JP3697044B2 (ja) * | 1997-12-19 | 2005-09-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
US6159333A (en) * | 1998-10-08 | 2000-12-12 | Applied Materials, Inc. | Substrate processing system configurable for deposition or cleaning |
JP2000117213A (ja) * | 1998-10-13 | 2000-04-25 | Matsushita Electric Ind Co Ltd | プラズマ洗浄方法及び装置 |
JP2001044281A (ja) * | 1999-07-27 | 2001-02-16 | Mitsubishi Electric Corp | 多層配線構造の半導体装置 |
KR100767762B1 (ko) * | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6758223B1 (en) * | 2000-06-23 | 2004-07-06 | Infineon Technologies Ag | Plasma RIE polymer removal |
JP4461627B2 (ja) * | 2001-03-22 | 2010-05-12 | パナソニック電工株式会社 | アクチュエータ及びその製造方法 |
KR100431657B1 (ko) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
JP2003124196A (ja) * | 2001-10-16 | 2003-04-25 | Shibaura Mechatronics Corp | アッシング装置のクリーニング方法、アッシング装置およびその制御方法 |
JP2003188149A (ja) * | 2001-12-17 | 2003-07-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
JP2003347278A (ja) * | 2002-05-23 | 2003-12-05 | Hitachi Kokusai Electric Inc | 基板処理装置、及び半導体装置の製造方法 |
JP2004146369A (ja) * | 2002-09-20 | 2004-05-20 | Semiconductor Energy Lab Co Ltd | 製造装置および発光装置の作製方法 |
-
2004
- 2004-05-21 KR KR1020040036416A patent/KR100580584B1/ko active IP Right Grant
-
2005
- 2005-03-16 US US11/080,521 patent/US20050257890A1/en not_active Abandoned
- 2005-03-24 TW TW094109068A patent/TW200539239A/zh unknown
- 2005-04-06 DE DE102005015829A patent/DE102005015829A1/de not_active Withdrawn
- 2005-04-21 JP JP2005123278A patent/JP2005340787A/ja active Pending
- 2005-05-20 CN CNA2005100740083A patent/CN1716526A/zh active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103748972A (zh) * | 2011-06-30 | 2014-04-23 | 先进能源工业公司 | 投射的等离子体源 |
CN103748972B (zh) * | 2011-06-30 | 2018-06-29 | 先进能源工业公司 | 投射的等离子体源 |
CN103779183A (zh) * | 2012-10-17 | 2014-05-07 | Psk有限公司 | 基板处理方法 |
CN105390363A (zh) * | 2015-10-29 | 2016-03-09 | 上海华力微电子有限公司 | 一种高密度等离子体机台的管路装置 |
CN109868459A (zh) * | 2017-12-05 | 2019-06-11 | 北京北方华创微电子装备有限公司 | 一种半导体设备 |
CN109868459B (zh) * | 2017-12-05 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 一种半导体设备 |
CN110841981A (zh) * | 2019-11-28 | 2020-02-28 | 江苏锦泰新材料科技有限公司 | 一种金属制品除尘装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200539239A (en) | 2005-12-01 |
JP2005340787A (ja) | 2005-12-08 |
US20050257890A1 (en) | 2005-11-24 |
KR100580584B1 (ko) | 2006-05-16 |
KR20050111202A (ko) | 2005-11-24 |
DE102005015829A1 (de) | 2005-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1716526A (zh) | 清洗远程等离子体产生管的方法及处理衬底的设备和方法 | |
CN100347832C (zh) | 电子器件材料的制造方法 | |
KR100338768B1 (ko) | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 | |
US7094703B2 (en) | Method and apparatus for surface treatment | |
JP4854317B2 (ja) | 基板処理方法 | |
JP5518239B2 (ja) | トレンチ及びビアの断面形状を変形させる方法及び装置 | |
US8435902B2 (en) | Invertable pattern loading with dry etch | |
CN1288720C (zh) | 成膜方法、成膜装置以及使用该成膜方法制造的器件 | |
CN1806315A (zh) | Ti膜及TiN膜的成膜方法、接触结构、计算机能够读取的存储介质以及计算机程序 | |
CN1644251A (zh) | 清洁反应室的方法 | |
CN1943021A (zh) | 电子装置用基板及其处理方法 | |
CN101064244A (zh) | 形成用于高孔径比应用的各向异性特征图形的蚀刻方法 | |
CN1759473A (zh) | 半导体处理用的基板保持结构和等离子体处理装置 | |
CN101030530A (zh) | 形成用于高孔径比应用的各向异性特征图形的蚀刻方法 | |
CN1883037A (zh) | 等离子体处理方法以及等离子体处理装置 | |
CN1822328A (zh) | 立式分批处理装置 | |
CN1681079A (zh) | 用于前段工艺制造的原地干洗腔 | |
CN1837404A (zh) | 成膜装置和成膜方法 | |
JP7208318B2 (ja) | 処理装置 | |
US11469111B2 (en) | Substrate processing method and plasma processing apparatus | |
CN1836317A (zh) | 成膜方法、半导体装置的制造方法、半导体装置、基板处理系统 | |
US20070261639A1 (en) | Semiconductor manufacturing apparatus | |
CN100352014C (zh) | 蚀刻方法 | |
CN1795546A (zh) | 氟化碳膜的形成方法 | |
JP2012142584A (ja) | クリーニング・プロセスのための副産物収集する製造プロセス及び製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD; APPLICANT Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD Effective date: 20071130 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071130 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Electronics Co., Ltd. Co-applicant after: Wuerwake company Address before: Gyeonggi Do, South Korea Applicant before: Samsung Electronics Co., Ltd. |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |