CN1521858A - 薄膜晶体管及其制造方法 - Google Patents
薄膜晶体管及其制造方法 Download PDFInfo
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- CN1521858A CN1521858A CNA2004100037271A CN200410003727A CN1521858A CN 1521858 A CN1521858 A CN 1521858A CN A2004100037271 A CNA2004100037271 A CN A2004100037271A CN 200410003727 A CN200410003727 A CN 200410003727A CN 1521858 A CN1521858 A CN 1521858A
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Images
Classifications
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/772—Field effect transistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
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- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003034288A JP4341062B2 (ja) | 2003-02-12 | 2003-02-12 | 薄膜トランジスタおよびその製造方法 |
JP2003034288 | 2003-02-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1521858A true CN1521858A (zh) | 2004-08-18 |
CN1311563C CN1311563C (zh) | 2007-04-18 |
Family
ID=32821008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100037271A Expired - Lifetime CN1311563C (zh) | 2003-02-12 | 2004-02-04 | 薄膜晶体管及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7064364B2 (zh) |
JP (1) | JP4341062B2 (zh) |
CN (1) | CN1311563C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103762168A (zh) * | 2011-12-31 | 2014-04-30 | 广东中显科技有限公司 | 底栅薄膜晶体管的制造方法 |
CN105097940A (zh) * | 2014-04-25 | 2015-11-25 | 上海和辉光电有限公司 | 薄膜晶体管阵列衬底结构及其制造方法 |
CN105551967A (zh) * | 2016-02-14 | 2016-05-04 | 武汉华星光电技术有限公司 | N型薄膜晶体管的制作方法 |
CN106898653A (zh) * | 2015-12-21 | 2017-06-27 | 昆山国显光电有限公司 | 驱动薄膜晶体管、像素电路及显示装置 |
CN107204374A (zh) * | 2017-05-16 | 2017-09-26 | 深圳市华星光电技术有限公司 | 一种柔性薄膜晶体管及其制备方法 |
CN107302032A (zh) * | 2017-06-19 | 2017-10-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板、显示面板 |
CN107422555A (zh) * | 2017-07-25 | 2017-12-01 | 武汉华星光电技术有限公司 | 一种显示装置、阵列基板及其制备方法 |
US10651312B2 (en) | 2017-05-16 | 2020-05-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible thin film transistor and method for fabricating the same |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4944402B2 (ja) * | 2005-07-13 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TWI330276B (en) * | 2006-04-25 | 2010-09-11 | Au Optronics Corp | Active device array substrate and fabricating method thereof |
TWI617869B (zh) | 2006-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置和半導體裝置 |
JP2008042044A (ja) * | 2006-08-09 | 2008-02-21 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板、その製造方法、及び表示装置 |
TWI358832B (en) * | 2007-02-26 | 2012-02-21 | Au Optronics Corp | Semiconductor device and manufacturing method ther |
JP5324837B2 (ja) * | 2007-06-22 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP5458367B2 (ja) | 2007-07-09 | 2014-04-02 | Nltテクノロジー株式会社 | 薄膜トランジスタ及びその製造方法 |
TWI379142B (en) * | 2008-07-17 | 2012-12-11 | Au Optronics Corp | Thin film transistor substrate and thin film transistor of display panel and method of making the same |
JP5182116B2 (ja) * | 2009-01-23 | 2013-04-10 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
US8916868B2 (en) * | 2011-04-22 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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CN107422555A (zh) * | 2017-07-25 | 2017-12-01 | 武汉华星光电技术有限公司 | 一种显示装置、阵列基板及其制备方法 |
Also Published As
Publication number | Publication date |
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US7064364B2 (en) | 2006-06-20 |
JP2004247434A (ja) | 2004-09-02 |
CN1311563C (zh) | 2007-04-18 |
US20040155245A1 (en) | 2004-08-12 |
JP4341062B2 (ja) | 2009-10-07 |
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