JP5318862B2 - 架橋粒子構造を有する多結晶シリコン薄膜トランジスタ - Google Patents
架橋粒子構造を有する多結晶シリコン薄膜トランジスタ Download PDFInfo
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
・電気的性能の向上
・電界効果移動度の向上
・電流オンフローにおける均一性の向上
・コストの削減
・閾値電圧および漏れ電流の低減
・粒子移動度におけるランダム性の低減および粒子境界抵抗の低減
・“オン”状態におけるバリア電位の低減とキャリア移動度の向上
・“オフ”状態における漏れ電流の低減
表1 MILC低温poly−Si(LT−MILC TFT)、架橋粒子構造MILC低温poly−Si(BG−MILC TFT)、エキシマレーザ後アニーリング(ELA−MICL TFT)、および、高温後アニーリングを有するMILCpoly−Si(HT−MILC)をそれぞれ活性層として用いて組み立てられた低温poly−SiTFTの装置パラメータの比較
この新しい横断方向ドープpoly−Siを活性層として用い、チャンネルがナノラインに対して垂直であることを確実にすると、このBG構造を含む薄膜トランジスタは際立った性能を示す。TFTが“オン”状態で作動しているとき、注入されたpoly−Siはバリア電位を著しく低減し、キャリア移動度を向上させる。“オフ”状態では、チャンネルに沿って直列の反転p−n接合点は、漏れ電流を著しく低減する。
Claims (20)
- 粒子を含む多結晶性の半導体材料のチャンネル層と、
上記チャンネル層によって電気的に接続される、p型またはn型にドープされた第1および第2の各ソース/ドレイン領域と、
上記チャンネル層と電気的に相互作用して、上記第1および第2の各ソース/ドレイン領域の間の導通を制御する制御ターミナルと、
上記チャンネル層の上および中にある、複数の各横断方向導電性ブリッジとを備え、
上記各横断方向導電性ブリッジは、上記第1および第2の各ソース/ドレイン領域と同じp型またはn型にドープされたものであり、所望の電流フローの方向に対して直交方向に位置され、
上記各横断方向導電性ブリッジの間は、上記粒子のサイズの平均の半分以下であり、
上記各横断方向導電性ブリッジの幅は、30nm〜500nmである、トランジスタ。 - 上記各横断方向導電性ブリッジは、10ミクロンより小さな幅を有し、10ミクロン未満の間隔にて配置されている、請求項1に記載のトランジスタ。
- 上記各横断方向導電性ブリッジは、上記チャンネル層をドーピングすることによって形成されている、請求項1に記載のトランジスタ。
- 上記半導体材料は、低温多結晶シリコンである、請求項1に記載のトランジスタ。
- 上記半導体材料は、エキシマレーザアニーリング、または、固相結晶化、または金属誘起結晶化によって形成される低温多結晶シリコン材料である、請求項1に記載のトランジスタ。
- さらに、上記半導体材料を支持するガラス基板を備える、請求項1に記載のトランジスタ。
- p型またはn型のソース領域と、
上記ソース領域と同じp型またはn型のドレイン領域と、
上記ソース領域および上記ドレイン領域を接続する、粒子を含む多結晶性の半導体材料の活性チャンネルと、
上記活性チャンネルの部分を覆い、上記活性チャンネルから電気的に絶縁されているゲートとを備え、
上記活性チャンネルは、高抵抗および低抵抗の複数の各横断方向領域を有し、
上記各横断方向領域は、電流フローの方向を直交するように位置し、
上記低抵抗の各横断方向領域は、上記ソース領域と同じp型またはn型にドープされたものであり、
上記高抵抗の各横断方向領域の幅は、上記粒子のサイズの平均の半分以下であり、
上記低抵抗の各横断方向領域の幅は、30nm〜500nmである、薄膜トランジスタ。 - シリコン、ゲルマニウム、シリコンおよびゲルマニウムの合金、III−V族化合物半導体、および有機半導体の群から選択される少なくとも一つの半導体材料を用いて上記薄膜トランジスタが形成されている、請求項7に記載の薄膜トランジスタ。
- 多結晶性、マイクロ結晶性、またはナノ結晶性の各材料の少なくとも一つを用いて上記薄膜トランジスタが形成されている、請求項7に記載の薄膜トランジスタ。
- 上記薄膜トランジスタは、低温多結晶シリコン材料から形成されている、請求項7に記載の薄膜トランジスタ。
- 上記低温多結晶シリコン膜は、エキシマレーザ結晶化によって形成されている、請求項10に記載の薄膜トランジスタ。
- 上記各横断方向領域におけるドーパント領域は、各平行線、各平行曲線、または、各同心円を形成する、請求項7に記載の薄膜トランジスタ。
- ソース領域と、
ドレイン領域と、
ソースおよびドレイン領域を接続する、粒子を含む多結晶性の半導体材料の活性チャンネルとを備え、
上記活性チャンネルは、上記ソース領域と同じn型ドーパントまたはp型ドーパントの複数の各領域を有し、
上記各領域が電流フローの方向と直交し、
上記各領域の間は、上記粒子のサイズの平均の半分以下であり、
上記各領域の幅は、30nm〜500nmである、薄膜トランジスタ。 - 上記薄膜トランジスタは、低温多結晶シリコン材料から形成されている、請求項13に記載の薄膜トランジスタ。
- 上記活性チャンネルは、ガラス基板に支持されている、請求項13に記載の薄膜トランジスタ。
- 上記複数の各領域におけるドーパントの単位面積当たりのドーピング量は、1012/cm2以上、1016/cm2以下である、請求項13に記載の薄膜トランジスタ。
- 上記複数の各領域における各ドーパント領域は、各平行線、各平行曲線、または各同心円を形成している、請求項13に記載の薄膜トランジスタ。
- 上記活性チャンネルは、ほぼドープされず、上記複数の各領域は、n型ドーパントでドープされている、請求項13に記載の薄膜トランジスタ。
- 上記ソース領域は、n型でドープされ、上記ドレイン領域は、n型でドープされており、上記活性チャンネルは、p型でドープされており、上記複数の各領域は、n型ドーパントでドープされている、請求項13に記載の薄膜トランジスタ。
- 上記ソース領域は、p型でドープされ、上記ドレイン領域は、p型でドープされ、上記活性チャンネルは、n型でドープされている、請求項13に記載の薄膜トランジスタ。
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US92933807P | 2007-06-22 | 2007-06-22 | |
US60/929,338 | 2007-06-22 | ||
PCT/CN2008/000313 WO2009000136A1 (en) | 2007-06-22 | 2008-02-04 | Polycrystalline silicon thin film transistors with bridged-grain structures |
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JP2010531053A JP2010531053A (ja) | 2010-09-16 |
JP5318862B2 true JP5318862B2 (ja) | 2013-10-16 |
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US (1) | US8426865B2 (ja) |
JP (1) | JP5318862B2 (ja) |
KR (1) | KR101426982B1 (ja) |
CN (1) | CN101681930B (ja) |
HK (1) | HK1141625A1 (ja) |
WO (1) | WO2009000136A1 (ja) |
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US9299863B2 (en) | 2008-05-07 | 2016-03-29 | The Hong Kong University Of Science And Technology | Ultrathin film multi-crystalline photovoltaic device |
DE102008054219A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Organisches strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements |
US10811160B2 (en) | 2011-05-27 | 2020-10-20 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of producing thermoelectric material |
US9847470B2 (en) | 2011-04-26 | 2017-12-19 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of producing thermoelectric material |
US10672966B2 (en) | 2011-05-27 | 2020-06-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of producing thermoelectric material |
CN102956500A (zh) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | 多晶硅薄膜晶体管的制备方法 |
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US20100171546A1 (en) | 2010-07-08 |
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CN101681930A (zh) | 2010-03-24 |
WO2009000136A1 (en) | 2008-12-31 |
CN101681930B (zh) | 2012-11-14 |
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