CN1638022A - 多晶硅膜的形成方法 - Google Patents
多晶硅膜的形成方法 Download PDFInfo
- Publication number
- CN1638022A CN1638022A CNA2004100857849A CN200410085784A CN1638022A CN 1638022 A CN1638022 A CN 1638022A CN A2004100857849 A CNA2004100857849 A CN A2004100857849A CN 200410085784 A CN200410085784 A CN 200410085784A CN 1638022 A CN1638022 A CN 1638022A
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- Prior art keywords
- film
- amorphous silicon
- silicon film
- laser
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 24
- 230000008025 crystallization Effects 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910016048 MoW Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 94
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02494—Structure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030100230A KR100577795B1 (ko) | 2003-12-30 | 2003-12-30 | 다결정 실리콘막 형성방법 |
KR100230/2003 | 2003-12-30 | ||
KR100230/03 | 2003-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638022A true CN1638022A (zh) | 2005-07-13 |
CN100356509C CN100356509C (zh) | 2007-12-19 |
Family
ID=34698750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100857849A Expired - Lifetime CN100356509C (zh) | 2003-12-30 | 2004-10-22 | 多晶硅膜的形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050142708A1 (zh) |
JP (1) | JP2005197656A (zh) |
KR (1) | KR100577795B1 (zh) |
CN (1) | CN100356509C (zh) |
TW (1) | TWI266925B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894744A (zh) * | 2010-06-11 | 2010-11-24 | 南开大学 | 一种采用背面保温层技术激光晶化多晶硅薄膜的方法 |
CN103402940A (zh) * | 2011-03-08 | 2013-11-20 | 法国圣戈班玻璃厂 | 用于获得提供有涂层的基材的方法 |
CN104204287A (zh) * | 2012-04-17 | 2014-12-10 | 法国圣戈班玻璃厂 | 用于制备经涂覆基材的方法 |
CN104716020A (zh) * | 2013-12-11 | 2015-06-17 | 东京毅力科创株式会社 | 非晶硅的结晶化方法、结晶化硅膜的成膜方法、半导体装置的制造方法和成膜装置 |
CN104779300A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜晶体管及其制作方法和显示装置 |
CN104900710A (zh) * | 2015-06-08 | 2015-09-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板 |
WO2017107274A1 (zh) * | 2015-12-21 | 2017-06-29 | 武汉华星光电技术有限公司 | 一种低温多晶硅薄膜晶体管及其制备方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100624427B1 (ko) * | 2004-07-08 | 2006-09-19 | 삼성전자주식회사 | 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법 |
TW200743154A (en) * | 2006-05-10 | 2007-11-16 | Toppoly Optoelectronics Corp | System for displaying image and laser annealing method for LTPS |
US20080042131A1 (en) * | 2006-08-15 | 2008-02-21 | Tpo Displays Corp. | System for displaying images including thin film transistor device and method for fabricating the same |
TWI327447B (en) * | 2006-10-16 | 2010-07-11 | Chimei Innolux Corp | Method of fabricating a thin film transistor |
WO2009068756A1 (fr) | 2007-11-28 | 2009-06-04 | Commissariat A L'energie Atomique | Procede de cristallisation |
KR101688074B1 (ko) | 2010-01-27 | 2016-12-21 | 삼성디스플레이 주식회사 | 표시기판 및 이의 제조방법 |
CN102956499A (zh) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | 多晶硅薄膜的制备方法 |
FR3073321B1 (fr) * | 2017-11-07 | 2019-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de cristallisation d'une couche utile |
CN111916462B (zh) * | 2020-07-30 | 2022-12-23 | 北海惠科光电技术有限公司 | 一种基板、制备基板的方法和显示面板 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3150840B2 (ja) | 1994-03-11 | 2001-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3424891B2 (ja) * | 1996-12-27 | 2003-07-07 | 三洋電機株式会社 | 薄膜トランジスタの製造方法および表示装置 |
KR100269312B1 (ko) * | 1997-10-14 | 2000-10-16 | 윤종용 | 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법 |
JP2000208771A (ja) * | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
KR100290014B1 (ko) * | 1999-04-01 | 2001-05-15 | 구본준, 론 위라하디락사 | 실리콘 박막 결정화방법과 이를 이용한 박막 트랜지스터 및 그제조방법 |
TW473783B (en) * | 1999-08-13 | 2002-01-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
JP2001102323A (ja) * | 1999-09-30 | 2001-04-13 | Matsushita Electric Ind Co Ltd | レーザアニール装置および薄膜トランジスタの製造方法 |
US6524877B1 (en) * | 1999-10-26 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of fabricating the same |
JP5025057B2 (ja) * | 2001-05-10 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4008716B2 (ja) * | 2002-02-06 | 2007-11-14 | シャープ株式会社 | フラットパネル表示装置およびその製造方法 |
-
2003
- 2003-12-30 KR KR1020030100230A patent/KR100577795B1/ko active IP Right Grant
-
2004
- 2004-08-30 US US10/930,011 patent/US20050142708A1/en not_active Abandoned
- 2004-08-31 TW TW093126183A patent/TWI266925B/zh active
- 2004-09-06 JP JP2004258234A patent/JP2005197656A/ja active Pending
- 2004-10-22 CN CNB2004100857849A patent/CN100356509C/zh not_active Expired - Lifetime
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894744B (zh) * | 2010-06-11 | 2012-09-05 | 南开大学 | 一种采用背面保温层技术激光晶化多晶硅薄膜的方法 |
CN101894744A (zh) * | 2010-06-11 | 2010-11-24 | 南开大学 | 一种采用背面保温层技术激光晶化多晶硅薄膜的方法 |
CN103402940B (zh) * | 2011-03-08 | 2016-09-28 | 法国圣戈班玻璃厂 | 用于获得提供有涂层的基材的方法 |
CN103402940A (zh) * | 2011-03-08 | 2013-11-20 | 法国圣戈班玻璃厂 | 用于获得提供有涂层的基材的方法 |
CN104204287A (zh) * | 2012-04-17 | 2014-12-10 | 法国圣戈班玻璃厂 | 用于制备经涂覆基材的方法 |
US10597774B2 (en) | 2012-04-17 | 2020-03-24 | Saint-Gobain Glass France | Method for producing a coated substrate |
CN104716020A (zh) * | 2013-12-11 | 2015-06-17 | 东京毅力科创株式会社 | 非晶硅的结晶化方法、结晶化硅膜的成膜方法、半导体装置的制造方法和成膜装置 |
WO2016165223A1 (zh) * | 2015-04-16 | 2016-10-20 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜晶体管及其制作方法和显示装置 |
CN104779300B (zh) * | 2015-04-16 | 2016-05-25 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜晶体管及其制作方法和显示装置 |
US9837542B2 (en) | 2015-04-16 | 2017-12-05 | Boe Technology Group Co., Ltd. | Polycrystalline silicon thin-film transistor |
CN104779300A (zh) * | 2015-04-16 | 2015-07-15 | 京东方科技集团股份有限公司 | 一种多晶硅薄膜晶体管及其制作方法和显示装置 |
CN104900710A (zh) * | 2015-06-08 | 2015-09-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板 |
WO2017107274A1 (zh) * | 2015-12-21 | 2017-06-29 | 武汉华星光电技术有限公司 | 一种低温多晶硅薄膜晶体管及其制备方法 |
US10192975B2 (en) | 2015-12-21 | 2019-01-29 | Wuhan China Star Optoelectronics Technology Co., Ltd | Low temperature polycrystalline silicon thin film transistor |
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TW200521541A (en) | 2005-07-01 |
CN100356509C (zh) | 2007-12-19 |
JP2005197656A (ja) | 2005-07-21 |
TWI266925B (en) | 2006-11-21 |
KR100577795B1 (ko) | 2006-05-11 |
US20050142708A1 (en) | 2005-06-30 |
KR20050070556A (ko) | 2005-07-07 |
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