FR3073321B1 - Procede de cristallisation d'une couche utile - Google Patents

Procede de cristallisation d'une couche utile Download PDF

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Publication number
FR3073321B1
FR3073321B1 FR1760448A FR1760448A FR3073321B1 FR 3073321 B1 FR3073321 B1 FR 3073321B1 FR 1760448 A FR1760448 A FR 1760448A FR 1760448 A FR1760448 A FR 1760448A FR 3073321 B1 FR3073321 B1 FR 3073321B1
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FR
France
Prior art keywords
layer
forming
useful layer
radiative
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1760448A
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English (en)
Other versions
FR3073321A1 (fr
Inventor
Philippe Bouchut
Jacqueline Bablet
Francoise Geffraye
Maryse Reymermier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1760448A priority Critical patent/FR3073321B1/fr
Publication of FR3073321A1 publication Critical patent/FR3073321A1/fr
Application granted granted Critical
Publication of FR3073321B1 publication Critical patent/FR3073321B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de cristallisation comprenant les étapes suivantes : a) fournir un substrat support (10); b) former sur le substrat support (10) une couche d'interface (20) faite de premières nano particules métalliques disjointes et non radiatives intrinsèquement ; c) former une couche utile (30) faite d'un matériau amorphe, d'indice n, et d'une épaisseur E, de sorte que le produit nE soit égal à λ/4, d) former une couche plasmonique (40) faite de secondes particules métalliques (41) disjointes et radiatives ; e) appliquer le rayonnement laser en face arrière du support de manière à atteindre une intensité seuil, diffuser inélastiquement de la lumière, provoquer une montée en température des premières et secondes particules, et initier un front de cristallisation de la couche utile (30) à partir d'une interface formée entre la couche utile (30) et la couche d'interface (20).
FR1760448A 2017-11-07 2017-11-07 Procede de cristallisation d'une couche utile Active FR3073321B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1760448A FR3073321B1 (fr) 2017-11-07 2017-11-07 Procede de cristallisation d'une couche utile

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1760448 2017-11-07
FR1760448A FR3073321B1 (fr) 2017-11-07 2017-11-07 Procede de cristallisation d'une couche utile

Publications (2)

Publication Number Publication Date
FR3073321A1 FR3073321A1 (fr) 2019-05-10
FR3073321B1 true FR3073321B1 (fr) 2019-12-20

Family

ID=61750225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1760448A Active FR3073321B1 (fr) 2017-11-07 2017-11-07 Procede de cristallisation d'une couche utile

Country Status (1)

Country Link
FR (1) FR3073321B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3119385B1 (fr) * 2021-02-01 2023-01-13 Univ Bordeaux Revêtement de surface nanostructurée pour générer des nouvelles apparences visuelles

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100333134B1 (ko) * 2000-06-27 2002-04-19 장 진 전계와 자외선을 이용한 비정질 막의 결정화 방법
KR100434313B1 (ko) * 2001-04-23 2004-06-05 엘지.필립스 엘시디 주식회사 비정질 실리콘의 결정화 방법
KR100577795B1 (ko) * 2003-12-30 2006-05-11 비오이 하이디스 테크놀로지 주식회사 다결정 실리콘막 형성방법
US7897494B2 (en) * 2008-06-24 2011-03-01 Imec Formation of single crystal semiconductor nanowires
FR3008994A1 (fr) * 2013-07-25 2015-01-30 Commissariat Energie Atomique Procede de cristallisation en phase solide

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Publication number Publication date
FR3073321A1 (fr) 2019-05-10

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