CN1794889A - 低温多晶硅薄膜晶体管显示面板及其制造方法 - Google Patents
低温多晶硅薄膜晶体管显示面板及其制造方法 Download PDFInfo
- Publication number
- CN1794889A CN1794889A CNA2005101193093A CN200510119309A CN1794889A CN 1794889 A CN1794889 A CN 1794889A CN A2005101193093 A CNA2005101193093 A CN A2005101193093A CN 200510119309 A CN200510119309 A CN 200510119309A CN 1794889 A CN1794889 A CN 1794889A
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon oxynitride
- polysilicon layer
- polysilicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920006268 silicone film Polymers 0.000 title claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- 229920005591 polysilicon Polymers 0.000 claims abstract description 55
- 238000002425 crystallisation Methods 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 230000008025 crystallization Effects 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000007790 solid phase Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims 10
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000007787 solid Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 239000010409 thin film Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101193093A CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101193093A CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1794889A true CN1794889A (zh) | 2006-06-28 |
CN100452933C CN100452933C (zh) | 2009-01-14 |
Family
ID=36806093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101193093A Active CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100452933C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014056252A1 (zh) * | 2012-10-09 | 2014-04-17 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
CN111696849A (zh) * | 2019-03-13 | 2020-09-22 | 上海新微技术研发中心有限公司 | 一种复合薄膜、复合硅晶圆及其制备方法与应用 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4010724B2 (ja) * | 1999-12-28 | 2007-11-21 | 株式会社東芝 | 半導体装置の製造方法 |
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
US6939754B2 (en) * | 2003-08-13 | 2005-09-06 | Sharp Laboratories Of America, Inc. | Isotropic polycrystalline silicon and method for producing same |
-
2005
- 2005-11-03 CN CNB2005101193093A patent/CN100452933C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014056252A1 (zh) * | 2012-10-09 | 2014-04-17 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
CN111696849A (zh) * | 2019-03-13 | 2020-09-22 | 上海新微技术研发中心有限公司 | 一种复合薄膜、复合硅晶圆及其制备方法与应用 |
Also Published As
Publication number | Publication date |
---|---|
CN100452933C (zh) | 2009-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103456765B (zh) | 有源式有机电致发光器件背板及其制作方法 | |
KR100920316B1 (ko) | 발광 장치 | |
CN1636235A (zh) | 有源矩阵型有机电致发光显示装置及其制造方法 | |
US20040188685A1 (en) | Thin film transistor and fabrication method thereof | |
CN101043047A (zh) | 显示装置及其制造方法 | |
US7202096B2 (en) | Control TFT for OLED display | |
CN101047199A (zh) | 有机电激发光显示元件及其制造方法 | |
JPH08234683A (ja) | 有機エレクトロルミネセンス媒体を用いたtft−el表示パネル | |
JPH08241047A (ja) | Tft−el画素製造方法 | |
CN1702879A (zh) | 薄膜晶体管衬底和其制造方法 | |
CN101047200A (zh) | 有机电激发光显示元件及其制造方法 | |
CN101170076B (zh) | 有机电激发光元件的制造方法及影像显示系统 | |
CN101075635A (zh) | 图像显示系统 | |
CN101546732B (zh) | 薄膜晶体管制造方法及具有该薄膜晶体管的显示器 | |
Lin et al. | Improvement of brightness uniformity by AC driving scheme for AMOLED display | |
CN1581514A (zh) | 栅体短路的薄膜晶体管、其制造方法及相关显示器 | |
CN1241269C (zh) | 薄膜晶体管及具有该薄膜晶体管之显示装置 | |
CN1525554A (zh) | 低温多晶硅薄膜晶体管的制作方法 | |
CN100452933C (zh) | 低温多晶硅薄膜晶体管显示面板及其制造方法 | |
CN1832138A (zh) | 显示面板及其制作方法 | |
CN100369266C (zh) | 控制薄膜晶体管及其制造方法与含其的电致发光显示装置 | |
KR100482328B1 (ko) | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 | |
CN1259693C (zh) | 低温多晶硅薄膜的制造方法及低温多晶硅薄膜晶体管 | |
US20080206938A1 (en) | Low temperature polysilicon thin film transistor display and method of fabricating the same | |
CN1622178A (zh) | 有源矩阵型显示器及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180427 Address after: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee after: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231216 Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee before: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. |