CN100452933C - 低温多晶硅薄膜晶体管显示面板及其制造方法 - Google Patents
低温多晶硅薄膜晶体管显示面板及其制造方法 Download PDFInfo
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- CN100452933C CN100452933C CNB2005101193093A CN200510119309A CN100452933C CN 100452933 C CN100452933 C CN 100452933C CN B2005101193093 A CNB2005101193093 A CN B2005101193093A CN 200510119309 A CN200510119309 A CN 200510119309A CN 100452933 C CN100452933 C CN 100452933C
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- silicon oxynitride
- polysilicon
- substrate
- display floater
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920006268 silicone film Polymers 0.000 title claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 51
- 229920005591 polysilicon Polymers 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims abstract description 28
- 230000008025 crystallization Effects 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000007790 solid phase Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 6
- 150000003376 silicon Chemical class 0.000 claims 10
- 239000010410 layer Substances 0.000 description 54
- 239000010409 thin film Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Images
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- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101193093A CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101193093A CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1794889A CN1794889A (zh) | 2006-06-28 |
CN100452933C true CN100452933C (zh) | 2009-01-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005101193093A Active CN100452933C (zh) | 2005-11-03 | 2005-11-03 | 低温多晶硅薄膜晶体管显示面板及其制造方法 |
Country Status (1)
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CN (1) | CN100452933C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856392B (zh) * | 2012-10-09 | 2015-12-02 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
CN111696849A (zh) * | 2019-03-13 | 2020-09-22 | 上海新微技术研发中心有限公司 | 一种复合薄膜、复合硅晶圆及其制备方法与应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
JP2001189451A (ja) * | 1999-12-28 | 2001-07-10 | Toshiba Corp | 半導体装置の製造方法 |
US6939754B2 (en) * | 2003-08-13 | 2005-09-06 | Sharp Laboratories Of America, Inc. | Isotropic polycrystalline silicon and method for producing same |
-
2005
- 2005-11-03 CN CNB2005101193093A patent/CN100452933C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
JP2001189451A (ja) * | 1999-12-28 | 2001-07-10 | Toshiba Corp | 半導体装置の製造方法 |
US6939754B2 (en) * | 2003-08-13 | 2005-09-06 | Sharp Laboratories Of America, Inc. | Isotropic polycrystalline silicon and method for producing same |
Also Published As
Publication number | Publication date |
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CN1794889A (zh) | 2006-06-28 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180427 Address after: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee after: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231216 Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: Hongkong Chinese Tsuen Tai Chung Road No. 8 TCL industrial center 13 floor Patentee before: Huaxing Optoelectronic International (Hong Kong) Co.,Ltd. |