CN1702879A - 薄膜晶体管衬底和其制造方法 - Google Patents
薄膜晶体管衬底和其制造方法 Download PDFInfo
- Publication number
- CN1702879A CN1702879A CNA2005100738168A CN200510073816A CN1702879A CN 1702879 A CN1702879 A CN 1702879A CN A2005100738168 A CNA2005100738168 A CN A2005100738168A CN 200510073816 A CN200510073816 A CN 200510073816A CN 1702879 A CN1702879 A CN 1702879A
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- thin film
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 21
- 239000010409 thin film Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 238000005224 laser annealing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 239000003550 marker Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0214—Foldable telephones, i.e. with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0225—Rotatable telephones, i.e. the body parts pivoting to an open position around an axis perpendicular to the plane they define in closed position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Signal Processing (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040036841A KR100599595B1 (ko) | 2004-05-24 | 2004-05-24 | 발광표시 장치용 반도체 소자 및 그 제조 방법 |
KR36841/04 | 2004-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1702879A true CN1702879A (zh) | 2005-11-30 |
CN100426527C CN100426527C (zh) | 2008-10-15 |
Family
ID=35374395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100738168A Active CN100426527C (zh) | 2004-05-24 | 2005-05-24 | 薄膜晶体管衬底和其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7326959B2 (zh) |
JP (1) | JP2005340822A (zh) |
KR (1) | KR100599595B1 (zh) |
CN (1) | CN100426527C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102456743A (zh) * | 2010-10-22 | 2012-05-16 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法 |
CN104617108A (zh) * | 2015-01-27 | 2015-05-13 | 深圳市华星光电技术有限公司 | 低温多晶硅tft基板结构 |
CN112420743A (zh) * | 2020-11-06 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和显示面板的制作方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101309174B1 (ko) * | 2006-11-15 | 2013-09-23 | 삼성디스플레이 주식회사 | 표시 장치와 그 제조 방법 |
KR20080099463A (ko) * | 2007-05-09 | 2008-11-13 | 주식회사 하이닉스반도체 | 반도체 소자, 비휘발성 메모리 소자 및 그 제조방법 |
KR101015847B1 (ko) * | 2008-01-18 | 2011-02-23 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그 제조방법 및 이를 구비한유기전계발광표시장치 |
US20120104402A1 (en) * | 2010-11-03 | 2012-05-03 | Pei-Hua Chen | Architecture of analog buffer circuit |
TWI422039B (zh) * | 2011-05-11 | 2014-01-01 | Au Optronics Corp | 薄膜電晶體元件及其製作方法 |
KR101915754B1 (ko) | 2012-05-08 | 2018-11-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 표시 장치 |
KR101938760B1 (ko) | 2012-07-26 | 2019-01-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
DE112016000170T5 (de) | 2015-06-17 | 2017-08-03 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zur Hestellung einer Halbleitervorrichtung |
CN105547191B (zh) * | 2015-12-15 | 2018-03-27 | 宁波频泰光电科技有限公司 | 一种彩色3d测量系统 |
KR102666532B1 (ko) | 2018-09-27 | 2024-05-14 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0626244B2 (ja) | 1985-03-04 | 1994-04-06 | 日本電気株式会社 | 半導体装置 |
JPH04359562A (ja) | 1991-06-06 | 1992-12-11 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
JP2975973B2 (ja) * | 1993-08-10 | 1999-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3362467B2 (ja) | 1993-08-12 | 2003-01-07 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法 |
JPH07288287A (ja) * | 1994-04-18 | 1995-10-31 | Sony Corp | Tft負荷型sram |
US5789762A (en) * | 1994-09-14 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor active matrix circuit |
JP2647020B2 (ja) | 1994-09-27 | 1997-08-27 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ及びその製造方法 |
JP3525316B2 (ja) * | 1996-11-12 | 2004-05-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
JP2924832B2 (ja) * | 1996-11-28 | 1999-07-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US6013930A (en) * | 1997-09-24 | 2000-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having laminated source and drain regions and method for producing the same |
JP3693915B2 (ja) | 1997-11-21 | 2005-09-14 | ビーティージー インターナショナル,インク. | プログラマブル不揮発性複数ビットメモリセルを有する記憶装置およびそのセルの記憶状態を分界する装置と方法 |
JPH11204657A (ja) | 1998-01-19 | 1999-07-30 | Sony Corp | Cmos集積回路 |
JP4236992B2 (ja) * | 2002-06-24 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR100450683B1 (ko) * | 2002-09-04 | 2004-10-01 | 삼성전자주식회사 | Soi 기판에 형성되는 에스램 디바이스 |
KR20050028101A (ko) * | 2003-09-17 | 2005-03-22 | 주식회사 하이닉스반도체 | 인버터 및 그 제조방법 |
-
2004
- 2004-05-24 KR KR1020040036841A patent/KR100599595B1/ko active IP Right Grant
-
2005
- 2005-05-16 US US11/129,393 patent/US7326959B2/en active Active
- 2005-05-23 JP JP2005149436A patent/JP2005340822A/ja active Pending
- 2005-05-24 CN CNB2005100738168A patent/CN100426527C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102456743A (zh) * | 2010-10-22 | 2012-05-16 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法 |
CN102456743B (zh) * | 2010-10-22 | 2015-09-16 | 三星显示有限公司 | 薄膜晶体管及其制造方法 |
CN104617108A (zh) * | 2015-01-27 | 2015-05-13 | 深圳市华星光电技术有限公司 | 低温多晶硅tft基板结构 |
CN104617108B (zh) * | 2015-01-27 | 2017-06-27 | 深圳市华星光电技术有限公司 | 低温多晶硅tft基板结构 |
CN112420743A (zh) * | 2020-11-06 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和显示面板的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050111911A (ko) | 2005-11-29 |
KR100599595B1 (ko) | 2006-07-13 |
US20050258486A1 (en) | 2005-11-24 |
US7326959B2 (en) | 2008-02-05 |
CN100426527C (zh) | 2008-10-15 |
JP2005340822A (ja) | 2005-12-08 |
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Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung SDI Co., Ltd. |
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Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
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Effective date of registration: 20121023 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |