CN1507662A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1507662A CN1507662A CNA028096606A CN02809660A CN1507662A CN 1507662 A CN1507662 A CN 1507662A CN A028096606 A CNA028096606 A CN A028096606A CN 02809660 A CN02809660 A CN 02809660A CN 1507662 A CN1507662 A CN 1507662A
- Authority
- CN
- China
- Prior art keywords
- dielectric film
- film
- conductive layer
- semiconductor device
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 96
- 238000002955 isolation Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 132
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 120
- 229920005591 polysilicon Polymers 0.000 claims description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 65
- 238000005530 etching Methods 0.000 claims description 55
- 238000009413 insulation Methods 0.000 claims description 55
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 238000001020 plasma etching Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 388
- 239000010410 layer Substances 0.000 description 83
- 150000004767 nitrides Chemical class 0.000 description 44
- 239000000758 substrate Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001272982A JP5037766B2 (ja) | 2001-09-10 | 2001-09-10 | 半導体装置の製造方法 |
JP272982/2001 | 2001-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1507662A true CN1507662A (zh) | 2004-06-23 |
CN1330001C CN1330001C (zh) | 2007-08-01 |
Family
ID=19098259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028096606A Expired - Fee Related CN1330001C (zh) | 2001-09-10 | 2002-09-05 | 半导体器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7211517B2 (zh) |
JP (1) | JP5037766B2 (zh) |
CN (1) | CN1330001C (zh) |
WO (1) | WO2003023865A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012003657A1 (zh) * | 2010-07-06 | 2012-01-12 | 中国科学院上海微系统与信息技术研究所 | Soi高压功率器件的制备方法 |
CN108269822A (zh) * | 2016-12-29 | 2018-07-10 | 乐金显示有限公司 | 电致发光显示设备及其制备方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4304884B2 (ja) | 2001-06-06 | 2009-07-29 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP4154578B2 (ja) | 2002-12-06 | 2008-09-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2006222101A (ja) * | 2003-01-10 | 2006-08-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100588647B1 (ko) * | 2003-12-30 | 2006-06-12 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
KR100649874B1 (ko) * | 2005-12-29 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 에스오아이 웨이퍼를 이용한 트랜지스터 제조 방법 |
TWI409912B (zh) * | 2009-07-03 | 2013-09-21 | Vanguard Int Semiconduct Corp | 高壓半導體元件之間的深溝槽結構的製造方法 |
JP5234521B2 (ja) * | 2009-08-21 | 2013-07-10 | Tdk株式会社 | 電子部品及びその製造方法 |
JP2011049248A (ja) * | 2009-08-25 | 2011-03-10 | Oki Semiconductor Co Ltd | エッチング検査方法 |
US8207025B2 (en) | 2010-04-09 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP5959296B2 (ja) * | 2011-05-13 | 2016-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置およびその製造方法 |
JP5877982B2 (ja) * | 2011-09-22 | 2016-03-08 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
CN103822735A (zh) * | 2012-11-16 | 2014-05-28 | 无锡华润上华半导体有限公司 | 一种压力传感器用晶片结构及该晶片结构的加工方法 |
CN104319256A (zh) * | 2014-09-24 | 2015-01-28 | 上海华虹宏力半导体制造有限公司 | 窄有源区的隔离结构及其制造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4799991A (en) * | 1987-11-02 | 1989-01-24 | Motorola, Inc. | Process for preferentially etching polycrystalline silicon |
JPH0821619B2 (ja) * | 1989-10-13 | 1996-03-04 | 株式会社東芝 | 半導体装置 |
US5094712A (en) * | 1990-10-09 | 1992-03-10 | Micron Technology, Inc. | One chamber in-situ etch process for oxide and conductive material |
JPH0621018A (ja) * | 1992-06-29 | 1994-01-28 | Sony Corp | ドライエッチング方法 |
JP2551724B2 (ja) * | 1993-03-04 | 1996-11-06 | 株式会社高度映像技術研究所 | 薄膜半導体装置およびその製造方法 |
JP2510820B2 (ja) * | 1993-03-04 | 1996-06-26 | 株式会社高度映像技術研究所 | 薄膜半導体装置およびその製造方法 |
US5767018A (en) * | 1995-11-08 | 1998-06-16 | Advanced Micro Devices, Inc. | Method of etching a polysilicon pattern |
JP3604791B2 (ja) * | 1995-11-09 | 2004-12-22 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5874363A (en) * | 1996-05-13 | 1999-02-23 | Kabushiki Kaisha Toshiba | Polycide etching with HCL and chlorine |
JPH09306865A (ja) * | 1996-05-13 | 1997-11-28 | Toshiba Corp | 半導体装置の製造方法 |
JP3447958B2 (ja) | 1997-06-19 | 2003-09-16 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR100273220B1 (ko) | 1997-07-31 | 2000-12-15 | 김영환 | 반도체소자의제조방법 |
KR100259352B1 (ko) * | 1998-01-09 | 2000-08-01 | 김영환 | 반도체 소자의 다층막 건식각 방법 |
US6312616B1 (en) * | 1998-12-03 | 2001-11-06 | Applied Materials, Inc. | Plasma etching of polysilicon using fluorinated gas mixtures |
KR100349366B1 (ko) * | 1999-06-28 | 2002-08-21 | 주식회사 하이닉스반도체 | 에스오아이 소자 및 그의 제조방법 |
JP4202563B2 (ja) * | 1999-11-18 | 2008-12-24 | 株式会社東芝 | 半導体装置 |
US6905800B1 (en) * | 2000-11-21 | 2005-06-14 | Stephen Yuen | Etching a substrate in a process zone |
US6599813B2 (en) * | 2001-06-29 | 2003-07-29 | International Business Machines Corporation | Method of forming shallow trench isolation for thin silicon-on-insulator substrates |
US6627510B1 (en) * | 2002-03-29 | 2003-09-30 | Sharp Laboratories Of America, Inc. | Method of making self-aligned shallow trench isolation |
-
2001
- 2001-09-10 JP JP2001272982A patent/JP5037766B2/ja not_active Expired - Fee Related
-
2002
- 2002-09-05 US US10/476,978 patent/US7211517B2/en not_active Expired - Fee Related
- 2002-09-05 WO PCT/JP2002/009043 patent/WO2003023865A1/ja active Application Filing
- 2002-09-05 CN CNB028096606A patent/CN1330001C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012003657A1 (zh) * | 2010-07-06 | 2012-01-12 | 中国科学院上海微系统与信息技术研究所 | Soi高压功率器件的制备方法 |
CN108269822A (zh) * | 2016-12-29 | 2018-07-10 | 乐金显示有限公司 | 电致发光显示设备及其制备方法 |
CN108269822B (zh) * | 2016-12-29 | 2022-05-13 | 乐金显示有限公司 | 电致发光显示设备及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005235791A (ja) | 2005-09-02 |
JP5037766B2 (ja) | 2012-10-03 |
US20040209438A1 (en) | 2004-10-21 |
CN1330001C (zh) | 2007-08-01 |
WO2003023865A1 (fr) | 2003-03-20 |
US7211517B2 (en) | 2007-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1205664C (zh) | 半导体装置及其制造方法 | |
CN1187811C (zh) | 半导体装置及其制造方法 | |
CN1249816C (zh) | 半导体装置及其制造方法 | |
CN1153257C (zh) | 半导体衬底的处理方法和半导体衬底 | |
CN100342539C (zh) | 半导体装置和半导体装置的制造方法 | |
CN1155072C (zh) | 具有沟槽隔离结构的半导体器件及其制造方法 | |
CN1303698C (zh) | 半导体器件及其制造方法 | |
CN1210780C (zh) | 槽型元件分离结构 | |
CN1246909C (zh) | 半导体器件及其制造方法 | |
CN1507662A (zh) | 半导体器件及其制造方法 | |
CN1166004C (zh) | 半导体装置及其制造方法 | |
CN1674222A (zh) | 半导体基板、半导体装置、及它们的制造方法 | |
CN1725511A (zh) | 半导体器件及其制造方法 | |
CN1956223A (zh) | 半导体装置及其制造方法 | |
CN1519946A (zh) | 半导体器件 | |
CN1921083A (zh) | 半导体器件的制造方法 | |
CN1909243A (zh) | 半导体装置及其制造方法 | |
CN101030557A (zh) | 半导体器件及其制造方法 | |
CN1115716C (zh) | 半导体衬底的处理方法和半导体衬底 | |
CN1855495A (zh) | 具有垂直定向的栅电极的场效应晶体管及其制造方法 | |
CN1705137A (zh) | 半导体装置 | |
CN1828831A (zh) | 半导体衬底的形成方法及形成的半导体衬底 | |
CN1728388A (zh) | 半导体存储装置及其制造方法 | |
CN1649160A (zh) | 半导体装置及其制造方法 | |
CN1421914A (zh) | 半导体装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100805 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORP. Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070801 Termination date: 20180905 |
|
CF01 | Termination of patent right due to non-payment of annual fee |