CN1705137A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN1705137A CN1705137A CNA2005100760227A CN200510076022A CN1705137A CN 1705137 A CN1705137 A CN 1705137A CN A2005100760227 A CNA2005100760227 A CN A2005100760227A CN 200510076022 A CN200510076022 A CN 200510076022A CN 1705137 A CN1705137 A CN 1705137A
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- China
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- thickness
- insulation film
- separating insulation
- zone
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000009413 insulation Methods 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 46
- 238000010276 construction Methods 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 144
- 238000005530 etching Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000005611 electricity Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- 238000007667 floating Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
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- 101100522110 Oryza sativa subsp. japonica PHT1-10 gene Proteins 0.000 description 4
- 101100522109 Pinus taeda PT10 gene Proteins 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 101100230233 Arabidopsis thaliana GT20 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 101000929885 Bacillus subtilis (strain 168) Isochorismatase Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP165480/04 | 2004-06-03 | ||
JP2004165480A JP4811901B2 (ja) | 2004-06-03 | 2004-06-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1705137A true CN1705137A (zh) | 2005-12-07 |
CN100533771C CN100533771C (zh) | 2009-08-26 |
Family
ID=35446744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100760227A Expired - Fee Related CN100533771C (zh) | 2004-06-03 | 2005-06-03 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (6) | US7307318B2 (zh) |
JP (1) | JP4811901B2 (zh) |
KR (1) | KR20060047948A (zh) |
CN (1) | CN100533771C (zh) |
TW (1) | TW200603244A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937930A (zh) * | 2010-08-31 | 2011-01-05 | 清华大学 | 一种高性能场效应晶体管及其形成方法 |
CN104505420A (zh) * | 2014-12-24 | 2015-04-08 | 苏州矩阵光电有限公司 | 一种光电探测器及其制备方法 |
US11427436B2 (en) | 2018-04-06 | 2022-08-30 | Kone Corporation | Resetting device for resetting an actuator for actuating a safety gear of an elevator |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4811901B2 (ja) * | 2004-06-03 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
FR2888665B1 (fr) * | 2005-07-18 | 2007-10-19 | St Microelectronics Crolles 2 | Procede de realisation d'un transistor mos et circuit integre correspondant |
KR100758494B1 (ko) * | 2005-12-28 | 2007-09-12 | 동부일렉트로닉스 주식회사 | 반도체 장치의 소자 분리 영역 및 그 형성 방법 |
JP5052813B2 (ja) * | 2006-04-12 | 2012-10-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7732287B2 (en) | 2006-05-02 | 2010-06-08 | Honeywell International Inc. | Method of forming a body-tie |
US7750429B2 (en) * | 2007-05-15 | 2010-07-06 | International Business Machines Corporation | Self-aligned and extended inter-well isolation structure |
EP2269226A1 (en) | 2008-03-13 | 2011-01-05 | S.O.I.Tec Silicon on Insulator Technologies | Substrate having a charged zone in an insulating buried layer |
US7964897B2 (en) | 2008-07-22 | 2011-06-21 | Honeywell International Inc. | Direct contact to area efficient body tie process flow |
US8680617B2 (en) * | 2009-10-06 | 2014-03-25 | International Business Machines Corporation | Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS |
FR2991502B1 (fr) * | 2012-05-29 | 2014-07-11 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre ayant des tranchees d'isolation avec des profondeurs distinctes |
FR3067516B1 (fr) | 2017-06-12 | 2020-07-10 | Stmicroelectronics (Rousset) Sas | Realisation de regions semiconductrices dans une puce electronique |
FR3068507B1 (fr) | 2017-06-30 | 2020-07-10 | Stmicroelectronics (Rousset) Sas | Realisation de regions semiconductrices dans une puce electronique |
US10784119B2 (en) * | 2018-10-08 | 2020-09-22 | Globalfoundries Inc. | Multiple patterning with lithographically-defined cuts |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11251318A (ja) * | 1998-03-06 | 1999-09-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP4540146B2 (ja) * | 1998-12-24 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2001230315A (ja) * | 2000-02-17 | 2001-08-24 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP4969715B2 (ja) * | 2000-06-06 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4823408B2 (ja) * | 2000-06-08 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
KR100426485B1 (ko) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 제조 방법 |
JP2003243662A (ja) * | 2002-02-14 | 2003-08-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法、半導体ウェハ |
US6828212B2 (en) * | 2002-10-22 | 2004-12-07 | Atmel Corporation | Method of forming shallow trench isolation structure in a semiconductor device |
KR100706737B1 (ko) * | 2003-08-28 | 2007-04-12 | 가부시끼가이샤 르네사스 테크놀로지 | 반도체 기억 장치 및 그 제조 방법 |
JP3963463B2 (ja) * | 2003-12-24 | 2007-08-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4811901B2 (ja) * | 2004-06-03 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2004
- 2004-06-03 JP JP2004165480A patent/JP4811901B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-12 TW TW094115346A patent/TW200603244A/zh unknown
- 2005-05-16 KR KR1020050040724A patent/KR20060047948A/ko not_active Application Discontinuation
- 2005-05-26 US US11/137,586 patent/US7307318B2/en not_active Expired - Fee Related
- 2005-06-03 CN CNB2005100760227A patent/CN100533771C/zh not_active Expired - Fee Related
-
2007
- 2007-07-17 US US11/826,569 patent/US7332776B2/en not_active Expired - Fee Related
- 2007-10-31 US US11/979,120 patent/US20080067593A1/en not_active Abandoned
- 2007-10-31 US US11/979,119 patent/US20080061372A1/en not_active Abandoned
- 2007-12-21 US US12/003,277 patent/US20080128810A1/en not_active Abandoned
- 2007-12-21 US US12/003,273 patent/US20080128814A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101937930A (zh) * | 2010-08-31 | 2011-01-05 | 清华大学 | 一种高性能场效应晶体管及其形成方法 |
CN104505420A (zh) * | 2014-12-24 | 2015-04-08 | 苏州矩阵光电有限公司 | 一种光电探测器及其制备方法 |
US11427436B2 (en) | 2018-04-06 | 2022-08-30 | Kone Corporation | Resetting device for resetting an actuator for actuating a safety gear of an elevator |
Also Published As
Publication number | Publication date |
---|---|
US7332776B2 (en) | 2008-02-19 |
US7307318B2 (en) | 2007-12-11 |
US20080067593A1 (en) | 2008-03-20 |
US20050269637A1 (en) | 2005-12-08 |
US20080061372A1 (en) | 2008-03-13 |
JP2005347520A (ja) | 2005-12-15 |
KR20060047948A (ko) | 2006-05-18 |
US20070257330A1 (en) | 2007-11-08 |
JP4811901B2 (ja) | 2011-11-09 |
CN100533771C (zh) | 2009-08-26 |
US20080128814A1 (en) | 2008-06-05 |
US20080128810A1 (en) | 2008-06-05 |
TW200603244A (en) | 2006-01-16 |
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