CN1312958A - 集成无机/有机互补薄膜晶体管电路及其制造方法 - Google Patents

集成无机/有机互补薄膜晶体管电路及其制造方法 Download PDF

Info

Publication number
CN1312958A
CN1312958A CN99809715A CN99809715A CN1312958A CN 1312958 A CN1312958 A CN 1312958A CN 99809715 A CN99809715 A CN 99809715A CN 99809715 A CN99809715 A CN 99809715A CN 1312958 A CN1312958 A CN 1312958A
Authority
CN
China
Prior art keywords
inorganic
transistor
organic
thin
otft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99809715A
Other languages
English (en)
Chinese (zh)
Inventor
T·杰克森
M·邦泽
D·B·托马松
K·哈根
D·J·贡德拉赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FILM ELECTRONIC Co Ltd
Ensurge Micropower ASA
Original Assignee
FILM ELECTRONIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO985729A external-priority patent/NO985729D0/no
Application filed by FILM ELECTRONIC Co Ltd filed Critical FILM ELECTRONIC Co Ltd
Publication of CN1312958A publication Critical patent/CN1312958A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN99809715A 1998-06-19 1999-06-18 集成无机/有机互补薄膜晶体管电路及其制造方法 Pending CN1312958A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8983098P 1998-06-19 1998-06-19
US60/089,830 1998-06-19
NO985729A NO985729D0 (no) 1998-12-08 1998-12-08 Integrert uorganisk/organisk komplementµr tynnfilmtransistorkrets
NO19985729 1998-12-08

Publications (1)

Publication Number Publication Date
CN1312958A true CN1312958A (zh) 2001-09-12

Family

ID=26648917

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99809715A Pending CN1312958A (zh) 1998-06-19 1999-06-18 集成无机/有机互补薄膜晶体管电路及其制造方法

Country Status (8)

Country Link
US (1) US6528816B1 (ja)
EP (1) EP1093663A2 (ja)
JP (1) JP3597468B2 (ja)
KR (1) KR100393324B1 (ja)
CN (1) CN1312958A (ja)
AU (1) AU751935B2 (ja)
CA (1) CA2334862C (ja)
WO (1) WO1999066540A2 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100349293C (zh) * 2001-12-28 2007-11-14 摩托罗拉公司 有机半导体器件及其制造方法
CN100364108C (zh) * 2002-08-28 2008-01-23 中国科学院长春应用化学研究所 含有有机半导体的夹心型场效应晶体管及制作方法
CN100424889C (zh) * 2004-11-29 2008-10-08 国际商业机器公司 具有减小的栅极-源极/漏极电容的半导体晶体管
CN1996610B (zh) * 2006-01-05 2010-11-03 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
US8217432B2 (en) 2006-10-06 2012-07-10 Polyic Gmbh & Co. Kg Field effect transistor and electric circuit
CN102931350A (zh) * 2012-11-20 2013-02-13 上海交通大学 一种溶液法双极性薄膜晶体管及其制备方法
US8383449B2 (en) 2006-01-05 2013-02-26 Samsung Display Co., Ltd. Method of forming a thin film transistor having openings formed therein
CN103579115A (zh) * 2013-11-11 2014-02-12 京东方科技集团股份有限公司 互补式薄膜晶体管及其制备方法、阵列基板、显示装置
CN105575992A (zh) * 2015-12-22 2016-05-11 深圳市华星光电技术有限公司 互补金属氧化物半导体器件及其制备方法
CN105609502A (zh) * 2016-02-29 2016-05-25 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
CN105742308A (zh) * 2016-02-29 2016-07-06 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
CN106571365A (zh) * 2016-11-08 2017-04-19 深圳市华星光电技术有限公司 一种互补型薄膜晶体管及其制作方法
CN106653810A (zh) * 2016-12-15 2017-05-10 武汉华星光电技术有限公司 Oled显示面板以及oled显示装置

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269504A (ja) 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
EP1208612B1 (en) * 1999-08-31 2011-01-12 E Ink Corporation Method for forming a patterned semiconductor film
WO2001017029A1 (en) 1999-08-31 2001-03-08 E Ink Corporation Transistor for an electronically driven display
GB9929614D0 (en) * 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Method of manufacturing a transistor
JP2002215065A (ja) 2000-11-02 2002-07-31 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器
US7439096B2 (en) * 2001-02-21 2008-10-21 Lucent Technologies Inc. Semiconductor device encapsulation
JP4841751B2 (ja) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
US6433359B1 (en) 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
JP3823312B2 (ja) * 2001-10-18 2006-09-20 日本電気株式会社 有機薄膜トランジスタ
US6963080B2 (en) * 2001-11-26 2005-11-08 International Business Machines Corporation Thin film transistors using solution processed pentacene precursor as organic semiconductor
US6768132B2 (en) 2002-03-07 2004-07-27 3M Innovative Properties Company Surface modified organic thin film transistors
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US7294875B2 (en) * 2002-06-07 2007-11-13 Axon Technologies Corporation Nanoscale programmable structures and methods of forming and using same
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2006513578A (ja) * 2003-01-14 2006-04-20 ポリアイシー ゲーエムベーハー ウント コー、 カーゲー 有機電界効果トランジスタおよび集積回路
KR20050109963A (ko) * 2003-03-07 2005-11-22 코닌클리케 필립스 일렉트로닉스 엔.브이. 전자 장치 제조 방법
US7384814B2 (en) * 2003-05-20 2008-06-10 Polymer Vision Limited Field effect transistor including an organic semiconductor and a dielectric layer having a substantially same pattern
TWI238449B (en) * 2003-06-06 2005-08-21 Pioneer Corp Organic semiconductor device and method of manufacture of same
DE10330825A1 (de) * 2003-07-08 2005-06-23 Infineon Technologies Ag Integrierter Schaltkreis
JP2005101555A (ja) * 2003-08-28 2005-04-14 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
US7554121B2 (en) * 2003-12-26 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
KR100592270B1 (ko) * 2004-05-18 2006-06-21 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7582534B2 (en) * 2004-11-18 2009-09-01 International Business Machines Corporation Chemical doping of nano-components
TWI248212B (en) * 2004-12-06 2006-01-21 Ritdisplay Corp Organic electroluminescent device, pixel structure, array and driving method thereof
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
JP4667096B2 (ja) * 2005-03-25 2011-04-06 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
KR20060104092A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
DE102005017655B4 (de) * 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
KR20060116534A (ko) * 2005-05-10 2006-11-15 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
KR20070009013A (ko) 2005-07-14 2007-01-18 삼성전자주식회사 평판표시장치 및 평판표시장치의 제조방법
DE102005035590A1 (de) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Elektronisches Bauelement
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005042166A1 (de) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organisches Bauelement und ein solches umfassende elektrische Schaltung
DE102005044306A1 (de) * 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
US7397072B2 (en) * 2005-12-01 2008-07-08 Board Of Regents, The University Of Texas System Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device
TWI298211B (en) * 2006-01-11 2008-06-21 Ind Tech Res Inst Thin film transistor, organic electro-luminescent display device and method of fabricating the same
JP2008010566A (ja) * 2006-06-28 2008-01-17 Ricoh Co Ltd 半導体デバイス
JP5104057B2 (ja) * 2007-06-21 2012-12-19 セイコーエプソン株式会社 半導体装置の製造方法
JP2009021477A (ja) 2007-07-13 2009-01-29 Sony Corp 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
US7910929B2 (en) * 2007-12-18 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5411528B2 (ja) * 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
JP2010034343A (ja) 2008-07-30 2010-02-12 Sumitomo Chemical Co Ltd 半導体装置の製造方法および半導体装置
US8686404B2 (en) 2008-12-08 2014-04-01 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
US8441047B2 (en) * 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5548976B2 (ja) 2009-06-25 2014-07-16 セイコーエプソン株式会社 半導体装置
WO2011010546A1 (en) 2009-07-24 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102011874B1 (ko) 2013-03-05 2019-08-19 삼성전자주식회사 박막 트랜지스터를 포함하는 표시 장치
CN104508807A (zh) * 2013-03-22 2015-04-08 深圳市柔宇科技有限公司 薄膜晶体管及其像素单元的制造方法
CN109643521A (zh) 2016-06-02 2019-04-16 长春富乐玻显示技术有限公司 Oled驱动电路及其制备方法和显示装置
CN106252362B (zh) * 2016-08-31 2019-07-12 深圳市华星光电技术有限公司 一种阵列基板及其制备方法
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation
JP2022130245A (ja) * 2021-02-25 2022-09-06 国立大学法人 東京大学 無機／有機ハイブリッド相補型半導体デバイス及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2694531B2 (ja) * 1988-03-28 1997-12-24 キヤノン株式会社 Ｍｉｍ型素子の駆動方法
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US5612228A (en) 1996-04-24 1997-03-18 Motorola Method of making CMOS with organic and inorganic semiconducting region
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
US6407408B1 (en) * 2001-03-12 2002-06-18 Universal Display Corporation Method for patterning devices

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100349293C (zh) * 2001-12-28 2007-11-14 摩托罗拉公司 有机半导体器件及其制造方法
CN100364108C (zh) * 2002-08-28 2008-01-23 中国科学院长春应用化学研究所 含有有机半导体的夹心型场效应晶体管及制作方法
CN100424889C (zh) * 2004-11-29 2008-10-08 国际商业机器公司 具有减小的栅极-源极/漏极电容的半导体晶体管
CN1996610B (zh) * 2006-01-05 2010-11-03 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
US8383449B2 (en) 2006-01-05 2013-02-26 Samsung Display Co., Ltd. Method of forming a thin film transistor having openings formed therein
US8217432B2 (en) 2006-10-06 2012-07-10 Polyic Gmbh & Co. Kg Field effect transistor and electric circuit
CN102931350A (zh) * 2012-11-20 2013-02-13 上海交通大学 一种溶液法双极性薄膜晶体管及其制备方法
US10083988B2 (en) 2013-11-11 2018-09-25 Boe Technology Group Co., Ltd. Complementary thin film transistor and manufacturing method thereof, array substrate, display apparatus
CN103579115A (zh) * 2013-11-11 2014-02-12 京东方科技集团股份有限公司 互补式薄膜晶体管及其制备方法、阵列基板、显示装置
WO2015067054A1 (zh) * 2013-11-11 2015-05-14 京东方科技集团股份有限公司 互补式薄膜晶体管及其制备方法、阵列基板和显示装置
CN103579115B (zh) * 2013-11-11 2015-11-25 京东方科技集团股份有限公司 互补式薄膜晶体管及其制备方法、阵列基板、显示装置
CN105575992A (zh) * 2015-12-22 2016-05-11 深圳市华星光电技术有限公司 互补金属氧化物半导体器件及其制备方法
CN105742308A (zh) * 2016-02-29 2016-07-06 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
WO2017147970A1 (zh) * 2016-02-29 2017-09-08 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
CN105609502A (zh) * 2016-02-29 2016-05-25 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
US10192931B2 (en) 2016-02-29 2019-01-29 Shenzhen China Star Optoelectronics Technology Co. Ltd. Complementary thin film transistor and manufacturing method thereof
CN105742308B (zh) * 2016-02-29 2019-09-13 深圳市华星光电技术有限公司 互补型薄膜晶体管及其制造方法
CN106571365A (zh) * 2016-11-08 2017-04-19 深圳市华星光电技术有限公司 一种互补型薄膜晶体管及其制作方法
CN106653810A (zh) * 2016-12-15 2017-05-10 武汉华星光电技术有限公司 Oled显示面板以及oled显示装置
WO2018107554A1 (zh) * 2016-12-15 2018-06-21 武汉华星光电技术有限公司 Oled显示面板以及oled显示装置
CN106653810B (zh) * 2016-12-15 2020-09-04 武汉华星光电技术有限公司 Oled显示面板以及oled显示装置

Also Published As

Publication number Publication date
EP1093663A2 (en) 2001-04-25
AU4295999A (en) 2000-01-05
WO1999066540A2 (en) 1999-12-23
KR100393324B1 (ko) 2003-07-31
JP3597468B2 (ja) 2004-12-08
CA2334862A1 (en) 1999-12-23
AU751935B2 (en) 2002-08-29
JP2002518844A (ja) 2002-06-25
KR20010053039A (ko) 2001-06-25
CA2334862C (en) 2006-06-13
WO1999066540A9 (en) 2000-05-04
WO1999066540A3 (en) 2000-02-10
US6528816B1 (en) 2003-03-04

Similar Documents

Publication Publication Date Title
CN1312958A (zh) 集成无机/有机互补薄膜晶体管电路及其制造方法
US6284562B1 (en) Thin film transistors
Kagan et al. Thin-film transistors
US6452207B1 (en) Organic semiconductor devices
CN101154346B (zh) 影像显示系统及其制造方法
Cheng et al. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 C
CN101926016B (zh) 有机薄膜晶体管、有源矩阵有机光学器件及其制造方法
KR20000017418A (ko) 박막 트랜지스터
CN1742392A (zh) 电子器件
CN113809182B (zh) 金属氧化物薄膜晶体管及其制备方法、阵列基板
KR101694270B1 (ko) 고속전자센서용 기판 및 그 제조방법
CN1674320A (zh) 有机场效应晶体管及制造方法和含该晶体管的平板显示器
CN1741285A (zh) 结可变电容
US20210265506A1 (en) Display device and method of manufacturing the same
US5053347A (en) Amorphous silicon thin film transistor with a depletion gate
CN110233156A (zh) 薄膜晶体管基板的制作方法及薄膜晶体管基板
CN113363328A (zh) 一种薄膜晶体管以及薄膜晶体管的制备方法
CN111146212B (zh) 半导体基板
CN108376740B (zh) 复合沟道晶体管及其制备方法
CN1157807C (zh) 一种有机薄膜场效应晶体管及其制备方法
CN113363329A (zh) 一种薄膜晶体管以及薄膜晶体管的制备方法
JP2002299644A (ja) Ｔｒｓ（ｔｒｉｏｄｉｃｒｅｃｔｉｆｉｅｒｓｗｉｔｃｈ）素子
CN101055918A (zh) 有机半导体元件的接面结构及有机晶体管及其制造方法
CN1719616A (zh) 具有双栅极结构的非晶硅薄膜晶体管及其制造方法
CN101043057A (zh) 可变电容器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned
C20 Patent right or utility model deemed to be abandoned or is abandoned