CN1305228A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1305228A
CN1305228A CN00118811A CN00118811A CN1305228A CN 1305228 A CN1305228 A CN 1305228A CN 00118811 A CN00118811 A CN 00118811A CN 00118811 A CN00118811 A CN 00118811A CN 1305228 A CN1305228 A CN 1305228A
Authority
CN
China
Prior art keywords
extrinsic region
contact hole
film
region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00118811A
Other languages
English (en)
Chinese (zh)
Inventor
芦田基
神谷好一
浜砂荣二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1305228A publication Critical patent/CN1305228A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN00118811A 1999-10-25 2000-04-29 半导体器件 Pending CN1305228A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP302270/1999 1999-10-25
JP30227099A JP2001127174A (ja) 1999-10-25 1999-10-25 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN200910004381XA Division CN101582427B (zh) 1999-10-25 2000-04-29 半导体器件

Publications (1)

Publication Number Publication Date
CN1305228A true CN1305228A (zh) 2001-07-25

Family

ID=17906998

Family Applications (2)

Application Number Title Priority Date Filing Date
CN00118811A Pending CN1305228A (zh) 1999-10-25 2000-04-29 半导体器件
CN200910004381XA Expired - Fee Related CN101582427B (zh) 1999-10-25 2000-04-29 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200910004381XA Expired - Fee Related CN101582427B (zh) 1999-10-25 2000-04-29 半导体器件

Country Status (6)

Country Link
US (1) US6531747B1 (cg-RX-API-DMAC10.html)
JP (1) JP2001127174A (cg-RX-API-DMAC10.html)
KR (1) KR100377082B1 (cg-RX-API-DMAC10.html)
CN (2) CN1305228A (cg-RX-API-DMAC10.html)
DE (1) DE10019708A1 (cg-RX-API-DMAC10.html)
TW (1) TW478075B (cg-RX-API-DMAC10.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464416B1 (ko) * 2002-05-14 2005-01-03 삼성전자주식회사 증가된 유효 채널 길이를 가지는 반도체 소자의 제조 방법
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
DE102004047751B3 (de) * 2004-09-30 2006-05-04 Infineon Technologies Ag Verfahren zur Herstellung von Transistorstrukturen für DRAM-Halbleiterbauelemente
KR100764737B1 (ko) * 2006-02-09 2007-10-08 삼성전자주식회사 에스램 셀 및 그 형성 방법
JP2010010260A (ja) * 2008-06-25 2010-01-14 Panasonic Corp 半導体記憶装置及びその製造方法
US9859286B2 (en) * 2014-12-23 2018-01-02 International Business Machines Corporation Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices
CN114156271A (zh) * 2015-04-30 2022-03-08 联华电子股份有限公司 静态随机存取存储器
CN111863069B (zh) * 2015-06-17 2022-05-10 联华电子股份有限公司 八晶体管静态随机存取存储器的布局图案与形成方法
KR102618350B1 (ko) * 2016-12-14 2023-12-28 삼성디스플레이 주식회사 디스플레이 장치
KR102906655B1 (ko) * 2020-01-22 2025-12-31 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN114446887B (zh) * 2020-11-04 2024-10-18 长鑫存储技术有限公司 半导体结构制作方法及半导体结构

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797626B2 (ja) 1987-10-31 1995-10-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0697192A (ja) * 1992-07-29 1994-04-08 Kawasaki Steel Corp 半導体装置及びその製造方法
JPH07106452A (ja) * 1993-10-04 1995-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2658844B2 (ja) 1993-12-16 1997-09-30 日本電気株式会社 半導体記憶装置
JP2689888B2 (ja) * 1993-12-30 1997-12-10 日本電気株式会社 半導体装置及びその製造方法
JP3259529B2 (ja) 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
US5763910A (en) * 1995-01-31 1998-06-09 Fujitsu Limited Semiconductor device having a through-hole formed on diffused layer by self-alignment
JP3518122B2 (ja) * 1996-01-12 2004-04-12 ソニー株式会社 半導体装置の製造方法
JP3795634B2 (ja) 1996-06-19 2006-07-12 株式会社東芝 半導体装置の製造方法
JP3525637B2 (ja) 1996-08-09 2004-05-10 株式会社デンソー 半導体装置
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3216559B2 (ja) * 1997-02-12 2001-10-09 日本電気株式会社 半導体装置の製造方法
JPH1117026A (ja) * 1997-06-27 1999-01-22 Sony Corp 半導体記憶装置
JPH1187653A (ja) * 1997-09-09 1999-03-30 Fujitsu Ltd 半導体装置およびその製造方法
JPH11121710A (ja) * 1997-10-09 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
JPH11176833A (ja) 1997-12-10 1999-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH11186236A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp エッチング方法
JPH11233628A (ja) 1998-02-16 1999-08-27 Mitsubishi Electric Corp コンタクト構造の製造方法

Also Published As

Publication number Publication date
DE10019708A1 (de) 2001-05-10
KR20010039584A (ko) 2001-05-15
CN101582427A (zh) 2009-11-18
US6531747B1 (en) 2003-03-11
JP2001127174A (ja) 2001-05-11
CN101582427B (zh) 2011-05-11
TW478075B (en) 2002-03-01
KR100377082B1 (ko) 2003-03-26

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