CN1213482C - 具有提供在存储单元中的阱抽头的半导体器件 - Google Patents
具有提供在存储单元中的阱抽头的半导体器件 Download PDFInfo
- Publication number
- CN1213482C CN1213482C CNB021184224A CN02118422A CN1213482C CN 1213482 C CN1213482 C CN 1213482C CN B021184224 A CNB021184224 A CN B021184224A CN 02118422 A CN02118422 A CN 02118422A CN 1213482 C CN1213482 C CN 1213482C
- Authority
- CN
- China
- Prior art keywords
- memory cell
- mos transistor
- conductive type
- link
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000011229 interlayer Substances 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 96
- 230000003252 repetitive effect Effects 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000002344 surface layer Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
Landscapes
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP374515/2001 | 2001-12-07 | ||
JP2001374515A JP4118045B2 (ja) | 2001-12-07 | 2001-12-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1423333A CN1423333A (zh) | 2003-06-11 |
CN1213482C true CN1213482C (zh) | 2005-08-03 |
Family
ID=19183065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021184224A Expired - Lifetime CN1213482C (zh) | 2001-12-07 | 2002-04-24 | 具有提供在存储单元中的阱抽头的半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6727557B2 (zh) |
JP (1) | JP4118045B2 (zh) |
KR (1) | KR100788132B1 (zh) |
CN (1) | CN1213482C (zh) |
TW (1) | TW546785B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103180930A (zh) * | 2010-08-06 | 2013-06-26 | 阿尔特拉公司 | N阱/p阱结构带结构 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6780756B1 (en) * | 2003-02-28 | 2004-08-24 | Texas Instruments Incorporated | Etch back of interconnect dielectrics |
JP5172069B2 (ja) * | 2004-04-27 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP4633126B2 (ja) * | 2008-01-15 | 2011-02-16 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8017476B2 (en) | 2008-12-02 | 2011-09-13 | Suvolta, Inc. | Method for manufacturing a junction field effect transistor having a double gate |
US8305829B2 (en) * | 2009-02-23 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same |
US8305790B2 (en) * | 2009-03-16 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical anti-fuse and related applications |
US8957482B2 (en) * | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
US8912602B2 (en) * | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
US8461015B2 (en) * | 2009-07-08 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI structure and method of forming bottom void in same |
US8187928B2 (en) | 2010-09-21 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuits |
US8472227B2 (en) * | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
US8264021B2 (en) * | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
US8629478B2 (en) * | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US8298925B2 (en) | 2010-11-08 | 2012-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
US8482073B2 (en) * | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US9484462B2 (en) * | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
US8623728B2 (en) * | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US20110097867A1 (en) * | 2009-10-22 | 2011-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of controlling gate thicknesses in forming fusi gates |
US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
US8329568B1 (en) * | 2010-05-03 | 2012-12-11 | Xilinx, Inc. | Semiconductor device and method for making the same |
US8603924B2 (en) | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
US9048181B2 (en) | 2010-11-08 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8769446B2 (en) | 2010-11-12 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
US8592915B2 (en) | 2011-01-25 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped oxide for shallow trench isolation (STI) |
US8877602B2 (en) | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
US8431453B2 (en) | 2011-03-31 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure |
US20120261738A1 (en) * | 2012-06-29 | 2012-10-18 | Dustin Do | N-Well/P-Well Strap Structures |
US9627529B1 (en) * | 2015-05-21 | 2017-04-18 | Altera Corporation | Well-tap structures for analog matching transistor arrays |
US10431576B1 (en) * | 2018-04-20 | 2019-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell array and method of manufacturing same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US564572A (en) * | 1896-07-21 | Samuel a | ||
US4884118A (en) * | 1986-05-19 | 1989-11-28 | Lsi Logic Corporation | Double metal HCMOS compacted array |
DE4325804C3 (de) | 1993-07-31 | 2001-08-09 | Daimler Chrysler Ag | Verfahren zum Herstellen von hochohmigem Siliziumkarbid |
JPH08181225A (ja) | 1994-10-28 | 1996-07-12 | Nkk Corp | 半導体記憶装置 |
-
2001
- 2001-12-07 JP JP2001374515A patent/JP4118045B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-25 US US10/103,823 patent/US6727557B2/en not_active Expired - Lifetime
- 2002-04-24 CN CNB021184224A patent/CN1213482C/zh not_active Expired - Lifetime
- 2002-04-30 KR KR1020020023665A patent/KR100788132B1/ko active IP Right Grant
- 2002-05-03 TW TW091109236A patent/TW546785B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103180930A (zh) * | 2010-08-06 | 2013-06-26 | 阿尔特拉公司 | N阱/p阱结构带结构 |
CN103180930B (zh) * | 2010-08-06 | 2016-02-17 | 阿尔特拉公司 | N阱/p阱结构带结构 |
Also Published As
Publication number | Publication date |
---|---|
CN1423333A (zh) | 2003-06-11 |
KR100788132B1 (ko) | 2007-12-21 |
JP2003174105A (ja) | 2003-06-20 |
US20030107069A1 (en) | 2003-06-12 |
JP4118045B2 (ja) | 2008-07-16 |
TW546785B (en) | 2003-08-11 |
KR20030047666A (ko) | 2003-06-18 |
US6727557B2 (en) | 2004-04-27 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081219 Address after: Tokyo, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081219 |
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C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Kanagawa Patentee after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150515 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150515 Address after: Kanagawa Patentee after: SOCIONEXT Inc. Address before: Kanagawa Patentee before: FUJITSU MICROELECTRONICS Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050803 |