CN1499577A - 制造半导体器件的方法 - Google Patents
制造半导体器件的方法 Download PDFInfo
- Publication number
- CN1499577A CN1499577A CNA2003101023572A CN200310102357A CN1499577A CN 1499577 A CN1499577 A CN 1499577A CN A2003101023572 A CNA2003101023572 A CN A2003101023572A CN 200310102357 A CN200310102357 A CN 200310102357A CN 1499577 A CN1499577 A CN 1499577A
- Authority
- CN
- China
- Prior art keywords
- grid
- film
- injected
- alloy
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 229920005591 polysilicon Polymers 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000059 patterning Methods 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims description 63
- 229910045601 alloy Inorganic materials 0.000 claims description 44
- 239000000956 alloy Substances 0.000 claims description 44
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 239000002019 doping agent Substances 0.000 abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 239000000203 mixture Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 14
- 238000004380 ashing Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 8
- 229910000967 As alloy Inorganic materials 0.000 description 7
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229940090044 injection Drugs 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- -1 sulfuric acid peroxide Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317326/2002 | 2002-10-31 | ||
JP2002317326A JP4108444B2 (ja) | 2002-10-31 | 2002-10-31 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1499577A true CN1499577A (zh) | 2004-05-26 |
CN1316568C CN1316568C (zh) | 2007-05-16 |
Family
ID=32289634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101023572A Expired - Fee Related CN1316568C (zh) | 2002-10-31 | 2003-10-27 | 制造半导体器件的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6936520B2 (zh) |
JP (1) | JP4108444B2 (zh) |
CN (1) | CN1316568C (zh) |
TW (1) | TWI229374B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7932146B2 (en) | 2008-03-20 | 2011-04-26 | United Microelectronics Corp. | Metal gate transistor and polysilicon resistor and method for fabricating the same |
CN101552229B (zh) * | 2008-03-31 | 2012-04-11 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100588782B1 (ko) * | 2003-12-30 | 2006-06-14 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
JP2006040947A (ja) | 2004-07-22 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100684870B1 (ko) * | 2004-12-07 | 2007-02-20 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 형성 방법 |
US7622345B2 (en) * | 2005-03-17 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming fully silicided gate electrodes and unsilicided poly resistors |
TW200800240A (en) | 2005-11-22 | 2008-01-01 | Aderans Res Inst Inc | Hair follicle graft from tissue engineered skin |
US7985537B2 (en) | 2007-06-12 | 2011-07-26 | Aderans Research Institute, Inc. | Methods for determining the hair follicle inductive properties of a composition |
JP2008311457A (ja) * | 2007-06-15 | 2008-12-25 | Renesas Technology Corp | 半導体装置の製造方法 |
US8969151B2 (en) * | 2008-02-29 | 2015-03-03 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system employing resistance altering techniques |
JP5601026B2 (ja) * | 2010-05-21 | 2014-10-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR101800441B1 (ko) | 2010-10-22 | 2017-11-22 | 삼성전자주식회사 | 반도체 소자의 형성 방법 |
US8482078B2 (en) * | 2011-05-10 | 2013-07-09 | International Business Machines Corporation | Integrated circuit diode |
US9111756B2 (en) * | 2013-09-23 | 2015-08-18 | GlobalFoundries, Inc. | Integrated circuits with protected resistors and methods for fabricating the same |
CN109248337B (zh) * | 2018-09-19 | 2021-03-30 | 深圳齐康医疗器械有限公司 | 一种人工真皮修复材料及其制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61113269A (ja) * | 1984-11-08 | 1986-05-31 | Rohm Co Ltd | 半導体装置 |
JP2956181B2 (ja) * | 1990-09-19 | 1999-10-04 | 日本電気株式会社 | 抵抗素子を有する半導体装置 |
JP2934738B2 (ja) * | 1994-03-18 | 1999-08-16 | セイコーインスツルメンツ株式会社 | 半導体装置およびその製造方法 |
US5506158A (en) * | 1994-07-27 | 1996-04-09 | Texas Instruments Incorporated | BiCMOS process with surface channel PMOS transistor |
JP3348997B2 (ja) | 1994-11-17 | 2002-11-20 | 株式会社東芝 | 半導体装置の製造方法 |
DE19531629C1 (de) * | 1995-08-28 | 1997-01-09 | Siemens Ag | Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur |
US5734179A (en) * | 1995-12-12 | 1998-03-31 | Advanced Micro Devices, Inc. | SRAM cell having single layer polysilicon thin film transistors |
US5866451A (en) * | 1996-05-28 | 1999-02-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a semiconductor device having 4t sram and mixed-mode capacitor in logic |
JP2927257B2 (ja) | 1996-11-20 | 1999-07-28 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100215845B1 (ko) * | 1997-03-17 | 1999-08-16 | 구본준 | 반도체소자 제조방법 |
JPH11204738A (ja) * | 1998-01-19 | 1999-07-30 | Rohm Co Ltd | 半導体装置の製造方法 |
JP4392867B2 (ja) * | 1998-02-06 | 2010-01-06 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP3348070B2 (ja) | 1999-04-21 | 2002-11-20 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6180462B1 (en) * | 1999-06-07 | 2001-01-30 | United Microelectronics Corp. | Method of fabricating an analog integrated circuit with ESD protection |
US6156602A (en) * | 1999-08-06 | 2000-12-05 | Chartered Semiconductor Manufacturing Ltd. | Self-aligned precise high sheet RHO register for mixed-signal application |
JP2001168281A (ja) | 1999-12-08 | 2001-06-22 | Sony Corp | 半導体装置及びその製造方法 |
JP2002313940A (ja) * | 2001-04-10 | 2002-10-25 | Seiko Instruments Inc | 半導体装置の製造方法 |
US6727133B1 (en) * | 2002-11-21 | 2004-04-27 | Texas Instruments Incorporated | Integrated circuit resistors in a high performance CMOS process |
US6730554B1 (en) * | 2002-11-21 | 2004-05-04 | Texas Instruments Incorporated | Multi-layer silicide block process |
-
2002
- 2002-10-31 JP JP2002317326A patent/JP4108444B2/ja not_active Expired - Lifetime
-
2003
- 2003-09-30 US US10/673,354 patent/US6936520B2/en not_active Expired - Lifetime
- 2003-10-02 TW TW092127302A patent/TWI229374B/zh not_active IP Right Cessation
- 2003-10-27 CN CNB2003101023572A patent/CN1316568C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7932146B2 (en) | 2008-03-20 | 2011-04-26 | United Microelectronics Corp. | Metal gate transistor and polysilicon resistor and method for fabricating the same |
CN101552229B (zh) * | 2008-03-31 | 2012-04-11 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20040097032A1 (en) | 2004-05-20 |
JP2004153060A (ja) | 2004-05-27 |
CN1316568C (zh) | 2007-05-16 |
TW200414321A (en) | 2004-08-01 |
US6936520B2 (en) | 2005-08-30 |
TWI229374B (en) | 2005-03-11 |
JP4108444B2 (ja) | 2008-06-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081024 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081024 Address after: Tokyo, Japan, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Patentee before: Fujitsu Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTORS CO., LTD Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070516 Termination date: 20191027 |
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CF01 | Termination of patent right due to non-payment of annual fee |