CN1264225C - 具有含氮栅绝缘膜的半导体器件及其制造方法 - Google Patents

具有含氮栅绝缘膜的半导体器件及其制造方法 Download PDF

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Publication number
CN1264225C
CN1264225C CN00122716.5A CN00122716A CN1264225C CN 1264225 C CN1264225 C CN 1264225C CN 00122716 A CN00122716 A CN 00122716A CN 1264225 C CN1264225 C CN 1264225C
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CN
China
Prior art keywords
gate electrode
insulating film
semiconductor substrate
gate insulating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN00122716.5A
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English (en)
Chinese (zh)
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CN1284748A (zh
Inventor
大内和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1284748A publication Critical patent/CN1284748A/zh
Application granted granted Critical
Publication of CN1264225C publication Critical patent/CN1264225C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10D64/01344—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN00122716.5A 1999-07-01 2000-06-30 具有含氮栅绝缘膜的半导体器件及其制造方法 Expired - Fee Related CN1264225C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP187970/1999 1999-07-01
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1284748A CN1284748A (zh) 2001-02-21
CN1264225C true CN1264225C (zh) 2006-07-12

Family

ID=16215344

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00122716.5A Expired - Fee Related CN1264225C (zh) 1999-07-01 2000-06-30 具有含氮栅绝缘膜的半导体器件及其制造方法

Country Status (4)

Country Link
US (2) US6498374B1 (enExample)
JP (1) JP2001015748A (enExample)
CN (1) CN1264225C (enExample)
TW (1) TW535191B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291861A (ja) * 2000-04-05 2001-10-19 Nec Corp Ｍｏｓトランジスタ、トランジスタ製造方法
JP2002026139A (ja) 2000-06-30 2002-01-25 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2002270833A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6921743B2 (en) * 2001-04-02 2005-07-26 The Procter & Gamble Company Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices
KR100464535B1 (ko) * 2002-05-20 2005-01-03 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
JP2005064317A (ja) * 2003-08-18 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置
US7005333B2 (en) * 2003-12-30 2006-02-28 Infineon Technologies Ag Transistor with silicon and carbon layer in the channel region
US7002224B2 (en) * 2004-02-03 2006-02-21 Infineon Technologies Ag Transistor with doped gate dielectric
US7094671B2 (en) * 2004-03-22 2006-08-22 Infineon Technologies Ag Transistor with shallow germanium implantation region in channel
JP2006253311A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体装置及びその製造方法
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
JPH09312393A (ja) * 1996-05-22 1997-12-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3312102B2 (ja) 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3754234B2 (ja) * 1998-04-28 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート構造側壁の酸化膜の形成方法

Also Published As

Publication number Publication date
CN1284748A (zh) 2001-02-21
TW535191B (en) 2003-06-01
JP2001015748A (ja) 2001-01-19
US20030119235A1 (en) 2003-06-26
US6498374B1 (en) 2002-12-24

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Granted publication date: 20060712

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