JP2001015748A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001015748A
JP2001015748A JP11187970A JP18797099A JP2001015748A JP 2001015748 A JP2001015748 A JP 2001015748A JP 11187970 A JP11187970 A JP 11187970A JP 18797099 A JP18797099 A JP 18797099A JP 2001015748 A JP2001015748 A JP 2001015748A
Authority
JP
Japan
Prior art keywords
gate electrode
film
insulating film
semiconductor substrate
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11187970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015748A5 (enExample
Inventor
Kazuya Ouchi
和也 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11187970A priority Critical patent/JP2001015748A/ja
Priority to TW089112854A priority patent/TW535191B/zh
Priority to CN00122716.5A priority patent/CN1264225C/zh
Priority to US09/609,314 priority patent/US6498374B1/en
Publication of JP2001015748A publication Critical patent/JP2001015748A/ja
Priority to US10/307,405 priority patent/US20030119235A1/en
Publication of JP2001015748A5 publication Critical patent/JP2001015748A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10D64/01344—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP11187970A 1999-07-01 1999-07-01 半導体装置及びその製造方法 Pending JP2001015748A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法
TW089112854A TW535191B (en) 1999-07-01 2000-06-29 MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same
CN00122716.5A CN1264225C (zh) 1999-07-01 2000-06-30 具有含氮栅绝缘膜的半导体器件及其制造方法
US09/609,314 US6498374B1 (en) 1999-07-01 2000-06-30 MOS semiconductor device having gate insulating film containing nitrogen
US10/307,405 US20030119235A1 (en) 1999-07-01 2002-12-02 MOS semiconductor device having gate insulating film containing nitrogen and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005229875A Division JP2006019760A (ja) 2005-08-08 2005-08-08 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001015748A true JP2001015748A (ja) 2001-01-19
JP2001015748A5 JP2001015748A5 (enExample) 2004-12-16

Family

ID=16215344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11187970A Pending JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6498374B1 (enExample)
JP (1) JP2001015748A (enExample)
CN (1) CN1264225C (enExample)
TW (1) TW535191B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673705B2 (en) 2000-06-30 2004-01-06 Kabushiki Kaisha Toshiba Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness
KR100444918B1 (ko) * 2001-03-14 2004-08-18 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
KR100464535B1 (ko) * 2002-05-20 2005-01-03 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291861A (ja) * 2000-04-05 2001-10-19 Nec Corp Ｍｏｓトランジスタ、トランジスタ製造方法
US6921743B2 (en) * 2001-04-02 2005-07-26 The Procter & Gamble Company Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
JP2005064317A (ja) * 2003-08-18 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置
US7005333B2 (en) * 2003-12-30 2006-02-28 Infineon Technologies Ag Transistor with silicon and carbon layer in the channel region
US7002224B2 (en) * 2004-02-03 2006-02-21 Infineon Technologies Ag Transistor with doped gate dielectric
US7094671B2 (en) * 2004-03-22 2006-08-22 Infineon Technologies Ag Transistor with shallow germanium implantation region in channel
JP2006253311A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体装置及びその製造方法
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
JPH09312393A (ja) * 1996-05-22 1997-12-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3312102B2 (ja) 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3754234B2 (ja) * 1998-04-28 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート構造側壁の酸化膜の形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673705B2 (en) 2000-06-30 2004-01-06 Kabushiki Kaisha Toshiba Method of manufacturing a MISFET having post oxide films having at least two kinds of thickness
KR100444918B1 (ko) * 2001-03-14 2004-08-18 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
KR100464535B1 (ko) * 2002-05-20 2005-01-03 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법

Also Published As

Publication number Publication date
CN1284748A (zh) 2001-02-21
TW535191B (en) 2003-06-01
US20030119235A1 (en) 2003-06-26
CN1264225C (zh) 2006-07-12
US6498374B1 (en) 2002-12-24

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