JP2001015748A5 - - Google Patents

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Publication number
JP2001015748A5
JP2001015748A5 JP1999187970A JP18797099A JP2001015748A5 JP 2001015748 A5 JP2001015748 A5 JP 2001015748A5 JP 1999187970 A JP1999187970 A JP 1999187970A JP 18797099 A JP18797099 A JP 18797099A JP 2001015748 A5 JP2001015748 A5 JP 2001015748A5
Authority
JP
Japan
Prior art keywords
insulating film
gate insulating
gate electrode
semiconductor substrate
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999187970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015748A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11187970A priority Critical patent/JP2001015748A/ja
Priority claimed from JP11187970A external-priority patent/JP2001015748A/ja
Priority to TW089112854A priority patent/TW535191B/zh
Priority to CN00122716.5A priority patent/CN1264225C/zh
Priority to US09/609,314 priority patent/US6498374B1/en
Publication of JP2001015748A publication Critical patent/JP2001015748A/ja
Priority to US10/307,405 priority patent/US20030119235A1/en
Publication of JP2001015748A5 publication Critical patent/JP2001015748A5/ja
Pending legal-status Critical Current

Links

JP11187970A 1999-07-01 1999-07-01 半導体装置及びその製造方法 Pending JP2001015748A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法
TW089112854A TW535191B (en) 1999-07-01 2000-06-29 MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same
CN00122716.5A CN1264225C (zh) 1999-07-01 2000-06-30 具有含氮栅绝缘膜的半导体器件及其制造方法
US09/609,314 US6498374B1 (en) 1999-07-01 2000-06-30 MOS semiconductor device having gate insulating film containing nitrogen
US10/307,405 US20030119235A1 (en) 1999-07-01 2002-12-02 MOS semiconductor device having gate insulating film containing nitrogen and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005229875A Division JP2006019760A (ja) 2005-08-08 2005-08-08 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001015748A JP2001015748A (ja) 2001-01-19
JP2001015748A5 true JP2001015748A5 (enExample) 2004-12-16

Family

ID=16215344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11187970A Pending JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6498374B1 (enExample)
JP (1) JP2001015748A (enExample)
CN (1) CN1264225C (enExample)
TW (1) TW535191B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291861A (ja) * 2000-04-05 2001-10-19 Nec Corp Ｍｏｓトランジスタ、トランジスタ製造方法
JP2002026139A (ja) 2000-06-30 2002-01-25 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2002270833A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6921743B2 (en) * 2001-04-02 2005-07-26 The Procter & Gamble Company Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices
KR100464535B1 (ko) * 2002-05-20 2005-01-03 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
JP2005064317A (ja) * 2003-08-18 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置
US7005333B2 (en) * 2003-12-30 2006-02-28 Infineon Technologies Ag Transistor with silicon and carbon layer in the channel region
US7002224B2 (en) * 2004-02-03 2006-02-21 Infineon Technologies Ag Transistor with doped gate dielectric
US7094671B2 (en) * 2004-03-22 2006-08-22 Infineon Technologies Ag Transistor with shallow germanium implantation region in channel
JP2006253311A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体装置及びその製造方法
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
JPH09312393A (ja) * 1996-05-22 1997-12-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3312102B2 (ja) 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3754234B2 (ja) * 1998-04-28 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート構造側壁の酸化膜の形成方法

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