TW535191B - MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same - Google Patents

MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same Download PDF

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Publication number
TW535191B
TW535191B TW089112854A TW89112854A TW535191B TW 535191 B TW535191 B TW 535191B TW 089112854 A TW089112854 A TW 089112854A TW 89112854 A TW89112854 A TW 89112854A TW 535191 B TW535191 B TW 535191B
Authority
TW
Taiwan
Prior art keywords
gate
film
insulating film
semiconductor substrate
gate insulating
Prior art date
Application number
TW089112854A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuya Ohuchi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW535191B publication Critical patent/TW535191B/zh

Links

Classifications

    • H10D64/01344—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H10D64/0134—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW089112854A 1999-07-01 2000-06-29 MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same TW535191B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11187970A JP2001015748A (ja) 1999-07-01 1999-07-01 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW535191B true TW535191B (en) 2003-06-01

Family

ID=16215344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089112854A TW535191B (en) 1999-07-01 2000-06-29 MOS semiconductor device having gate insulating film containing nitrogen and manufacturing method of the same

Country Status (4)

Country Link
US (2) US6498374B1 (enExample)
JP (1) JP2001015748A (enExample)
CN (1) CN1264225C (enExample)
TW (1) TW535191B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291861A (ja) * 2000-04-05 2001-10-19 Nec Corp Ｍｏｓトランジスタ、トランジスタ製造方法
JP2002026139A (ja) 2000-06-30 2002-01-25 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2002270833A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6921743B2 (en) * 2001-04-02 2005-07-26 The Procter & Gamble Company Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices
KR100464535B1 (ko) * 2002-05-20 2005-01-03 주식회사 하이닉스반도체 반도체소자의 트랜지스터 형성 방법
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
JP2005064317A (ja) * 2003-08-18 2005-03-10 Semiconductor Leading Edge Technologies Inc 半導体装置
US7005333B2 (en) * 2003-12-30 2006-02-28 Infineon Technologies Ag Transistor with silicon and carbon layer in the channel region
US7002224B2 (en) * 2004-02-03 2006-02-21 Infineon Technologies Ag Transistor with doped gate dielectric
US7094671B2 (en) * 2004-03-22 2006-08-22 Infineon Technologies Ag Transistor with shallow germanium implantation region in channel
JP2006253311A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体装置及びその製造方法
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
JPH09312393A (ja) * 1996-05-22 1997-12-02 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3312102B2 (ja) 1996-11-27 2002-08-05 シャープ株式会社 不揮発性半導体記憶装置の製造方法
JP3754234B2 (ja) * 1998-04-28 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ゲート構造側壁の酸化膜の形成方法

Also Published As

Publication number Publication date
CN1284748A (zh) 2001-02-21
JP2001015748A (ja) 2001-01-19
US20030119235A1 (en) 2003-06-26
CN1264225C (zh) 2006-07-12
US6498374B1 (en) 2002-12-24

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MM4A Annulment or lapse of patent due to non-payment of fees