CN1254929A - 磁性存储器 - Google Patents
磁性存储器 Download PDFInfo
- Publication number
- CN1254929A CN1254929A CN99124477A CN99124477A CN1254929A CN 1254929 A CN1254929 A CN 1254929A CN 99124477 A CN99124477 A CN 99124477A CN 99124477 A CN99124477 A CN 99124477A CN 1254929 A CN1254929 A CN 1254929A
- Authority
- CN
- China
- Prior art keywords
- memory cell
- magnetic
- read
- signal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 30
- 230000005415 magnetization Effects 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 239000000696 magnetic material Substances 0.000 claims description 9
- 230000001413 cellular effect Effects 0.000 claims description 6
- 238000005036 potential barrier Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 abstract 2
- 230000008569 process Effects 0.000 description 15
- 238000005259 measurement Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000002847 impedance measurement Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
存储器单元1A数据内容 | 参考单元1R数据内容 | 测量信号Vm(开始) | 测量信号Vm(结束) |
0 | 0 | 0 | +1 |
1 | 0 | +1 | +1 |
0 | 1 | -1 | 0 |
1 | 1 | 0 | 0 |
存储器单元1A数据内容 | 参考单元1R数据内容 | 测量信号Vm(开始) | 测量信号Vm(结束) | 信号变化ΔVm(ΔVs) |
0 | 0 | 0 | +1 | +1 |
1 | 0 | +1 | +1 | 0 |
0 | 1 | -1 | 0 | +1 |
1 | 1 | 0 | 0 | 0 |
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853447A DE19853447A1 (de) | 1998-11-19 | 1998-11-19 | Magnetischer Speicher |
DE19853447.7 | 1998-11-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1254929A true CN1254929A (zh) | 2000-05-31 |
CN1252726C CN1252726C (zh) | 2006-04-19 |
Family
ID=7888379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB99124477XA Expired - Fee Related CN1252726C (zh) | 1998-11-19 | 1999-11-19 | 磁性存储器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6359829B1 (zh) |
EP (1) | EP1003176B1 (zh) |
JP (1) | JP3801823B2 (zh) |
KR (1) | KR100349988B1 (zh) |
CN (1) | CN1252726C (zh) |
DE (2) | DE19853447A1 (zh) |
TW (1) | TW498335B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311472C (zh) * | 2000-12-05 | 2007-04-18 | 因芬尼昂技术股份公司 | 磁阻性存储器及其读取方法 |
CN1322512C (zh) * | 2000-12-11 | 2007-06-20 | 因芬尼昂技术股份公司 | 存储设备及其操作方法 |
CN100334714C (zh) * | 2001-04-27 | 2007-08-29 | 微米技术有限公司 | 形成最小间隔磁随机存取存储器结构的改进方法 |
CN100338683C (zh) * | 2001-01-24 | 2007-09-19 | 因芬尼昂技术北美公司 | 存储器装置 |
CN100390899C (zh) * | 2002-01-18 | 2008-05-28 | 飞思卡尔半导体公司 | 无隔离器件的mram |
CN100403447C (zh) * | 2001-01-04 | 2008-07-16 | 自由度半导体公司 | 磁阻随机存取存储器写入装置及方法 |
CN100407332C (zh) * | 2001-01-19 | 2008-07-30 | 因芬尼昂技术股份公司 | 半导体存储装置的选择装置 |
CN100470665C (zh) * | 2002-06-28 | 2009-03-18 | 飞思卡尔半导体公司 | 写入切换存储器的方法 |
CN1790543B (zh) * | 2004-12-17 | 2010-05-05 | 电子科技大学 | 一种磁性随机存储器参考信号的产生方法 |
CN1385860B (zh) * | 2001-05-16 | 2010-05-12 | 三菱电机株式会社 | 具有磁性隧道接合部的薄膜磁体存储装置 |
CN1725370B (zh) * | 2004-06-30 | 2011-04-13 | 国际商业机器公司 | 降低功耗的mram器件各向异性轴角选择方法和结构 |
CN105006244A (zh) * | 2015-05-13 | 2015-10-28 | 湖北中部慧易数据科技有限公司 | 一种信号放大器、磁存储器的读取电路及其操作方法 |
CN111383691A (zh) * | 2018-12-28 | 2020-07-07 | 上海磁宇信息科技有限公司 | 一种具有写状态检测单元的mram存储器件 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3589346B2 (ja) * | 1999-06-17 | 2004-11-17 | 松下電器産業株式会社 | 磁気抵抗効果素子および磁気抵抗効果記憶素子 |
US6169689B1 (en) * | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
KR100348863B1 (ko) * | 1999-12-30 | 2002-08-17 | 주식회사 하이닉스반도체 | 리던던시 평가회로를 구비한 메모리소자 및 리던던시평가방법 |
US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
JP3682208B2 (ja) * | 2000-06-30 | 2005-08-10 | 株式会社東芝 | スピンバルブトランジスター |
DE10032271C2 (de) | 2000-07-03 | 2002-08-01 | Infineon Technologies Ag | MRAM-Anordnung |
DE10032273C2 (de) * | 2000-07-03 | 2002-07-18 | Infineon Technologies Ag | Verfahren und Anordnung zur Kompensation von parasitären Stromverlusten |
DE10043218C2 (de) * | 2000-09-01 | 2003-04-24 | Infineon Technologies Ag | Schaltungsanordnung und Verfahren zur Alterungsbeschleunigung bei einem MRAM |
US6563743B2 (en) * | 2000-11-27 | 2003-05-13 | Hitachi, Ltd. | Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy |
US6466498B2 (en) * | 2001-01-10 | 2002-10-15 | Hewlett-Packard Company | Discontinuity-based memory cell sensing |
US6567297B2 (en) * | 2001-02-01 | 2003-05-20 | Micron Technology, Inc. | Method and apparatus for sensing resistance values of memory cells |
JP2002269968A (ja) * | 2001-03-13 | 2002-09-20 | Canon Inc | 強磁性体メモリの情報再生方法 |
DE10118196C2 (de) | 2001-04-11 | 2003-02-27 | Infineon Technologies Ag | Verfahren zum Betrieb einer MRAM-Halbleiterspeicheranordnung |
JP5355666B2 (ja) * | 2001-04-26 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6515896B1 (en) * | 2001-07-24 | 2003-02-04 | Hewlett-Packard Company | Memory device with short read time |
DE10149737A1 (de) | 2001-10-09 | 2003-04-24 | Infineon Technologies Ag | Halbleiterspeicher mit sich kreuzenden Wort- und Bitleitungen, an denen magnetoresistive Speicherzellen angeordnet sind |
JP3906067B2 (ja) | 2001-11-30 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4046513B2 (ja) * | 2002-01-30 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体集積回路 |
JP3875568B2 (ja) | 2002-02-05 | 2007-01-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2003242771A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 半導体記憶装置 |
JP3884312B2 (ja) | 2002-03-28 | 2007-02-21 | 株式会社東芝 | 磁気記憶装置 |
US7209378B2 (en) * | 2002-08-08 | 2007-04-24 | Micron Technology, Inc. | Columnar 1T-N memory cell structure |
JP2004086934A (ja) | 2002-08-22 | 2004-03-18 | Renesas Technology Corp | 不揮発性記憶装置 |
JP2004103104A (ja) | 2002-09-09 | 2004-04-02 | Renesas Technology Corp | 薄膜磁性体記憶装置 |
DE10255857B3 (de) * | 2002-11-29 | 2004-07-15 | Forschungsverbund Berlin E.V. | Magnetische Logikeinrichtung |
KR100506932B1 (ko) * | 2002-12-10 | 2005-08-09 | 삼성전자주식회사 | 기준 셀들을 갖는 자기 램 소자 및 그 구조체 |
DE10311717B4 (de) * | 2003-03-17 | 2007-09-13 | Forschungsverbund Berlin E.V. | Magnetische Logikeinrichtung, Logikschaltung, Verfahren zu deren Betrieb und deren Verwendung |
US7244997B2 (en) * | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
DE602005009411D1 (de) * | 2004-01-29 | 2008-10-16 | Sharp Kk | Halbleiterspeichervorrichtung |
KR100827448B1 (ko) * | 2007-02-16 | 2008-05-07 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
JP5221222B2 (ja) * | 2008-06-25 | 2013-06-26 | 株式会社東芝 | 半導体記憶装置 |
JP2010134994A (ja) * | 2008-12-04 | 2010-06-17 | Elpida Memory Inc | 半導体装置及びそのカリブレーション方法 |
US9685954B2 (en) * | 2014-03-09 | 2017-06-20 | Technion Research & Development Foundation Ltd. | Pure memristive logic gate |
US9472257B2 (en) * | 2014-05-15 | 2016-10-18 | Qualcomm Incorporated | Hybrid magnetoresistive read only memory (MRAM) cache mixing single-ended and differential sensing |
WO2016018503A1 (en) * | 2014-07-30 | 2016-02-04 | University Of South Florida | Magnetic memory physically unclonable functions |
KR102632050B1 (ko) | 2022-12-27 | 2024-02-02 | 주식회사 케이엠티 | 주차정보 및 편의성 위한 스마트시티형 스마트 카 스토퍼 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US3982233A (en) | 1974-02-19 | 1976-09-21 | Ampex Corporation | Core memory with improved sense-inhibit recovery time |
US5012444A (en) * | 1990-04-04 | 1991-04-30 | Honeywell Inc. | Opposed field magnetoresistive memory sensing |
US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5477482A (en) * | 1993-10-01 | 1995-12-19 | The United States Of America As Represented By The Secretary Of The Navy | Ultra high density, non-volatile ferromagnetic random access memory |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5699293A (en) * | 1996-10-09 | 1997-12-16 | Motorola | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device |
TW411471B (en) * | 1997-09-17 | 2000-11-11 | Siemens Ag | Memory-cell device |
US5936882A (en) * | 1998-03-31 | 1999-08-10 | Motorola, Inc. | Magnetoresistive random access memory device and method of manufacture |
US6055179A (en) * | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
US6111781A (en) * | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
US6055178A (en) * | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
US6191972B1 (en) * | 1999-04-30 | 2001-02-20 | Nec Corporation | Magnetic random access memory circuit |
-
1998
- 1998-11-19 DE DE19853447A patent/DE19853447A1/de not_active Withdrawn
-
1999
- 1999-11-02 TW TW088119060A patent/TW498335B/zh not_active IP Right Cessation
- 1999-11-18 DE DE59912387T patent/DE59912387D1/de not_active Expired - Lifetime
- 1999-11-18 EP EP99122084A patent/EP1003176B1/de not_active Expired - Lifetime
- 1999-11-18 JP JP32774099A patent/JP3801823B2/ja not_active Expired - Fee Related
- 1999-11-19 US US09/443,751 patent/US6359829B1/en not_active Expired - Lifetime
- 1999-11-19 CN CNB99124477XA patent/CN1252726C/zh not_active Expired - Fee Related
- 1999-11-19 KR KR1019990051492A patent/KR100349988B1/ko not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1311472C (zh) * | 2000-12-05 | 2007-04-18 | 因芬尼昂技术股份公司 | 磁阻性存储器及其读取方法 |
CN1322512C (zh) * | 2000-12-11 | 2007-06-20 | 因芬尼昂技术股份公司 | 存储设备及其操作方法 |
CN100403447C (zh) * | 2001-01-04 | 2008-07-16 | 自由度半导体公司 | 磁阻随机存取存储器写入装置及方法 |
CN100407332C (zh) * | 2001-01-19 | 2008-07-30 | 因芬尼昂技术股份公司 | 半导体存储装置的选择装置 |
CN100338683C (zh) * | 2001-01-24 | 2007-09-19 | 因芬尼昂技术北美公司 | 存储器装置 |
CN100334714C (zh) * | 2001-04-27 | 2007-08-29 | 微米技术有限公司 | 形成最小间隔磁随机存取存储器结构的改进方法 |
CN1385860B (zh) * | 2001-05-16 | 2010-05-12 | 三菱电机株式会社 | 具有磁性隧道接合部的薄膜磁体存储装置 |
CN100390899C (zh) * | 2002-01-18 | 2008-05-28 | 飞思卡尔半导体公司 | 无隔离器件的mram |
CN100470665C (zh) * | 2002-06-28 | 2009-03-18 | 飞思卡尔半导体公司 | 写入切换存储器的方法 |
CN1725370B (zh) * | 2004-06-30 | 2011-04-13 | 国际商业机器公司 | 降低功耗的mram器件各向异性轴角选择方法和结构 |
CN1790543B (zh) * | 2004-12-17 | 2010-05-05 | 电子科技大学 | 一种磁性随机存储器参考信号的产生方法 |
CN105006244A (zh) * | 2015-05-13 | 2015-10-28 | 湖北中部慧易数据科技有限公司 | 一种信号放大器、磁存储器的读取电路及其操作方法 |
CN105006244B (zh) * | 2015-05-13 | 2017-10-10 | 湖北中部慧易数据科技有限公司 | 一种信号放大器、磁存储器的读取电路及其操作方法 |
CN111383691A (zh) * | 2018-12-28 | 2020-07-07 | 上海磁宇信息科技有限公司 | 一种具有写状态检测单元的mram存储器件 |
Also Published As
Publication number | Publication date |
---|---|
KR20000035578A (ko) | 2000-06-26 |
US6359829B1 (en) | 2002-03-19 |
TW498335B (en) | 2002-08-11 |
DE59912387D1 (de) | 2005-09-15 |
JP2000163950A (ja) | 2000-06-16 |
JP3801823B2 (ja) | 2006-07-26 |
EP1003176A2 (de) | 2000-05-24 |
DE19853447A1 (de) | 2000-05-25 |
EP1003176A3 (de) | 2001-01-03 |
CN1252726C (zh) | 2006-04-19 |
KR100349988B1 (ko) | 2002-08-22 |
EP1003176B1 (de) | 2005-08-10 |
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