CN1222016C - 通过激光退火和快速加温退火形成超浅结的方法 - Google Patents

通过激光退火和快速加温退火形成超浅结的方法 Download PDF

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Publication number
CN1222016C
CN1222016C CNB018062164A CN01806216A CN1222016C CN 1222016 C CN1222016 C CN 1222016C CN B018062164 A CNB018062164 A CN B018062164A CN 01806216 A CN01806216 A CN 01806216A CN 1222016 C CN1222016 C CN 1222016C
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CN
China
Prior art keywords
wafer
laser
laser energy
pulse
annealing
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Expired - Fee Related
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CNB018062164A
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English (en)
Chinese (zh)
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CN1419708A (zh
Inventor
苏珊·B·费尔奇
索米特·塔尔沃
丹尼尔·F·当尼
卡罗尔·M·格拉扎斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Sitaipo Technology Co
Varian Semiconductor Equipment Associates Inc
Original Assignee
Super Sitaipo Technology Co
Varian Semiconductor Equipment Associates Inc
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Publication of CN1419708A publication Critical patent/CN1419708A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNB018062164A 2000-03-17 2001-03-15 通过激光退火和快速加温退火形成超浅结的方法 Expired - Fee Related CN1222016C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19023300P 2000-03-17 2000-03-17
US60/190,233 2000-03-17
US63841000A 2000-08-11 2000-08-11
US09/638,410 2000-08-11

Publications (2)

Publication Number Publication Date
CN1419708A CN1419708A (zh) 2003-05-21
CN1222016C true CN1222016C (zh) 2005-10-05

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Family Applications (1)

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CNB018062164A Expired - Fee Related CN1222016C (zh) 2000-03-17 2001-03-15 通过激光退火和快速加温退火形成超浅结的方法

Country Status (6)

Country Link
EP (1) EP1264335A1 (fr)
JP (1) JP4942128B2 (fr)
KR (1) KR100839259B1 (fr)
CN (1) CN1222016C (fr)
TW (1) TWI271791B (fr)
WO (1) WO2001071787A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN106856159A (zh) * 2015-12-08 2017-06-16 英飞凌科技股份有限公司 用于离子注入的装置和方法

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US7026229B2 (en) 2001-11-28 2006-04-11 Vartan Semiconductor Equipment Associates, Inc. Athermal annealing with rapid thermal annealing system and method
US20030186519A1 (en) * 2002-04-01 2003-10-02 Downey Daniel F. Dopant diffusion and activation control with athermal annealing
US6878415B2 (en) * 2002-04-15 2005-04-12 Varian Semiconductor Equipment Associates, Inc. Methods for chemical formation of thin film layers using short-time thermal processes
US7135423B2 (en) 2002-05-09 2006-11-14 Varian Semiconductor Equipment Associates, Inc Methods for forming low resistivity, ultrashallow junctions with low damage
KR100739837B1 (ko) 2003-02-19 2007-07-13 마쯔시다덴기산교 가부시키가이샤 불순물 도입 방법 및 불순물 도입 장치
US20040235281A1 (en) * 2003-04-25 2004-11-25 Downey Daniel F. Apparatus and methods for junction formation using optical illumination
CN100437912C (zh) 2003-08-25 2008-11-26 松下电器产业株式会社 杂质导入层的形成方法和器件的制造方法
US7981779B2 (en) 2003-10-09 2011-07-19 Panasonic Corporation Method for making junction and processed material formed using the same
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
JP2005142344A (ja) 2003-11-06 2005-06-02 Toshiba Corp 半導体装置の製造方法および半導体製造装置
US7078302B2 (en) * 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
WO2005112088A1 (fr) 2004-05-14 2005-11-24 Matsushita Electric Industrial Co., Ltd. Procédé de fabrication et appareil de fabrication de dispositif semi-conducteur
CN1954409B (zh) * 2004-05-18 2010-10-13 库克有限公司 注入计数掺杂质离子
JP4614747B2 (ja) * 2004-11-30 2011-01-19 住友重機械工業株式会社 半導体装置の製造方法
JP2006245338A (ja) * 2005-03-03 2006-09-14 Nec Electronics Corp 電界効果型トランジスタの製造方法
JP5283827B2 (ja) * 2006-03-30 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
DE102006053182B4 (de) * 2006-11-09 2015-01-15 Infineon Technologies Ag Verfahren zur p-Dotierung von Silizium
JP2008251839A (ja) * 2007-03-30 2008-10-16 Ihi Corp レーザアニール方法及びレーザアニール装置
JP5178046B2 (ja) * 2007-05-01 2013-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20100015788A1 (en) * 2007-09-10 2010-01-21 Yuichiro Sasaki Method for manufacturing semiconductor device
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
EP2240955B1 (fr) * 2008-01-31 2013-08-14 President and Fellows of Harvard College Fabrication de surfaces plates sur des matériaux dopés par rayonnement laser pulsé
JP5346484B2 (ja) 2008-04-16 2013-11-20 大日本スクリーン製造株式会社 熱処理方法および熱処理装置
JP2009302373A (ja) * 2008-06-16 2009-12-24 Nec Electronics Corp 半導体装置の製造方法
JP2010212530A (ja) * 2009-03-12 2010-09-24 Fuji Electric Systems Co Ltd 半導体素子の製造方法
JP5556431B2 (ja) * 2010-06-24 2014-07-23 富士電機株式会社 半導体装置の製造方法
TW201310551A (zh) * 2011-07-29 2013-03-01 Applied Materials Inc 熱處理基材的方法
JP5661009B2 (ja) * 2011-09-08 2015-01-28 住友重機械工業株式会社 半導体装置の製造方法
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
SG195515A1 (en) 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
CN103835000A (zh) * 2012-11-20 2014-06-04 上海华虹宏力半导体制造有限公司 一种高温改善多晶硅表面粗糙度的方法
JP5718975B2 (ja) * 2013-05-23 2015-05-13 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
US20150111341A1 (en) * 2013-10-23 2015-04-23 Qualcomm Incorporated LASER ANNEALING METHODS FOR INTEGRATED CIRCUITS (ICs)
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
JP6587818B2 (ja) * 2015-03-26 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
US9859121B2 (en) * 2015-06-29 2018-01-02 International Business Machines Corporation Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
CN111599670A (zh) * 2019-02-20 2020-08-28 创能动力科技有限公司 晶片加工方法及半导体装置
CN110752159B (zh) * 2019-10-28 2023-08-29 中国科学技术大学 对氧化镓材料退火的方法

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JP3190653B2 (ja) * 1989-05-09 2001-07-23 ソニー株式会社 アニール方法およびアニール装置
JP2821628B2 (ja) * 1989-11-10 1998-11-05 ソニー株式会社 半導体装置の製造方法
JP3185386B2 (ja) * 1992-07-31 2001-07-09 ソニー株式会社 半導体装置の製造方法
JP3211394B2 (ja) * 1992-08-13 2001-09-25 ソニー株式会社 半導体装置の製造方法
KR100231607B1 (ko) * 1996-12-31 1999-11-15 김영환 반도체 소자의 초저접합 형성방법
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US6087247A (en) * 1998-01-29 2000-07-11 Varian Semiconductor Equipment Associates, Inc. Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106856159A (zh) * 2015-12-08 2017-06-16 英飞凌科技股份有限公司 用于离子注入的装置和方法
US10622268B2 (en) 2015-12-08 2020-04-14 Infineon Technologies Ag Apparatus and method for ion implantation

Also Published As

Publication number Publication date
JP2003528462A (ja) 2003-09-24
CN1419708A (zh) 2003-05-21
WO2001071787A1 (fr) 2001-09-27
KR20030066318A (ko) 2003-08-09
EP1264335A1 (fr) 2002-12-11
KR100839259B1 (ko) 2008-06-17
TWI271791B (en) 2007-01-21
JP4942128B2 (ja) 2012-05-30

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Correct: Carol a. M

False: Carol M Gelazhasi

Number: 40

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False: Carol M Gelazhasi

Number: 40

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Volume: 21

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