JP5718975B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP5718975B2 JP5718975B2 JP2013109017A JP2013109017A JP5718975B2 JP 5718975 B2 JP5718975 B2 JP 5718975B2 JP 2013109017 A JP2013109017 A JP 2013109017A JP 2013109017 A JP2013109017 A JP 2013109017A JP 5718975 B2 JP5718975 B2 JP 5718975B2
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- temperature
- semiconductor wafer
- substrate
- light irradiation
- heat treatment
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- 238000010438 heat treatment Methods 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 20
- 230000004913 activation Effects 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 description 94
- 239000007789 gas Substances 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 15
- 238000001994 activation Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 11
- 238000011084 recovery Methods 0.000 description 11
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 229910052724 xenon Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 230000003685 thermal hair damage Effects 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Recrystallisation Techniques (AREA)
Description
3 制御部
4 保持部昇降機構
5 ランプハウス
6 チャンバー
7 保持部
31 パルス発生器
32 波形設定部
33 入力部
60 上部開口
61 チャンバー窓
65 熱処理空間
71 ホットプレート
72 サセプタ
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 スイッチング素子
97 トリガー回路
FL フラッシュランプ
W 半導体ウェハー
Claims (5)
- 不純物が注入された半導体層を有する基板に対して光を照射することによって該基板を加熱する熱処理方法であって、
ピークが第1の発光出力となる出力波形にて基板に光照射を行って前記基板の表面温度を不純物の活性化が生じる所定の処理温度に昇温する昇温工程と、
前記ピークを過ぎた後に前記第1の発光出力よりも小さな発光出力にて基板に追加の光照射を行って前記基板の表面温度を前記昇温工程にて到達した前記所定の処理温度に5ミリセカンド以上維持する温度維持工程と、
を備え、
前記昇温工程での光照射時間と前記温度維持工程での光照射時間との合計が1秒以下であることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記ピークを過ぎた後に前記昇温工程での発光出力が前記第1の発光出力の3分の2以下となったときに前記温度維持工程による追加の光照射を開始することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記昇温工程での光照射時間は0.1ミリセカンド以上10ミリセカンド以下であることを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記温度維持工程での光照射時間は5ミリセカンド以上であることを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記昇温工程にて前記基板の表面温度を前記所定の処理温度に昇温することによって前記基板に注入された不純物が活性化され、
前記温度維持工程にて前記基板の表面温度を前記所定の処理温度に5ミリセカンド以上維持することによって前記基板に導入された欠陥の回復を行うことを特徴とする熱処理方法。
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JP2008106894A Division JP5346484B2 (ja) | 2008-04-16 | 2008-04-16 | 熱処理方法および熱処理装置 |
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JP2014242949A Division JP5998191B2 (ja) | 2014-12-01 | 2014-12-01 | 熱処理方法 |
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JP2013201448A JP2013201448A (ja) | 2013-10-03 |
JP5718975B2 true JP5718975B2 (ja) | 2015-05-13 |
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JP2013109017A Active JP5718975B2 (ja) | 2013-05-23 | 2013-05-23 | 熱処理方法 |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1222016C (zh) * | 2000-03-17 | 2005-10-05 | 瓦里安半导体设备联合公司 | 通过激光退火和快速加温退火形成超浅结的方法 |
US6376806B2 (en) * | 2000-05-09 | 2002-04-23 | Woo Sik Yoo | Flash anneal |
JP4092541B2 (ja) * | 2000-12-08 | 2008-05-28 | ソニー株式会社 | 半導体薄膜の形成方法及び半導体装置の製造方法 |
JP2005142344A (ja) * | 2003-11-06 | 2005-06-02 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
JP2006073728A (ja) * | 2004-09-01 | 2006-03-16 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4816634B2 (ja) * | 2007-12-28 | 2011-11-16 | ウシオ電機株式会社 | 基板加熱装置及び基板加熱方法 |
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- 2013-05-23 JP JP2013109017A patent/JP5718975B2/ja active Active
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