CN1210341A - 带有对用于选择存储单元的辅助字线的控制的半导体存储器件 - Google Patents
带有对用于选择存储单元的辅助字线的控制的半导体存储器件 Download PDFInfo
- Publication number
- CN1210341A CN1210341A CN98120349A CN98120349A CN1210341A CN 1210341 A CN1210341 A CN 1210341A CN 98120349 A CN98120349 A CN 98120349A CN 98120349 A CN98120349 A CN 98120349A CN 1210341 A CN1210341 A CN 1210341A
- Authority
- CN
- China
- Prior art keywords
- word lines
- selection wire
- word line
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- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP238474/97 | 1997-09-03 | ||
JP23847497A JP3478953B2 (ja) | 1997-09-03 | 1997-09-03 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1210341A true CN1210341A (zh) | 1999-03-10 |
CN1267928C CN1267928C (zh) | 2006-08-02 |
Family
ID=17030786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981203493A Expired - Fee Related CN1267928C (zh) | 1997-09-03 | 1998-09-02 | 带有对用于选择存储单元的辅助字线的控制的半导体存储器件 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6002635A (zh) |
JP (1) | JP3478953B2 (zh) |
KR (1) | KR100343359B1 (zh) |
CN (1) | CN1267928C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006313620A (ja) * | 2006-06-22 | 2006-11-16 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の駆動方法 |
CN103123803A (zh) * | 2008-08-21 | 2013-05-29 | 海力士半导体有限公司 | 半导体存储装置 |
CN105378844A (zh) * | 2013-03-21 | 2016-03-02 | 株式会社东芝 | 非易失性随机存取存储器 |
CN113178216A (zh) * | 2021-05-28 | 2021-07-27 | 长鑫存储技术有限公司 | 半导体存储装置 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4198201B2 (ja) | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3250525B2 (ja) * | 1998-08-13 | 2002-01-28 | 日本電気株式会社 | 半導体記憶装置 |
KR100610458B1 (ko) * | 1999-06-29 | 2006-08-09 | 주식회사 하이닉스반도체 | 워드라인 부스팅신호 발생장치 |
KR100339413B1 (ko) * | 1999-08-16 | 2002-05-31 | 박종섭 | 불휘발성 강유전체 메모리 소자의 구동회로 |
KR100368312B1 (ko) * | 1999-12-27 | 2003-01-24 | 주식회사 하이닉스반도체 | 워드라인 디코더 |
KR100313787B1 (ko) * | 1999-12-30 | 2001-11-26 | 박종섭 | 반도체 메모리 장치의 워드라인 구동 회로 |
JP4535563B2 (ja) * | 2000-04-28 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2002298579A (ja) | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
US6646950B2 (en) * | 2001-04-30 | 2003-11-11 | Fujitsu Limited | High speed decoder for flash memory |
KR100567023B1 (ko) * | 2001-12-27 | 2006-04-04 | 매그나칩 반도체 유한회사 | 반도체 메모리의 워드라인 구동 회로 |
GB2419006B (en) * | 2002-04-22 | 2006-06-07 | Micron Technology Inc | Providing a register file memory with local addressing in a SIMD parallel processor |
KR100486257B1 (ko) * | 2002-09-06 | 2005-05-03 | 삼성전자주식회사 | 서브워드라인 구동신호 발생회로 및 방법 |
WO2004077444A1 (ja) | 2003-02-27 | 2004-09-10 | Fujitsu Limited | 半導体記憶装置及びそのリフレッシュ方法 |
JP4849249B2 (ja) * | 2004-12-16 | 2012-01-11 | 日本電気株式会社 | 半導体記憶装置 |
JP4993540B2 (ja) * | 2005-02-16 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
KR100688540B1 (ko) * | 2005-03-24 | 2007-03-02 | 삼성전자주식회사 | 메모리 셀의 집적도를 향상시킨 반도체 메모리 장치 |
KR100604935B1 (ko) * | 2005-03-24 | 2006-07-28 | 삼성전자주식회사 | 코어 면적을 감소시킨 반도체 메모리 장치 |
JP4850661B2 (ja) | 2006-10-31 | 2012-01-11 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
JP5089764B2 (ja) * | 2007-04-06 | 2012-12-05 | ドンブ ハンノン カンパニー リミテッド | 新規な細胞質−遺伝子的雄性不稔(cgms)大根系統植物体を使用した雑種種子生産方法及び前記大根系統植物体選抜用dna標識因子 |
KR100889780B1 (ko) | 2007-04-24 | 2009-03-20 | 삼성전자주식회사 | 패스 전압 윈도우를 향상시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법 |
US20090307891A1 (en) * | 2008-06-17 | 2009-12-17 | Ge-Hitachi Nuclear Energy Americas Llc | Method and apparatus for remotely inspecting and/or treating welds, pipes, vessels and/or other components used in reactor coolant systems or other process applications |
JP4913878B2 (ja) * | 2009-05-27 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | ワード線選択回路、ロウデコーダ |
JP2009259395A (ja) * | 2009-08-06 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
JP2011044220A (ja) * | 2009-08-20 | 2011-03-03 | Hynix Semiconductor Inc | 半導体メモリ装置及びその駆動方法 |
US8547777B2 (en) * | 2010-12-22 | 2013-10-01 | Intel Corporation | Nor logic word line selection |
JP2012190522A (ja) * | 2011-03-14 | 2012-10-04 | Elpida Memory Inc | 半導体装置 |
US11621035B1 (en) * | 2021-09-16 | 2023-04-04 | Globalfoundries U.S. Inc. | Memory circuit structure with supply voltage transmitted via word line |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04302896A (ja) * | 1991-03-29 | 1992-10-26 | Toshiba Corp | ダイナミック型半導体記憶装置 |
JPH0684355A (ja) * | 1992-07-15 | 1994-03-25 | Kawasaki Steel Corp | 低電圧駆動半導体メモリ |
KR950009204B1 (ko) * | 1993-04-08 | 1995-08-16 | 삼성전자 주식회사 | 반도체 집적회로의 워드라인 드라이버회로 및 그 소오스전원 공급방법 |
KR0164377B1 (ko) * | 1995-07-15 | 1999-02-18 | 김광호 | 반도체 메모리장치의 서브워드라인 드라이버 |
JPH09134591A (ja) * | 1995-11-07 | 1997-05-20 | Oki Micro Design Miyazaki:Kk | 半導体メモリ装置 |
-
1997
- 1997-09-03 JP JP23847497A patent/JP3478953B2/ja not_active Expired - Fee Related
-
1998
- 1998-09-01 US US09/144,939 patent/US6002635A/en not_active Expired - Lifetime
- 1998-09-02 CN CNB981203493A patent/CN1267928C/zh not_active Expired - Fee Related
- 1998-09-02 KR KR1019980036114A patent/KR100343359B1/ko not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006313620A (ja) * | 2006-06-22 | 2006-11-16 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の駆動方法 |
CN103123803A (zh) * | 2008-08-21 | 2013-05-29 | 海力士半导体有限公司 | 半导体存储装置 |
CN103123803B (zh) * | 2008-08-21 | 2016-08-17 | 海力士半导体有限公司 | 半导体存储装置 |
CN105378844A (zh) * | 2013-03-21 | 2016-03-02 | 株式会社东芝 | 非易失性随机存取存储器 |
CN105378844B (zh) * | 2013-03-21 | 2017-12-08 | 株式会社东芝 | 非易失性随机存取存储器 |
US9997216B2 (en) | 2013-03-21 | 2018-06-12 | Toshiba Memory Corporation | Nonvolatile random access memory including control circuit configured to receive commands at high and low edges of one clock cycle |
CN113178216A (zh) * | 2021-05-28 | 2021-07-27 | 长鑫存储技术有限公司 | 半导体存储装置 |
CN113178216B (zh) * | 2021-05-28 | 2022-05-20 | 长鑫存储技术有限公司 | 半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH1186543A (ja) | 1999-03-30 |
JP3478953B2 (ja) | 2003-12-15 |
KR100343359B1 (ko) | 2002-10-25 |
KR19990029459A (ko) | 1999-04-26 |
CN1267928C (zh) | 2006-08-02 |
US6002635A (en) | 1999-12-14 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030328 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030328 Address after: Kawasaki, Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS KANSAI CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060802 Termination date: 20140902 |
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EXPY | Termination of patent right or utility model |