CN1200433C - 非易失存储器高速读出用基准单元 - Google Patents
非易失存储器高速读出用基准单元 Download PDFInfo
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- CN1200433C CN1200433C CNB018010490A CN01801049A CN1200433C CN 1200433 C CN1200433 C CN 1200433C CN B018010490 A CNB018010490 A CN B018010490A CN 01801049 A CN01801049 A CN 01801049A CN 1200433 C CN1200433 C CN 1200433C
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/602,108 | 2000-06-21 | ||
US09/602,108 US6411549B1 (en) | 2000-06-21 | 2000-06-21 | Reference cell for high speed sensing in non-volatile memories |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1366677A CN1366677A (zh) | 2002-08-28 |
CN1200433C true CN1200433C (zh) | 2005-05-04 |
Family
ID=24409999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018010490A Expired - Fee Related CN1200433C (zh) | 2000-06-21 | 2001-05-14 | 非易失存储器高速读出用基准单元 |
Country Status (13)
Country | Link |
---|---|
US (1) | US6411549B1 (zh) |
EP (1) | EP1297535B1 (zh) |
JP (1) | JP2003536200A (zh) |
KR (1) | KR20030009285A (zh) |
CN (1) | CN1200433C (zh) |
AU (1) | AU2001261842A1 (zh) |
CA (1) | CA2391331A1 (zh) |
DE (1) | DE60132088T2 (zh) |
HK (1) | HK1046983B (zh) |
MY (1) | MY134250A (zh) |
NO (1) | NO20020847D0 (zh) |
TW (1) | TW512353B (zh) |
WO (1) | WO2001099114A1 (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6922820B1 (en) * | 2000-10-12 | 2005-07-26 | Cypress Semiconductor Corp. | Circuit for generating silicon ID for PLDS |
JP4663094B2 (ja) * | 2000-10-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6587378B2 (en) * | 2000-12-13 | 2003-07-01 | Texas Instruments Incorporated | Apparatus and method for refreshing a flash memory unit |
US6697283B2 (en) * | 2001-01-03 | 2004-02-24 | Micron Technology, Inc. | Temperature and voltage compensated reference current generator |
US6940772B1 (en) | 2002-03-18 | 2005-09-06 | T-Ram, Inc | Reference cells for TCCT based memory cells |
US6799256B2 (en) * | 2002-04-12 | 2004-09-28 | Advanced Micro Devices, Inc. | System and method for multi-bit flash reads using dual dynamic references |
US6687162B1 (en) * | 2002-04-19 | 2004-02-03 | Winbond Electronics Corporation | Dual reference cell for split-gate nonvolatile semiconductor memory |
US6768677B2 (en) * | 2002-11-22 | 2004-07-27 | Advanced Micro Devices, Inc. | Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage |
JP2004342276A (ja) * | 2003-05-19 | 2004-12-02 | Sharp Corp | 半導体記憶装置およびそのプログラム方法 |
JP4286085B2 (ja) * | 2003-07-28 | 2009-06-24 | Okiセミコンダクタ株式会社 | 増幅器及びそれを用いた半導体記憶装置 |
US6970037B2 (en) * | 2003-09-05 | 2005-11-29 | Catalyst Semiconductor, Inc. | Programmable analog bias circuits using floating gate CMOS technology |
WO2005073982A1 (en) * | 2004-01-28 | 2005-08-11 | Koninklijke Philips Electronics N.V. | Integrated circuit device with a rom matrix |
US7149123B2 (en) * | 2004-04-06 | 2006-12-12 | Catalyst Semiconductor, Inc. | Non-volatile CMOS reference circuit |
US6967871B1 (en) | 2004-05-19 | 2005-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reference sensing circuit |
US7142456B2 (en) * | 2004-10-08 | 2006-11-28 | Lexmark International | Distributed programmed memory cells used as memory reference currents |
JP4522217B2 (ja) * | 2004-10-15 | 2010-08-11 | パナソニック株式会社 | 不揮発性半導体メモリ |
US7312641B2 (en) * | 2004-12-28 | 2007-12-25 | Spansion Llc | Sense amplifiers with high voltage swing |
ITMI20051075A1 (it) * | 2005-06-10 | 2006-12-11 | Atmel Corp | "sistema e metodo per eguagliare la resistenza in una memoria non volatile" |
JP2007087441A (ja) * | 2005-09-20 | 2007-04-05 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
US7558907B2 (en) * | 2006-10-13 | 2009-07-07 | Spansion Llc | Virtual memory card controller |
KR100837282B1 (ko) * | 2007-06-14 | 2008-06-12 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템,그것의 프로그램 방법 및 읽기 방법 |
TWI399754B (zh) * | 2008-03-17 | 2013-06-21 | Elpida Memory Inc | 具有單端感測放大器之半導體裝置 |
US7813201B2 (en) * | 2008-07-08 | 2010-10-12 | Atmel Corporation | Differential sense amplifier |
US7796437B2 (en) * | 2008-09-23 | 2010-09-14 | Sandisk 3D Llc | Voltage regulator with reduced sensitivity of output voltage to change in load current |
US7995387B2 (en) * | 2009-01-30 | 2011-08-09 | Sandisk Il Ltd. | System and method to read data subject to a disturb condition |
US8374026B2 (en) * | 2009-01-30 | 2013-02-12 | Sandisk Il Ltd. | System and method of reading data using a reliability measure |
US7856528B1 (en) | 2009-08-11 | 2010-12-21 | Texas Memory Systems, Inc. | Method and apparatus for protecting data using variable size page stripes in a FLASH-based storage system |
US7818525B1 (en) | 2009-08-12 | 2010-10-19 | Texas Memory Systems, Inc. | Efficient reduction of read disturb errors in NAND FLASH memory |
US8189379B2 (en) | 2009-08-12 | 2012-05-29 | Texas Memory Systems, Inc. | Reduction of read disturb errors in NAND FLASH memory |
KR101094904B1 (ko) * | 2009-09-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 기준전압 생성 회로 및 방법, 이를 이용한 상변화 메모리 장치 및 리드 방법 |
CN102110475B (zh) * | 2011-01-27 | 2013-09-04 | 深圳市国微电子有限公司 | 一种存储器的读出电路及其从存储器中读出数据的方法 |
CN103377687B (zh) * | 2012-04-27 | 2017-04-05 | 上海复旦微电子集团股份有限公司 | 读出放大电路及存储器 |
CN103377708B (zh) * | 2012-04-27 | 2016-08-03 | 上海复旦微电子集团股份有限公司 | 用于非易失性存储器的读出放大电路及存储器 |
CN104464803B (zh) * | 2013-09-18 | 2018-07-20 | 北京兆易创新科技股份有限公司 | 一种读电压的产生装置、闪存存储系统 |
US9786348B1 (en) * | 2016-04-11 | 2017-10-10 | Micron Technology, Inc. | Dynamic adjustment of memory cell digit line capacitance |
KR102319710B1 (ko) * | 2016-11-21 | 2021-10-29 | 매그나칩 반도체 유한회사 | 센스 앰프 구동 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2089612B (en) * | 1980-12-12 | 1984-08-30 | Tokyo Shibaura Electric Co | Nonvolatile semiconductor memory device |
IT1228822B (it) * | 1989-03-23 | 1991-07-04 | Sgs Thomson Microelectronics | Cella di riferimento per la lettura di dispositivi di memoria eeprom. |
EP0424172B1 (en) | 1989-10-20 | 1995-01-18 | Fujitsu Limited | Nonvolatile semiconductor memory apparatus |
JP2853217B2 (ja) * | 1989-11-21 | 1999-02-03 | 日本電気株式会社 | 半導体メモリ |
US5608676A (en) | 1993-08-31 | 1997-03-04 | Crystal Semiconductor Corporation | Current limited current reference for non-volatile memory sensing |
DE69621323T2 (de) * | 1995-02-10 | 2002-09-05 | Micron Technology, Inc. | Schneller leseverstärker für einen flash-speicher |
JP3132637B2 (ja) * | 1995-06-29 | 2001-02-05 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5572474A (en) | 1995-07-18 | 1996-11-05 | Cypress Semiconductor Corporation | Pseudo-differential sense amplifier |
US5790453A (en) | 1996-10-24 | 1998-08-04 | Micron Quantum Devices, Inc. | Apparatus and method for reading state of multistate non-volatile memory cells |
JP3039458B2 (ja) * | 1997-07-07 | 2000-05-08 | 日本電気株式会社 | 不揮発性半導体メモリ |
US5859796A (en) * | 1997-12-16 | 1999-01-12 | Advanced Micro Devices, Inc. | Programming of memory cells using connected floating gate analog reference cell |
JP3237610B2 (ja) * | 1998-05-19 | 2001-12-10 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
-
2000
- 2000-06-21 US US09/602,108 patent/US6411549B1/en not_active Expired - Fee Related
-
2001
- 2001-05-14 KR KR1020027002144A patent/KR20030009285A/ko not_active Application Discontinuation
- 2001-05-14 CN CNB018010490A patent/CN1200433C/zh not_active Expired - Fee Related
- 2001-05-14 AU AU2001261842A patent/AU2001261842A1/en not_active Abandoned
- 2001-05-14 EP EP01935781A patent/EP1297535B1/en not_active Expired - Lifetime
- 2001-05-14 DE DE60132088T patent/DE60132088T2/de not_active Expired - Fee Related
- 2001-05-14 CA CA002391331A patent/CA2391331A1/en not_active Abandoned
- 2001-05-14 JP JP2002503874A patent/JP2003536200A/ja not_active Withdrawn
- 2001-05-14 WO PCT/US2001/040736 patent/WO2001099114A1/en active IP Right Grant
- 2001-06-11 MY MYPI20012718 patent/MY134250A/en unknown
- 2001-06-18 TW TW090114695A patent/TW512353B/zh not_active IP Right Cessation
-
2002
- 2002-02-21 NO NO20020847A patent/NO20020847D0/no not_active Application Discontinuation
- 2002-11-12 HK HK02108172.1A patent/HK1046983B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2391331A1 (en) | 2001-12-27 |
EP1297535A1 (en) | 2003-04-02 |
EP1297535B1 (en) | 2007-12-26 |
KR20030009285A (ko) | 2003-01-29 |
NO20020847L (no) | 2002-02-21 |
JP2003536200A (ja) | 2003-12-02 |
US6411549B1 (en) | 2002-06-25 |
HK1046983A1 (en) | 2003-01-30 |
HK1046983B (zh) | 2005-08-12 |
CN1366677A (zh) | 2002-08-28 |
NO20020847D0 (no) | 2002-02-21 |
DE60132088D1 (de) | 2008-02-07 |
TW512353B (en) | 2002-12-01 |
AU2001261842A1 (en) | 2002-01-02 |
WO2001099114A1 (en) | 2001-12-27 |
MY134250A (en) | 2007-11-30 |
DE60132088T2 (de) | 2008-12-11 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: American California Patentee after: Atmel Corp. Address before: American California Patentee before: Atmel Corporation |
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ASS | Succession or assignment of patent right |
Owner name: YATEMIS MERGER + ACQUISITIONS CO., LTD. Free format text: FORMER OWNER: ATMEL CORP. Effective date: 20130417 |
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Effective date of registration: 20130417 Address after: American California Patentee after: ARTEMIS ACQUISITION LLC Address before: American California Patentee before: Atmel Corp. |
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Granted publication date: 20050504 Termination date: 20140514 |