ITMI20051075A1 - "sistema e metodo per eguagliare la resistenza in una memoria non volatile" - Google Patents

"sistema e metodo per eguagliare la resistenza in una memoria non volatile"

Info

Publication number
ITMI20051075A1
ITMI20051075A1 IT001075A ITMI20051075A ITMI20051075A1 IT MI20051075 A1 ITMI20051075 A1 IT MI20051075A1 IT 001075 A IT001075 A IT 001075A IT MI20051075 A ITMI20051075 A IT MI20051075A IT MI20051075 A1 ITMI20051075 A1 IT MI20051075A1
Authority
IT
Italy
Prior art keywords
compare
resistance
volatile memory
volatile
memory
Prior art date
Application number
IT001075A
Other languages
English (en)
Inventor
Simone Bartoli
Lorenzo Bedarida
Giorgio Oddone
Andrea Sacco
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to IT001075A priority Critical patent/ITMI20051075A1/it
Priority to US11/193,924 priority patent/US7283396B2/en
Priority to PCT/US2006/022220 priority patent/WO2006135658A2/en
Priority to TW095120908A priority patent/TW200705448A/zh
Publication of ITMI20051075A1 publication Critical patent/ITMI20051075A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
IT001075A 2005-06-10 2005-06-10 "sistema e metodo per eguagliare la resistenza in una memoria non volatile" ITMI20051075A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT001075A ITMI20051075A1 (it) 2005-06-10 2005-06-10 "sistema e metodo per eguagliare la resistenza in una memoria non volatile"
US11/193,924 US7283396B2 (en) 2005-06-10 2005-07-28 System and method for matching resistance in a non-volatile memory
PCT/US2006/022220 WO2006135658A2 (en) 2005-06-10 2006-06-07 System and method for matching resistance in a non-volatile memory
TW095120908A TW200705448A (en) 2005-06-10 2006-06-09 System and method for matching resistance in a non-volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001075A ITMI20051075A1 (it) 2005-06-10 2005-06-10 "sistema e metodo per eguagliare la resistenza in una memoria non volatile"

Publications (1)

Publication Number Publication Date
ITMI20051075A1 true ITMI20051075A1 (it) 2006-12-11

Family

ID=37523955

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001075A ITMI20051075A1 (it) 2005-06-10 2005-06-10 "sistema e metodo per eguagliare la resistenza in una memoria non volatile"

Country Status (3)

Country Link
US (1) US7283396B2 (it)
IT (1) ITMI20051075A1 (it)
TW (1) TW200705448A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414891B2 (en) 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US8351289B1 (en) 2009-12-30 2013-01-08 Micron Technology, Inc. Apparatuses and methods for sensing a phase-change test cell and determining changes to the test cell resistance due to thermal exposure
US10262751B2 (en) * 2016-09-29 2019-04-16 Intel Corporation Multi-dimensional optimization of electrical parameters for memory training

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3580349D1 (de) * 1984-12-18 1990-12-06 Matsushita Electric Ind Co Ltd Heizgeraet mit waermespeicheranordnung.
CN1147866C (zh) 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路
US5774395A (en) 1996-11-27 1998-06-30 Advanced Micro Devices, Inc. Electrically erasable reference cell for accurately determining threshold voltage of a non-volatile memory at a plurality of threshold voltage levels
US5717632A (en) 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
US6411549B1 (en) 2000-06-21 2002-06-25 Atmel Corporation Reference cell for high speed sensing in non-volatile memories
ITMI20011231A1 (it) 2001-06-12 2002-12-12 St Microelectronics Srl Circuiteria di rilevamento per la lettura e la verifica del contenutodi celle di memoria non volatili programmabili e cancellabili elettric
JP3968274B2 (ja) * 2002-07-08 2007-08-29 富士通株式会社 半導体記憶装置
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW200705448A (en) 2007-02-01
US7283396B2 (en) 2007-10-16
US20060279988A1 (en) 2006-12-14

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