DE602005021192D1 - Vorbespielte flüchtige Speicherzelle - Google Patents
Vorbespielte flüchtige SpeicherzelleInfo
- Publication number
- DE602005021192D1 DE602005021192D1 DE602005021192T DE602005021192T DE602005021192D1 DE 602005021192 D1 DE602005021192 D1 DE 602005021192D1 DE 602005021192 T DE602005021192 T DE 602005021192T DE 602005021192 T DE602005021192 T DE 602005021192T DE 602005021192 D1 DE602005021192 D1 DE 602005021192D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- volatile memory
- recorded
- recorded volatile
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0411360A FR2877143A1 (fr) | 2004-10-25 | 2004-10-25 | Cellule de memoire volatile preenregistree |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602005021192D1 true DE602005021192D1 (de) | 2010-06-24 |
Family
ID=34952238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602005021192T Active DE602005021192D1 (de) | 2004-10-25 | 2005-10-12 | Vorbespielte flüchtige Speicherzelle |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7289355B2 (de) |
| EP (1) | EP1650806B1 (de) |
| DE (1) | DE602005021192D1 (de) |
| FR (1) | FR2877143A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BRPI0414551B8 (pt) * | 2003-10-10 | 2021-05-25 | Antares Pharma Ipl Ag | formulação farmacêutica transdérmica ou transmucosa e método de protelação ou inibição da cristalização de um agente ativo |
| US8690065B2 (en) | 2007-08-15 | 2014-04-08 | Nxp B.V. | Secure storage of a codeword within an integrated circuit |
| TW201023341A (en) * | 2008-12-12 | 2010-06-16 | Ind Tech Res Inst | Integrated circuit structure |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4821233A (en) * | 1985-09-19 | 1989-04-11 | Xilinx, Incorporated | 5-transistor memory cell with known state on power-up |
| JPS6381974A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2550207B2 (ja) * | 1990-06-08 | 1996-11-06 | 株式会社東芝 | 半導体メモリセル |
| US5239510A (en) * | 1991-11-25 | 1993-08-24 | At&T Bell Laboratories | Multiple voltage supplies for field programmable gate arrays and the like |
| JP3637299B2 (ja) * | 2001-10-05 | 2005-04-13 | 松下電器産業株式会社 | 半導体記憶装置 |
| US20030218218A1 (en) * | 2002-05-21 | 2003-11-27 | Samir Chaudhry | SRAM cell with reduced standby leakage current and method for forming the same |
| JP4162076B2 (ja) * | 2002-05-30 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| FR2849260B1 (fr) | 2002-12-23 | 2005-03-11 | St Microelectronics Sa | Cellule de memoire sram non volatile. |
-
2004
- 2004-10-25 FR FR0411360A patent/FR2877143A1/fr active Pending
-
2005
- 2005-10-12 EP EP05292134A patent/EP1650806B1/de not_active Expired - Fee Related
- 2005-10-12 DE DE602005021192T patent/DE602005021192D1/de active Active
- 2005-10-25 US US11/261,396 patent/US7289355B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1650806B1 (de) | 2010-05-12 |
| US20060139990A1 (en) | 2006-06-29 |
| FR2877143A1 (fr) | 2006-04-28 |
| EP1650806A1 (de) | 2006-04-26 |
| US7289355B2 (en) | 2007-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |