TWI315878B - Method and device for power-saving multi-pass sensing in non-volatile memory - Google Patents

Method and device for power-saving multi-pass sensing in non-volatile memory

Info

Publication number
TWI315878B
TWI315878B TW95149909A TW95149909A TWI315878B TW I315878 B TWI315878 B TW I315878B TW 95149909 A TW95149909 A TW 95149909A TW 95149909 A TW95149909 A TW 95149909A TW I315878 B TWI315878 B TW I315878B
Authority
TW
Taiwan
Prior art keywords
power
volatile memory
saving multi
pass sensing
sensing
Prior art date
Application number
TW95149909A
Other languages
Chinese (zh)
Other versions
TW200741736A (en
Inventor
Shou-Chang Tsao
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/323,569 external-priority patent/US7733704B2/en
Priority claimed from US11/322,427 external-priority patent/US7447094B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200741736A publication Critical patent/TW200741736A/en
Application granted granted Critical
Publication of TWI315878B publication Critical patent/TWI315878B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
TW95149909A 2005-12-29 2006-12-29 Method and device for power-saving multi-pass sensing in non-volatile memory TWI315878B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/323,569 US7733704B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with power-saving multi-pass sensing
US11/322,427 US7447094B2 (en) 2005-12-29 2005-12-29 Method for power-saving multi-pass sensing in non-volatile memory

Publications (2)

Publication Number Publication Date
TW200741736A TW200741736A (en) 2007-11-01
TWI315878B true TWI315878B (en) 2009-10-11

Family

ID=38191878

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95149909A TWI315878B (en) 2005-12-29 2006-12-29 Method and device for power-saving multi-pass sensing in non-volatile memory

Country Status (3)

Country Link
EP (1) EP1966803A2 (en)
TW (1) TWI315878B (en)
WO (1) WO2007076503A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425516B (en) * 2009-05-08 2014-02-01 Macronix Int Co Ltd Memory apparatus and method for operating the same
US8659963B2 (en) 2012-01-05 2014-02-25 International Business Machines Corporation Enhanced power savings for memory arrays

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56143592A (en) * 1980-04-09 1981-11-09 Toshiba Corp Semiconductor memory device
KR900004635B1 (en) * 1987-06-27 1990-06-30 삼성반도체통신 주식회사 Charging and equalizing circuit for semiconductor memory device
TW419669B (en) * 1998-03-16 2001-01-21 Nippon Electric Co Semiconductor memory device
EP1543529B1 (en) * 2002-09-24 2009-11-04 SanDisk Corporation Non-volatile memory and its sensing method
US6977842B2 (en) * 2003-09-16 2005-12-20 Micron Technology, Inc. Boosted substrate/tub programming for flash memories
JP4287235B2 (en) * 2003-10-09 2009-07-01 株式会社東芝 Nonvolatile semiconductor memory device
US7177212B2 (en) * 2004-01-23 2007-02-13 Agere Systems Inc. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase

Also Published As

Publication number Publication date
WO2007076503A2 (en) 2007-07-05
TW200741736A (en) 2007-11-01
WO2007076503A3 (en) 2007-11-15
EP1966803A2 (en) 2008-09-10

Similar Documents

Publication Publication Date Title
GB2432444B (en) Flash memory device and word line enable method thereof
EP1883931A4 (en) Predictive methods and apparatus for non-volatile memory
IL226581A0 (en) Systems and methods for use in flash detection
GB2432378B (en) System and method for sensing parameters in a wellbore
EP2095241A4 (en) Securing a flash memory block in a secure device system and method
EP1729220A4 (en) Cache memory and control method thereof
TWI366893B (en) Non-volatile memory device and method for manufacturing the same
TWI367486B (en) Memory device and refresh method thereof
EP1846954A4 (en) Structure and method for biasing phase change memory array for reliable writing
GB2427721B (en) System and method for communicating with memory devices
EP2084848A4 (en) Method for programming on-chip non-volatile memory in a secure processor, and a device so programmed
EP2071468A4 (en) Memory control device, memory device, and memory control method
TWI348701B (en) Semiconductor memory and method for testing the same
TWI346955B (en) Non-volatile memory device and method of programming a multi level cell in the same
EP1764799A4 (en) Reading device, program, and reading method
GB0525676D0 (en) Roll storage module and method for its operation
EP2187315A4 (en) Method for accessing data in flash memory and data accessing controller
TWI367497B (en) Semiconductor memory apparatus and its operation method
EP2024840A4 (en) Method and arrangement for processing transactions in a flash type memory device
EP2047367A4 (en) Memory system and memory chip
TWI319193B (en) Method and apparatus to control sensing time for nonvolatile memory
GB2437217B (en) Vertical memory device and method
EP1962181A4 (en) Buffer control device and buffer memory
GB2456984B (en) Memory seismic device and method
GB0910535D0 (en) Sensing device for floating body cell memory and method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees