JPS56143592A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56143592A
JPS56143592A JP4652480A JP4652480A JPS56143592A JP S56143592 A JPS56143592 A JP S56143592A JP 4652480 A JP4652480 A JP 4652480A JP 4652480 A JP4652480 A JP 4652480A JP S56143592 A JPS56143592 A JP S56143592A
Authority
JP
Japan
Prior art keywords
word line
line
read
level
held
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4652480A
Other languages
Japanese (ja)
Other versions
JPS6145314B2 (en
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4652480A priority Critical patent/JPS56143592A/en
Publication of JPS56143592A publication Critical patent/JPS56143592A/en
Publication of JPS6145314B2 publication Critical patent/JPS6145314B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To enable high-speed access by selecting the word line that corresponds to an address being read-out next, during a precharge period. CONSTITUTION:For example, clock signal phi drops to level zero, precharge operation starts to set both bit lines BL and -BL at power source voltage VDD, and an address signal is changed from line (i) to line (j). While word line WLi is held at level zero, word line WLj is selected and increased to level 1 irrespective of the precharge period. Therefore, the bit line potential does not reach VDD completely and is held at an intermediate level corresponding to the data in a memory cell whose word line is selected. Next, when clock phi changes from 0 to 1 and gets active, the bit line potential is read-out at a high speed because the data is half read.
JP4652480A 1980-04-09 1980-04-09 Semiconductor memory device Granted JPS56143592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4652480A JPS56143592A (en) 1980-04-09 1980-04-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4652480A JPS56143592A (en) 1980-04-09 1980-04-09 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56143592A true JPS56143592A (en) 1981-11-09
JPS6145314B2 JPS6145314B2 (en) 1986-10-07

Family

ID=12749658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4652480A Granted JPS56143592A (en) 1980-04-09 1980-04-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56143592A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04265816A (en) * 1990-10-29 1992-09-22 Hughes Aircraft Co Integrated optical gysroscope sensor
JPH08297978A (en) * 1995-04-24 1996-11-12 Nec Corp Semiconductor memory
WO2007076503A2 (en) * 2005-12-29 2007-07-05 Sandisk Corporation Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation
US7447094B2 (en) 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7733704B2 (en) 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04265816A (en) * 1990-10-29 1992-09-22 Hughes Aircraft Co Integrated optical gysroscope sensor
JPH08297978A (en) * 1995-04-24 1996-11-12 Nec Corp Semiconductor memory
WO2007076503A2 (en) * 2005-12-29 2007-07-05 Sandisk Corporation Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation
WO2007076503A3 (en) * 2005-12-29 2007-11-15 Sandisk Corp Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation
US7447094B2 (en) 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7733704B2 (en) 2005-12-29 2010-06-08 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US7965560B2 (en) 2005-12-29 2011-06-21 Sandisk Corporation Non-volatile memory with power-saving multi-pass sensing
US8159876B2 (en) 2005-12-29 2012-04-17 SanDisk Technologies, Inc. Non-volatile memory and method for power-saving multi-pass sensing
US8300459B2 (en) 2005-12-29 2012-10-30 Sandisk Technologies Inc. Non-volatile memory and method for power-saving multi-pass sensing

Also Published As

Publication number Publication date
JPS6145314B2 (en) 1986-10-07

Similar Documents

Publication Publication Date Title
US5241503A (en) Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
EP0195445A3 (en) Semiconductor memory device with an error correction function
EP0145488A2 (en) Semiconductor memory device
KR900015154A (en) Di-RAM integrated semiconductor memory and its test method
JPS6452282A (en) Precharging circuit of semiconductor memory device
US4360903A (en) Clocking system for a self-refreshed dynamic memory
KR100282972B1 (en) Gain memory cell with diode
KR860001935B1 (en) Dual port type semiconductor memory
EP1924999A1 (en) Storage element with clear operation and method thereof
JPS54139343A (en) Clock-system memory
JPH05298876A (en) Serial storage device
US4198697A (en) Multiple dummy cell layout for MOS random access memory
JPS56156993A (en) Read only memory
JPS5785255A (en) Memory storage for integrated circuit
JPS56143592A (en) Semiconductor memory device
CA1160742A (en) Static ram memory cell
MY103962A (en) Multiport memory
JPS54107228A (en) Memory circuit
JPS55101185A (en) Semiconductor memory device
JPS56107387A (en) Semiconductor storage device
JPS57208686A (en) Semiconductor storage device
JPS57130285A (en) Static semiconductor memory
JPS5778695A (en) Semiconductor storage device
JPS57130291A (en) Semiconductor nonvolatile read-only storage device
JPS5771579A (en) Semiconductor memory device