CN1162914C - 多端口静态随机存取存储器 - Google Patents

多端口静态随机存取存储器 Download PDF

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Publication number
CN1162914C
CN1162914C CNB011224827A CN01122482A CN1162914C CN 1162914 C CN1162914 C CN 1162914C CN B011224827 A CNB011224827 A CN B011224827A CN 01122482 A CN01122482 A CN 01122482A CN 1162914 C CN1162914 C CN 1162914C
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CN
China
Prior art keywords
mentioned
write
bit line
line
word line
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Expired - Fee Related
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CNB011224827A
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English (en)
Chinese (zh)
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CN1341941A (zh
Inventor
国清辰也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1341941A publication Critical patent/CN1341941A/zh
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Publication of CN1162914C publication Critical patent/CN1162914C/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
CNB011224827A 2000-07-10 2001-07-10 多端口静态随机存取存储器 Expired - Fee Related CN1162914C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP207848/2000 2000-07-10
JP207848/00 2000-07-10
JP2000207848 2000-07-10
JP148893/01 2001-05-18
JP148893/2001 2001-05-18
JP2001148893A JP4748877B2 (ja) 2000-07-10 2001-05-18 記憶装置

Publications (2)

Publication Number Publication Date
CN1341941A CN1341941A (zh) 2002-03-27
CN1162914C true CN1162914C (zh) 2004-08-18

Family

ID=26595666

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011224827A Expired - Fee Related CN1162914C (zh) 2000-07-10 2001-07-10 多端口静态随机存取存储器

Country Status (4)

Country Link
JP (1) JP4748877B2 (enExample)
CN (1) CN1162914C (enExample)
DE (1) DE10133281A1 (enExample)
TW (1) TW523742B (enExample)

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* Cited by examiner, † Cited by third party
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DE102004041331B4 (de) * 2004-08-26 2007-05-10 Infineon Technologies Ag Codesender, insbesondere zur Verwendung in einem Speichercontroller
JP2006236443A (ja) * 2005-02-23 2006-09-07 Seiko Epson Corp 強誘電体メモリ装置
JP2007172813A (ja) * 2005-11-25 2007-07-05 Semiconductor Energy Lab Co Ltd 半導体記憶装置及び半導体記憶装置の動作方法
JP4877094B2 (ja) * 2007-06-22 2012-02-15 日本テキサス・インスツルメンツ株式会社 半導体装置、半導体メモリ装置及び半導体メモリセル
JP5282430B2 (ja) * 2008-03-27 2013-09-04 富士通株式会社 半導体記憶装置
KR100953055B1 (ko) * 2008-05-20 2010-04-15 주식회사 하이닉스반도체 불휘발성 메모리 소자의 동작 방법
US7859919B2 (en) * 2008-08-27 2010-12-28 Freescale Semiconductor, Inc. Memory device and method thereof
US8111542B2 (en) * 2008-11-19 2012-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. 8T low leakage SRAM cell
TWI410971B (zh) * 2009-12-01 2013-10-01 Faraday Tech Corp 靜態隨機存取記憶體
US8456945B2 (en) * 2010-04-23 2013-06-04 Advanced Micro Devices, Inc. 10T SRAM for graphics processing
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
GB2508221B (en) 2012-11-26 2015-02-25 Surecore Ltd Low-Power SRAM Cells
GB2510828B (en) * 2013-02-13 2015-06-03 Surecore Ltd Single wordline low-power SRAM cells
US11227653B1 (en) 2016-12-06 2022-01-18 Gsi Technology, Inc. Storage array circuits and methods for computational memory cells
US10770133B1 (en) 2016-12-06 2020-09-08 Gsi Technology, Inc. Read and write data processing circuits and methods associated with computational memory cells that provides write inhibits and read bit line pre-charge inhibits
US10847213B1 (en) 2016-12-06 2020-11-24 Gsi Technology, Inc. Write data processing circuits and methods associated with computational memory cells
US10854284B1 (en) 2016-12-06 2020-12-01 Gsi Technology, Inc. Computational memory cell and processing array device with ratioless write port
US10847212B1 (en) 2016-12-06 2020-11-24 Gsi Technology, Inc. Read and write data processing circuits and methods associated with computational memory cells using two read multiplexers
US10249362B2 (en) 2016-12-06 2019-04-02 Gsi Technology, Inc. Computational memory cell and processing array device using the memory cells for XOR and XNOR computations
US10891076B1 (en) 2016-12-06 2021-01-12 Gsi Technology, Inc. Results processing circuits and methods associated with computational memory cells
US10521229B2 (en) * 2016-12-06 2019-12-31 Gsi Technology, Inc. Computational memory cell and processing array device using memory cells
US10860320B1 (en) 2016-12-06 2020-12-08 Gsi Technology, Inc. Orthogonal data transposition system and method during data transfers to/from a processing array
US10777262B1 (en) 2016-12-06 2020-09-15 Gsi Technology, Inc. Read data processing circuits and methods associated memory cells
US10943648B1 (en) 2016-12-06 2021-03-09 Gsi Technology, Inc. Ultra low VDD memory cell with ratioless write port
US10958272B2 (en) 2019-06-18 2021-03-23 Gsi Technology, Inc. Computational memory cell and processing array device using complementary exclusive or memory cells
US10930341B1 (en) 2019-06-18 2021-02-23 Gsi Technology, Inc. Processing array device that performs one cycle full adder operation and bit line read/write logic features
US10877731B1 (en) 2019-06-18 2020-12-29 Gsi Technology, Inc. Processing array device that performs one cycle full adder operation and bit line read/write logic features

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS563838Y2 (enExample) * 1974-09-19 1981-01-28
JPS5464433A (en) * 1977-10-31 1979-05-24 Nec Corp Memory cell
JPS608553A (ja) * 1983-06-27 1985-01-17 Isuzu Motors Ltd 自動クラツチの制御方法
JPH0734311B2 (ja) * 1986-01-21 1995-04-12 株式会社東芝 メモリセル
JP2743526B2 (ja) * 1989-10-23 1998-04-22 日本電気株式会社 レジスタ回路
JPH04298887A (ja) * 1991-03-26 1992-10-22 Nippon Telegr & Teleph Corp <Ntt> メモリ回路
JPH04372793A (ja) * 1991-06-21 1992-12-25 Nippon Telegr & Teleph Corp <Ntt> メモリ回路
JPH10340584A (ja) * 1997-06-09 1998-12-22 Nec Corp 半導体記憶装置
JPH117775A (ja) * 1997-06-17 1999-01-12 Sony Corp 半導体記憶装置
JP3104671B2 (ja) * 1998-03-09 2000-10-30 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
JP2002093176A (ja) 2002-03-29
DE10133281A1 (de) 2002-01-31
JP4748877B2 (ja) 2011-08-17
CN1341941A (zh) 2002-03-27
TW523742B (en) 2003-03-11

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Granted publication date: 20040818

Termination date: 20100710